AOK20B65M1/AOT20B65M1/AOB20B65M1
650V, 20A Alpha IGBT
TM
With soft and fast recovery anti-parallel diode
General Description Product Summary
V
CE
I
C
(T
C
=100°C) 20A
V
CE(sat)
(T
J
=25°C) 1.7V
Applications
• Latest Alpha IGBT (α IGBT) technology
• 650V breakdown voltage
• Very fast and soft recovery freewheeling diode
• High efficient turn-on di/dt controllability
• Low V
CE(sat)
enables high efficiencies
• Low turn-off switching loss and softness
• Very good EMI behavior
• High short-circuit ruggedness
650V
• Motor Drives
• Sewing Machines
• Home Appliances
• Fan, Pumps, Vacuum Cleaner
• Other Hard Switching Applications
G
C
E
G
C
E
TO-220TO-247
C
E
TO-263
D2PAK
C
E
G
Symbol
V
CE
V
GE
I
CM
I
LM
Diode Pulsed Current, Limited by T
Jmax
I
FM
t
SC
T
J
, T
STG
T
L
Symbol
R
θ
JA
R
θ
JC
R
θ
JC
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Maximum Junction-to-Ambient
5µs
T
C
=100°C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
AOK20B65M1 TO247 Tube 240
Parameter
A
60
AOB20B65M1 TO263 Tape & Reel 800
TO220 Tube 1000
°C/W1.5
300
-55 to 175
227
°C/W
114
°C
AOK20B65M1 AOT(B)20B65M1
40 65
60
W
Units
A
60
Thermal Characteristics
°C
Power Dissipation P
D
Short circuit withstanding time
1)
V
GE
=15V, V
CC
≤400V, T
J
≤175°C
Junction and Storage Temperature Range
T
C
=25°C
Maximum Diode Junction-to-Case
°C/W0.66Maximum IGBT Junction-to-Case
V
UnitsParameter
A
AOK20B65M1/AOT(B)20B65M1
Collector-Emitter Voltage 650
Orderable Part Number
AOT20B65M1
V
A
I
C
Turn off SOA, V
CE
≤650V, Limited by T
Jmax
Pulsed Collector Current, Limited by T
Jmax
Gate-Emitter Voltage
T
C
=100°C
A
Minimum Order QuantityPackage Type Form
Continuous Diode
Forward Current
T
C
=25°C I
F
40 A
T
C
=100°C
Continuous Collector
Current
T
C
=25°C
20
40
20
±30
E
AOT20B65M1
G
C
AOK20B65M1
G
AOB20B65M1
Rev.3.0: May 2016 www.aosmd.com Page 1 of 9
Symbol Min Typ Max Units
BV
CES
Collector-Emitter Breakdown Voltage 650 - - V
T
J
=25°C - 1.7 2.15
T
J
=125°C - 2.02 -
T
J
=175°C - 2.2 -
T
J
=25°C - 1.66 2.1
T
J
=125°C - 1.67 -
T
J
=175°C - 1.62 -
V
GE(th)
Gate-Emitter Threshold Voltage - 5.1 - V
T
J
=25°C - - 10
T
J
=125°C - - 500
T
J
=175°C - - 5000
I
GES
Gate-Emitter leakage current - - ±100 nA
g
FS
- 14 - S
C
ies
- 1212 - pF
C
oes
- 141 - pF
C
res
- 50 - pF
Q
g
- 46 - nC
Q
ge
- 12 - nC
Q
gc
- 21 - nC
I
C(SC)
- 115 - A
R
g
- 13 - Ω
t
D(on)
- 26 - ns
t
r
- 25 - ns
t
D(off)
- 122 - ns
t
f
- 13 - ns
E
on
- 0.47 - mJ
E
off
- 0.27 - mJ
E
total
- 0.74 - mJ
t
rr
- 322 - ns
Q
rr
- 0.8 - µC
I
rm
- 5.2 - A
t
D(on)
- 27 - ns
t
r
- 24 - ns
t
D(off)
- 150 - ns
t
f
- 28 - ns
E
on
- 0.52 - mJ
E
off
- 0.49 - mJ
E
total
- 1.01 - mJ
t
rr
- 494 - ns
Q
rr
- 1.6 - µC
I
rm
- 7.1 - A
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Collector-Emitter Saturation Voltage
Output Capacitance
Input Capacitance
I
CES
Zero Gate Voltage Collector Current
V
F
Diode Forward Voltage
