Switching Chip Diode Series - 0603 / 1005
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Features
■Lead free as standard
■RoHS compliant*
■Leadless
■High speed
Applications
■Cellular phones
■PDAs
■Desktop PCs and notebooks
■Digital cameras
■MP3 players
General Information
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
smaller electronic components.
Bourns offers small-signal high-speed Switching Diodes for switching digital signal applications, in compact chip package 0603 and 1005 size
format, which offer PCB real estate savings and are considerably smaller than competitive parts. The Switching Diodes offer a forward current
of 100 mA or 150 mA, a reverse voltage of 80 V or 75 V and also have a low leakage reverse current option. The diodes are lead-free with
Cu/Ni/Au plated terminations and are compatible with lead-free manufacturing processes, conforming to many industry and government
regulations on lead-free components.
Bourns®Chip Diodes conform to JEDEC standards, easy to handle on standard pick and place equipment and their flat configuration makes
roll away much more difficult.
Parameter Symbol CDxxxx-S0180 CDxxxx-S01575 CDxxxx-S0180R Unit
Forward Voltage (Max.) VF1.00 1.00 1.00 V
(If= 100 mA) (If= 50 mA) (If= 100 mA)
Capacitance Between Terminals (Max.) CT4pF
(f = 100 MHz, Vr= 1 V DC)
Reverse Recovery Time (Max.) trr 4nS
(Vr= 6V, If= 10 mA, RL= 50 Ω)
Reverse Current (Max.) IR0.1 2.5 0.05 µA
(Vr= 80 V) (Vr= 75 V) (Vr= 75 V)
Electrical Characteristics (@ TA= 25 °C Unless Otherwise Noted)
Parameter Symbol CDxxxx-S0180 CDxxxx-S01575 CDxxxx-S0180R Unit
Repetitive Peak Reverse Voltage VRRM 90 100 90 V
Reverse Voltage VR80 75 80 V
Average Forward Current Io100 150 100 mA
Forward Current, Surge Peak Isurge 1* 4** 1* A
Power Dissipation - CD0603 PD 150 150 150 mW
Power Dissipation - CD1005 300 300 300
Storage Temperature TSTG -40 to +125 °C
Junction Temperature TJ-40 to +125 °C
Absolute Ratings (@ TA= 25 °C Unless Otherwise Noted)
* Condition: 8.3 ms single half sine-wave superimposed on rate load
(JEDEC method).
** Condition: 1.0 µs single half sine-wave superimposed on rate load
(JEDEC method).
How To Order
CD 0603 - S 01 80 R
Common Code
Chip Diode
Package
• 0603
• 1005
Model
S = High Speed Switching
Average Forward Current (Io) Code
01 = 100 mA
015 = 150 mA
(Code x 1000 mA = Average Forward Current)
Reverse Voltage (VR) Code
80 = 80 V
75 = 75 V
Reverse Current Suffix
R = Low Leakage IR(CDxxxx-S0180R)
*RoHS COMPLIANT
S3
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Switching Chip Diode Series - 0603 / 1005
Product Dimensions Recommended Pad Layout
Physical Specifications
Typical Part Marking
Case ....................................0603(1608) / 1005(2512) Molded plastic
Terminals ......................Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity ....................................................Indicated by cathode band
Mounting Position ........................................................................Any
CDxxxx-S0180 ................................................................................S1
CDxxxx-S01575 ..............................................................................S3
CDxxxx-S0180R ..............................................................................S2
MM
(INCHES)
DIMENSIONS:
A
C
B
Dimension 0603 1005
A (Max.) 1.25 2.00
(0.049) (0.079)
B (Min.) 1.00 1.3
(0.039) (0.051)
C (Min.) 0.6 0.7
(0.024) (0.028)
Dimension 0603 1005
A1.60 - 1.80 2.40 - 2.60
(0.063 - 0.071) (0.095 - 0.102)
B0.80 - 1.00 1.10 - 1.30
(0.031 - 0.039) (0.043 - 0.051)
C0.45 Typ. 0.50 Typ.
(0.018) (0.020)
D0.70 - 0.85 0.70 - 0.90
(0.027 - 0.033) (0.027 - 0.035)
E0.70 Typ. 1.00 Typ.
