2SC3138
2003-03-27
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TO SHIBA T r ansistor Silicon NPN Triple D iffused Ty pe (PCT process)
2SC3138
High Volta ge Switching Applica tions
· High voltage: VCBO = 200 V (max)
V
CEO = 200 V (max)
· Small flat package
· Complementary to 2SA1255
Maximum Ratings (Ta =
==
= 25°C)
Characteristics Symbol Rating Unit
Collect or-base voltage VCBO 200 V
Collect or-emitter voltage VCEO 200 V
Emitter-base voltage VEBO 5 V
Collector current IC 50 mA
Base current IB 20 mA
Collect or power diss i pation PC 150 mW
Junction temperature Tj 125 °C
Storage temperature range Tstg -55~125 °C
Marking
Unit: mm
JEDEC TO-236MOD
JEITA SC-59
TOSHIBA 2-3F1A
Weight: 0.012 g (typ.)
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Electrical Characteristics (Ta =
==
= 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO V
CB = 200 V, IE = 0 ¾ ¾ 0.1 mA
Emitte r cut-off current IEBO V
EB = 5 V, IC = 0 ¾ ¾ 0.1 mA
Collect or-base breakdown voltage V (BR) CBO IC = 0.1 mA, IE = 0 200 ¾ ¾ V
Collect or-em it t er breakdown voltage V (BR) CEO IC = 1 mA, IB = 0 200 ¾ ¾ V
DC current gain hFE
(Note) VCE = 3 V, IC = 10 mA 70 ¾ 240
Collect or-em it t e r saturati on vol tage VCE (sat) I
C = 10 mA, IB = 1 mA ¾ 0.1 0.5 V
Base-emitter saturation voltage VBE (sat) I
C = 10 mA, IB = 1 mA ¾ 0.75 1.5 V
Transiti on frequenc y fT V
CE = 10 V, IC = 2 mA 50 100 ¾ MHz
Collect or output capaci t ance Cob V
CB = 10 V, IE = 0, f = 1 MHz ¾ 2 4 pF
Turn-on time ton ¾ 0.3 ¾
Storage time tstg ¾ 2 ¾
Switchin g time
Fall time tf
VCC = 50 V, IC = 6 mA,
IB1 = -IB2 = 0.6 mA ,
pulse width = 5 ms, duty cycle
<
=
2% ¾ 0.4 ¾
ms
Note: hFE classification O: 70~140, Y: 120~240
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000707EA
A
RESTRICTIONS O N PRODUCT USE
