• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
1
Linear RF Power TMOS
150W, 30MHz 100V M/A-COM Products
Preliminary - Rev. 1108
MAPF-250128-150000
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
Features
• Designed for Industrial, Scientific, Medical appli-
cations
• N-Channel enhancement mode MOSFET
• Specified 100V, 30MHz and 128MHz, Class AB
• Internally insulated Source terminals simplify
heatsinking
• High Voltage - Lower Current - Less Circuit Loss
• Gold Metallization System for Reliability
Characteristics
Output Power = 150 Watts
Power Gain = 20 dB (Typ, 30MHz), 15 dB (Typ,
128MHz)
Case 211-11, Styl e 2
Parameter Symbol Rating Units
Drain Source Voltage VDS 250 V
Gate Source Voltage VDS +/-40 V
Drain Current ID 8.0(tbd) A
Total Power Dissipation
PD 300 W
Storage Temperature TSTG -65 to +150 °C
Junction Temperature TJ 200 °C
ABSOLUTE MAXIMUM RATINGS AT 25°C
Parameter Symbol Test Conditions Min Max Units
Drain Source Breakdown Voltage BVDSS ID = 100mA 250 - V
Drain Source Leakage Current IDSS VDS = 100 V - 5 mA
Gate Source Leakage Current IGSS VGS = 10 V - 1 µA
Forward Transconductance GM IDS =2.0 A, VDS =10 V, 3 - S
Gate Source Threshold Voltage Vgs(TH) VDS = 10 V, ID = 100mA 2 5 V
Drain Source On State Voltage VDS(ON) VGS=10V, IDS = 5 A - 6.6 V
Output Capacitance COSS VDS = 100 V, VGS=0V, f = 1 MHz - 120 pF
Feedback Capacitance CRSS VDS = 100 V, VGS=0V, f = 1 MHz - 15 pF
Input Capacitance CISS VDS = 100 V, VGS=0V, f = 1 MHz - 350 pF
Thermal Resistance RTHjc VDS = 100 V, PDISS = 100W, Tj = 150C - 0.6 °C/W
ELECTRICAL CHARACTERISTICS AT 25°C
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
2
Linear RF Power TMOS
150W, 30MHz 100V M/A-COM Products
Preliminary - Rev. 1108
MAPF-250128-150000
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
RF Electrical Characteristics at 25°C*
* Test conditions unless otherwise sp ecified: VDD = 100V, IDQ = 160 mA, F1 = 30MHz, F2 = F1 +0.001MHz
Parameter Symbol Test Conditions Minimum Maximum Units
Power Gain GP Pout = 150 W (PEP)
Pout = 150 W, F = 128 MHz CW 19
14 dB
dB
Drain Efficiency η Pout = 150 W (PEP)
Pout = 150 W, F = 128 MHz CW 40
50 %
%
Intermodulation IM3 Pout =150 W (PEP), -30 dBc
Electrical Ruggedness Ψ Pout = 150 W (PEP), VSWR 5:1, 360° No degradation
CW Output Power at P1dB P1DB VDD=100 V, F= 30 MHz , IDQ = 160mA
VDD=100 V, F=128 MHz , IDQ = 160mA 150
150 Watts
Watts
Large Signal Impedance
VDD = 100V; IDQ = 160mA; POUT = 150W (PEP), 30MHz; POUT = 150W (P1dB), 128MHz
F (MHz) Z IN (Ω) Z L(opt) (Ω)
30 5.09-j0.84 17.71+j14.21
128 1.90+j2.71 3.04+j7.08
ZIN = Complex conjugate of source impedance
Z L(OPT) =Load impedance for optimum output power and IMD at
specified voltage, quiescent current and efficiency.
30MHz Test Circuit
