TLP785,TLP785F
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Toshiba Electronic Devices & Storage Corporation
1
2
3
4
1 : Anode
2 : Cathode
3 : Emitter
4 : Collector
TOSHIBA Photocoupler IRED & PhotoTransistor
TLP785, TLP785F
Office Equipment
Home Electric Appliances
Solid-State Relays
Switching Power Supplies
Contactless Controller Outputs
Simplex/Multiplex Data Transmission
The TOSHIBA TLP785 consists of a silicone phototransistor optically
coupled to an infrared emitting diode in a four lead plastic DIP (DIP4) with
having high isolation voltage
(AC: 5000 Vrms (min)).
TLP785F is a lead forming type for the long creepage surface mounting
of TLP785.
TLP785: 7.62 mm pitch type DIP4
TLP785F: 10.16 mm pitch type DIP4
Collector-emitter voltage: 80 V (min)
Current transfer ratio: 50% (min)
Rank GB: 100% (min)
Isolation voltage: 5000 Vrms (min)
UL-recognized : UL 1577, File No.E67349
cUL-recognized :CSA Component Acceptance Service No.5A
File No.E67349
VDE-approved : EN 60747-5-5 (Note 1)
CQC-approved: GB4943.1, GB8898 China Factory
SEMKO-approved : EN 62368-1
Note 1 : When a VDE approved type is needed,
please designate the Option(D4).
Construction mechanical rating
7.62 mm Pitch
Standard Type
10.16 mm Pitch
TLPxxxF Type
Creepage distance 7.0 mm (min) 8.0 mm (min)
Clearance 7.0 mm (min) 8.0 mm (min)
Insulation thickness 0.4 mm (min) 0.4 mm (min)
Inner creepage distance 4.0 mm (min) 4.0 mm (min)
Unit:
TOSHIBA
11-5L1
Unit:
TOSHIBA
11-5L102
TLP785
TLP785F
Pin Configurations (top view)
Start of commercial production
2010-11
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Current Transfer Ratio (Note)
Type Classification
(Note 1)
Current Transfer Ratio (%)
(IC / IF)
Marking of Classification
IF = 5mA, VCE = 5V, Ta = 25°C
Min
Max
TLP785
None 50 600 Blank
Rank Y 50 150 YE
Rank GR 100 300 GR
Rank BL 200 600 BL
Rank GB 100 600 GB
Rank YH 75 150 Y+
Rank GRL 100 200 G
Rank GRH 150 300 G+
Rank BLL 200 400 B
Note 1: e.g. rank GB: TLP785 (GB)
Note: Application type name for certification test, please use standard product type name, e.g.
TLP785 (GB): TLP785
Absolute Maximum Ratings (Note) (Ta = 25°C)
Characteristics Symbol Rating Unit
LED
Forward current IF 60 mA
Forward current derating (Ta 39°C) ΔIF / °C 0.7 mA / °C
Pulse forward current (Note 2) IFP 1 A
Power dissipation PD 90 mW
Power dissipation derating (Ta 39°C) ΔPD / °C 0.9 mW / °C
Reverse voltage VR 5 V
Junction temperature Tj 125 °C
Detector
Collectoremitter voltage VCEO 80 V
Emittercollector voltage VECO 7 V
Collector current IC 50 mA
Power dissipation (single circuit) PC 150 mW
Power dissipation derating
(Ta 25°C) ΔPC / °C 1.5 mW / °C
Junction temperature Tj 125 °C
Operating temperature range Topr 55 to 110 °C
Storage temperature range Tstg 55 to 125 °C
Lead soldering temperature (10 s) Tsol 260 °C
Total package power dissipation PT 240 mW
Total package power dissipation derating
(Ta 25°C) ΔPT / °C 2.4 mW / °C
Isolation voltage (Note 3) BVS 5000 Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 2: Pulse Width: 100 μs or less, 100 Hz frequency
Note 3: AC, 60 s., R.H. 60%. Apply voltage to LED pin and detector pin together.
