U/SST440,441 MONOLITHIC DUAL N-CHANNEL JFET FEATURES Direct Replacement for SILICONIX U/SST440 & U/SST441 HIGH CMRR CMRR 85dB LOW GATE LEAKAGE ABSOLUTE MAXIMUM RATINGS IGSS 1pA 1 U SERIES TO-71 TOP VIEW @ 25 C (unless otherwise stated) Maximum Temperatures Storage Temperature -55 to +150 C Operating Junction Temperature S1 -55 to +150 C D1 Maximum Power Dissipation @ TA = 25C Continuous Power Dissipation (Total) 1 SOIC 5 3 4 S1 1 8 NC D1 2 7 G2 G1 3 6 D2 D2 NC 4 5 S2 G2 6 2 G1 500mW SST SERIES S2 Maximum Currents Gate Current 50mA Maximum Voltages Gate to Drain -25V Gate to Source -25V Gate to Gate 50V MATCHING CHARACTERISTICS @ 25 C (unless otherwise stated) SYMBOL CHARACTERISTIC VGS1 - VGS2 Differential Gate to Source Cutoff Voltage VGS1 - VGS2 T IDSS1 IDSS2 gfs1 gfs2 CMRR MIN TYP MAX U/SST440 10 U/SST441 20 Differential Gate to Source Cutoff Voltage Change with Temperature Gate to Source Saturation Current Ratio Forward Transconductance Ratio 20 3 2 Common Mode Rejection Ratio UNITS CONDITIONS mV VDG = 10V, ID = 5mA V/C VDG = 10V, ID = 5mA TA = -55 to +125C 0.98 VDS = 10V, VGS = 0V 0.97 VDS = 10V, ID = 5mA, f = 1kHz 85 dB VDG = 5 to 10V, ID = 5mA ELECTRICAL CHARACTERISTICS @ 25 C (unless otherwise stated) SYMBOL CHARACTERISTIC MIN BVGSS Gate to Source Breakdown Voltage -25 VGS(off) Gate to Source Cutoff Voltage 2 TYP MAX V IG = -1A, VDS = 0V -1 -3.5 -6 V VDS = 10V, ID = 1nA 6 mA VDS = 10V, VGS = 0V IDSS Gate to Source Saturation Current 15 30 IGSS Gate Leakage Current -1 -500 IG Gate Operating Current -1 -500 Linear Integrated Systems * UNITS pA CONDITIONS VGS = -15V, VDS = 0V VDG = 10V, ID = 5mA 4042 Clipper Court * Fremont, CA 94538 * Tel: 510 490-9160 * Fax: 510 353-0261 2/13/12 Rev#A2 ECN# U SST 440_441 ELECTRICAL CHARACTERISTICS CONTINUED @ 25 C (unless otherwise stated) SYMBOL CHARACTERISTIC MIN 4.5 TYP MAX UNITS gfs Forward Transconductance 6 9 mS gos Output Conductance 70 200 S Ciss Input Capacitance 3 Crss Reverse Transfer Capacitance 1 en Equivalent Input Noise Voltage 4 CONDITIONS VDS = 10V, ID = 5mA, f = 1kHz pF VDS = 10V, ID = 5mA, f = 1MHz nV/Hz VDS = 10V, ID = 5mA, f = 10kHz SOIC 0.014 0.018 0.210 0.170 0.021 1 8 2 7 3 6 4 5 0.150 0.157 0.0075 0.0098 0.050 0.189 0.196 0.0040 0.0098 0.2284 0.2440 DIMENSIONS IN INCHES 1. Absolute maximum ratings are limiting values above which serviceability may be impaired. 2. Pulse Test: PW 300s Duty Cycle 3% 3. Assumes smaller value in numerator. Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Linear Integrated Systems * 4042 Clipper Court * Fremont, CA 94538 * Tel: 510 490-9160 * Fax: 510 353-0261 2/13/12 Rev#A2 ECN# U SST 440_441