© Semiconductor Components Industries, LLC, 2012
October, 2012 − Rev. 2
1Publication Order Number:
NTTFS3A08P/D
NTTFS3A08PZ
Power MOSFET
−20 V, −15 A, Single P−Channel, m8FL
Features
•Ultra Low RDS(on) to Minimize Conduction Losses
•m8FL 3.3 x 3.3 x 0.8 mm for Space Saving and Excellent Thermal
Conduction
•ESD Protection Level of 5 kV per JESD22−A114
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
•Battery Switch
•High Side Load Switch
•Optimized for Power Management Applications for Portable
Products such as Media Tablets, Ultrabook PCs and Cellphones
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS −20 V
Gate−to−Source Voltage VGS ±8 V
Continuous Drain
Current RqJA (Note 1)
Steady
State
TA = 25°CID−15 A
TA = 85°C−11
Power Dissipation RqJA
(Note 1)
TA = 25°C PD2.3 W
Continuous Drain
Current RqJA ≤ 10 s
(Note 1)
TA = 25°CID−22 A
TA = 85°C−16
Power Dissipation
RqJA ≤ 10 s (Note 1)
TA = 25°C PD4.9 W
Continuous Drain
Current RqJA (Note 2)
TA = 25°CID−9A
TA = 85°C−7
Power Dissipation
RqJA (Note 2)
TA = 25°C PD0.84 W
Pulsed Drain Current TA = 25°C, tp = 10 msIDM −46 A
Operating Junction and Storage Temperature TJ,
Tstg
−55 to
+150
°C
ESD (HBM, JESD22−A114) VESD 5000 V
Source Current (Body Diode) IS−3 A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
ORDERING INFORMATION
http://onsemi.com
Device Package Shipping†
V(BR)DSS RDS(on) MAX ID MAX
−20 V
6.7 mW @ −4.5 V
−15 A
P−Channel MOSFET
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
9.0 mW @ −2.5 V
NTTFS3A08PZTAG WDFN8
(Pb−Free)
1500 / Tape &
Reel
(Note: Microdot may be in either location)
1
3A08 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G= Pb−Free Package
1
NTTFS3A08PZTWG WDFN8
(Pb−Free)
5000 / Tape &
Reel
3A08
AYWWG
G
D
D
D
D
S
S
S
G
D
G
S
NTTFS3A08PZ
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2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Ambient – Steady State (Note 3) RqJA 55 °C/W
Junction−to−Ambient – Steady State (Note 4) RqJA 148
Junction−to−Ambient – (t ≤ 10 s) (Note 3) RqJA 26
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size (40 mm2, 1 oz. Cu).
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA−20 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ6 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = −16 V TJ = 25°C−1mA
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±5 V ±5mA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = −250 mA−0.4 −1.0 V
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ3.3 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = −4.5 V ID = −12 A 4.9 6.7 mW
VGS = −2.5 V ID = −10 A 6.9 9.0
Forward Transconductance gFS VDS = −1.5 V, ID = −8 A 62 S
CHARGES AND CAPACITANCES
Input Capacitance Ciss
VGS = 0 V, f = 1.0 MHz, VDS = −10 V
5000 pF
Output Capacitance Coss 600
Reverse Transfer Capacitance Crss 540
Total Gate Charge QG(TOT)
VGS = −4.5 V, VDS = −10 V, ID = −8 A
56 nC
Threshold Gate Charge QG(TH) 2.0
Gate−to−Source Charge QGS 6.5
Gate−to−Drain Charge QGD 15.4
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time td(on)
VGS = −4.5 V, VDS = −10 V,
ID = −8 A, RG = 6.0 W
13 ns
Rise Time tr60
Turn−Off Delay Time td(off) 250
Fall Time tf170
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V,
IS = −3 A TJ = 25°C−0.65 −1.0 V
Reverse Recovery Time tRR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = −6 A
207 ns
Charge Time ta45
Discharge Time tb162
Reverse Recovery Charge QRR 234 nC
5. Pulse Test: pulse width = 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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3
TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
−VDS, DRAIN−TO−SOURCE VOLTAGE (V) −VGS, GATE−TO−SOURCE VOLTAGE (V)
2.01.51.00.50
0
10
20
30
40
50
60