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Recommended Operating Conditions (Note)
Characteristics Symbol Min Typ. Max Unit
Supply voltage VCC 5 24 V
Forward current IF 16 25 mA
Collector current IC 1 10 mA
Operating temperature Topr 25 85 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Individual Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
LED
Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V
Reverse current IR VR = 5 V 10 μA
Capacitance CT V = 0 V, f = 1 MHz 30 pF
Detector
Collectoremitter
breakdown voltage V(BR) CEO IC = 0.5 mA 80 V
Emittercollector
breakdown voltage V(BR) ECO IE = 0.1 mA 7 V
Collector dark current ID(ICEO)
VCE = 24 V 0.01 0.1 μA
VCE = 24 V ,Ta = 85 °C 0.6 50 μA
Capacitance (collector to emitter) CCE V = 0 V, f = 1 MHz 6 pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Current transfer ratio IC / IF
IF = 5 mA, VCE = 5 V
Rank GB
50 600
%
100 600
Saturated CTR IC / IF (sat)
IF = 1 mA, VCE = 0.4 V
Rank GB
60
%
30
Collectoremitter saturation voltage VCE (sat)
IC = 2.4 mA, IF = 8 mA 0.4
V
IC = 0.2 mA, IF = 1 mA
Rank GB
0.2
0.4
Isolation Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Capacitance (input to output) CS VS = 0 V, f = 1 MHz 0.8 pF
Isolation resistance RS VS = 500 V, R.H. 60 % 1×1012 1014 Ω
Isolation voltage BVS AC, 60 s 5000 Vrms
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Switching Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Rise time tr
VCC = 10 V, IC = 2 mA
RL = 100 Ω
2
μs
Fall time tf 3
Turnon time ton 3
Turnoff time toff 3
Turnon time ton
RL = 1.9 kΩ (fig. 1)
VCC = 5 V, IF = 16 mA
1.5
μs
Storage time ts 25
Turnoff time toff 50
Surface-Mount Lead Form Option
TOSHIBA 11-5L107
Weight: 0.25 g (typ.)
TOSHIBA 11-5L106
Weight: 0.24 g (typ.)
Unit: mm
TLP785(LF6)
TLP785F(LF7)
Unit: mm
IF
VCE
V
CC
ton
4.5
V
0.5 V
toff
t
s
VCC
V
CE
IF
R
L
fig. 1: Switching time test circuit
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Option: Specifications for Embossed-Tape Packing; (TP6) / (TP7)
1. Applicable Package
Package Name Product Type
DIP4LF6 TLP785
DIP4LF7 TLP785F
2. Product Naming System
Type of package used for shipment is denoted by a symbol suffix after a product number. The method of
classification is as below.
(Example1)
TLP785 (BLTP6,F
[[G]]/RoHS COMPATIBLE(Note)
Tape type
CTR Rank
Device name
(Example2)
TLP785F (BLTP7,F
[[G]]/RoHS COMPATIBLE(Note)
Tape type
CTR Rank
Device name
Note: Please contact your Toshiba sales representative for details on environmental information such as the product's
RoHS compatibility.
RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the
restriction of the use of certain hazardous substances in electrical and electronics equipment.
3. Tape Dimensions
3.1 Orientation of Device in Relation to Direction of Tape Movement
Device orientation in the recesses is as shown in Figure 2.
Figure2 Device Orientation
3.2 Tape Packing Quantity:2000 devices per reel
Tape feed
P
1pin indication
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3.3 Empty Device Recesses Are as Shown in Table 1.
Table1 Empty Device Recesses
Standard Remarks
Occurrences of 2 or more
successive empty device
recesses
0 device
Within any given 40mm section of
tape, not including leader and trailer
Single empty device
recesses 6 devices (max) per reel Not including leader and trailer
3.4 Start and End of Tape
The start of the tape has 30 or more empty holes. The end of the tape has 50 or more empty holes.
3.5 Tape Specification
[1] TLP785(TP6) / TLP785F(TP7)
Tape material: Synthetic Resin
Dimensions: The tape dimensions are as shown in Figure 3.
Figure 3 Tape Forms
TP6 Type
TP7 Type
A
5.1±0.1
5.05±0.1
B
10.6±0.1
12.35±0.1
W
16.0±0.3
24.0±0.3
F
7.5±0.1
11.5±0.1
T
4.2±0.15
4.4±0.1
Unit: mm
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3.6 Reel Specification
[1] TLP785(TP6) / TLP785F(TP7)
Material: Synthetic Resin
Dimensions: The reel dimensions are as shown in Figure 4.
Figure 4 Reel Forms
4. Packing
Two reels of photocouplers are packed in a shipping carton.
5. Label Indication
The carton bears a label indicating the product number, the symbol representing classification of standard, the
quantity, the lot number and the Toshiba company name.
6. Ordering Information
When placing an order, please specify the product number, the CTR rank, the tape type and the quantity as
shown in the following example.
(Example)
TLP785(BLTP6,F 4000pcs.
Quantity (must be a multiple of 4000)
[[G]]/RoHS COMPATIBLE(Note 1)
Tape type
CTR Rank
Device name
Note: The order code may be suffixed with a letter or a digit.
Please contact your nearest Toshiba sales representative for more details.
Note 1: Please contact your Toshiba sales representative for details on environmental information such as the product's
RoHS compatibility.
RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the
restriction of the use of certain hazardous substances in electrical and electronics equipment.
W1
W2
φ330 max
φ100±1.5
φ13.0±0.5
4.0±0.5
2.0±0.5
Unit: mm
TP6 Type TP7 Type
W1
16.5yp 24.4typ
W2 23max 30.4max
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7. Soldering and Storage
7.1. Precautions for Soldering
The soldering temperature should be controlled as closely as possible to the conditions shown below, irrespective of
whether a soldering iron or a reflow soldering method is used.
When using soldering reflow
The soldering temperature profile is based on the package surface temperature.
(See the figure shown below, which is based on the package surface temperature.)
Reflow soldering must be performed once or twice.
The mounting should be completed with the interval from the first to the last mountings being 2 weeks.
Fig. 7.1 An Example of a Temperature Profile When Lead(Pb)-Free Solder Is Used
When using soldering flow
Preheat the device at a temperature of 150 °C (package surface temperature) for 60 to 120 seconds.
Mounting condition of 260 °C within 10 seconds is recommended.
Flow soldering must be performed once.
When using soldering Iron
Complete soldering within 10 seconds for lead temperature not exceeding 260 °C or within 3 seconds not
exceeding 350 °C
Heating by soldering iron must be done only once per lead.
7.2. Precautions for General Storage
Avoid storage locations where devices may be exposed to moisture or direct sunlight.
Follow the precautions printed on the packing label of the device for transportation and storage.
Keep the storage location temperature and humidity within a range of 5°C to 35°C and 45% to 75%,
respectively.
Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty
conditions.
Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during
storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the solderability
of the leads.
When restoring devices after removal from their packing, use anti-static containers.
Do not allow loads to be applied directly to devices while they are in storage.
If devices have been stored for more than two years under normal storage conditions, it is recommended
that you check the leads for ease of soldering prior to use.
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EN 60747-5-5Option: (D4)
Attachment: Specification for EN 60747-5-5 option: (D4)
Types: TLP785, TLP785F
Type designations for ‘option: (D4) ’, which are tested under EN 60747 requirements.
e.g.: TLP785(D4-GR-LF6,F D4: EN 60747 option
GR: CTR rank name
LF6: standard lead bend name
F: [[G]]/RoHS COMPATIBLE(Note 1)
Note: Use TOSHIBA standard type number for safety standard application.
e.g. TLP785(D4-GR-LF6,F TLP785
Note 1: Please contact your Toshiba sales representative for details on environmental information such as the product's
RoHS compatibility.
RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the
restriction of the use of certain hazardous substances in electrical and electronics equipment.
EN 60747 Isolation Characteristics
Description Symbol Rating Unit
Application classification
for rated mains voltage 300 Vrms
for rated mains voltage 600 Vrms
IIV
IIII
Climatic classification
55 / 115 / 21
Pollution degree 2
Maximum operating insulation voltage
TLP785
VIORM
890
Vpk
TLP785F 1140
Input to output test voltage,
Vpr = 1.6×VIORM, type and sample test
tp = 10 s, partial discharge < 5pC
TLP785
Vpr
1424
Vpk
TLP785F 1824
Input to output test voltage,
Vpr = 1.875×VIORM, 100% production test
tp = 1 s, partial discharge < 5pC
TLP785
Vpr
1670
Vpk
TLP785F 2140
Highest permissible overvoltage
(transient overvoltage, tpr = 60s) VTR 8000 Vpk
Safety limiting values (max. permissible ratings in case of fault)
current (input current) Psi = 0mW
power (output or total power dissipation)
temperature
Isi
Psi
Ts
400
700
175
mA
mW
°C
Insulation resistance, VIO = 500 V, Ta=25°C Rsi 1012 Ω
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Insulation Related Specifications
7.62 mm pitch
TLPxxx type
10.16 mm pitch
TLPxxxF type
Minimum creepage distance Cr 7.0 mm 8.0 mm
Minimum clearance Cl 7.0 mm 8.0 mm
Minimum insulation thickness ti 0.4 mm
Comparative tracking index CTI 175
(1) If a printed circuit is incorporated, the creepage distance and clearance may be reduced below this
value. (e.g.at a standard distance between soldering eye centres of 7.5mm). If this is not permissible,
the user shall take suitable measures.
(2) This photocoupler is suitable for safe electrical isolationonly within the safety limit data.
Maintenance of the safety data shall be ensured by means of protective circuits.
VDE test sign: Marking on product
for EN 60747
Marking on packing
for EN 60747
Marking Example: TLP785, TLP785F
P
4
CTR Rank Marking
Lot No
.
