AMERICAN POWER DEVICES SIE D MM 0737135 OOOO04L 828 MAP) 7-1'-0F4 7 1N5518B- B american S18B-1NSS46 Standard tolerances are 5% Mur rare Power devices, inc. 20%, 10%, 2% and 1% are available 400 mW low noise nae . MECHANICAL silicon zener diodes CHARACTERISTICS FEATURES MAXIMUM RATINGS | Zener voltage 3.3 to 33 V - Junction Temperature -65C to + 200C Te * Low noise * Storage Temperature -65C to + 200C { f + Low zener impedance * DC Power Dissipation: 400mW @ T, = 50C MAX . Available in JAN, JANTX and JANTXV . Derate above 50C: 3.2mW/C DIA qualified to MIL-S-19500/437 + Forward Voltage @ 200 mA: 1.1 Volts max. mae MN in 1N5518B8 - 1N5532B versions *Hermetically sealed glass package | BGS? max Note 1 The JEDEC type numbers shown with no suffix are +20% with guaranteed limits for | only V,, !,and V,. A suffix are +10% with guaranteed limits for only V,, |, and V,. Units with 20180022 on olla $008 Mn guaranteed limits for all six parameters are indicated by a B suffix for +5% units, suffix C for 22% units and suffix D indicates +1% units | Note 2 Voltage measurement performed with the device junction in thermal equilibrium with ambient temperature at 25C. Note 3 The zener impedance is derived from the 60 Hz ac voltage, which results when an ac FIGURE 1 all dimensions In JNCH . mm current having an rms value equal to 10% of the DC zener current (lz) is superimposed on 1. Note 4 Reverse leakage currents are guaranteed and are measured at V,as shown. CASE: Hermetically sealed Note 5 The maximum current shown is based on the maximum voltage of a 5.0% type unit. glass package (DO-35) The actual |,,, for any device man not exceed the value of 400 mW divided by the actual V_of FINISH: Corrosion resistant. the device. Leads are tin plated. Note 6 4, is the maximum difference between V, at !,, and V, al, measured with the device THERMAL RESISTANCE: Junction in thermal equilibrium, 200 CW junction to lead at 0.375-inches trom body. POLARITY: Cathode banded. WEIGHT: 0.2 grams (typ). This series also offered in DO-7 package up to 12 V. Consult factory for availability. ELECTRICAL CHARACTERISTICS @ 25C B-C-0 Sutfix B-C-D Suffix Max Noise Density) Nomina! Max Zener impedance | Max Reverse Leakage Currant Maximum atlz 250A | Regulation | Low Zener Voltage Test B-C-D Suttix DC Zener Current Np Factor Vz JEOEC V2@lz7 | Current Zzr @ lzr In Va Vois tz (Figure 1) aVz . |Current] Type No. Volts lyr Ohms pAde Non & A- | B-C-D made Imicrovolu per Vols ign tNote 1) (Note 2) mAde {Notes 3) {Note 4) Suffix Suffix (Now 5) square root cyte) {Note 8) mAde 1NSS18B 3.3 20 26 so 0290 1.0 115 05 0.90 20 1NSS19B 3.6 20 3.0 090 1.0 105 05 0.90 2.0 1NSS20B 39 20 2 1.0 0.90 1.0 98 os 0.85 20 1NSS21B 43 20 16 3.0 1.0 1s 88 os 0.75 20 1NSS22B 47 10 2 2.0 18 20 81 0S 060 19 +NS5S23B 5.1 5.0 s 20 20 28 18 0S O65 0.25 1NSS24B 5.6 3.0 x 20 30 35 68 1.0 0.30 0.26 1NS5525B 6.2 1.0 1.0 4s 50 6 10 020 001 1NSS26B 68 1.0 x 10 5.5 6.2 56 1.0 010 0.01 1N5527B 75 1.0 z os 60 6.8 5) 2.0 005 001 1NSS2BB B.2 1.0 40 05 65 75 6 4.0 00s 001 1NSS29B 91 10 5 01 70 a2 42 40 005 001 tN5S30B 100 1.0 6 005 80 91 38 40 oro oor 1N5531B 11.0 1.0 80 005 20 99 35 50 020 oot 1NS5328 12.0 1.0 90 005 9.5 10.8 32 10 020 001 1N5533B 130 1.0 90 oo 10.5 14.7 29 18 020 oo. 1NS534B 40 10 100 ao 15 126 27 20 0.20 oo INS535B 180 10 100 oo 125 135 Pe] 20 020 oo 4NS536B8 160 16 100 oot 130 144 24 20 020 oo 1N55378 170 1.0 100 oot 140 15.3 22 20 020 oot 1NSS38B 180 10 100 001 150 162 2 20 020 out IN5530B 180 1.0 100 oor 160 17% 20 20 020 O01 INS5S40B 200 10 100 oo 170 180 19 20 020 Gol 1IN5S41B 22.0 10 100 oot 180 198 7 20 025 oo1 1N5542B 240 10 100 oot 200 | 216 16 20 030 001 1M5543B 250 19 100 001 210 | 224 1S 20 035 001 1NSS44B 280 10 100 oon 220 | 252 14 20 040 oot INSS45B 300 10 100 oo 240 270 13 20 O45 oor INS546B 3306 1.0 100 oo1 280 27 12 20 050 oa 69 bennet street. Ivnn. ma 01905-3067 tel.: 617 592-6090 fax: 617 592-0677AMERICAN POWER DEVICES SSE D MM 0737135 OOO0047 764 MAP) american 1N5518B-1N5546B - Standard tolerances are 5% Tin Power devices, inc. 20%, 10%, 2% and 1% are available Noise Density A zener diode produces noise when biased in the reverse mode. The most significant portion of the noise is caused MIMETER LOW AMPLIFIER by the zener breakdown and is referred to as microplasma + PaTeR 7] nue or white noise. The higher frequencies can be DC POWER west aenes Patou | vn ms eliminated by the use of a shunt capacitor. However the swt syetoin Lt] ete} lower frequencies can not be removed without a serious y degradation in zener performance. NOISE DENSITY (VOLTS PER SQUARE ROOT BANDWIDTH) = vera can 7B WHERE: BW = FILTER BANDWIDTH [Hal Noise density (ND) in microvolts-rms per square-root-hertz Vous = OUTPUT NOISE (VOLTS RMS) decreases as zener current increases. The measurement of ND can be made with a circuit as shown in Figure 2. Measurement is performed using a 1 KHz to 3 KHz frequency bandpass filter at a constant zener test current Figure 2 NOISE DENSITY MEASUREMENT CIRCUIT (I) at 25C ambient temperature. g oe MINIMUM MAXIMUM g 8 Ty * 25C 200 = 20 = = 100 5100 1.0 V BIAS a 3 sp = 80 = * 2 S 1 = 10 s E69 BL 10 1o 2.0 $0 10 Vz. ZENER VOLTAGE (VOLTS) 20 50 100 04 0s Ds 0? O8 09 10 12 Vg, FORWARD VOLTAGE (VOLTS) Figure 3 TYPICAL CAPACITANCE VS FORWARD VOLTAGE Figure 3 TYPICAL FORWARD CHARACTERISTCS S te L* LEAD LENGTH a Ss ~ 6 Pp. MAXIMUM POWER DISSIPATION (WATTS) 20 40 6600 BD 100 120 140 160 180 200 T,, LEAD TEMPERATURE (C) Figure 5 POWER DERATING 69 bennett street, lynn, ma 01905-3067 = tel.: 617 592-6090 fax: 617 592-0677