SIEMENS FEATURES * High Current Transfer Ratios SFH601-1, 40 to 80% SFH601-2, 63 to 125% SFH601-3, 100 to 200% SFH601-4, 160 to 320% laglation Test Voltage (1 Sec.), 5300 VACays Vcesat 0.25 (50.4) V at ip=10 mA, 19=2.5 mA Bullt te Conform to VDE Requirements Highest Quality Premium Device Long Term Stability Storage Temperature: 55 to +150C Underwriters Lab Fite #E52744 CECC Approved VDE 0884 Available with Option 1 oe sp epee ees Maximum Ratings Emitter Reverse Voltage DC Forward Current 0... , Surge Forward Current (Ip= 10 ps) -.. Total Power Dissipation... Detector Collactor-Emitter Voltage ............. Emitter-Base Vottage ...... Collector Current... Collector Current (t=1 ms) Power Dissipation ....00.0...0.......... Package Isolation Tast Voltage (between emitter and detector referred to climate OIN 40046, part 2, Nov. 74) (l=1 sec.) - 8300 VACaus Creepage ... bie eee 2FMM CIOATANCE ooo eters cece a. 27mm Isolation Thickness between Emitter and Detector oo. Streeter SOL PIM Comparative Tracking Index per DIN JEG 112VDEO303, part dca 175 tsalation Resistance Vine 800 V, Ty 25C voces 2107 Vig=500 V, Ta= 100C ooo 2701 Package Storage Temperature Range... 65C to +150C Ambient Temperature Range ... vee BBC 10 + 100C Junction Temperature... ce Soldering Temperatura (max, 10 s, dip soldering: distance to seating plane 21.5 mm) ...u.. 2608S SFH601 SERIES TRIOS** PHOTOTRANSISTOR OPTOCOUPLER Package Dimensions in Inches (mm) Pin Gne ID. _ Fh Anode [1] (6 |Base 248 (6.30) ly ly ope Cathode [2 | \ 15 | Collector | BY TBY nc [a] U4 JeEmitter |_.-335 (850) | 343 (8.70) O39 2 OT Ee) (1.00) "| | + YP. min. OT 4 190 (3.30) #150 (3.81) ' io \ ae _t goes ; + te typ. 110 (2.79) _ 020 {.051} min 150 (3.84 F HB oto..25) Yes a3 wil|_ 031 (0.80) HR 014 (35) t sin 018 (0.46) ) | 035 (0.50) 2 fel 022 (0 55} | 300 (7.62) Be 100 (2.54) typ. 347 (8.82) s DESCRIPTION The SFH601 is an optocoupler with a Gallium Arsenide LED emitter which is optically coupled with a silicon planar phototrans- istor detector, The component is packaged in a plastic plug-in case 20 AB DIN 41866. The coupler transmits signals between two electrically isolated circuits. Characteristics (T,=25C) Emitter Symbol Unit Condition Forward Voltage Ve 1.25 (51.65) [p=60 mA Breakdown Voltage Ver 26 v Ip=10 pA Reverse Current la 0.01 (s10} pA Vp_=6V Capacitance Cup 25 pF Ve=0 V, f=1 MHz Thermat Resistance Ritvams 750 C Detector Capacitance pF f=1 MHz Collector-Emitter Cog 68 Vop=5 V Callector-Base Ceca 85 Vop=5 Emitter-Base Cea 1 Ven=5 V Thermal Resistance RT HJamb 500 SCY Package Collector-Emitter VoEsat 0.25 {<0.4) IF=10 mA, Saturation Voltage Ig=2.5 mA Coupling Capacitance Cig 0.6 PF V.9=0, f= 1 MHz *TRIOS-TRansparent IQn Shield 5-227Current Transfer Ratio and Coflector-Emltter Leakage Current by dash number -1 -2 3 4 Unit icflp at Vcp=S (Ip=10 mA) 40-80 | 63-125 | 100-200 | 160-320 % ioflp at Vop=5 V (lp=1 mA) 30 (> 13} | 45 (>22}) 70 (>34) |90 (>56) Yo Collector-Emitter Leakage Current | 2 (550) | 245 50)] 5 (s 100) 15 (s 100) nA (Vce=10 ) (leeo) Linear Operation (without saturation) v lp=10 MA, Vor 25 V, T,4=26C, Typical Load Resistance RL 75 Q Turn-On Tima ton 30 us Rise Time Ip 20 ys Turn-Otf Time lore 23 ys Fail Time & 2.0 HS Cut-Otf Frequency Foo 250 kHz Switching Operation (with saturation) oo OT 47 Typical -1 2 and -3 =4 (lp=20 mA) | (rp=10mA) | (p=5 MA) Turn-On Time low 3.0 42 6.0 ys Rise Time ta 20 3.0 46 ps Turn-Off Tima torr 18 2a 25 HS Fall Time A 11 14 15 HS Voesat 0.25 ( 0.4) v ae ad Figure 1. Current transfer ratio versus diode current (T,=-25C, V,.=5 V) Lfl, =f (1,) OWOD0ES2 13 * oC * fmm Pulsbetrieb 3 10? | 30! 107! Smalg' 2 eh 5 10 Figure 2. Currant transfer ratlo versus diode current (T,=0C, Voc=5 V) [ofl = (1), 10 r OHODOEI! a craters ~ 5 107 io! tort 5s 10 Smato' 2 -i; Figure 3. Current tranefer ratio versus diode current (T,=25C, Voe=5 V) Iofl-=f (i, ONODO6I0 19 a 4 === Pulsbatrieb Smara' 2 -+!; 5-228 SFH601ke Figure 4. Current tranafer ratio veraua diodes current (T,=50C, NMce=5 ) oflp=t (lr), 10 % Putabatries i HONE 103 so Smalo! 2 th 5 10 Figure 7. Transistor characteristics (HFE=550} lo=f(Voe} (Ta=25C, 1-=0) GHODESS % ma | mo Pulabetrie | 20 10 a 6 ae Vee 15 Figure 10. Collector emitter off-atate currantlceg=t (V, T} (T,=25C, I;=0) Fs) SO 75 C 100 nh Figure 5. Current transter ratio versus diode current (T,=75C, Voe=5 V) lo/lp=t (le) 105 Xba wePulsbalrieb 5 OnOnddte 103 ja! ww! 5 10 smaio! 2 ~!; Figure 6. Output characteristica lo=f (ce) (Ta=25C) 30 onODONSS = OC =~ Pulsbairled: att \ m+ 20 zl 0 6Y ae Fer 15 Figure 11. Saturation voltage versus collector current and modulation depth SFHB01-1 Vogga=t (Io) (Ta=25C) 19 Keeaat oe 07 4 05 4 a3 02 01 o 10 5 mate Figure 6. Current transfer ratio versus temperature (-=10 mA, Voe=8 V} loflpst (TF = OC Ab a= Pulsbalrieb 10? io! 23 S) *c Ft =h 25 Figure 9. Forward voltage Ve=f (te) Wz . Optocouplers (Optoisolators} eo aka 1 h coos Dd 5 0 Seat? ~4 Oe 5 Figure 12. Saturation voltage versus collectorcurrent and modulation dapth SFHGO1-2 Vocsa=t (lo) (T4=25C) 14 0.8 07 06 65 ob 0,3 02 of 6 0 5 5 mato ot, 5-229 SFH601Figure 13. Saturation voltage versus collector current and modulation depth SFH601-3 Vocsa =f (Io) (Ta=25C} feel, Meent O68 07 a6 05 0,4 03 92 01 5 maw c 0 10 5s } Figure 14. Saturation voltage versus collector current and modulation depth SFH601-4 Vocaat {Io} (Ta=25C) 10 v a7 a6 os On 03 fetal 02 haank 01 i 5 1! 5 ma 10? a i Figure 16, Permissible power dissipation Figure 17. Permissible forward current for transistor and diode P,,,=f (T,) m0 md Pro ] diode P,,,.=t (Ta) Figure 15. Permlesibie pulse load D=parameter, T,=25C, Ip=t (t) w' eo a mw wo ows =fh Figure 18. Transistor capacitance C=f(Vo) (T,=25C, f=1 MHz) 5-230 SFHS01