Part No. (or abbreviation code)
4: Mark for option (D4)
1pin indication
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Figure
1 Partial discharge measurement procedure according to EN 60747
Destructive test for qualification and sampling tests.
Method A
(for type and sampling tests,
destructive tests)
t1, t2
t3, t4
tp(Measuring time for
partial discharge)
tb
tini
V
VINITIAL(8kV)
V
pr(1424 V for TLP785)
(1824 V for TLP785F)
V
IORM(890 V for TLP785)
(1140 V for TLP785F)
0
t
1
t
ini
t3
t2
tP
t
b
t4
t
= 1 to 10 s
= 1 s
= 10 s
= 12 s
= 60 s
tP
V
pr
(1670 V for TLP785)
(2140 V for TLP785F)
V
IORM
(890 V for TLP785)
(1140 V for TLP785F)
V
t
t3
t4
tb
Figure
2 Partial discharge measurement procedure according to EN 60747
Non-destructive test for100% inspection.
Method B
(for sample test,non-
destructive test)
t3, t4
tp(Measuring time for
partial discharge)
tb
= 0.1 s
= 1 s
= 1.2 s
Figure
3 Dependency of maximum safety ratings on ambient temperature
500
400
300
200
100
0
0
25
50
75
100
125
150
175
1000
800
600
400
200
0
Ta (°C)
Psi
Isi
Isi
(mA)
Psi
(mW)
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I
F
-Ta
P
C
-Ta
F
orward current
IF (mA)
Collector power dissipation P
C (mW)
Ambient temperature Ta (˚C)
Ambient temperature Ta (˚C)
V
F
/Ta- I
F
IF- V F
Forward voltage temperature
coefficient
ΔVF/ΔTa ( m V/°C)
Forward current I
F (mA)
Forward current I
F
(mA)
Forward voltage V
F
(V)
IF P V F P
Pulse forward current I
FP (mA)
Pulse forward voltage V
FP
(V)
0
20
40
60
80
100
-20 020 40 60 80 100 120
0
40
80
120
160
200
-20 020 40 60 80 100 120
-3
-2.6
-2.2
-1.8
-1.4
-1
-0.6
0.1 110 100
0.1
1
10
100
0.4 0.9 1.4 1.9
1
10
100
1000
00.4 0.8 1.2 1.6 22.4
Pulse width 10 μs
Repetitive frequency=100 Hz
Ta=25°C
This curve shows the maximum
limit to the forward current.
This curve shows the
maximum limit to the
collector power dissipation.
Ta=25˚C
NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
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ICEO-Ta
I
C
- V
CE
Collector dark current ID
(μA )
Collector current I
C (mA)
Ambient temperature Ta (°C)
Collector-emitter voltage V
CE
(V)
IC- V CE
IC- I F
Collector current I
C (mA)
Collector current I
C (mA)
Collector-emitter voltage V
CE
(V)
IC/IF - I F
Forward current IF (mA)
Current transfer ratio IC / IF (%)
Forward current I
F
(mA)
0.0001
0.001
0.01
0.1
1
10
020 40 60 80 100
0
20
40
60
80
0 2 4 6 8 10
0
10
20
30
40
00.2 0.4 0.6 0.8 11.2
1
10
100
1000
0.1 110 100
5
10
50
30
20
15
Ta=25˚C
IF= 2 mA
Ta=25˚C
5
10
50
30
20
15
IF= 2 mA
VCE=5 V
VCE=0.4 V
Ta=25˚C
VCE =24 V
Ta=25˚C
VCE=5 V
VCE=0.4 V
NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
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I
C
- Ta
V
CE(sat)
- Ta
Collector current I
C (mA)
Collector-Emitter saturation Voltage
VCE(sat) (V)
Ambient temperature Ta (°C)
Ambient temperature Ta ( °C)
Switching time - R
L
Switching time (μs)
Load resistance RL (kΩ)
0.1
1
10
100
-40 -20 020 40 60 80 100
0
0.04
0.08
0.12
0.16
0.2
-40 -20 020 40 60 80 100
1
10
100
1000
110 100
IF=5 mA,
IC=1 mA
IF=0.5 mA
5
1
10
20
t
off
Ta=25˚C
IF=16 mA
VCC=5 V
ts
ton
VCE=5 V
NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
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RESTRICTIONS ON PRODUCT USE
Toshiba Corporation and its subsidiaries and affiliates are collectively referred to asTOSHIBA”.
Hardware, software and systems described in this document are collectively referred to as “Product”.
TOSHIBA reserves the right to make changes to the information in this document and related Product without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
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limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, lifesaving and/or life supporting medical
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