IRFP150N
HEXFET® Power MOSFET
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-247 package is preferred for commercial-
industrial applications where higher power levels
preclude the use of TO-220 devices. The TO-247 is
similar but superior to the earlier TO-218 package
because of its isolated mounting hole.
S
D
G
VDSS = 100V
RDS(on) = 0.036W
ID = 42A
lAdvanced Process Technology
lDynamic dv/dt Rating
l175°C Operating Temperature
lFast Switching
lFully Avalanche Rated
Description
TO-247AC
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 42
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 30 A
IDM Pulsed Drain Current 140
PD @TC = 25°C Power Dissipation 160 W
Linear Derating Factor 1.1 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy 420 mJ
IAR Avalanche Current 22 A
EAR Repetitive Avalanche Energy16 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJOperating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Parameter Typ. Max. Units
RθJCJunction-to-Case–––0.95
RθCSCase-to-Sink, Flat, Greased Surface0.24–––°C/W
RθJAJunction-to-Ambient–––40
Thermal Resistance
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ParameterMin.Typ.Max.Units Conditions
V(BR)DSSDrain-to-Source Breakdown Voltage100––––––VVGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient–––0.11–––V/°CReference to 25°C, ID = 1mA
RDS(on)Static Drain-to-Source On-Resistance––––––0.036ΩVGS = 10V, ID = 23A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 14 ––– ––– S VDS = 25V, ID = 22A
––– ––– 25 µA VDS = 100V, VGS = 0V
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V
QgTotal Gate Charge ––– – – – 110 I D = 22A
Qgs Gate-to-Source Charge ––– ––– 15 nC V DS = 80V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 58 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 11 ––– VDD = 50V
trRise Time ––– 56 ––– ID = 22A
td(off) Turn-Off Delay Time ––– 45 ––– RG = 3.6W
tfFall Time ––– 40 ––– RD = 2.9W, See Fig. 10
Between lead,
––– ––– 6mm (0.25in.)
from package
and center of die contact
Ciss Input Capacitance ––– 1900 ––– VGS = 0V
Coss Output Capacitance ––– 450 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 230 ––– ƒ = 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LDInternal Drain Inductance
LSInternal Source Inductance ––– –––
S
D
G
IGSS
ns
5.0
IDSS Drain-to-Source Leakage Current
13
Starting TJ = 25°C, L = 1.7mH
RG = 25W, IAS = 22A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
ISD ≤ 22A, di/dt ≤ 180A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRF1310N data and test conditions
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode)
––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS =23A, VGS = 0V
trr Reverse Recovery Time ––– 180 270 ns TJ = 25°C, IF = 22A
Qrr Reverse RecoveryCharge ––– 1.2 1.8 µC di/dt = 100A/µs
t
on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
A
42
140
S
D
G
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Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
1
10
100
1000
0.1 1 10 100
20us PULSE WIDTH
T = 25 C
Jo
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
1
10
100
1000
0.1 1 10 100
20us PULSE WIDTH
T = 175 C
Jo
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
1
10
100
1000
4.0 5.0 6.0 7.0 8.0 9.0 10.0
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
Jo
T = 175 C
Jo
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
o
V =
I =
GS
D
10V
36A
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100
0
500
1000
1500
2000
2500
3000
3500
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Ciss
Coss
Crss
020 40 60 80 100 120
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
22A
V = 20V
DS
V = 50V
DS
V = 80V
DS
0.1
1
10
100
1000
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS 1
10
100
1000
1 10 100 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T = 175 C
= 25 C
J
Co
o
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
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Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width £ 1 µs
Duty Factor £ 0.1 %
RD
VGS
RGD.U.T.
10V
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
25 50 75 100 125 150 175
0
10
20
30
40
50
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
25 50 75 100 125 150 175
0
200
400
600
800
1000
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
o
ID
TOP
BOTTOM
9.0A
16A
22A
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P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFETS
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
RGVDD
· dv/dt controlled by RG
· Driver same type as D.U.T.
· ISD controlled by Duty Factor "D"
· D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
· Low Stray Inductance
· Ground Plane
· Low Leakage Inductance
Current Transformer
*
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Part Marking Information
TO-247AC
Package Outline
TO-247AC Outline
Dimensions are shown in millimeters (inches)
LEAD ASSIGNMENTS
NOTES:
- D - 5.30 (.209)
4.70 (.185)
2.50 (.089)
1.50 (.059)
4
3X 0.80 (.031)
0.40 (.016)
2.60 (.102)
2.20 (.087)
3.40 (.133)
3.00 (.118)
3X
0.25 (.010) MCAS
4.30 (.170)
3.70 (.145)
- C -
2X 5.50 (.217)
4.50 (.177)
5.50 (.217)
0.25 (.010)
1.40 (.056)
1.00 (.039)
3.65 (.143)
3.55 (.140) D
MM
B
- A -
15.90 (.626)
15.30 (.602)
- B -
123
20 .30 (.800)
19 .70 (.775)
14.80 (.583)
14.20 (.559)
2.40 (.094)
2.00 (.079)
2X
2X
5.45 (.215)
1 DIMENSIO NING & TO LERAN CING
PE R A N SI Y14.5M , 1982.
2 CONTROLLING DIMENSION : INCH.
3 CONFORMS TO JEDEC OUTLINE
TO-247-AC .
1 - GA TE
2 - DR A IN
3 - SOURCE
4 - DR A IN
INTERNATIONAL
RE CTIFIER
L OGO
ASSEMBLY
LOT CODE
EXAM PLE : THIS IS AN IR FP E30
W I T H AS SE MBLY
LOT CODE 3A1Q PART NUMBER
DATE CODE
(YYW W )
YY = YEA R
WW WEEK
3A1Q 9302
IRFPE30
A
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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