DATA SH EET
Product specification
Supersedes data of April 1996 1996 Sep 03
DISCRETE SEMICONDUCTORS
1N4531; 1N4532
High-speed diodes
b
ook, halfpage
M3D050
1996 Sep 03 2
Philips Semiconductors Product specification
High-speed diodes 1N4531; 1N4532
FEATURES
•Hermetically sealed leaded glass
SOD68 (DO-34) package
•High switching speed: max. 4 ns
•Continuous reverse voltage:
max. 75 V
•Repetitive peak reverse voltage:
max. 75 V
•Repetitive peak forward current:
max. 450 mA.
APPLICATIONS
•High-speed switching
•Protection diodes in reed relays.
DESCRIPTION
The 1N4531, 1N4532 are high-speed switching diodes fabricated in planar
technology, and encapsulated in hermetically sealed leaded glass
SOD68 (DO-34) packages.
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
handbook, halfpage
MAM156
ka
The diodes are type branded.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage −75 V
VRcontinuous reverse voltage −75 V
IFcontinuous forward current see Fig.2 −200 mA
IFRM repetitive peak forward current −450 mA
IFSM non-repetitive peak forward current square wave; Tj=25°C prior to
surge; see Fig.4
t=1µs−4A
t=1ms −1A
t=1s −0.5 A
Ptot total power dissipation Tamb =25°C−500 mW
Tstg storage temperature −65 +200 °C
Tjjunction temperature −200 °C
1996 Sep 03 3
Philips Semiconductors Product specification
High-speed diodes 1N4531; 1N4532
ELECTRICAL CHARACTERISTICS
Tj=25°C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed circuit-board without metallization pad.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VFforward voltage IF= 10 mA; see Fig.3 −1000 mV
IRreverse current see Fig.5
IN4531 VR=20V −25 nA
VR=20V; T
j= 150 °C−50 µA
IN4532 VR=50V −100 nA
VR=50V; T
j= 150 °C−100 µA
Cddiode capacitance f = 1 MHz; VR= 0; see Fig.6
IN4531 −4pF
IN4532 −2pF
t
rr reverse recovery time when switched from IF= 10 mA to
IR= 60 mA; RL= 100 Ω;
measured at IR= 1 mA; see Fig.7
IN4531 −4ns
IN4532 −2ns
reverse recovery time when switched from IF= 10 mA to
IR= 10 mA; RL= 100 Ω;
measured at IR= 1 mA; see Fig.7
IN4532 −4ns
V
fr forward recovery voltage when switched from IF= 100 mA;
tr≤30 ns; see Fig.8 −3V
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-tp thermal resistance from junction to tie-point lead length 5 mm 120 K/W
Rth j-a thermal resistance from junction to ambient lead length 5 mm; note 1 350 K/W
1996 Sep 03 4
Philips Semiconductors Product specification
High-speed diodes 1N4531; 1N4532
GRAPHICAL DATA
Lead length 5 mm.
Fig.2 Maximum permissible continuous forward
current as a function of ambient temperature.
handbook, halfpage
0 100 200
300
200
0
100
MBG450
Tamb (oC)
IF
(mA)
Fig.3 Forward current as a function of forward
voltage.
handbook, halfpage
012
600
0
200
400
MBG458
VF (V)
IF
(mA)
(1) (2) (3)
(1) Tj= 175 °C; typical values.
(2) Tj=25°C; typical values.
(3) Tj=25°C; maximum values.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
Tj=25°C prior to surge.
handbook, full pagewidth
MBG704
10 tp (µs)
1
IFSM
(A)
102
10−1104
102103
10
1
1996 Sep 03 5
Philips Semiconductors Product specification
High-speed diodes 1N4531; 1N4532
Fig.5 Reverse current as a function of junction
temperature.
handbook, halfpage
0 100 Tj (oC) 200
103
102
10−1
10−2
10
1
IR
(µA)
MGD010
VR=50V
Solid line; maximum values.
Dotted line; typical values.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj=25°C.
handbook, halfpage
01020
1.2
1.0
0.6
0.4
0.8
MGD004
VR (V)
Cd
(pF)
1996 Sep 03 6
Philips Semiconductors Product specification
High-speed diodes 1N4531; 1N4532
Fig.7 Reverse recovery voltage test circuit and waveforms.
handbook, full pagewidth
trr
(1)
IFt
output signal
trt
tp
10%
90%
VR
input signal
V = V I x R
RF S
R = 50
SΩIF
D.U.T.
R = 50
iΩ
SAMPLING
OSCILLOSCOPE
MGA881
(1) IR= 1 mA.
Fig.8 Forward recovery voltage test circuit and waveforms.
trt
tp
10%
90%
I
input
signal
R = 50
SΩ
I
R = 50
iΩ
OSCILLOSCOPE
Ω1 k Ω450
D.U.T.
MGA882
Vfr
t
output
signal
V
1996 Sep 03 7
Philips Semiconductors Product specification
High-speed diodes 1N4531; 1N4532
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Fig.9 SOD68 (DO-34).
Dimensions in mm.
handbook, full pagewidth
1.6
max 25.4 min 25.4 min
3.04
max
0.55
max
MSA212 - 1
