Product Summary
Part Number BVDSS RDS(on) ID
IRFY130CM 100V 0.18Ω14.4A
Provisional Data Sheet No. PD 9.1286C
HEXFET
®
POWER MOSFET
HEXFET technology is the key to International Rectifier’ s
advanced line of power MOSFET transistors . The effi-
cient geometry design achieves very low on-state re-
sistance combined with high transconductance.
HEXFET transistors also feature all of the well-estab-
lished advantages of MOSFETs, such as voltage con-
trol, very fast switching, ease of paralleling and electri-
cal parameter temperature stability. They are well-suited
for applications such as switching power supplies, mo-
tor controls, inverters, choppers, audio amplifiers, high
energy pulse circuits, and virtually any application where
high reliability is required.
The HEXFET transistor’s totally isolated package elimi-
nates the need for additional isolating material between
the device and the heatsink. This improves thermal effi-
ciency and reduces drain capacitance.
IRFY130CM
Features
nHermetically sealed
nElectrically isolated
nSimple drive requirements
nEase of paralleling
nCeramic eyelets
N-CHANNEL
100 Volt, 0.18Ω HEXFET
Absolute Maximum Ratings
Parameter IRFY130CM Units
ID @ VGS=10V, TC = 25°C Continuous Drain Current 14.4
ID @ VGS=10V, TC = 100°C Continuous Drain Current 9.1 A
IDM Pulsed Drain Current 57.6
PD @ TC = 25°C Max. Pow er Dissipation 7 5 W
Linear Der ating F actor 0.6 W/K
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalance Energy 69 mJ
IAR A v alance Current 14.4 A
EAR Repetitive Avalanche Energy 7.5 mJ
dv/dt P eak Diode Recove ry dv/dt 5.5 V/ns
TJOperating Junction -55 to 150
Tstg Stor age Temperature Range °C
Lead Temperature 300 (0.063 in (1.6mm) from case for 10 sec)
Weight 4.3(typical) g
*ID current limited by pin diameter
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdo wn V oltage 10 0 — — V VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJTemperature Coefficient of Breakdo wn — 0.1 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source — — 0.18 VGS = 10V, ID = 9.1A
On-State Resistance — — 0.21 ΩVGS = 10V, ID = 14.4A
VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 250µA
gfs Forward T ransconductance 3.0 — — S ( )V
DS ≥ 15V, IDS = 9.1A
IDSS Zero Gate Voltage Drain Current — — 25
V
DS
= 0.8 x max. rating,V
GS
= 0V
— — 250 VDS = 0.8 x max. rating
VGS = 0V, TJ = 25°C
IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V
IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V
QgT otal Gate Charge 12.8 — 28.5 VGS = 10V, ID = 14.4A
Qgs Gate-to-Source Charge 1.0 — 6.3 VDS = Max. Rating x 0.5
Qgd Gate-to-Drain (‘Miller’) Charge 3.8 — 16.6 see figures 6 and 13
td(on) Turn-On Dela y Time — — 30 VDD = 50V, I D=14.4A, RG=7.5Ω
tr Rise Time — — 75 VGS = 10V
td(off) Turn-Off Delay Time — — 40
tfF all Time — — 45 see figure 10
LDInternal Drain Inductance — 8.7 —
LSInternal Source Inductance — 8.7 —
Ciss Input Capacitance — 65 0 — VGS = 0v, VDS = 25V
Coss Output Capacitance — 240 — p F f = 1.0MHz. (Figure 5)
Crss Reverse T ransfer Capacitance — 4 4 —
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case — — 1.67
RthJA Junction-to-Ambient — — 80 K/WTypical socket mount
RthCS Case-to-Sink — 0.21 — Mounting surface flat, smooth
Ω
µA
nC
nH
ns
Measured from the drain
lead, 6mm (0.25 in.) from
package to center of die.
Measured from the
source lead, 6mm (0.25
in.) from package to
source bonding pad.
