Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
2/13/12 Rev#A2 ECN# U SST 440_441
FEATURES
Direct Replacement for SILICONIX U/SST440 & U/SST441
HIGH CMRR
CMRR 85dB
LOW GATE LEAKAGE
IGSS 1pA
ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-55 to +150 °C
Operating Junction Temperature
-55 to +150 °C
Maximum Power Dissipation @ TA = 25°C
Continuous Power Dissipation (Total)
500mW
Maximum Currents
Gate Current
50mA
Maximum Voltages
Gate to Drain
-25V
Gate to Source
-25V
Gate to Gate
±50V
MATCHING CHARACTERISTICS @ 25 °C (unless otherwise stated)
CHARACTERISTIC
MIN
TYP
MAX
UNITS
CONDITIONS
GS 2GS 1 VV
Differential Gate to
Source Cutoff Voltage
U/SST440
10
mV
VDG = 10V, ID = 5mA
U/SST441
20
ΔT
VVΔGS 2GS 1
Differential Gate to Source Cutoff
Voltage Change with Temperature
20
µV/°C
VDG = 10V, ID = 5mA
TA = -55 to +125°C
DSS2
DSS1
I
I
Gate to Source Saturation Current Ratio3
0.98
VDS = 10V, VGS = 0V
fs2
fs1
g
g
Forward Transconductance Ratio2
0.97
VDS = 10V, ID = 5mA, f = 1kHz
Common Mode Rejection Ratio
85
dB
VDG = 5 to 10V, ID = 5mA
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
CHARACTERISTIC
MIN
TYP
MAX
UNITS
CONDITIONS
Gate to Source Breakdown Voltage
-25
V
IG = -1µA, VDS = 0V
Gate to Source Cutoff Voltage
-1
-3.5
-6
V
VDS = 10V, ID = 1nA
Gate to Source Saturation Current2
6
15
30
mA
VDS = 10V, VGS = 0V
Gate Leakage Current
-1
-500
pA
VGS = -15V, VDS = 0V
Gate Operating Current
-1
-500
VDG = 10V, ID = 5mA
U/SST440,441
MONOLITHIC DUAL
N-CHANNEL JFET
U SERIES
SST SERIES
5
TOP VIEW
TO-71
1
2
3
6
4
D1
S1
G1
G2
D2
S2
1
2
3
4
8
7
6
5
SOIC
S1
D1
G1
NC
NC
G2
D2
S2
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
2/13/12 Rev#A2 ECN# U SST 440_441
ELECTRICAL CHARACTERISTICS CONTINUED @ 25 °C (unless otherwise stated)
CHARACTERISTIC
MIN
TYP
MAX
UNITS
CONDITIONS
Forward Transconductance
4.5
6
9
mS
VDS = 10V, ID = 5mA, f = 1kHz
Output Conductance
70
200
µS
Input Capacitance
3
pF
VDS = 10V, ID = 5mA, f = 1MHz
Reverse Transfer Capacitance
1
Equivalent Input Noise Voltage
4
nV/Hz
VDS = 10V, ID = 5mA, f = 10kHz
1. Absolute maximum ratings are limiting values above which serviceability may be impaired.
2. Pulse Test: PW 300µs Duty Cycle 3%
3. Assumes smaller value in numerator.
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its
use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Linear Integrated Systems.
0.210
0.170
1
SOIC
2
3
4 5
6
7
8
DIMENSIONS IN
INCHES
0.2284
0.2440
0.189
0.196
0.0075
0.0098
0.021
0.014
0.018 0.050
0.0040
0.0098
0.150
0.157