\ SILICON NPN TRANSISTOR 28C 3199) EPITAXIAL PLANAR TYPE (PCT PROCESS) PAN AR @ Audio Amplifier Applications. ! | ! | : = AM Amplifier Applications. | : . O.S5MAX. {s) e High Current Capability : [-=150mA (Max. ). a _. t @ High DC Current Gain ! hys=70~700. in 8 Excellent her Linearity : hee(0. 1mA) /hye(2mA) =0. 95 (Typ. ). S 7 @ Low Noise ! NF=1dB(Typ.), 10dB (Max. ). | jt | e@ Low Nosise 2SA3199 NF=1dB(TYP), 10dB (Max). i |. EMITTER 2SA3199D NF=0.2dB(TYP), 3dB (Max.) 2. COLLECTOR Complementary to 2SA1267/2SA1267@. > Bast Small Package. - Hi MAXIMUM RATINGS (Ta=25U) CHARACTERISTIC SYMBOL] RATING |UNIT CHARACTERISTIC SYMBOL} RATING |UNIT Collector-Base Voltage V cao 50 V Emitter Current I, 150 mA Collector-Emitter Voltage | Veo 50 V_ || Collector Power Dissipation | Pe 200 | mW Emitter- Base Voltage V po 5 Vv Junction Temperature T; 125 C Collector Current Ic 150 mA | | Storge Temperature Range Tste -55-~125/ Mi ELECTRICAL CHARACTERISTICS (Ta=25T) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. |MA, UNIT. Collector Cut-off Current Topo Vee=50V, I.=0 | 0.1) way Emitter Cut-off Current | Lepo Vee=5V, 1-=0 _ 0.1 uA | DC Current Gain . hremotes Ver=6V, I=2mA 70 700 Collector-Emitter Saturation Voltage | Vensau I.=100mA, I,=10mA | 0.1 )0.25! V Transition Frequency ty Vee=l0V, I=lmA 80 _ | MHz Collector Output Capacitance . Cop Voe=10V, 1,=0, f=1MHz ~- | 2.0) 3.5 | pF Noise Figure - 25C3199 NF Vee=6V, 1-=0.1mA - 1 10 aB 2SC3199@) f=1kHz, Rg=10k0 0.2 3 W@ NOTE: According to hee: Classified as follows. 0 70~140 Y 120~240 GR 200-400 BL 350-700