Order this document by MRF1518/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N-Channel Enhancement-Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 12.5 volt mobile FM equipment. * Specified Performance @ 520 MHz, 12.5 Volts Output Power -- 8 Watts Power Gain -- 11 dB Efficiency -- 55% * Capable of Handling 20:1 VSWR, @ 15.5 Vdc, 520 MHz, 2 dB Overdrive * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * RF Power Plastic Surface Mount Package * Broadband UHF/VHF Demonstration Amplifier Information Available Upon Request * Available in Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel. 520 MHz, 8 W, 12.5 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET CASE 466-02, STYLE 1 (PLD-1.5) PLASTIC MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 40 Vdc Gate-Source Voltage VGS 20 Vdc Drain Current -- Continuous ID 4 Adc Total Device Dissipation @ TC = 25C (1) Derate above 25C PD 62.5 0.50 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 150 C Symbol Max Unit RJC 2 C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) Calculated based on the formula PD = TJ - TC RJC NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 3 MOTOROLA RF DEVICE DATA Motorola, Inc. 2002 MRF1518T1 1 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Current (VDS = 40 Vdc, VGS = 0 Vdc) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 10 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 12.5 Vdc, ID = 100 A) VGS(th) 1.0 1.6 2.1 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) -- 0.4 -- Vdc Input Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1 MHz) Ciss -- 66 -- pF Output Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1 MHz) Coss -- 33 -- pF Reverse Transfer Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1 MHz) Crss -- 4.5 -- pF Common-Source Amplifier Power Gain (VDD = 12.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 520 MHz) Gps 10 11 -- dB Drain Efficiency (VDD = 12.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 520 MHz) 50 55 -- % OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (In Motorola Test Fixture) MRF1518T1 2 MOTOROLA RF DEVICE DATA B1, B2 Short Ferrite Beads, Fair Rite Products (2743021446) 240 pF, 100 mil Chip Capacitors 0 to 20 pF Trimmer Capacitors 82 pF, 100 mil Chip Capacitor 120 pF, 100 mil Chip Capacitors 10 F, 50 V Electrolytic Capacitors 1,200 pF, 100 mil Chip Capacitors 0.1 mF, 100 mil Chip Capacitors 30 pF, 100 mil Chip Capacitor 55.5 nH, 5 Turn, Coilcraft Type N Flange Mounts 15 Chip Resistor (0805) 51 , 1/2 W Resistor 10 Chip Resistor (0805) C1, C12 C2, C3, C10, C11 C4 C5, C16 C6, C13 C7, C14 C8, C15 C9 L1 N1, N2 R1 R2 R3 R4 Z1 Z2 Z3 Z4 Z5, Z6 Z7 Z8 Z9 Z10 Board 33 k, 1/8 W Resistor 0.451 x 0.080 Microstrip 1.005 x 0.080 Microstrip 0.020 x 0.080 Microstrip 0.155 x 0.080 Microstrip 0.260 x 0.223 Microstrip 0.065 x 0.080 Microstrip 0.266 x 0.080 Microstrip 1.113 x 0.080 Microstrip 0.433 x 0.080 Microstrip Glass Teflon, 31 mils, 2 oz. Copper Figure 1. 450 - 520 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 450 - 520 MHz ,-. & &"&&#'% &&!"&#!$% ,-. ,-. ,-. / + '0 + + + + )* !" #!$% + Figure 2. Output Power versus Input Power MOTOROLA RF DEVICE DATA + / + '0 ( ,-. ( ,-. ,-. ( ,-. ( !" #!$% Figure 3. Input Return Loss versus Output Power MRF1518T1 3 TYPICAL CHARACTERISTICS, 450 - 520 MHz ,-. ,-. $ &#'% "11&$ &" "2&#3% ,-. ,-. !" #!