ky, SGS-THOMSON JF incrozuectRoMes STD4N25 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE Vpss Rps(on) Ip STD4N25 250 V <1.1 4A TYPICAL Rogion) = 0.7 Q AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100C APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX -1) a SURFACE-MOUNTING DPAK (TO-252) IPAK DPAK POWER PACKAGE IN TAPE & REEL TO-251 TO-252 (SUFFIX "T4) (Suffix "-1) (Suffix 4 APPLICATIONS HIGH SPEED SWITCHING UNINTERRUPTIBLE POWER SUPPLY (UPS) MOTOR CONTROL, AUDIO AMPLIFIERS INTERNAL SCHEMATIC DIAGRAM INDUSTRIAL ACTUATORS D(TAB or 2) DC-DC & DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT = PARTICULARLY SUITABLE FOR B(1) ELECTRONIC FLUORESCENT LAMP BALLASTS 5(3) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit Vos Drain-source Voltage (Vas = 0) 250 Vv Voar /|Drain- gate Voltage (Res = 20 kQ) 250 Vv Ves Gate-source Voltage + 20 V Ip Drain Current (continuous) at T, = 25 C 4 A ID Drain Current (continuous) at Te = 100 C 2.5 A Ipm(*) |Drain Current (pulsed) 16 A Ptot Total Dissipation at T. = 25 C 50 W Derating Factor 0.4 wc Tstg Storage Temperature -65 to 150 ae Tj Max. Operating Junction Temperature 150 C () Pulse width limited by safe operating area December 1996 1/10STD4N25 THERMAL DATA Rthj-case |Thermal Resistance Junction-case Max 2.5 C/W Rihj-amb |Thermal Resistance Junction-ambient Max 100 C/W Rthesink |Thermal Resistance Case-sink Typ 1.5 C/W TI Maximum Lead Temperature For Soldering Purpose 275 C AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit lAR Avalanche Current, Repetitive or Not-Repetitive 4 A (pulse width limited by Tj max, 6 < 1%) Eas Single Pulse Avalanche Energy 20 mJ (starting Tj = 25 C, Ip = lar, Vop= 50 V) Ear Repetitive Avalanche Energy 5 mJ (pulse width limited by Tj max, 6 < 1%) IAR Avalanche Current, Repetitive or Not-Repetitive 2.5 A (T. = 100 C, pulse width limited by T; max, 5 < 1%) ELECTRICAL CHARACTERISTICS (Tease = 25 C unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. | Max. Unit Vipryoss |Drain-source Ip= 250A Vas=0 250 V Breakdown Voltage loss Zero Gate Voltage Vos = Max Rating 10 HA Drain Current (Vas = 0) |Vps = Max Rating x 0.8 Tc= 125C 100 HA lass Gate-body Leakage Ves =+20V +100 nA Current (Vos = 0) ON (*) Symbol Parameter Test Conditions Min. Typ. | Max. Unit Vasith) Gate Threshold Voltage |Vps= Ves Ip= 250uA 2 3 4 V Rps(on) |Static Drain-source On |Vas=10V ID=2A 0.7 1.1 Q Resistance ID(on) On State Drain Current |Vps > ID(on) xX Rp s(on)max 4 A Ves=10V DYNAMIC Symbol Parameter Test Conditions Min. Typ. | Max. Unit Qfs (*) Forward Vos > ID(on) xX Rp s(on)max IDD=2A 1 2.5 S$ Transconductance Ciss Input Capacitance Vos=25V f=1MHz Ves=0 500 700 pF Coss Output Capacitance 85 120 pF Crss Reverse Transfer 15 30 pF Capacitance 2/10 Sar SGS-THOMSON Tf MICROELECTRONICSSTD4N25 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. | Max. Unit ta(on) Turn-on Time Vpp=125V Ip=2A 30 45 ns tr Rise Time Re = 509 Vas = 10V 60 90 ns (see test circuit, figure 3) (di/dt)on |Turn-on Current Slope |Vpp=200 V Ip=4A 220 A/us Re = 509 Ves = 10 V (see test circuit, figure 5) Qg Total