A D V A N C E D S E M I C O N D U C T O R, I N C. REV. C
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/2
Specif i cations are subj ect to change wi thout notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCEO IC = 5.0 mA 24 V
BVCBO IC = 5.0 mA 50 V
BVEBO IE = 5.0 mA 3.5 V
ICEO VCE = 24 V 1.0 mA
ICBO VCB = 24 V 1.0 mA
hFE VCE = 10 V IC = 0.1 A 20 100 ---
COB VCB = 24 V f = 1.0 MHz 7.5 8.5 pF
NPN SILICON RF POWER TRANSISTOR
CBSL6
DESCRIPTION:
The ASI CBSL6 is a gold met alized
epitaxial silicon NPN transistor,
designed for high linearit y Class-AB
cellular base station applicat ions. It
also operates in Class-C.
FEATURES:
• Internal I nput Matching Net work
• 850-960MHz
• PG = 10 dB at 6.0 W/960 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 2.4 A
VCBO 50 V
VCES 35 V
VEBO 3.5 V
PDISS 53 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
θ
θθ
θJC 3.3 °C/W
PACKAGE STYLE .230 6L FLG
ORDER CODE: ASI10580
MINIMUM
inc h es / mm
.115 / 2 .92
.225 / 5 .72
.075 / 1 .91
.090 / 2 .29
.720 / 1 8.2 9
B
C
D
E
F
G
A
MAXIMUM
.085 / 2 .16
.110 / 2 .79
.730 / 1 8.5 4
.235 / 5 .97
inc h es / mm
.125 / 3 .18
H.355 / 9 .02
DIM
K
L
I
J
.004 / 0 .10
.120 / 3 .05
.230 / 5 .84
.006 / 0 .15
.130 / 3 .30
.260 / 6 .60
K
4X .025 R
.040x45°
.115
I
.125
E
.430 D
H
G F
J
C A
B
2XØ.130
L
.160 / 4 .06 .180 / 4 .57
.980 / 2 4.8 9.970 / 2 4.6 4
.355 / 9 .02 .365 / 9 .27
.365 / 9 .27