DYNAMIC PARAMETERS
µA
V
CE
=5V, I
C
=1mA
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Reverse Transfer Capacitance
V
GE
=0V, V
CC
=25V, f=1MHz
V
CE
=20V, I
C
=20A
V
CE
=0V, V
GE
=±30V
Forward Transconductance
V
CE(sat)
I
C
=1mA, V
GE
=0V, T
J
=25°C
V
GE
=15V, I
C
=20A V
V
CE
=650V, V
GE
=0V
V
GE
=0V, I
F
=20A V
Gate to Collector Charge
Gate to Emitter Charge V
GE
=15V, V
CC
=520V, I
C
=20A
SWITCHING PARAMETERS, (Load Inductive, T
J
=25°C)
Short circuit collector current V
GE
=15V, V
CC
=400V,
t
sc
≤5us, T
J
≤175°C
Total Gate Charge
Gate resistance V
GE
=0V, V
CC
=0V, f=1MHz
Turn-Off Energy
Turn-On Rise Time
Turn-On DelayTime
SWITCHING PARAMETERS, (Load Inductive, T
J
=175°C)
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Diode Peak Reverse Recovery Current
T
J
=25°C
I
F
=20A, di/dt=200A/µs, V
CC
=400V
Turn-Off Delay Time T
J
=25°C
V
GE
=15V, V
CC
=400V, I
C
=20A,
R
G
=15Ω
Total Switching Energy
Turn-Off Fall Time
Turn-On Energy
T
J
=175°C
I
F
=20A, di/dt=200A/µs, V
CC
=400V
Diode Reverse Recovery Charge
Diode Peak Reverse Recovery Current
Turn-On DelayTime
T
J
=175°C
V
GE
=15V, V
CC
=400V, I
C
=20A,
R
G
=15Ω
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-On Energy
Diode Reverse Recovery Time
Turn-Off Energy
Total Switching Energy
Rev.3.0: May 2016 www.aosmd.com Page 2 of 9
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
50
60
0 0.5 1 1.5 2 2.5 3
IF(A)
V
(V)
25°C
175°C
-40°C
0
15
30
45
60
75
90
01234567
IC(A)
VCE (V)
Figure 1: Output Characteristic
(Tj=25°C)
9
V
20V 17V
15V
11V
VGE= 7V
13V
0
10
20
30
40
50
3 6 9 12 15
IC (A)
V
GE
(V)
175°C
25°C
-40°C
VCE=20V
0
15
30
45
60
75
0 1 2 3 4 5 6 7
IC(A)
VCE (V)
Figure 2: Output Characteristic
(Tj=175°C)
V
GE
=7V
9
V
20V
17V
15V
11V
13V
V
F
(V)
Figure 4: Diode Characteristic
V
GE
(V)
Figure 3: Transfer Characteristic
0
1
2
3
4
5
0 25 50 75 100 125 150 175
VCE(sat)
(V)
Temperature (°C)
Figure 5: Collector-Emitter Saturation Voltage vs.
Junction Temperature
IC=40A
IC=10A
IC=20A
0
0.5
1
1.5
2
2.5
3
0 25 50 75 100 125 150 175
VF(V)
Temperature (°C)
Figure 6: Diode Forward voltage vs. Junction
Temperature
40A
20A
5A
IF=1A
Rev.3.0: May 2016
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Page 3 of 9
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
3
6
9
12
15
0 10 20 30 40 50
VGE (V)
Qg (nC)
Figure 7: Gate-Charge Characteristics
VCE=520V
IC=20A
0
60
120
180
240
300
25 50 75 100 125 150 175
Power Disspation
(W)
T
(
°
C)
1
10
100
1000
10000
0 8 16 24 32 40
Capacitance (pF)
VCE (V)
Figure 8: Capacitance Characteristic
Cies
Cres
Coes
T
CASE
(
°
C)
Figure 10: Power Disspation as a Function of Case
0
10
20
30
40
50
25 50 75 100 125 150 175
Current rating IC
(A)
TCASE (°C)
Figure 11: Current De-rating
1E-08
1E-07
1E-06
1E-05
1E-04
1E-03
1E-02
0 25 50 75 100 125 150 175
ICE(S) (A)
Temperature (°C)
Figure 12: Diode Reverse Leakage Current vs.
