2SK4063LS
No. A0397-1/5
Features
•Low ON-resistance, low input capacitance, ultrahigh-speed switching.
•High reliability (Adoption of HVP process).
•Attachment workability is good by Mica-less package.
•Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 500 V
Gate-to-Source Voltage VGSS ±30 V
Drain Current (DC) IDc*1 Limited only by maximum temperature 16 A
IDpack*2
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
11.5 A
Drain Current (Pulse) IDP 64 A
Allowable Power Dissipation PD2.0 W
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
40 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Avalanche Energy (Single Pulse) *4 EAS 798 mJ
Avalanche Current *5 IAV 16 A
*1 Shows chip capability
*2 Package limited
*3 SANYO
’
s condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4 VDD=99V, L=5mH, IAV=16A
*5 L≤5mH, single pulse
Marking : K4063
www.semiconductor-sanyo.com/network
Ordering number : ENA0397E
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
'
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
'
s products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
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consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
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O1007 TI IM TC-00000924 / 30707 TI IM TC-00000553 / 70306 MS IM TB-00002431 / 52506QB MS IM TB-00002329
O2208 MS IM TC-00001655 /
2SK4063LS N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
2SK4063LS
No. A0397-2/5
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 500 V
Zero-Gate Voltage Drain Current IDSS VDS=500V, VGS=0V 100 μA
Gate-to-Source Leakage Current IGSS VGS=±30V, VDS=0V ±100 nA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 3 5 V
Forward T ransfer Admittance ⏐yfs⏐VDS=10V, ID=8A 6 12 S
Static Drain-to-Source On-State Resistance
RDS(on) ID=8A, VGS=15V 0.3 0.39 Ω
Input Capacitance Ciss VDS=30V, f=1MHz 2150 pF
Output Capacitance Coss VDS=30V, f=1MHz 230 pF
Reverse T ransfer Capacitance Crss VDS=30V, f=1MHz 15 pF
VDS=5V, f=1MHz 31 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 55 ns
Rise T ime trSee specified Test Circuit. 170 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 63 ns
Fall T ime tfSee specified Test Circuit. 83 ns
Total Gate Charge Qg VDS=200V, VGS=10V, ID=16A 40 nC
Gate-to-Source Charge Qgs VDS=200V, VGS=10V, ID=16A 15.2 nC
Gate-to-Drain “Miller” Charge Qgd VDS=200V, VGS=10V, ID=16A 15.2 nC
Diode Forward Voltage VSD IS=16A, VGS=0V 0.95 1.2 V
Package Dimensions
unit : mm (typ)
7509-002
Switching Time Test Circuit Avalanche Resistance Test Circuit
16.0
14.0
3.6
3.5
7.2
16.1
0.7
2.55 2.55
2.4
1.2
0.9
0.75
0.6
1.2
4.5 2.8
123
10.0 3.2
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI(LS)
PW=10μs
D.C.≤0.5%
P.G RGS=50Ω
G
S
D
ID=8A
RL=25Ω
VDD=200V
VOUT
2SK4063LS
VIN
10V
0V
VIN
50Ω
≥50Ω
RG
VDD
L
15V
0V
2SK4063LS
2SK4063LS
No. A0397-3/5
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Case Temperature, Tc -- °C
Drain Current, ID -- A
Forward T ransfer Admittance, ⏐yfs⏐ -- S
Diode Forward Voltage, VSD -- V
Source Current, IS -- A
Gate-to-Source Voltage, VGS -- V
ID -- VDS ID -- VGS
RDS(on) -- VGS RDS(on) -- Tc
IS -- VSD
⏐yfs⏐ -- ID
Drain Current, ID -- A
Switching Time, SW Time -- ns
SW Time -- ID
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- VDS
IT10981 IT10982
IT10983 IT10984
--50 --25 0 25 50 75 100 125 150
0
0
50
40
45
30
20
5252010 15
10
35
25
15
5
0
50
40
45
30
20
10
35
25
15
5
01514311195741221068 13
8V
10V
0
1.2
0.4
0.8
1.0
0.6
0.2
Tc=25°CVDS=20V
VGS=5V
6V
IT10986
0.2 0.4 0.6 0.8 1.41.21.0
0.01
0.1
7
5
3
2
2
1.0
7
5
3
2
10
7
5
3
2
5
3
IT10985
25
°
C
--25
°
C
Tc=75
°
C
0.1 23 57
1.0 23 5 23 5710
1.0
10
2
3
5
7
5
7
3
2
3
VDS=10V
Tc= --25
°
C
75
°
C
VGS=0V
25°C
Tc= --25°C
75°C
3
0
1.6
1.2
1.4
1.0
0.6
0.8
151359711
0.4
0.2
ID=8A
Tc=75°C
25°C
--25°C
IT10987
100
3
2
5
7
1000
3
2
5
7
0.1 1.0
23 57 23 5 10 23 57
VDD=200V
VGS=10V
td(off)
tr
tf
td(on)
0
7
100
10
5
3
2
2
7
1000
7
5
3
2
5
3
305 15202510
IT10988
f=1MHz
Ciss
Coss
Crss
ID=8A, VGS=
15
V
25
°
C
Ciss, Coss, Crss -- pF
15V
2SK4063LS
No. A0397-4/5
Total Gate Charge, Qg -- nC
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Ambient Temperature, Ta -- °C
Allowable Power Dissipation, PD -- W
A S O
VGS -- Qg
PD -- Ta
IT10979
0
020 40
1.0
0.5
60
2.0
1.5
80 100 120
2.5
140 160
0
025 50 75 100 125 150
100
80
60
20
40
120
175
EAS -- Ta
Avalanche Energy derating factor -- %
IT10478
Ambient Temperature, Ta -- °C
IT10989
0
0
1
2
3
4
5
6
7
8
40
10
9
10 20 30
VDS=200V
ID=16A
2
3
5
7
2
0.1
3
5
7
2
1.0
3
5
7
2
10
3
5
7
2
100
0.01 2 3 57 2 3 57 2 3 57 2 3 57
0.1 1.0 10 100 1000
IT10990
PW≤10μs
Operation in this area
is limited by RDS(on).
10
μ
s
100μs
1ms
10ms
100ms
IDc(*1)=16A
IDP=64A
DC operation
IDpack(*2)=11.5A
Tc=25°C
Single pulse *1. Shows chip capability
*2.
SANYO’s ideal heat dissipation condition
Case Temperature, Tc -- °C
Allowable Power Dissipation, PD -- W
PD -- Tc
0
020 40
10
60
20
80 100 120
30
40
50
140 160
IT10980
2SK4063LS
No. A0397-5/5
PS
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
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party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
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Note on usage : Since the 2SK4063LS is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
This catalog provides information as of October, 2008. Specifications and information herein are subject
to change without notice.
