Linear Integrat
ed Systems
• 4042 Clipper Court • Fremont, CA 94538
• Tel: 510 490
-
9160 • Fax: 510 353
-
0261
2/13
/12 Rev#A2
ECN# U SST 440_441
FEATURES
Direct
Replacement
for SILI
CONIX U/SST440
& U/SST441
HIGH CMRR
CMRR
≥
85dB
LOW GATE LEAKAGE
I
GSS
≤
1pA
ABSOLUTE MAXIMUM R
ATINGS
1
@ 25
°C (
unles
s ot
herwi
se s
tate
d)
Maximum T
emperatu
res
Storage Temperature
-5
5 to +150 °C
Operati
ng Junct
i
on Temperature
-
55 to +150
°C
Maximum P
ower Di
ssipat
ion
@ TA
= 2
5
°C
Continuous
Power Diss
ipation
(Total)
500mW
Maximum C
urrent
s
Gate Cur
rent
50mA
Maximum V
oltage
s
Gate to
Drain
-
25V
Gate to
Source
-
25V
Gate to
Gate
±50V
MATCHING C
HARAC
TERISTICS @ 25 °
C (unless other
wise stated)
SYMBOL
CHARACTERISTIC
MIN
TYP
MAX
UNITS
CONDITIONS
GS
2
GS
1
V
V
−
Differen
tial Gat
e to
Source Cutoff
Voltage
U/SST440
10
mV
V
DG
= 10V, I
D
= 5mA
U/SST441
20
Δ
T
V
V
Δ
GS
2
GS
1
−
Differen
tia
l Gate to Sourc
e Cutoff
Voltage Change with Temperat
ure
20
µ
V/°C
V
DG
= 10V, I
D
= 5mA
T
A
=
-
55 to +125°C
DS
S
2
DS
S
1
I
I
Gate to
Source
Saturat
ion Curr
ent Rati
o
3
0.98
V
DS
= 10V, V
GS
= 0V
fs
2
fs
1
g
g
Forward Transconductance
Ratio
2
0.97
V
DS
= 10V, I
D
= 5mA,
f
=
1kHz
CMRR
Common Mode Reje
ction Rat
io
85
dB
V
DG
= 5 to 10V, I
D
= 5mA
ELECTRICAL CHARACTERISTICS @ 25 °C
(unless other
wise stated)
SYMBOL
CHARACTERISTIC
MIN
TYP
MAX
UNITS
CONDITIONS
BV
GSS
Gate to
Source
Br
eakdown Voltage
-
25
V
I
G
=
-
1
µ
A, V
DS
= 0V
V
GS(off)
Gate to
Source
Cutoff
Voltage
-1
-
3.5
-6
V
V
DS
= 10V, I
D
= 1nA
I
DSS
Gate to
Source
Saturat
ion Curr
ent
2
6
15
30
mA
V
DS
= 10V, V
GS
= 0V
I
GSS
Gate Leakage Current
-1
-
500
pA
V
GS
=
-
15V, V
DS
= 0V
I
G
Gat
e Operating Curr
ent
-1
-
500
V
DG
= 10V, I
D
= 5mA
U/SST440,441
MONOLITHIC
DUAL
N-
CHANNEL JFET
U SERIES
SST SERIES
5
TOP VIEW
TO-71
1
2
3
6
4
D1
S1
G1
G2
D2
S2
1
2
3
4
8
7
6
5
SOIC
S1
D1
G1
NC
NC
G2
D2
S2
Linear Integrat
ed Systems
• 4042 Clipper Court • Fremont, CA 94538
• Tel: 510 490
-
9160 • Fax: 510 353
-
0261
2/13
/12 Rev#A2
ECN# U SST 440_441
ELECTRICAL CHARACTERISTICS CONTINUED @ 25 °
C (unless ot
herwise stated)
SYMBOL
CHARACTERISTIC
MIN
TYP
MAX
UNITS
CONDITIONS
g
fs
Forward Transconductance
4.5
6
9
mS
V
DS
= 10V, I
D
= 5mA,
f
=
1kHz
g
os
Output
Conductanc
e
70
200
µ
S
C
iss
Input Capa
citance
3
pF
V
DS
= 10V, I
D
= 5mA,
f
=
1MHz
C
rss
Reverse Tr
ansfer Capa
citance
1
e
n
Equivalent
Input Noise
Voltage
4
nV/
√
Hz
V
DS
= 10V, I
D
= 5mA,
f
=
10kHz
1.
Absolute maximum rat
ings are limit
ing values above whi
ch serviceabilit
y may be impaired.
2.
Pulse Test: PW
≤
300
µ
s Duty Cycle
≤
3%
3.
Assumes smaller va
lue in numerator.
Information fu
rnished by Linear Integrated Systems is believed to be
accurate and reliable. However, no
responsibility is assumed for i
ts
use; nor for any infri
ngement of patents or other ri
ghts of third parties
which may result from its use.
No license is grant
ed by
implication or
otherwise under any patent or
patent rights of Linear I
ntegrated Systems.
0.210
0.170
1
SOIC
2
3
4
5
6
7
8
DIMENSIONS IN
INCHES
0.2284
0.2440
0.189
0.196
0.0075
0.0098
0.021
0.014
0.018
0.050
0.0040
0.0098
0.150
0.157
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