Junction Temperature
VCE=650V
VCE=520V
Rev.3.0: May 2016
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Page 4 of 9
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1
10
100
1000
10000
10 15 20 25 30 35 40
Switching Time (ns)
IC (A)
Figure 13: Switching Time vs. IC
(Tj=175°C, VGE=15V, VCE=400V, Rg=15Ω)
Td(off)
Tf
Td(on)
Tr
1
10
100
1000
10000
0 30 60 90 120 150
Switching Time (ns)
Rg(Ω)
Figure 14: Switching Time vs. Rg
(Tj=175°C, VGE=15V, VCE=400V, IC=20A)
Td(off)
Tf
Td(on)
Tr
1
10
100
1000
10000
Switching Time (ns)
Td(off)
Tf
Td(on)
Tr
1
2
3
4
5
6
7
VGE(TH) (V)
25 50 75 100 125 150 175
TJ (°C)
Figure 15: Switching Time vs.Tj
(VGE=15V, VCE=400V, IC=20A, Rg=15Ω)
0 25 50 75 100 125 150 175
TJ(°C)
Figure 16: VGE(TH) vs. Tj
Rev.3.0: May 2016
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Page 5 of 9
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
0.5
1
1.5
2
2.5
3
10 15 20 25 30 35 40
SwitchIng Energy (mJ)
IC (A)
Figure 17: Switching Loss vs. IC
(Tj=175°C, VGE=15V, VCE=400V, Rg=15Ω)
Eoff
Eon
Etotal
0
0.5
1
1.5
2
2.5
3
0 30 60 90 120 150
Switching Energy (mJ)
Rg(Ω)
Figure 18: Switching Loss vs. Rg
(Tj=175°C, VGE=15V, VCE=400V, IC=20A)
Eoff
Eon
Etotal
0.3
0.6
0.9
1.2
1.5
Switching Energy (mJ)
Eoff
Eon
Etotal
0.3
0.6
0.9
1.2
1.5
Switching Energy (mJ)
Eoff
Eon
Etotal
0
25 50 75 100 125 150 175
TJ (°C)
Figure 19: Switching Loss vs. Tj
(VGE=15V, VCE=400V, IC=20A, Rg=15Ω)
0
200 250 300 350 400 450 500
VCE (V)
Figure 20: Switching Loss vs. VCE
(Tj=175°C, VGE=15V, IC=20A, Rg=15Ω)
Rev.3.0: May 2016
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□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
30
0
120
240
360
480
600
10 15 20 25 30 35 40
S
Trr (ns)
IF(A)
Figure 22: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
(VGE=15V, VCE=400V, di/dt=200A/µs)
175°C
25°C
175°C
25°C
Trr
S
0
8
16
24
32
40
0
500
1000
1500
2000
2500
10 15 20 25 30 35 40
Irm (A)
Qrr (nC)
IF (A)
Figure 21: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
(VGE=15V, VCE=400V, di/dt=200A/µs)
25°C
175°C
175°C
25°C
Qrr
Irm
5
10
15
20
25
30
120
240
360
480
600
S
Trr (ns)
25
°
C
175°C
25°C
175°C
Trr
S
8
16
24
32
40
400
800
1200
1600
2000
Irm (A)
Qrr (nC)
175°C
25°C
175°C
25°C
Qrr
Irm
00
200 300 400 500 600 700 800
di/dt (A/µs)
Figure 24: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
(VGE=15V, VCE=400V, IF=20A)
00
200 300 400 500 600 700 800
di/dt (A/µs)
Figure 23: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
(VGE=15V, VCE=400V, IF=20A)
Rev.3.0: May 2016
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□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.001
0.01
0.1
1
10
1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10
ZθJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 25: Normalized Maximum Transient Thermal Impedance for IGBT
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.66°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
Ton
T
PDM
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10
ZθJC Normalized Transient
Thermal Resistance
Pulse Width (s)
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse Ton
T
PDM
Pulse Width (s)
Figure 26: Normalized Maximum Transient Thermal Impedance for Diode
Rev.3.0: May 2016
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Page 8 of 9
Figure A: Gate Charge Test Circuit & Waveforms
Figure B: Inductive Switching Test Circuit & Waveforms
Figure C: Diode Recovery Test Circuit & Waveforms
Rev.3.0: May 2016
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Page 9 of 9