SEMICONDUCTOR KTN2222S/AS TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B L FEATURES L : ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. D *Low Leakage Current 2 H A 3 G *Low Saturation Voltage : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. 1 *Complementary to the KTN2907S/2907AS. Q P K J N C P MAXIMUM RATING (Ta=25) MILLIMETERS 2.93 +_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 0.1 MAX M 1. EMITTER RATING CHARACTERISTIC DIM A B C D E G H J K L M N P Q 2. BASE SYMBOL UNIT 3. COLLECTOR KTN2222S KTN2222AS Collector-Base Voltage VCBO 60 75 V Collector-Emitter Voltage VCEO 30 40 V Emitter-Base Voltage VEBO 5 6 V Collector Current Collector Power Dissipation (Ta=25) Junction Temperature Storage Temperature Range IC 600 mA PC 350 mW Tj 150 Tstg -55150 SOT-23 Note : PC* : Package Mounted on 99.5% alumina 10x8x0.6mm. Marking Lot No. Type Name ZB Type Name Lot No. ZG MARK SPEC TYPE MARK KTN2222S Z B KTN2222AS Z G 1999. 5. 4 Revision No : 2 1/5 KTN2222S/AS ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC Collector Cut-off Current SYMBOL KTN2222AS MIN. TYP. MAX. UNIT VCE=60V, VEB(OFF)=3V - - 10 nA VCB=50V, IE=0 - - 0.01 VCB=60V, IE=0 - - 0.01 IEBO VEB=3V, IC=0 - - 10 60 - - V(BR)CBO IC=10A, IE=0 75 - - 30 - - 40 - - 5 - - 6 - - ICEX KTN2222S KTN2222AS Emitter Cut-off Current KTN2222AS Collector-Base KTN2222S Breakdown Voltage KTN2222AS * KTN2222S V(BR)CEO Breakdown Voltage KTN2222AS Emitter-Base KTN2222S Breakdown Voltage KTN2222AS DC Current Gain V(BR)EBO IE=10A, IC=0 hFE(1) IC=0.1mA, VCE=10V 35 - - KTN2222S hFE(2) IC=1mA, VCE=10V 50 - - KTN2222AS hFE(3) IC=10mA, VCE=10V 75 - - hFE(4) IC=150mA, VCE=10V 100 - 300 30 - - hFE(5) IC=500mA, VCE=10V 40 - - - - 0.4 KTN2222AS - - 0.3 KTN2222S - - 1.6 - - 1 - - 1.3 0.6 - 1.2 - - 2.6 - - 2.0 VCE=20V, IC=20mA, 250 - - f=100MHz 300 - - - - 8 - - 30 - - 25 KTN2222S VCE(sat)1 * Saturation Voltage V IC=150mA, IB=15mA V VCE(sat)2 IC=500mA, IB=50mA KTN2222AS KTN2222S VBE(sat)1 Saturation Voltage V * KTN2222AS Base-Emitter nA V IE=10mA, IB=0 KTN2222S Collector-Emitter A ICBO Collector Cut-off Current Collector-Emitter TEST CONDITION * IC=150mA, IB=15mA KTN2222AS V KTN2222S VBE(sat)2 IC=500mA, IB=50mA KTN2222AS KTN2222S fT Transition Frequency KTN2222AS Collector Output Capacitance Cob VCB=10V, IE=0, f=1.0MHz Cib VEB=0.5V, IC=0, f=1.0MHz KTN2222S Input Capacitance KTN2222AS MHz pF pF * Pulse Test : Pulse Width300S, Duty Cycle2%. 1999. 5. 4 Revision No : 2 2/5 KTN2222S/AS ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC Input Impedance Voltage Feedback Ratio Small-Singal Current Gain Collector Output Admittance KTN2222AS KTN2222AS KTN2222AS KTN2222AS SYMBOL TEST CONDITION MIN. TYP. MAX. IC=1mA, VCE=10V, f=1kHz 2 - 8 IC=10mA, VCE=10V, f=1kHz 0.25 - 1.25 IC=1mA, VCE=10V, f=1kHz - - 8 IC=10mA, VCE=10V, f=1kHz - - 4 IC=1mA, VCE=10V, f=1kHz 50 - 300 IC=10mA, VCE=10V, f=1kHz 75 - 375 IC=1mA, VCE=10V, f=1kHz 5 - 35 IC=10mA, VCE=10V, f=1kHz 25 - 200 - - 150 pS - - 4 dB hie UNIT k hre x10-4 hfe hoe Collector-Base Time Constant KTN2222AS Cc*rbb' Noise Figure KTN2222AS NF IE=20mA, VCB=20V, f=31.8MHz IC=100A, VCE=10V, Rg=1k, f=1kHz Delay Time td VCC=30V, VBE(OFF)=0.5V - - 10 Rise Time tr IC=150mA, IB1=15mA - - 25 Storage Time tstg VCC=30V, IC=150mA - - 225 Fall Time tf IB1=-IB2=15mA - - 60 Switching Time 1999. 5. 4 nS Revision No : 2 3/5 KTN2222S/AS 1999. 5. 4 Revision No : 2 4/5 KTN2222S/AS 1999. 5. 4 Revision No : 2 5/5