Modified MOSFET symbol
showing the interna l
inductances.
nA
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max
Units
Test Conditions
ISContinuous Source Current (Body Diode) — — 14.4
ISM Pulse Source Current (Body Diode) — — 57.6
VSD Diode F orw ard Voltage — — 1.5 V Tj = 25°C, IS = 14.4A, VGS = 0V
trr Re v erse Recov ery Time — — 3 0 0 ns Tj = 25°C, IF = 14.4A, di/dt ≤ 100 A/µs
QRR Reverse Recovery Charge — — 3.0 µ C VDD ≤ 50 V
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
IRFY130CM Device
Modified MOSFET symbol showing the
integral reverse p-n junction rectifier.
A
Fig. 5 — Typical Capacitance Vs. Drain-to-Source
Voltage Fig. 6 — Typical Gate Charg e Vs. Gate-to-Sourc e
Voltage
Fig. 3 — Typical Transfer Characteristics Fig. 4 — Normalized On-Resistance Vs. Temperature
Fig. 1 — Typical Output Characteristics
TC = 25°C
IRFY130CM Device
Fig. 2 — Typical Output Characteristics
TC = 150°C
Fig. 10a — Switching Time Test Circuit Fig. 10b — Switching Time Waveforms
Fig. 9 — Maximum Drain Current Vs. Case Temperature
Fig. 7 — Typical Source-to-Drain Diode Forward
Voltage Fig. 8 — Maximum Safe Operating Area
IRFY130CM Device
1
10
100
1000
1 10 100 1000
V , Drain-to-Source Voltage (V)
DS
I , Dra in C ur re nt (A)
OPER AT ION IN TH IS AR EA LIM ITED
BY R
D
DS(on)
T = 2 5°C
T = 1 50 °C
Single Pulse
C
J
100µs
1ms
10ms
A
3
0
C
0
3
6
9
12
15
25 50 75 100 125 150
C
I , D r ain C u rren t (Amps )
D
T , Cas e Te m p era tu r e (°C )
A
Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration
Fig. 12c — Max. Avalanche Energ y vs . Current
tp
V
(BR)DSS
I
AS
Fig. 12a — Unclamped Inductive Test Circuit Fig. 12b — Unclamped Inductive Waveforms
RG
IAS
0.01
Ω
tp
D.U.T
L
VDS
+
-VDD
DRIVER
A
Fig. 13a — Gate Charge T est Circuit
IRFY130CM Device
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
t , Recta ngular Pulse Duration (sec)
1
thJC
D = 0.5 0
0.01
0.02
0.05
0.10
0.20
SIN GLE PU LSE
(THERMAL RESPONS E)
A
Therm al R esponse (Z )
0
20
40
60
80
25 50 75 100 125 150 175
J
E , Sing le P u lse Av alan che E n e rgy ( m J)
AS
A
Starting T , Ju nctio n T e m p eratu re (°C )
V = 25 V
I = 25A
DD
D
3
0
C
Fig. 13b — Basic Gate Charge Waveform
Case Outline and Dimensions — TO-257AA
NOTES:
1. Dimensioning and tolerancing per ANSI Y14.5M-1982
2. Controlling dimension: Inch
3. Dimensions are shown in millimeters (Inches)
4. Outline conforms to JEDEC outline TO-257AA
Pin 1 - Drain
Pin 2 - Source
Pin 3 - Gate
123
TO-257AA
NON-STANDARD PIN CONFIGURATION
Pin 1 - Gate
Pin 2 - Drain
Pin 3 - Source
Order Part Type IRFY130C
CAUTION
BERYLLIA W ARNING PER MIL-PRF-19500
P ackages containing beryllia shall not be ground, sandblasted,
machined or have other operations performed on them which
will produce beryllia or beryllium dust. Furthermore, beryllium
oxide packages shall not be placed in acids that will produce
fumes containing beryllium.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44(0) 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 6/96
IRFY130CM Device
Repetitive Rating; Pulse width limited by maximum junc-
tion temperature (see figure 11).
@ VDD = 50V, Starting TJ = 25°C,
EAS = [0.5 * L * ( ) * [BVDSS/(BVDSS-VDD)]
Peak IL = 14.4A, VGS = 10V, 25 ≤ RG ≤ 200Ω (figure 12)
ISD ≤ 14.4A, di/dt ≤ 140A/µs, VDD ≤ BVDSS, TJ ≤ 150°C
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
K/W = °C/W W/K = W/°C
Notes:
