2SA1415 / 2SC3645
Rev.0 I Page 1 of 5 I www.onsemi.com
Features
•Adoption of FBET process.
•High breakdown voltage (VCEO=160V).
•Excellent linearity of hFE and small Cob.
•Fast switching speed.
•Ultrasmall size marking it easy to provide high-density,small-sized hybrid ICs.
Specifications ( ) : 2SA1415
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO (--)180 V
Collector-to-Emitter Voltage VCEO (--)160 V
Emitter-to-Base Voltage VEBO (--)5 V
Collector Current IC(--)140 mA
Collector Current (Pulse) ICP (--)200 mA
Collector Dissipation PC500 mW
Moutned on ceramic board (250mm2✕0.8mm) 1.3 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Marking : 2SA1415 : AA, 2SC3645: CA
Ordering number : EN1720B
2SA1415 / 2SC3645
PNP / NPN Epitaxial Planar Silicon Transistors
High-Voltage Switching,
Predriver Applications
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0 www.onsemi.com Publication Order Number:
2SA1415_2SC3645/D
2SA1415 / 2SC3645
Rev.0 I Page 2 of 5 I www.onsemi.com
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Collector Cutoff Current ICBO VCB=(--)80V, IE=0A (--)100 nA
Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)100 nA
DC Current Gain hFE VCE=(--)5V, IC=(--)10mA 140* 400*
Gain-Bandwidth Product fTVCE=(--)10V, IC=(--)10mA 150 MHz
Output Capacitance Cob VCB=(--)10V, f=1MHz (4.0)3.0 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)50mA, IB=(--)5mA
(--0.14)0.07
(--0.4)0.3 V
Turn-ON Time ton See sepcified Test Circuit. 0.1 µs
Strage T ime tstg See sepcified Test Circuit. 1.5 µs
Fall T ime tfSee sepcified Test Circuit. 0.1 µs
* : The 2SA1415/2SC3645 are classified by 10mA hFE as follows :
Rank S T
hFE 140 to 280 200 to 400
Package Dimensions Switching Time Test Circuit
unit : mm (typ)
7007A-004
IC -- VCE IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- mA
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- mA
ITR03510
0--20--10 --40--30 --60--50 --70 2010 4030 6050 700
0
--20
--40
--60
--100
--80
--120
--140
20
60
40
100
80
120
140
0
ITR03511
--0.6mA
--0.5mA
--0.4
mA
--0.3
mA
--0.2
mA
--0.1
mA
IB=0mA
2SA1415 2SC3645
0.1mA
0.5
mA
0.4
mA
0.3
mA
0.2
mA
0.6mA
IB=0mA
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
2.5
4.0
1.0
1.5
0.5
0.4
3.0
4.5
1.6
0.4
123
1.5
0.75
Top View
Bottom View
20V
--2V
50Ω
5kΩ
3kΩ
IN OUT
2kΩ
1µF1µF
IB1
IB2
IC=10IB1=--10IB2=10mA
For PNP, the polarity is reversed.
+ +
2SA1415 / 2SC3645
Rev.0 I Page 3 of 5 I www.onsemi.com
hFE -- IC
IC -- VBE
IC -- VBE
hFE -- IC
fT -- ICfT -- IC
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- mA
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- mA
Gain-Bandwidth Product, fT -- MHz
Collector Current, IC -- mA
Gain-Bandwidth Product, fT -- MHz
Collector Current, IC -- mA
DC Current Gain, hFE
Collector Current, IC -- mA
Collector Current, IC -- mA
DC Current Gain, hFE
Cob -- VCB Cob -- VCB
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob -- pF
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob -- pF
ITR03519
ITR03518
2
--
1.0
--
10
5732
--
100
5732
1.0 10
5732
100
573
1.0
2
3
5
7
10
100
2
3
5
7
1.0
2
3
5
7
10
100
2
3
5
7
ITR03517
ITR03516
ITR03514
5732
--
1.0
--
10 57322
--
100
100
10
3
2
5
7
1000
3
2
5
7
100
10
3
2
5
7
1000
3
2
5
7
10
100
5
7
3
2
3
2
5732
1.0 10 57322
100
10
100
5
7
3
2
3
2
57
57 32
--
1.0
--
10 57322
--
100 57
57 32
1.0 10 57322
100
ITR03515
2SA1415
VCE=--5V 2SC3645
VCE=5V
2SA1415
VCE=--10V 2SC3645
VCE=10V
2SA1415
f=1MHz 2SC3645
f=1MHz
0
--20
--40
--60
--100
--80
--120
--140
20
60
40
100
80
120
140
00.2 0.4 0.6 0.8 1.00
ITR03513
ITR03512
--
0.8
--
0.6
--
1.0
--
0.2
--
0.4
0
2SC3645
2SA1415
2SA1415 / 2SC3645
Rev.0 I Page 4 of 5 I www.onsemi.com
VBE(sat) -- ICVCE(sat) -- IC
Collector Current, IC -- mA
Base-to-Emitter
Saturation Voltage, VCE(sat) -- V
Base-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector Current, IC -- mA
PC -- Ta
Collector Dissipation, PC -- W
A S O PC -- Ta
Collector Dissipation, PC -- W
Ambient Temperature, Ta -- °C
Ambient Temperature, Ta -- °C
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- mA
VCE(sat) -- ICVCE(sat) -- IC
Collector Current, IC -- mA
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector Current, IC -- mA
ITR03522
--
1.0
5
3
7
--
10
5
3
7
2
57
--
1.0
--
10
5732
--
100
57322
1.0
5
3
7
10
5
3
7
2
10
1.0
7
3
3
2
2
100
5
5
7
5
3
2
571.0 10
5732 100
57322
101.0 5732 100
573232
ITR03071
2SC3645
IC / IB=10
2SA1415
IC / IB=10
IT13955
20 40060100 12080 140 160
0
0.2
0.4
0.6
0.8
1.0
1.3
1.4
1.6
1.2
IT13954
2SA1415 / 2SC3645
ICP=200mA
IC=140mA
1
ms
100
m
s
DC operation
IT13956
20 40060100 12080 140 160
0
0.1
0.2
0.3
0.5
0.6
0.4
2SA1415 / 2SC3645
No heat sink
2
--
1.0
--
10
57 5732 2
--
100
573
--
0.1
2
3
5
7
--
1.0
2
2
3
5
7
ITR03520
2
1.0 10
57 5732 2
100
573
0.1
2
3
5
7
1.0
2
3
5
7
ITR03521
2SC3645
IC / IB=10
2SA1415
IC / IB=10
2SA1415 / 2SC3645
Mounted on ceramic board (250mm
2
✕0.8mm)
Ta=25°C
Single pulse
For PNP, minus sign is omitted.
Mounted on ceramic board (250mm
2
✕0.8mm)
2SA1415 / 2SC3645
Rev.0 I Page 5 of 5 I www.onsemi.com 2SA1415_2SC3645/D
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