2SK4063LS Ordering number : ENA0397E N-Channel Silicon MOSFET 2SK4063LS General-Purpose Switching Device Applications Features * * * * Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Symbol Conditions VDSS VGSS Drain Current (DC) IDc*1 IDpack*2 Drain Current (Pulse) IDP Limited only by maximum temperature Tc=25C (SANYO's ideal heat dissipation condition)*3 Ratings Unit 500 V 30 V 16 A 11.5 A 64 A 2.0 W Allowable Power Dissipation PD 40 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Energy (Single Pulse) *4 EAS IAV 798 mJ 16 A Avalanche Current *5 Tc=25C (SANYO's ideal heat dissipation condition)*3 *1 Shows chip capability *2 Package limited *3 SANYO's condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=99V, L=5mH, IAV=16A *5 L5mH, single pulse Marking : K4063 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network O1007 TI IM TC-00000924 / 30707 TI IM TC-00000553 / 70306 MS IM TB-00002431 / 52506QB MS IM TB-00002329 No. A0397-1/5 O2208 MS IM TC-00001655 / 2SK4063LS Electrical Characteristics at Ta=25C Parameter Symbol Drain-to-Source Breakdown Voltage Ratings Conditions Zero-Gate Voltage Drain Current V(BR)DSS IDSS ID=1mA, VGS=0V VDS=500V, VGS=0V Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=30V, VDS=0V VDS=10V, ID=1mA Forward Transfer Admittance Static Drain-to-Source On-State Resistance yfs RDS(on) VDS=10V, ID=8A ID=8A, VGS=15V Input Capacitance Ciss Output Capacitance Coss VDS=30V, f=1MHz VDS=30V, f=1MHz Reverse Transfer Capacitance Crss Turn-ON Delay Time min typ Unit max 500 V 100 A 100 nA 5 V 0.39 3 6 12 S 0.3 2150 pF 230 pF 15 pF 31 pF td(on) VDS=30V, f=1MHz VDS=5V, f=1MHz See specified Test Circuit. 55 ns Rise Time tr See specified Test Circuit. 170 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 63 ns Fall Time tf See specified Test Circuit. 83 ns Total Gate Charge Qg 40 nC Gate-to-Source Charge Qgs VDS=200V, VGS=10V, ID=16A VDS=200V, VGS=10V, ID=16A Gate-to-Drain "Miller" Charge Qgd Diode Forward Voltage VSD VDS=200V, VGS=10V, ID=16A IS=16A, VGS=0V 15.2 nC 15.2 nC 0.95 1.2 V Package Dimensions unit : mm (typ) 7509-002 4.5 10.0 2.8 0.6 16.1 16.0 7.2 3.5 3.2 1.2 14.0 3.6 0.9 1.2 0.75 0.7 1 : Gate 2 : Drain 3 : Source 2.4 1 2 3 2.55 SANYO : TO-220FI(LS) 2.55 Switching Time Test Circuit VIN Avalanche Resistance Test Circuit L VDD=200V 10V 0V 50 RG ID=8A RL=25 VIN VOUT D PW=10s D.C.0.5% 2SK4063LS 15V 0V 50 VDD G S P.G 2SK4063LS RGS=50 No. A0397-2/5 2SK4063LS ID -- VDS 10V 45 VDS=20V 15V 45 8V 40 Drain Current, ID -- A 40 Drain Current, ID -- A ID -- VGS 50 35 30 25 20 6V 15 25C C Tc=25C Tc= --2 5 50 75C 35 30 25 20 15 10 10 5 5 VGS=5V 0 5 0 10 15 0 20 0 25 Drain-to-Source Voltage, VDS -- V 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 1.6 1 IT10981 IT10982 RDS(on) -- Tc 1.2 1.2 1.0 0.8 0.6 Tc=75C 0.4 25C 0.2 --25C 9 11 13 Gate-to-Source Voltage, VGS -- V Source Current, IS -- A Forward Transfer Admittance, yfs -- S = Tc 3 C 5 --2 C 5 7 2 1.0 7 3 5 7 1.0 2 3 5 7 10 2 Drain Current, ID -- A 3 100 125 150 IT10984 3 2 1.0 7 5 3 2 0.1 7 5 0.4 0.6 0.8 1.0 1.2 Diode Forward Voltage, VSD -- V 1.4 IT10986 Ciss, Coss, Crss -- VDS 7 5 f=1MHz 3 5 Ciss Ciss, Coss, Crss -- pF 2 3 2 td (off) 100 7 tr td(on) tf 5 1000 7 5 Coss 3 2 100 7 5 3 Crss 2 3 2 0.1 75 10 7 5 IT10985 VDD=200V VGS=10V 7 50 IS -- VSD 0.01 0.2 5 SW Time -- ID 1000 25 VGS=0V 3 2 5 2 0 Case Temperature, Tc -- C 3 2 7 5 --25 5 C 25 10 0.2 IT10983 VDS=10V 2 3 0.1 Switching Time, SW Time -- ns 15 yfs -- ID 3 0.4 25C 7 5V =1 S VG A, =8 ID 0.6 Tc=7 5C 5 0.8 0 --50 0 3 1.0 --25C 1.4 Static Drain-to-Source On-State Resistance, RDS(on) -- Static Drain-to-Source On-State Resistance, RDS(on) -- ID=8A 10 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 IT10987 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT10988 No. A0397-3/5 2SK4063LS VGS -- Qg 10 8 7 6 5 4 3 1 0 10 20 30 40 Total Gate Charge, Qg -- nC 1.0 7 5 3 2 2.0 1.5 1.0 0.5 PW10s 10 0 s s 10 Operation in this area is limited by RDS(on). *1. Shows chip capability *2. SANYO's ideal heat dissipation condition 2 3 5 7 10 2 3 5 7 100 2 3 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W IDpack(*2)=11.5A 5 71000 IT10990 PD -- Tc 50 40 30 20 10 0 0 0 20 40 80 60 100 120 140 Ambient Temperature, Ta -- C 160 IT10979 0 20 40 60 80 100 120 Case Temperature, Tc -- C 140 160 IT10980 EAS -- Ta 120 Avalanche Energy derating factor -- % 10 7 5 3 2 IT10989 PD -- Ta 2.5 1m s 1 10 0m 0m s DC s op era tio n IDc(*1)=16A 0.1 7 5 3 Tc=25C 2 Single pulse 0.01 0.1 2 3 5 7 1.0 2 0 IDP=64A 100 7 5 3 2 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 ASO 2 VDS=200V ID=16A 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- C 150 175 IT10478 No. A0397-4/5 2SK4063LS Note on usage : Since the 2SK4063LS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of October, 2008. Specifications and information herein are subject to change without notice. PS No. A0397-5/5