en ae ee ACT-S512K8 | High Speed 4 Megabit Monolithic SRAM Features m= Low Power Monolithic CMOS 512K x 8 SRAM = Full Military (-55C to +125C) Temperature Range = Input and Output TTL Compatible Design g Fast 17,20,25,35,45 & 55ns Maximum Access Times m= +5 V Power Supply = MIL-PRF-38534 Compliant MCMs Available = Industry Standard Pinouts m= Packaging Hermetic Ceramic e 36 Lead, .92" x .51"' x .13" Flat Package (FP), Aeroflex code# "F3" e 36 Lead, .92" x .43" x .184" Small Outline J lead (CSOJ), Aeroflex code# "F4" (.155 MAX thickness available, contact factory for details) e 32 Lead, 1.6" x .60" x .20" Dual-in-line (DIP), Aeroflex code# "P4" m DESC SMD# 5962-95613 Released(F3,F4,P4) Block Diagram Flat Package(F3,F16), DIP(P4) & CSOJ(F4) CE AO A18 7 | 512Kx8 { 1/O0-7 Pin Description 1/Oo-7 Data I/O Ao-18 Address Inputs WE Write Enable CE Chip Enable OE Output Enable Vcc Power Supply Vss Ground NC Not Connected (\EROFLEX CIRCUIT TECHNOLOGY www.aeroflex.com General Description The ACT-S512K8 is a high speed, 4 Megabit CMOS Monolithic SRAM designed for full temperature range military, space, or high reliability mass memory and_ fast cache applications. The MCM is input and output TTL compatible. Writing is executed when the write enable (WE) and chip enable (CE) inputs are low and output enable (OE) is high. Reading is accomplished when WE is high and CE and OE are both low. Access time grades of 17ns, 20ns, 25ns, 35ns, 45ns and 55ns maximum are standard. The +5 Volt power supply version is standard and +3.3 Volt lower power model is a future optional product. The products are designed for operation over the temperature range of -55C to +125C and under the full military environment. A DESC Standard Military Drawing (SMD) number is released. The ACT-S512K8 is manufactured in Aeroflexs 80,000 square foot MIL-PRF-38534 certified facility in Plainview, N.Y. (Q\eroflex Circuit Technology - Advanced Multichip Modules SCD1664 REV B 9/25/98Absolute Maximum Ratings Symbol Parameter MINIMUM MAXIMUM Units To Case Operating Temp. -55 +125 C Tste Storage Temperature -65 +150 C Pp Maximum Package Power Dissipation - 1.4 Ww Ve Maximum Signal Voltage to Ground -0.5 Veco + 0.5 Vv Voc Power Supply Voltage -0.5 +7.0 V Ty Junction Temperature - +150 C Recommended Operating Conditions Symbol Parameter Minimum Maximum Units Voc Power Supply Voltage +4.5 +5.5 Vv Vin Input High Voltage +2.2 Voc + 0.3 Vv Vit Input Low Voltage -0.5 +0.8 Vv Ta Operating Temp. (Mil) -55 +125 C Truth Table Mode CE | OE | WE Data I/O Power Standby H x x High Z Standby (deselect/power down) Read L L H Data OUT Active Output Disable L H H High Z Active (deselected) Write L x L Data IN Active Capacitance (Vin = OV, f = 1MHz, Tc = 25C, unless otherwise noted, Guaranteed but not tested) Symbol Parameter Maximum Units Cin Input Capacitance (Ap.1g, WE & OE) 20 pF Cout Output Capacitance (I/O9.7 & CE) 20 pF DC Characteristics (Vcc = 5.0V, Vss = OV, Tc = -55C to +125C, unless otherwise specified) Parameter Sym Conditions On Mex Units Input Leakage Current Lt | Veg = Max, Vin = 0 to Voc -10 +10 | PA Output Leakage Current lLlo | CE = Viy, OE = Vin, Vout = 0 to Voc -10 | +10 | PA San Cre 0 eee | | Output Low Voltage Vo | lo. = 8 mA, Vee = 4.5V - 0.4 Vv Output High Voltage Vou | low = -4 mA, Vec = 4.5V 2.4 - Vv Aeroflex Circuit Technology 2 SCD1664 REV B 9/25/98 Plainview NY (516) 694-6700AC Characteristics (Vcc = 5.0V, Vss= OV, Tc= -55C to +125C) Read Cycle Parameter sym 01 7 020 025 035 045 055 Units Min Max|Min Max|Min Max|Min Max|Min Max|Min Max Read Cycle Time tac | 17] - | 20] - | 25] - | 35] - | 45] - | 55] - ns Address Access Time tana | - | 17] - | 20] - | 25] - | 35] - | 45] - | 55 ns Chip Select Access Time tacs} - | 17] - | 20] - | 257 - | 35] - | 457 - | 55 ns Output Hold from Address Change tou | 0 - 0 - 0 - 0 - 0 - 0 - ns Output Enable to Output Valid lop} - 9 - | 10} - | 12] - | 25 25 25 ns Chip Select to Output in Low Z (1) terz| 2 - 2 - 2 - 4 - 4 - 4 - ns Output Enable to Output inLowZ(1) | to.z] Of - | Of - | OF -}] OF - J OF - J] OF - ns Chip Deselect to Output in High Z (1) | teuxz] - | 9] - | 10] - | 12] - | 15) - | 20] - | 20 ns Output Disable to Output in High Z (1) ] tonz] - | 9] - | 10] - | 12] - 7 15) - | 20] - | 20 ns Note 1. Guaranteed by design, but not tested Write Cycle Parameter Sym 01 7 020 025 ~035 ~045 055 Units Min Max}Min Max|Min Max|Min Max] Min Max |Min Max Write Cycle Time two] 17] - | 20] - | 25] - | 357 - | 45] - | 55] - ns Chip Select to End of Write tow] 15] - | 15] - | 20] - | 25] - | 35] - | 50] - ns Address Valid to End of Write taw] 15] - | 15) - | 20] - | 257 - | 35] - | 50] - ns Data Valid to End of Write tow] 12] - | 12] - | 15] - | 20] - | 25] - | 25] - ns Write Pulse Width twe | 14] - | 14] - | 15] - | 25] - | 35] - | 40] - ns Address Setup Time tas | 2 - 2 - 2 - 2 - 2 - 2 - ns Address Hold Time tay | O - 0 - 0 - 0 - 5 - 5 - ns Output Active from End of Write (1) tow] Of - | OF - | 0 0 5] -] 57] - ns Write to Output in High Z (1) twuz] - | 9] - | 97 - | 10] - | 157 - | 20] - | 25 ns Data Hold from Write Time tpy | 0 - 0 - 0 - 0 - 0 - 0 - ns Note 1. Guaranteed by design, but not tested Data Retention Electrical Characteristics (Special Order Only) (Te = -55C to +125C) ALL SPEEDS Parameter Sym Test Conditions . Units Min Typ Max Vec for Data Retention Vor CE = Voc 0.2V 2 - 5.5 V Data Retention Current (1)| lccprt Voc = 3V - 0.5 7.0 mA Available in Low Power version. Call For Information. Truth Table Mode CE OE WE Data I/O Power Standby H x x High Z Standby (deselect/power down) Read L L H Data Out Active Output Disable L H H High Z Active (deselected) Write L x L Data In Active Aeroflex Circuit Technology $CD1664 REV B 9/25/98 Plainview NY (516) 694-6700Timing Diagrams Read Cycle Timing Diagrams Write Cycle Timing Diagrams Read Cycle 1 (CE = OE = VIL, WE = VIH) Write Cycle 1 (WE Controlled, OE = VIL) tre twco \ K Ao-18 * Ao-16 K y Dvo Previous Data Valid Data Valid twHz SEE NOTE Duo | Data Valid Read Cycle 2 (WE = VIH) | . Ze z= tro Write Cycle 2 (CE Controlled, OE = VIH ) Ao-18 K S| two tAA Ao-18 K x CE tacs TCHZ tclz SEE NOTE __ SEE NOTE OE twP > tOHZ > We toe SEE NOTE WE \ / toLz>| SEE NOTE Duo High Z , Data Valid / tpw>| tDH Duo Data Valid UNDEFINED [| DONT CARE Note: Guaranteed by design, but not tested. AC Test Circuit Current Source | lot Parameter Typical Units | Input Pulse Level 0-3.0 Vv To Device Under Test Vz ~ 1.5 V (Bipolar Supply) c Input Rise and Fall 5 ns L= 50 pF tL Input and Output Timing Reference Level 1.5 Vv lou Current Source Notes: 1) Vz is programmable from -2V to +7V. 2) IOL and IOH programmable from 0 to 16 mA. 3) Tester Impedance ZO = 75Q. 4) VZ is typically the midpoint of VOH and VoL. 5) IOL and IOH are adjusted to simulate a typical resistance load circuit. 