$% / + '0 "11&$ &" "2&#3% ,-. ,-. ,-. / + '0 )* / + '5 ,-. 4 $ " #5$% ,-. ,-. ,-. / + '0 )* / + '5 ,-. "11&$ &" "2&#3% ,-. ,-. 4 / 5$ )* / + '5 2 $" #% Figure 8. Output Power versus Supply Voltage MRF1518T1 4 4 $ " #5$% Figure 7. Drain Efficiency versus Biasing Current ,-. Figure 6. Output Power versus Biasing Current &&!"&#!$% ,-. !" #!$% Figure 5. Drain Efficiency versus Output Power &&!"&#!$% ,-. Figure 4. Gain versus Output Power ,-. / + '0 ,-. ,-. ,-. ,-. ,-. ,-. 4 / 5$ )* / + '5 2 $" #% Figure 9. Drain Efficiency versus Supply Voltage MOTOROLA RF DEVICE DATA B1, B2 C1, C14 C2, C3, C4, C11, C12, C13 C5 C6 C7, C18 C8, C15 C9, C16 C10, C17 L1 N1, N2 R1 R2 10 Chip Resistor (0805) 33 k, 1/8 W Resistor 0.476 x 0.080 Microstrip 0.724 x 0.080 Microstrip 0.348 x 0.080 Microstrip 0.048 x 0.080 Microstrip 0.175 x 0.080 Microstrip 0.260 x 0.223 Microstrip 0.239 x 0.080 Microstrip 0.286 x 0.080 Microstrip 0.806 x 0.080 Microstrip 0.553 x 0.080 Microstrip Glass Teflon, 31 mils, 2 oz. Copper R3 R4 Z1 Z2 Z3 Z4 Z5 Z6, Z7 Z8 Z9 Z10 Z11 Board Short Ferrite Beads, Fair Rite Products (2743021446) 240 pF, 100 mil Chip Capacitors 0 to 20 pF Trimmer Capacitors 30 pF, 100 mil Chip Capacitor 47 pF, 100 mil Chip Capacitor 120 pF, 100 mil Chip Capacitors 10 F, 50 V Electrolytic Capacitors 1,200 pF, 100 mil Chip Capacitors 0.1 F, 100 mil Chip Capacitors 55.5 nH, 5 Turn, Coilcraft Type N Flange Mounts 15 Chip Resistor (0805) 51 , 1/2 W Resistor Figure 10. 400 - 470 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 400 - 470 MHz & &"&&#'% &&!"&#!$% ,-. ,-. ,-. / + '0 / + '0 ( ,-. ( ,-. ( ,-. + + + + + )* !" #!$% + Figure 11. Output Power versus Input Power MOTOROLA RF DEVICE DATA + ( !" #!$% Figure 12. Input Return Loss versus Output Power MRF1518T1 5 TYPICAL CHARACTERISTICS, 400 - 470 MHz $ &#'% ,-. "11&$ &" "2&#3% ,-. ,-. / + '0 ,-. / + '0 !" #!$% Figure 13. Gain versus Output Power ,-. / + '0 )* / + '5 4 $ " #5$% ,-. / + '0 )* / + '5 ,-. 2 $" #% Figure 17. Output Power versus Supply Voltage MRF1518T1 6 ,-. ,-. ,-. 4 / 5$ )* / + '5 4 $ " #5$% Figure 16. Drain Efficiency versus Biasing Current ,-. "11&$ &" "2&#3% &&!"&#!$% ,-. ,-. Figure 15. Output Power versus Biasing Current !" #!$% ,-. ,-. ,-. Figure 14. Drain Efficiency versus Output Power "11&$ &" "2&#3% &&!"&#!$% ,-. ,-. 4 / 5$ )* / + '5 2 $" #% Figure 18. Drain Efficiency versus Supply Voltage MOTOROLA RF DEVICE DATA B1, B2 L4 N1, N2 R1 R2 R3 R4 Z1 Z2 Z3 Z4 Z5, Z6 Z7 Z8 Z9 Z10 Board Short Ferrite Beads, Fair Rite Products (2743021446) 330 pF, 100 mil Chip Capacitors 0 to 20 pF Trimmer Capacitors 12 pF, 100 mil Chip Capacitor 43 pF, 100 mil Chip Capacitor 75 pF, 100 mil Chip Capacitors 10 F, 50 V Electrolytic Capacitors 1,200 pF, 100 mil Chip Capacitors 0.1 F, 100 mil Chip Capacitors 75 pF, 100 mil Chip Capacitor 13 pF, 100 mil Chip Capacitor 26 nH, 4 Turn, Coilcraft 5 nH, 2 Turn, Coilcraft 33 nH, 5 Turn, Coilcraft C1, C13 C2, C4, C11 C3 C5 C6, C17 C7, C14 C8, C15 C9, C16 C10 C12 L1 L2 L3 55.5 nH, 5 Turn, Coilcraft Type N Flange Mounts 15 W Chip Resistor (0805) 56 W, 1/4 W Carbon Resistor 100 W Chip Resistor (0805) 33 kW, 1/8 W Carbon Resistor 0.115 x 0.080 Microstrip 0.255 x 0.080 Microstrip 1.037 x 0.080 Microstrip 0.192 x 0.080 Microstrip 0.260 x 0.223 Microstrip 0.125 x 0.080 Microstrip 0.962 x 0.080 Microstrip 0.305 x 0.080 Microstrip 0.155 x 0.080 Microstrip Glass Teflon, 31 mils, 2 oz. Copper Figure 19. 135 - 175 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 135 - 175 MHz / + '0 & &"&&#'% &&!"&#!$% ,-. ,-. ,-. / + '0 + + + )* !" #!$% Figure 20. Output Power versus Input Power MOTOROLA RF DEVICE DATA + ( ,-. ( ,-. ,-. ( ( !" #!$% Figure 21. Input Return Loss versus Output Power MRF1518T1 7 TYPICAL CHARACTERISTICS, 135 - 175 MHz ,-. "11&$ &" "2&#3% ,-. $ &#'% ,-. !" #!$% ,-. ,-. / + '0 / + '0 ,-. Figure 22. Gain versus Output Power / + '0 )* / + '5 4 $ " #5$% / + '0 )* / + '5 "11&$ &" "2&#3% &&!"&#!$% 4 / 5$ )* / + '5 2 $" #% Figure 26. Output Power versus Supply Voltage MRF1518T1 8 ,-. 4 $ " #5$% Figure 25. Drain Efficiency versus Biasing Current ,-. ,-. ,-. Figure 24. Output Power versus Biasing Current ,-. ,-. ,-. ,-. !" #!$% ,-. Figure 23. Drain Efficiency versus Output Power "11&$ &" "2&#3% &&!"&#!$% ,-. ,-. ,-. 4 / 5$ )* / + '5 2 $" #% Figure 27. Drain Efficiency versus Supply Voltage MOTOROLA RF DEVICE DATA / 1 / ,-. )* 6 1 / ,-. 1 / ,-. )* 6 1 / ,-. 1 / ,-. / )* 6 1 / ,-. / + 4 / 5$ / ! / + 4 / 5$ / ! Zin / + 4 / 5$ / ! f MHz Zin ZOL* f MHz Zin ZOL* f MHz Zin ZOL* 450 4.9 +j2.85 6.42 +j3.23 400 4.28 +j2.36 4.41 +j0.67 135 18.31 -j0.76 8.97 +j2.62 470 4.85 +j3.71 4.59 +j3.61 440 6.45 +j5.13 4.14 +j2.53 155 17.72 +j1.85 9.69 +j2.81 500 4.63 +j3.84 4.72 +j3.12 470 5.91 +j3.34 3.92 +j4.02 175 18.06 +j5.23 7.94 +j1.14 520 3.52 +j3.92 3.81 +j3.27 Zin = Complex conjugate of source impedance with parallel 15 resistor and 82 pF capacitor in series with gate. (See Figure 1). ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %. = Complex conjugate of source impedance with parallel 15 resistor and 47 pF capacitor in series with gate. (See Figure 10). ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %. Zin = Complex conjugate of source impedance with parallel 15 resistor and 43 pF capacitor in series with gate. (See Figure 19). ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %. Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency, and device stability. *7 ,809)*: ;<=> 7 ,809)*: ;<=> ;?)0; *';= ;@ Z in Z * OL Figure 28. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA MRF1518T1 9 Table 1. Common Source Scattering Parameters (VDD = 12.5 Vdc) IDQ = 150 mA S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 50 0.88 -148 18.91 99 0.033 11 0.67 -144 100 0.85 -163 9.40 86 0.033 -6 0.66 -158 200 0.85 -170 4.47 73 0.026 -17 0.69 -162 300 0.87 -171 2.72 64 0.025 -28 0.74 -163 400 0.88 -172 1.85 56 0.021 -21 0.79 -164 500 0.90 -173 1.35 52 0.019 -30 0.83 -165 600 0.92 -173 1.04 47 0.014 -26 0.85 -167 700 0.93 -174 0.83 44 0.015 -39 0.88 -168 800 0.94 -175 0.68 39 0.014 -31 0.90 -169 900 0.94 -175 0.55 36 0.010 -41 0.91 -170 1000 0.96 -176 0.46 30 0.011 -38 0.95 -170 IDQ = 800 mA S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 50 0.90 -159 20.80 97 0.020 14 0.73 -162 100 0.88 -169 10.35 88 0.018 1 0.74 -169 200 0.88 -174 5.09 79 0.017 -9 0.75 -171 300 0.89 -175 3.23 73 0.015 -18 0.77 -171 400 0.89 -175 2.30 67 0.015 -17 0.80 -171 500 0.90 -176 1.74 63 0.014 -22 0.82 -170 600 0.91 -176 1.39 59 0.014 -19 0.83 -171 700 0.92 -176 1.16 55 0.009 -23 0.85 -171 800 0.93 -176 0.96 50 0.011 -14 0.87 -172 900 0.94 -177 0.80 46 0.007 4 0.88 -173 1000 0.94 -177 0.67 41 0.010 -15 0.89 -173 IDQ = 1.5 A S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 50 0.91 -159 20.18 97 0.015 11 0.73 -165 100 0.89 -169 10.05 89 0.016 -5 0.74 -171 200 0.88 -174 4.93 80 0.015 -3 0.75 -172 300 0.89 -175 3.14 73 0.014 -14 0.78 -172 400 0.89 -176 2.24 67 0.014 -20 0.80 -171 500 0.90 -176 1.70 64 0.014 -22 0.82 -170 600 0.92 -176 1.36 59 0.010 -16 0.84 -171 700 0.92 -176 1.13 55 0.013 -10 0.85 -171 800 0.93 -177 0.94 50 0.008 -13 0.87 -172 900 0.94 -177 0.78 46 0.013 -26 0.87 -173 1000 0.94 -178 0.65 41 0.007 8 0.87 -172 MRF1518T1 10 MOTOROLA RF DEVICE DATA APPLICATIONS INFORMATION DESIGN CONSIDERATIONS This device is a common-source, RF power, N-Channel enhancement mode, Lateral Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET). Motorola Application Note AN211A, "FETs in Theory and Practice", is suggested reading for those not familiar with the construction and characteristics of FETs. This surface mount packaged device was designed primarily for VHF and UHF portable power amplifier applications. Manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. However, care should be taken in the design process to insure proper heat sinking of the device. The major advantages of Lateral RF power MOSFETs include high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between all three terminals. The metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to-source (Cgs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance from drain-to-source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter-terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case, the numbers are lower. However, neither method represents the actual operating conditions in RF applications. =8)* :' 8; '@ )@@ / :' :@ @@ / :' '@ =@@ / :' :@ =0; DRAIN CHARACTERISTICS One critical figure of merit for a FET is its static resistance in the full-on condition. This on-resistance, RDS(on), occurs in the linear region of the output characteristic and is specified at a specific gate-source voltage and drain current. The MOTOROLA RF DEVICE DATA drain-source voltage under these conditions is termed VDS(on). For MOSFETs, VDS(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. BVDSS values for this device are higher than normally required for typical applications. Measurement of BVDSS is not recommended and may result in possible damage to the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The DC input resistance is very high - on the order of 109 -- resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage to the gate greater than the gate-to-source threshold voltage, VGS(th). Gate Voltage Rating -- Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination -- The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the devices due to voltage build-up on the input capacitor due to leakage currents or pickup. Gate Protection -- These devices do not have an internal monolithic zener diode from gate-to-source. If gate protection is required, an external zener diode is recommended. Using a resistor to keep the gate-to-source impedance low also helps dampen transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate-drain capacitance. If the gate-to-source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate-threshold voltage and turn the device on. DC BIAS Since this device is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the source. RF power FETs operate optimally with a quiescent drain current (IDQ), whose value is application dependent. This device was characterized at IDQ = 150 mA, which is the suggested value of bias current for typical applications. