MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE FS1AS-16A OUTLINE DRAWING Dimensions in mm 65 5.0 20.2 o520.1 i" i _ | 1 | TILT | > ys ooh a O.9MAX, II | 0.5402 | i 23 23 oa, a GATE 2 DRAIN 2 SOURCE 4) DRAIN @VDSS cert cece eee ene eee e ee ete tenes 800V @ FDS (ON) (MAX) siete ttre rete teeter teeta 12.30 DID verre ence ete eee e ee teeter t een nees 1A MP-3 APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per- sonal computer etc. MAXIMUM RATINGS (1c = 25C) Symbol Parameter Conditions Ratings Unit Voss Drain-source voltage Vas = OV 800 v Vass Gate-source voltage Vos = 0V +30 Vv Ib Drain current 1 A lom Drain current (Pulsed) 3 A Pp Maximum power dissipation 55 W Toh Channel temperature ~55 ~ +150 er Tstg Storage temperature 55 ~ +150 C Weight Typical value 0.26 g 2 ~ 466 9 MITSUBISHI ELECTRICMITSUBISHI Nch POWER MOSFET FS1AS-16A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tech = 25C) Limits Symbol Parameter Test conditions it Min. | Typ. | Max) 0" V(8R) DSS | Drain-source breakdown voltage | ID = 1mA, VGS = OV 800 _ _ Vv V (BR) GSS | Gate-source breakdown voltage | IGS = +100pA, Vos = OV +30 _ _ Vv lass Gate leakage current VGS = 25V, Vos = 0V _ _ +10 pA ipss Drain current VDS = 800V, VGs = OV _ _ 1 mA VGS (th) Gate-source threshold voltage ID = 1mA, VDS = 10V 2 3 4 v tDS (ON) | Drain-source on-state resistance | ID = 0.5A, VGS = 10V _ 9.43 12.3 Q Vos (ON) | Drain-source on-state voltage | ip = 0.5A, VGS = 10V _ 4.72 6.15 v | yts | Forward transfer admittance _| ID = 0.5A, VDS = 10V 0.6 1.0 _ Ss Ciss input capacitance _ 270 _ pF Coss Output capacitance VdS = 25V, VGS = OV, f = 1MHz _ 26 _ pF Crss Reverse transfer capacitance _ 4 _ pF te fon) Turn-on delay time _ 9 = ns tr Rise time VDD = 200V, ID = 0.5A, Vas = 10V, _ 12 _ ns td (off) Turn-off delay time RGEN = RGS = 502 _ 35 _ ns tf Fail time _ 30 ~ ns Vsp Source-drain voltage Is. = 0.5A, VGS = OV _ 1.0 1.5 Vv Rt (ch-c) | Thermal resistance Channel to case _ _ 2.27 C/W PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE MAXIMUM SAFE OPERATING AREA 100 10! g = = 3 a 80 < 2 a 2 5 5 '% = 60 aH 5 < iva a ce 3 B 40 3 a z 10-1 i f i Te = 25C c = 25 FS 20 Qa 3 Single Pulse a 2 0 10-2 0 50 100 150 200 3.57101 23 57102 23 67103 23 CASE TEMPERATURE Tc (C} DRAIN-SOURCE VOLTAGE Vps (V) OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS (TYPICAL) (TYPICAL) 10 VGs = 20V 2.0 To = 25C [Te = 25C tov Pulse Test Pulse Test SV < 16 = 20V 4 oy =z 08 2 - a 7 5 12 5 06 2 rs g BD 08 a 04 z z < < oc SB 04 a 02 0 0 0 10 20 30 40 50 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE Vos (V} DRAIN-SOURCE VOLTAGE Vos (V) MITSUBISHI 2 - 467 ELECTRICMITSUBISHI Nch POWER MOSFET FS1AS-16A HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. ON-STATE RESISTANCE VS. GATE-SOURCE VOLTAGE DRAIN CURRENT (TYPICAL) (TYPICAL) To = 26C 20 Te = 25C Pulse Test Pulse Test i EG 16 = = = =e Vas =1 Oe 9S zo ZS On Oo 8 12 20V wd uu Oo? Ow & O DW 2S 8 Og O< Oi et Zeal 2 = eu 4 5 ax 0 0 0 4 8 12 16 20 10-2 23 5710-12 3 57109 23 5710! GATE-SOURCE VOLTAGE Vas (V) BRAIN CURRENT Ip (A) FORWARD TRANSFER ADMITTANCE TRANSFER CHARACTERISTICS VS.DRAIN CURRENT (TYPICAL) (TYPICAL) 1 1 Te = 26C , Vos = 15V Vos = 50V Pulse Test - Pulse Test 5 < iO 2 o 3 5 z- * iD Cw x eGo 19 c az 5 ct 7 Oo SE Z zs S83 2 0 10-1 G 4 8 12 16 20 10-1 2 3 5 7109 2 3 #5 716! GATE-SOURCE VOLTAGE Vas (V) DRAIN CURRENT Ib (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE SWITCHING CHARACTERISTICS (TYPICAL) (TYPICAL) Toh = 26C Vop = 200QV Vas = 10V ~ @ RGEN = Ras = 509 ra S32 y & oO - td{oft) ao o 9 g z ti ao = s o Pp tr 8 = ta(on) Teh = 25C f= 1MHz 400 Vas = OV 400 o 23 57100 23 57101 23 57102 2 10-7 2 345 71009 2 345 710! DRAIN-SOURCE VOLTAGE Vos (V) DRAIN CURRENT Ib (A) - MITSUBISHI o> 468 ate MTSUDRAIN-SOURCE ON-STATE RESISTANCE D8 (ON) (tC) DRAIN-SOURCE ON-STATE RESISTANCE 0s (ON) (25C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (8A) pss (tC) GATE-SOURCE VOLTAGE Vas (V) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BA) DSS (25C) 20 16 t2 101 Ro un 109 yo oan 10-1 0.4 GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) Tch = 26C ID=iA 0 4 8 12 16 20 GATE CHARGE Qg {nC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) Vas = 10V to = t/elo Pulse Test 50 0 50 100 150 CHANNEL TEMPERATURE Tech (C} BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) Vas = OV ID=1mA ~50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) TRANSIENT THERMAL IMPEDANCE = 2th (cho) ((C/W) ne aS nwo an? @ Nw an SOURCE CURRENT Is (A) GATE-SOURCE THRESHOLD VOLTAGE VGs (th) (V) MITSUBISHI Nch POWER MOSFET FS1AS-16A HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) Vas = OV Pulse Test % 0.8 1.6 2.4 3.2 4.0 SOURCE-DRAIN VOLTAGE VSD (V) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) Vos = 10V ip= mA 50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 10423 5710-323 5710223 5710-123 5710023 5710123 5710? PULSE WIDTH tw (8) MITSUBISHI 2 - 469 ELECTRIC