KST-9066-000 1
BF423
PNP Silicon Transistor
Descriptions
• High voltage application
•
••
• Monitor equipment application
Features
• Collector-Emi tter v oltage : VCEO=-250V
• Complementary pair with BF422
Ordering Information
Type NO. Marking Package Code
BF423 BF423 TO-92
Outline Dimensions unit :
mm
S
Se
em
mi
ic
co
on
nd
du
uc
ct
to
or
r
4.5±0.1
4.5±0.1
0.4±0.02
1.27 Typ.
2.54 Typ.
1 2 3
3.45±0.1
2.25±0.1
2.06±0.1
1.20±0.1
0.38
PIN Conne cti ons
1. Emitter
2. Collector
3. Bas e
KST-9066-000 2
BF423
Absolute maximum ratings
Characteristic Symbol Ratings Unit
Collector-Base voltage VCBO -250 V
Collector-Emitter voltage VCEO -250 V
Emitter-base VEBO -5 V
Collector current IC-100 mA
Collector dissipation PC625 mW
Junction temperature Tj150 °C
Storage temperature Tstg -55~150 °C
Electrical Characteristics
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Collector - Emitter breakdown voltage BVCEO IC=-1mA, IB=0 -250 - - V
Collector cut-off current ICBO VCB=-200V, IE=0 - - -100 nA
Emitter c ut-off c urrent IEBO VEB=-5V, IC=0 - - -100 nA
DC current gain hFE VCE=-20V, IC=-25mA 50 - - -
Collec tor -Emitter s a turation voltage VCE(sat) IC=-30mA, IB=-5mA - - -0.6 V
Transistor frequency fTVCE=-20V, IC=-10mA,
f=100MHz - 100 - MHz
Collec tor output capac itance Cob VCB=-20V, IE=0, f=1MHz -1 -pF