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may require a more elaborate bias system. GAIN CONTROL Power output of this device may be controlled to some degree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, ALC/AGC and modulation systems. This characteristic is very dependent on frequency and load line. MRF1518T1 11 MOUNTING The specified maximum thermal resistance of 2C/W assumes a majority of the 0.065 x 0.180 source contact on the back side of the package is in good contact with an appropriate heat sink. As with all RF power devices, the goal of the thermal design should be to minimize the temperature at the back side of the package. Refer to Motorola Application Note AN4005/D, "Thermal Management and Mounting Method for the PLD-1.5 RF Power Surface Mount Package," and Engineering Bulletin EB209/D, "Mounting Method for RF Power Leadless Surface Mount Transistor" for additional information. AMPLIFIER DESIGN Impedance matching networks similar to those used with bipolar transistors are suitable for this device. For examples see Motorola Application Note AN721, "Impedance Matching Networks Applied to RF Power Transistors." Large-signal MRF1518T1 12 impedances are provided, and will yield a good first pass approximation. Since RF power MOSFETs are triode devices, they are not unilateral. This coupled with the very high gain of this device yields a device capable of self oscillation. Stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. The RF test fixture implements a parallel resistor and capacitor in series with the gate, and has a load line selected for a higher efficiency, lower gain, and more stable operating region. Two-port stability analysis with this device's S-parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. See Motorola Application Note AN215A, "RF Small-Signal Design Using Two-Port Parameters" for a discussion of two port network theory and stability. MOTOROLA RF DEVICE DATA NOTES MOTOROLA RF DEVICE DATA MRF1518T1 13 NOTES MRF1518T1 14 MOTOROLA RF DEVICE DATA NOTES MOTOROLA RF DEVICE DATA MRF1518T1 15 PACKAGE DIMENSIONS L R C 2 A F N K G Q S ZONE V + + + + H 1 D B + + U ZONE X 4 3 EEEE EEEE EEEE EEEE EEEE EEEE EEE EEE 10_DRAFT P ZONE W + + + + J E 0.89 (0.035) X 45 _ "5 _ RESIN BLEED/FLASH ALLOWABLE inches mm SOLDER FOOTPRINT 2" A + + + + $ $" " " "A + ," $ "$ " $ 2+ , + + ," A + " ""B $- $!$" " ! $ C+ CASE 466-02 ISSUE B (PLD-1.5) DIM A B C D E F G H J K L N P Q R S U ZONE V ZONE W ZONE X INCHES MIN MAX + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + MILLIMETERS MIN MAX + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. MOTOROLA and the logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu. Minato-ku, Tokyo 106-8573 Japan. 81-3-3440-3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852-26668334 Technical Information Center: 1-800-521-6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF1518T1 16 MRF1518/D MOTOROLA RF DEVICE DATA