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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDS4480 May 2013 FDS4480 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. * 10.8 A, 40 V. RDS(ON) = 12 m @ VGS = 10 V * Low gate charge (29 nC) * High performance trench technology for extremely Applications low RDS(ON) * High power and current handling capability * DC/DC converter DD DD DD D D SO-8 SS Pin 1 SO-8 G SS G SS Absolute Maximum Ratings Symbol 5 4 6 3 7 2 8 1 o TA=25 C unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 40 V VGSS Gate-Source Voltage +30/-20 V ID Drain Current 10.8 A - Continuous (Note 1a) - Pulsed 45 Power Dissipation for Single Operation PD (Note 1a) 2.5 (Note 1b) 1.4 (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range W 1.2 -55 to +175 C Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 C/W RJA Thermal Resistance, Junction-to-Ambient (Note 1c) 125 C/W RJC Thermal Resistance, Junction-to-Case (Note 1) 25 C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS4480 FDS4480 13'' 12mm 2500 units 2002 Fairchild Semiconductor Corporation FDS4480 Rev D1 (W) Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) EAS Drain-Source Avalanche Energy IAS Drain-Source Avalanche Current Single Pulse, VDD=40V, ID=10.8A 240 mJ 10.8 A Off Characteristics ID = 250 A BVDSS BVDSS TJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient VGS = 0 V, Zero Gate Voltage Drain Current VDS = 32 V, VGS = 0 V IGSSF Gate-Body Leakage, Forward VGS = 30 V, VDS = 0 V 100 nA IGSSR Gate-Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA On Characteristics 40 ID = 250 A, Referenced to 25C V 42 mV/C A 1 (Note 2) VDS = VGS, ID = 250 A VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance 3.9 -8 5 ID = 250 A, Referenced to 25C 2 V VGS = 10 V, ID = 10.8 A VGS = 10 V,ID = 10.8 A, TJ=125C 8 13 12 21 ID(on) On-State Drain Current VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 10 V, ID = 10.8 A 36 S VDS = 20 V, f = 1.0 MHz V GS = 0 V, 1686 pF mV/C 22 m A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge 384 pF 185 pF (Note 2) VDD = 20 V, VGS = 10 V, VDS = 20 V, VGS = 10 V ID = 1 A, RGEN = 6 ID = 10.8 A, 12 22 ns 9 18 ns 30 48 ns 15 27 ns 29 41 nC 8.7 nC 8.0 nC FDS4480 Rev D1 (W) FDS4480 Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Typ Max Units Drain-Source Diode Characteristics and Maximum Ratings IS 0.7 trr Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 2.1 A (Note 2) Voltage Diode Reverse Recovery Time IF = 10.8 A, diF/dt = 100 A/s 27 nS Qrr Diode Reverse Recovery Charge 58 nC VSD 2.1 A 1.2 V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 50C/W when 2 mounted on a 1in pad of 2 oz copper b) 105C/W when 2 mounted on a .04 in pad of 2 oz copper c) 125C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDS4480 Rev D1 (W) FDS4480 Electrical Characteristics FDS4480 Typical Characteristics 80 VGS = 10V 2 6.0V 5.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 70 60 50 5.0V 40 30 4.5V 20 10 0 0 1 2 3 VGS = 5.0V 1.8 1.6 5.5V 1.4 6.0V 1.2 7.0V 0 20 40 60 80 I D, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 2 0.025 ID = 5.4A ID = 10.8A VGS = 10V 1.8 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 10V 0.8 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 1.6 1.4 1.2 1 0.8 0.6 0.4 0.022 0.019 o TA = 125 C 0.016 0.013 0.01 o TA = 25 C 0.007 -50 -25 0 25 50 75 100 125 150 4 175 5 o 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation withTemperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 o o VDS = 5V IS, REVERSE DRAIN CURRENT (A) 80 25 C TA = -55 C o ID, DRAIN CURRENT (A) 8.0V 1 125 C 60 40 20 VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 6 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS4480 Rev D1 (W) FDS4480 Typical Characteristics 2400 VGS, GATE-SOURCE VOLTAGE (V) 10 ID = 10.8A V D D = 15 V f = 1 MHz VGS = 0 V 2000 8 CAPACITANCE (pF) V D D = 20 V 6 V D D = 25 V 4 2 CISS 1600 1200 800 COSS 400 CRSS 0 0 0 8 16 32 24 0 10 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 40 50 1ms 10ms RDS(ON) LIMIT 10 P(pk), PEAK TRANSIENT POWER (W) 100s 100ms 1s 10s 1 DC VGS = 10V SINGLE PULSE RJA = 125oC/W 0.1 TA = 25oC 0.01 0.01 0.1 1 10 100 SINGLE PULSE RJA = 125C/W TA = 25C 40 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 t 1, TIME (sec) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 30 Figure 8. Capacitance Characteristics. 100 ID, DRAIN CURRENT (A) 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RJA(t) = r(t) * R JA 0.2 0.1 o RJA = 125 C/W 0.1 0.05 P(pk) 0.02 0.01 t1 t2 0.01 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. 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