(0.028) (0.039)
A
B
C
D
E
MM
(INCHES)
DIMENSIONS:
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Switching Chip Diode Series - 0603 / 1005
Rating and Characteristic Curves: CDxxxx-S0180
Derating Curve Capacitance Between Terminals
Forward Characteristics Reverse Characteristics
1000
100
10
1
Forward Current (mAmps)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Forward Voltage (Volts)
125 °C 85 °C -25 °C
25 °C
0
0.1
1
10
100
Reverse Current (nA)
0 10203040506070 80
Reverse Voltage (Volts)
25 °C
85 °C
125 °C
120
100
80
60
40
20
0
0 25 50 75 100 125 150
I0 Current (%)
Ambient Temperature (°C)
Mounting on glass epoxy PCBs
5.0
4.0
3.0
2.0
1.0
0.0
0246 8101214
Capacitance Between Terminals (pF)
Reverse Voltage (Volts)
F = 100 MHz
Ta = 25 ° C
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Switching Chip Diode Series - 0603 / 1005
Rating and Characteristic Curves: CDxxxx-S01575
Derating Curve Capacitance Between Terminals
Forward Characteristics Reverse Characteristics
1000
100
1
Forward Current (mAmps)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Forward Voltage (Volts)
10
125 °C 85 °C -25 °C
25 °C
0
0.1
Reverse Current (nA)
1.0
10.0
100.0
0 1020304050607080
Reverse Voltage (Volts)
25 °C
85 °C
125 °C
120
100
80
60
40
20
0
0 25 50 75 100 125 150
I0 Current (%)
Ambient Temperature (°C)
Mounting on glass epoxy PCBs
5.0
4.0
3.0
2.0
1.0
0.0
0246 8101214
Capacitance Between Terminals (pF)
Reverse Voltage (Volts)
F = 100 MHz
Ta = 25 ° C
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Switching Chip Diode Series - 0603 / 1005
Rating and Characteristic Curves: CDxxxx-S0180R
Derating Curve Capacitance Between Terminals
Forward Characteristics Reverse Characteristics
1000
100
1
Forward Current (mAmps)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Forward Voltage (Volts)
10
125 °C 85 °C -25 °C
25 °C
0
0.1
Reverse Current (nA)
1.0
10.0
100.0
020406080
Reverse Voltage (Volts)
25 °C
85 °C
125 °C
120
100
80
60
40
20
0
0 25 50 75 100 125 150
I0 Current (%)
Ambient Temperature (°C)
Mounting on glass epoxy PCBs
5.0
4.0
3.0
2.0
1.0
0.0
0246 8101214
Capacitance Between Terminals (pF)
Reverse Voltage (Volts)
F = 100 MHz
Ta = 25 ° C
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Switching Chip Diode Series - 0603 / 1005
Packaging Information
The product will be dispensed in Tape and Reel format (see diagram below).
.......
.......
....... ..............
....... ..............
P A
F
ET
120 °
D2
DD
1
W1
C
Index Hole
P
0
P
1
W
B
10 pitches (min.)
Direction of Feed
10 pitches (min.)
End
Trailer Device Leader
Start
d
Item Symbol 0603 1005
Carrier Width A 1.00 ± 0.10 1.55 ± 0.10
(0.039 - 0.004) (0.061 - 0.004)
Carrier Length B 1.85 ± 0.10 2.65 ± 0.10
(0.073 - 0.004) (0.104 - 0.004)
Carrier Depth C 1.00 ± 0.10 1.05 ± 0.10
(0.039 - 0.004) (0.041 - 0.004)
Sprocket Hole d 1.55 ± 0.05 1.55 ± 0.10
(0.061 - 0.002) (0.061 - 0.004)
Reel Outside Diameter D 178 178
(7.008) (7.008)
Reel Inner Diameter D160.0 MIN. 60.0 MIN.
(2.362) (2.362)
Feed Hole Diameter D213.0 ± 0.20 13.0 ± 0.20
(0.512 - 0.008) (0.512 - 0.008)
Sprocket Hole Position E 1.75 ± 0.10 1.75 ± 0.10
(0.069 - 0.004) (0.069 - 0.004)
Punch Hole Position F 3.50 ± 0.05 3.50 ± 0.05
(0.138 - 0.002) (0.138 - 0.002)
Punch Hole Pitch P 4.00 ± 0.10 4.00 ± 0.10
(0.157 - 0.004) (0.157 - 0.004)
Sprocket Hole Pitch P04.00 ± 0.10 4.00 ± 0.10
(0.157 - 0.004) (0.157 - 0.004)
Embossment Center P12.00 ± 0.05 2.00 ± 0.05
(0.079 - 0.002) (0.079 - 0.002)
Overall Tape Thickness T 0.20 ± 0.05 0.25 ± 0.05
(0.008 - 0.002) (0.010 - 0.002)
Tape Width W 8.00 ± 0.20 8.00 ± 0.20
(0.315 - 0.008) (0.315 - 0.008)
Reel Width W113.5 MAX. 13.5 MAX.
(0.531) (0.531)
Quantity per Reel -- 4,000 4,000
Devices are packed in accordance with EIA standard
RS-481-A and specifications shown here.
MM
(INCHES)
DIMENSIONS:
REV. 10/09