2.52.01.51.00.50
0
10
20
30
40
50
60
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
−VGS, GATE VOLTAGE (V) −ID, DRAIN CURRENT (A)
4.03.53.0 4.52.52.01.51.0
0
0.01
0.03
0.04
0.05
0.07
0.08
0.10
403020100
0
0.005
0.010
0.015
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1251007550250−25−50
0.7
0.8
0.9
1.1
1.2
1.3
1.5
1.6
181612108642
100
1000
10,000
100,000
−ID, DRAIN CURRENT (A)
−ID, DRAIN CURRENT (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE (W)
−IDSS, LEAKAGE (nA)
VGS = −1.8 V
−2 V
−4.5 V to −2.5 V
VDS ≤ −10 V
TJ = 125°C
TJ = 25°C
TJ = −55°C
VGS = −1.8 V
TJ = 25°C
VGS = −2.5 V
VGS = −4.5 V
0.02
0.06
0.09
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
TJ = 25°C
ID = −12 A
150
1.0
1.4
VGS = −4.5 V
ID = −12.0 A
14 20
TJ = 125°C
TJ = 85°C
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4
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
−VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)
18141086420
0
800
1600
3200
4800
5600
6400
8000
6050403020100
0
1
2
3
4
5
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
RG, GATE RESISTANCE (W)−VSD, SOURCE−TO−DRAIN VOLTAGE (V)
100101
1
10
100
1000
0.90.8 1.00.70.60.50.40.3
0.1
1
10
Figure 11. Threshold Voltage Figure 12. Single Pulse Maximum Power
Dissipation
TJ, TEMPERATURE (°C) SINGLE PULSE TIME (s)
1251007550250−25−50
0.15
0.25
0.35
0.45
0.55
0.75
0.85
0.95
1.E+021.E−021.E−04
0
50
100
150
200
300
350
400
C, CAPACITANCE (pF)
−VGS, GATE−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
−IS, SOURCE CURRENT (A)
−VGS(th) (V)
POWER (W)
12 16 20
2400
4000
7200 VGS = 0 V
TJ = 25°C
f = 1 MHz
Ciss
Coss
Crss
0
4
2
6
14
18
8
10
12
16
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VDS = −10 V
ID = −8 A
TJ = 25°C
QT
VGS
QGS QGD
VDS
VGS = −4.5 V
VDD = −10 V
ID = −8 A
td(off)
tf
tr
td(on)
TJ = 125°C
TJ = 25°C
TJ = −55°C
0.65
150
ID = −250 mA
250
1.E+00
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5
TYPICAL CHARACTERISTICS
Figure 13. Maximum Rated Forward Biased
Safe Operating Area
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1001010.1
0.01
0.1
1
10
100
Figure 14. FET Thermal Response
t, TIME (s)
1E−06
0
10
20
30
40
50
60
−ID, DRAIN CURRENT (A)
R(t), EFFECTIVE TRANSIENT
THERMAL RESPONSE
1E−05 1E−04 1E−03 1E−02 1E−01 1E+00 1E+01 1E+02 1E+03
RqJA = 55°C/W
Single Pulse
Duty Cycle = 0.5
0.010.020.05
0.10
0.20
100 ms
1 ms
dc
10 ms
VGS = −8 V
Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
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6
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
M1.40 1.50
q0 −−−
_
1.60
12
_
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
1234
56
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1 q
D
E
B
A
0.20 C
0.20 C
2X
2X
DIM MIN NOM
MILLIMETERS
A0.70 0.75
A1 0.00 −−−
b0.23 0.30
c0.15 0.20
D
D1 2.95 3.05
D2 1.98 2.11
E
E1 2.95 3.05
E2 1.47 1.60
e0.65 BSC
G0.30 0.41
K0.65 0.80
L0.30 0.43
L1 0.06 0.13
A
0.10 C
0.10 C
DETAIL A
14
8L1
e/2
8X
D2
G
E2
K
b
A0.10 B
C
0.05 C
L
DETAIL A
A1
e
6X
c
4X
C
SEATING
PLANE
5
MAX
0.80
0.05
0.40
0.25
3.15
2.24
3.15
1.73
0.51
0.95
0.56
0.20
M
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
0.650.42
0.75 2.30
3.46
PACKAGE
8X
0.055 0.059
0 −−−
_
0.063
12
_
0.028 0.030
0.000 −−−
0.009 0.012
0.006 0.008
0.116 0.120
0.078 0.083
0.116 0.120
0.058 0.063
0.026 BSC
0.012 0.016
0.026 0.032
0.012 0.017
0.002 0.005
0.031
0.002
0.016
0.010
0.124
0.088
0.124
0.068
0.020
0.037
0.022
0.008
MIN NOM
INCHES
MAX
78
PITCH
3.60
0.57
0.47
OUTLINE
DIMENSION: MILLIMETERS
3.30 BSC
3.30 BSC
0.130 BSC
0.130 BSC
2.37
0.66
4X
E3 0.23 0.30 0.40 0.009 0.012 0.016
E3
4X
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NTTFS3A08P/D
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