Gate Charge Vpp =200 V Ip=4A Vag=10V 20 30 nc Qgs Gate-Source Charge 6 nc Qad Gate-Drain Charge 6 nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. | Max. Unit tr(Voff) Off-voltage Rise Time |Vpp=200 V Ip=4A 35 50 ns tr Fall Time Ra=50Q Ves=10V 20 30 ns te Cross-over Time (see test circuit, figure 5) 60 90 ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. | Max. Unit Isp Source-drain Current 4 A Ispm(*) |Source-drain Current 16 A (pulsed) Vsp (#) |Forward On Voltage Isp =4A Ves=0 1.5 Vv ter Reverse Recovery Isp =4A_ di/dt = 100 A/us 160 ns Time Von =100 VT; = 150C Qrr Reverse Recovery (see test circuit, figure 5) 0.8 pc Charge IRRM Reverse Recovery 10 A Current (*) Pulsed: Pulse duration = 300 us, duty cycle 1.5% () Pulse width limited by safe operating area Safe Operating Area 1,(A 4 2 468 , 2 4 GB 42 10 Thermal Impedance GChaa5o 4 68 107? Vos (V) MICROELEST! Zin = k Rinee o= tp/T 0.01 thle SINGLE PULSE 10 107 10? 107" 4, (s) 3/10 & SGS-THOMSONSTD4N25 Derating Curve GC19640 Pia (W} 60 40 20 0 50 100 150 Trowel C) Transfer Characteristics GC51640 Ip CA) 0 2 4 6 8 Vos () Static Drain-source On Resistance Roston) (9) 1.2 1.0 0.8 0.6 0.4 0.2 1 2 3 4 5 6 Ip(A) ky 4/10 SGS-THOMSON BICROELECT Output Characteristics G6C51620 Ip(A) 10 0 5 10 15 20 25 Vps{) Transconductance G6C51570 Sts (S) 6 T,=-40% oO 1 #2 3 4 6 Ipfa) Gate Charge vs Gate-source Voltage GCSA960 Ves (V) 10 Vos =200V Ip =4A 0 5 10 15 20 Q,(nc) ROMICSSTD4N25 Capacitance Variations C(pF) 1000 800 600 400 200 0 10 20 30 40 50 Vos() Normalized On Resistance vs Temperature Rps{on) Gtsga970 (norm} 2.0 Ves=10V lp=2A 0.5 o -50 0 50 100 ~~ 1,(C} Turn-off Drain-source Voltage Slope Gc5a990 dv/dt (/ns} Von =200 12Ry Vigg =10V [p=4A K 8 N Pel PL 4 0 40 BO 120 Re (0) ky SGS-THOMSON BICROELECT Normalized Gate Threshold Voltage vs Temperature GC31590 Vestth) nerm 6.9 0.8 0.7 50 0 50 100 T, (%) Turn-on Current Slope dt /dt GC58940 (A/us) \ \ Vp =200 350 Vos =10 \ Ip=4a 300 \ 250 \ 200 150 he, 100 seas 50 o 40 BO 120 Ref a) Cross-over Time ocasocd tc (ns) Vp =200 120 v.=10V a oa Lan Ip =4A 80 LA | a" im 40 0 40 B80 120 Re (D) 5/10 ROMICSSTD4N25 Switching Safe Operating Area Ip (A) 20 16 12 0 50 100 150 200 Vos () Source-drain Diode Forward Characteristics GC51610 Vsp () 1.2 1.0 0.8 0.6 0.4 2 4 6 8 Igy (A) Fig. 1: Unclamped Inductive Load Test Circuits Accidental Overload Area Ip (A) 20 16 1? T,=150C g tp =20 us 0 50 100 150 200 Vos (V) Fig. 2: Unclamped Inductive Waveforms VieR)Dss Yo o 4 2200 3.3 o BF uF Vpp | a BD a Ld mz (3 = a Mi | | i K DUT. Py a_i scosoan 5005970 6/10 iar SGS-THOMSON vf MICROELECTRONICSSTD4N25 Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge Test Circuit Vp Ves JL r oH hh 4 2200 BF il D.U.T, 3.3 iF SCOnTee 12 Yop Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times D Go it 250 aL 1000 uF Yop scc6n16. A3P Gtemouactronics 7/10STD4N25 | TO-251 (IPAK) MECHANICAL DATA mm DIM. A Al A3 B B2 B3 B5 C2 A3 L2 D | L 0068771-E 8/10 A3P GtemouactronicsSTD4N25 | TO-251 (IPAK) MECHANICAL DATA DIM. mm A Al A3 B B2 B3 B5 C2 A3 L2 D L 0068771-E 9/10 (7 SGS-THOMSON vf MICROELECTRONICS