1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon
MAXIMUM RATINGS
Rating Symbol BC559 BC560 Unit
Collector–Emitter Voltage VCEO –30 –45 Vdc
Collector–Base Voltage VCBO –30 –50 Vdc
Emitter–Base Voltage VEBO –5.0 Vdc
Collector Current — Continuous IC–100 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°CPD625
5.0 mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD1.5
12 Watt
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg –55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
q
JA 200 °C/W
Thermal Resistance, Junction to Case R
q
JC 83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mAdc, IB = 0) BC559
BC560
V(BR)CEO –30
–45 —
——
—
Vdc
Collector–Base Breakdown Voltage
(IC = –10 µAdc, IE = 0) BC559
BC560
V(BR)CBO –30
–50 —
——
—
Vdc
Emitter–Base Breakdown Voltage
(IE = –10
m
Adc, IC = 0) V(BR)EBO –5.0 — — Vdc
Collector Cutoff Current
(VCB = –30 Vdc, IE = 0)
(VCB = –30 Vdc, IE = 0, TA = +125°C)
ICBO —
——
—–15
–5.0 nAdc
µAdc
Emitter Cutoff Current
(VEB = –4.0 Vdc, IC = 0) IEBO — — –15 nAdc
Order this document
by BC559/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
123
Motorola, Inc. 1996
COLLECTOR
1
2
BASE
3
EMITTER
REV 1
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –10 µAdc, VCE = –5.0 Vdc) BC559B
BC559C/560C
(IC = –2.0 mAdc, VCE = –5.0 Vdc) BC559B
BC559C/560C
BC559
hFE 100
100
180
380
120
150
270
290
500
—
—
—
460
800
800
—
Collector–Emitter Saturation Voltage
(IC = –10 mAdc, IB = –0.5 mAdc)
(IC = –10 mAdc, IB = see note 1)
(IC = –100 mAdc, IB = –5.0 mAdc, see note 2)
VCE(sat) —
—
—
–0.075
–0.3
–0.25
–0.25
–0.6
—
Vdc
Base–Emitter Saturation Voltage
(IC = –100 mAdc, IB = –5.0 mAdc) VBE(sat) — –1.1 — Vdc
Base–Emitter On Voltage
(IC = –10 µAdc, VCE = –5.0 Vdc)
(IC = –100 µAdc, VCE = –5.0 Vdc)
(IC = –2.0 mAdc, VCE = –5.0 Vdc)
VBE(on) —
—
–0.55
–0.52
–0.55
–0.62
—
—
–0.7
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz) fT— 250 — MHz
Collector–Base Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Ccbo — 2.5 — pF
Small–Signal Current Gain
(IC = –2.0 mAdc, VCE = –5.0 V, f = 1.0 kHz) BC559B
BC559C/BC560C
hfe 240
450 330
600 500
900
—
Noise Figure
(IC = –200 µAdc, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz)
(IC = –200 µAdc, VCE = –5.0 Vdc, RS = 100 kΩ, f = 1.0 kHz, ∆f = 200 kHz) NF1
NF2—
—0.5
—2.0
10
dB
NOTES:
1. IB is value for which IC = –11 mA at VCE = –1.0 V.
2. Pulse test = 300 µs – Duty cycle = 2%.
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2.0
1.5
1.0
0.2
0.3
0.4
0.6
0.8
–0.2 IC, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
hFE, NORMALIZED DC CURRENT GAIN
VCE = –10 V
TA = 25
°
C
–1.0
–0.9
–0.8
–0.7
–0.6
–0.5
–0.4
–0.3
–0.2
–0.1
0–0.2–0.1 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100
IC, COLLECTOR CURRENT (mAdc)
Figure 2. “Saturation” and “On” Voltages
V, VOLTAGE (VOLTS)
TA = 25
°
C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = –10 V
VCE(sat) @ IC/IB = 10
400
20
30
40
60
80
100
200
300
–0.5 IC, COLLECTOR CURRENT (mAdc)
Figure 3. Current–Gain — Bandwidth Product
fT, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
C, CAPACITANCE (pF)
10
1.0
2.0
3.0
5.0
7.0
–0.4 –0.6 –1.0 –2.0 –4.0 –10 –20 –40
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
TA = 25
°
C
Cib
Cob
rb, BASE SPREADING RESISTANCE (OHMS)
170
160
150
140
130
120 –10–0.1 –0.2 –0.5 –1.0 –2.0 –5.0
IC, COLLECTOR CURRENT (mAdc)
Figure 5. Base Spreading Resistance
VCE = –10 V
f = 1.0 kHz
TA = 25
°
C
–0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200
VCE = –10 V
TA = 25
°
C
–0.7 –1.0 –2.0 –5.0 –10–7.0 –20 –50
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
HSECTION X–X
C
V
D
N
N
X X
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.022 0.41 0.55
F0.016 0.019 0.41 0.48
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 ––– 12.70 –––
L0.250 ––– 6.35 –––
N0.080 0.105 2.04 2.66
P––– 0.100 ––– 2.54
R0.115 ––– 2.93 –––
V0.135 ––– 3.43 –––
1
CASE 029–04
(TO–226AA)
ISSUE AD
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
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