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DATA SH EET
Product data sheet
Supersedes data of 1996 Sep 17
1999 May 25
DISCRETE SEMICONDUCTORS
BAV20; BAV21
General purpose diodes
M3D17
6
1999 May 25 2
NXP Semiconductors Product data sheet
General purpose diodes BAV20; BAV21
FEATURES
•Hermetically sealed leaded glass
SOD27 (DO-35) package
•Switching speed: max. 50 ns
•General application
•Continuous reverse voltage:
max. 150 V, 200 V
•Repetitive peak reverse voltage:
max. 200 V, 250 V
•Repetitive peak fo rward current:
max. 625 mA.
APPLICATIONS
•General purposes in industrial
equipment e.g. oscilloscopes,
digital voltmeters and video output
stages in colour television.
DESCRIPTION
The BAV20 and BAV21 are switching diodes fabricated in planar technology,
and encapsulated in hermetically sealed lea ded glass SOD27 (D O-35)
packages.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
The diodes are type branded.
handbook, halfpage
MAM246
ka
1999 May 25 3
NXP Semiconductors Pr oduct data shee t
General purpose diodes BAV20; BAV21
LIMITING VALUES
In accordance with th e Absolute Maximum Ratin g S ystem (IEC 134).
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage
BAV20 −200 V
BAV21 −250 V
VRcontinuous peak reverse voltage
BAV20 −150 V
BAV21 −200 V
IFcontinuous forward current see Fig.2; note 1 −250 mA
IFRM repetitive peak forward current −625 mA
IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 μs−9 A
t = 100 μs−3 A
t = 1 s −1 A
Ptot total power dissipation Tamb = 25 °C; note 1 −400 mW
Tstg storage temperature −65 +175 °C
Tjjunction temperature −175 °C
1999 May 25 4
NXP Semiconductors Pr oduct data shee t
General purpose diodes BAV20; BAV21
ELECTRICAL CHARACTERISTIC S
Tj = 25 °C unless otherwise specified.
THERMAL CHARACTE RISTICS
Note
1. Device mounted on a printed circuit-board without metallization pad.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VFforward voltage see Fig.3
IF = 100 mA −1.0 V
IF = 200 mA −1.25 V
IRreverse current see Fig.5
VR = VRmax −100 nA
VR = VRmax; Tj = 150 °C−100 μA
Cddiode capacitan ce f = 1 MHz; VR = 0; see Fig.6 −5pF
trr reverse recove ry time when switched from IF = 30 mA to
IR = 30 mA; RL = 100 Ω; measured
at IR = 3 mA; see Fig.8
−50 ns
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-tp thermal resistance from junction to tie-point lead length 10 mm 240 K/W
Rth j-a thermal resistance from junction to ambient lead length 10 mm; note 1 375 K/W
1999 May 25 5
NXP Semiconductors Pr oduct data shee t
General purpose diodes BAV20; BAV21
GRAPHICAL DATA
Fig.2 Maximum permis sible continuous forward
current as a func tion of ambient
temperature.
handbook, halfpage
0 100 200
300
200
0
100
MBG449
Tamb (oC)
IF
(mA)
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
Fig.3 Forward current as a function of forward
voltage.
handbook, halfpage
012
600
0
200
400
MBG459
VF (V)
IF
(mA)
(1) (2) (3)
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of p uls e duration.
Based on square wave currents.
Tj = 25 °C prior to surge.
handbook, full pagewidth
MBG703
10 tp (μs)
1
IFSM
(A)
102
10−1104
102103
10
1
1999 May 25 6
NXP Semiconductors Pr oduct data shee t
General purpose diodes BAV20; BAV21
Fig.5 Reverse current as a function of junction
temperature.
handbook, halfpage
0 100 Tj (
o
C) 200
10
3
10
2
10
−1
10
−2
10
1
IR
(μA)
MGD009
VR = VRmax.
Solid line; maximum values.
Dotted line; typical values.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj = 25 °C.
handbook, halfpage
01020
1.6
1.4
1.0
0.8
1.2
MGD005
VR (V)
Cd
(pF)
Fig.7 Maximum permissible continuous reverse
voltage as a function of ambient
temperature.
(1) BAV21.
(2) BAV20.
handbook, halfpage
0 200
300
0
100
200
MGL588
100
(1)
VR
(V)
Tamb (oC)
(2)
1999 May 25 7
NXP Semiconductors Pr oduct data shee t
General purpose diodes BAV20; BAV21
Fig.8 Reverse reco very voltage test circuit and waveforms.
handbook, full pagewidth
trr
(1)
IFt
output signal
trt
tp
10%
90%
VR
input signal
V = V I x R
RF S
R = 50
SΩIF
D.U.T.
R = 50
iΩ
SAMPLING
OSCILLOSCOPE
MGA881
(1) IR = 3 mA.
1999 May 25 8
NXP Semiconductors Pr oduct data shee t
General purpose diodes BAV20; BAV21
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
Note
1. The marking band indicates the cathode.
SOD27 DO-35A24 SC-40 97-06-09
Hermetically sealed glass package; axial leaded; 2 leads SOD2
7
UNIT b
max.
mm 0.56
D
max. G1
max.
25.44.251.85
L
min.
DIMENSIONS (mm are the original dimensions)
G1
LD L
b
(1)
0 1 2 mm
scale
1999 May 25 9
NXP Semiconductors Product data sheet
General purpose diodes BAV20; BAV21
DATA SHEET STATUS
Notes
1. Please consult the most rec en tly issued document before initiating or co mpleting a design.
2. The product s tatus of device(s) described in this document may have changed since this document was pub lis hed
and may differ in case of multiple devices. The latest product status information is available on th e Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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reserves the right to make changes to information
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modification .
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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regulations. Export might require a prior authorization from
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Quick refer ence data ⎯ The Quick reference data is an
extract of th e product data given in the Limiting values an d
Characteristics sections of this docu ment, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information pr e sent ed in this document d oes not form part o f an y quotation or cont ra ct, is b elieve d t o b e a ccur ate a nd re li a ble and may be chan ged
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Printed in The Netherlands 115002/03/pp10 Date of release: 1999 May 25 Document orde r number: 9397 750 05895