6) ATE Tester includes jig capacitance. Aeroflex Circuit Technology $CD1664 REV B 9/25/98 Plainview NY (516) 694-6700Pin Numbers & Functions 36 Pins Flat Package Pin # Function Pin # Function 1 Ao 19 NC At 20 A10 3 A2 21 Ait 4 A3 22 A12 5 A4 23 A13 6 CE 24 Ai4 7 /Oo 25 1/04 8 O14 26 1/05 i] Vcc 27 Vec 10 Vss 28 Vss 11 1/02 29 1/06 12 1/03 30 1/07 13 WE 31 OE 14 Ad 32 A15 15 A6 33 A16 16 A7 34 A17 17 As 35 A18 18 Ag 36 NC Package Outline "F3" Small Flat Package, 36 Leads .930 MAX I 1 ___ CK 1- .125 MAX 515 MAX iii fo Pin 1~ \_pin 18 -350 MIN .005 +.002 017, .850 REF >} (17 Spaves at .050) 2 sides All dimensions in inches Aeroflex Circuit Technology $CD1664 REV B 9/25/98 Plainview NY (516) 694-6700Pin Numbers & Functions 36 Pins CSOJ Ao 19 At 20 A2 21 A3 22 A4 23 CE 24 25 26 27 28 29 30 31 32 33 34 35 36 1 2 3 4 5 6 7 8 9 Package Outline "F4" .435" x .920" CSOuJ, 36 Pins | .930 | MAX All dimensions in inches Pn 1 AOD OG 050 | -+|-.017 +..002 TYP .850 TYP *_155 MAX thickness available, contact factory for details Aeroflex Circuit Technology $CD1664 REV B 9/25/98 Plainview NY (516) 694-6700Pin Numbers & Functions 32 Pins DIP A18 17 A16 18 A14 19 A12 20 A7 21 A6 22 Ad 23 A4 24 A3 25 A2 26 Al 27 Ao 28 29 30 31 32 1 2 3 4 5 6 7 8 9 Package Outline "P4" .590" x 1.67" DIP Package, 32 Leads 1.623 MAX Pin 32 GD) oo) od) nd) ed dd dd [a a | MAX 604 Pin 1 MAX Identifier { _ Fy 199 055 }- 920 .060 _ 012 -}- 199 4 L 045 }- 920 040 425 008 610 TYP TYP MIN "590 All dimensions in inches Aeroflex Circuit Technology $CD1664 REV B 9/25/98 Plainview NY (516) 694-6700(.\EROFLEX CIRCUIT TECHNOLOGY Ordering Information Model Number DESC Part Number Speed Package ACT-S512K8N017F3Q 5962-9561310HUC 17ns 36 Lead Flat ACT-S512K8N020F3Q 5962-9561309HUC 20ns 36 Lead Flat ACT-S512K8N025F3Q 5962-9561308HUC 25ns 36 Lead Flat ACT-S512K8N035F3Q 5962-9561307HUC 35ns 36 Lead Flat ACT-S512K8N045F3Q 5962-9561306HUC 45ns 36 Lead Flat ACT-S512K8N055F3Q 5962-9561305HUC 55ns 36 Lead Flat ACT-S512K8N017P4Q 5962-9561310HYC 17ns 32 Pin DIP ACT-S512K8N020P4Q 5962-9561309HYC 20ns 32 Pin DIP ACT-S512K8N025P4Q 5962-9561308HYC 25ns 32 Pin DIP ACT-S512K8N035P4Q 5962-9561307HYC 35ns 32 Pin DIP ACT-S512K8N045P4Q 5962-9561306HYC 45ns 32 Pin DIP ACT-S512K8N055P4Q 5962-9561305HYC 55ns 32 Pin DIP ACT-S512K8N017F4Q 5962-9561310HZC 17ns 36 Lead CSOJ ACT-S512K8N020F4Q 5962-9561309HZC 20ns 36 Lead CSOJ ACT-S512K8N025F4Q 5962-9561308HZC 25ns 36 Lead CSOJ ACT-S512K8N035F4Q 5962-9561307HZC 35ns 36 Lead CSOJ ACT-S512K8N045F4Q 5962-9561306HZC 45ns 36 Lead CSOJ ACT-S512K8N055F4Q 5962-9561305HZC 55ns 36 Lead CSOJ * Pending Aeroflex Circuit Technology Memory Type S = SRAM Memory Depth Model Number Breakdown ACT- S 512K 8 N- 020 F4 Q ll Memory Wiath, Bits Pinout Options N = None Memory Speed, ns Specification subject to change without notice Screening C =Commercial Temp, 0C to +70C | = Industrial Temp, -40C to +85C T = Military Temp, -55C to +125C M = Military Temp, -55C to +125C, Screening * Q = MIL-PRF-38534 Compliant/SMD if applicable Package Type & Size Surface Mount Packages Thru-Hole Packages F3 = 36 Pin FP P4 = 32 Pin DIP F4 = 36 Pin CSOJ * Screened to the individual test methods of MIL-STD-883 Aeroflex Circuit Technology 35 South Service Road Plainview New York 11830 Telephone: (516) 694-6700 FAX: (516) 694-6715 Toll Free Inquiries: 1-(800) 843-1553 Aeroflex Circuit Technology SCD1664 REV B 9/25/98 Plainview NY (516) 694-6700