R6008FNJ Nch 600V 8A Power MOSFET Datasheet lOutline VDSS 600V RDS(on) (Max.) 0.95W ID 8A PD 50W LPTS (SC-83) (2) TO-263(D2PAK) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. *1 Body Diode 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant lPackaging specifications Packaging lApplication Taping Reel size (mm) 330 Tape width (mm) 24 Type Basic ordering unit (pcs) Switching Power Supply Taping code 1,000 TL Marking R6008FNJ lAbsolute maximum ratings(Ta = 25C) Parameter Symbol Value Unit VDSS 600 V Tc = 25C ID *1 8 A Tc = 100C ID *1 3.9 A 32 A Drain - Source voltage Continuous drain current Pulsed drain current ID,pulse *2 Gate - Source voltage VGSS 30 V Avalanche energy, single pulse EAS *3 4.3 mJ Avalanche energy, repetitive EAR *4 3.4 mJ Avalanche current IAR *3 4 A Power dissipation (Tc = 25C) PD 50 W Junction temperature Tj 150 C Tstg -55 to +150 C dv/dt *5 15 V/ns Range of storage temperature Reverse diode dv/dt www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 1/13 2012.07 - Rev.B Data Sheet R6008FNJ lAbsolute maximum ratings Parameter Symbol Conditions Values Unit 50 V/ns VDS = 480V, ID = 8A Drain - Source voltage slope dv/dt Tj = 125C lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. Thermal resistance, junction - case RthJC - - 2.5 C/W Thermal resistance, junction - ambient RthJA - - 80 C/W Soldering temperature, wavesoldering for 10s Tsold - - 265 C lElectrical characteristics(Ta = 25C) Values Parameter Symbol Conditions Unit Min. Typ. Max. 600 - - V - 700 - V Tj = 25C - 1 100 Tj = 125C - - 10 mA IGSS VGS = 30V, VDS = 0V - - 100 nA VGS (th) VDS = 10V, ID = 1mA 2.0 - 4.0 V - 0.73 0.95 W Tj = 125C - 1.62 - f = 1MHz, open drain - 8.0 - Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA Drain - Source avalanche breakdown voltage V(BR)DS VGS = 0V, ID = 8A VDS = 600V, VGS = 0V Zero gate voltage drain current Gate - Source leakage current Gate threshold voltage IDSS mA VGS = 10V, ID = 4A Static drain - source on - state resistance Gate input resistance www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. RDS(on) *6 Tj = 25C RG 2/13 W 2012.07 - Rev.B Data Sheet R6008FNJ lElectrical characteristics(Ta = 25C) Values Parameter Symbol Conditions Unit Min. Typ. Max. 2.5 5.0 - Transconductance gfs *6 VDS = 10V, ID = 4.0A, Input capacitance Ciss VGS = 0V - 580 - Output capacitance Coss VDS = 25V - 450 - Reverse transfer capacitance Crss f = 1MHz - 25 - Effective output capacitance, energy related Co(er) - 31.5 - Effective output capacitance, time related Turn - on delay time VGS = 0V VDS = 0V to 480V Co(tr) 31.8 - VDD 300V, VGS = 10V - 20 - ID = 4A - 25 - td(off) *6 RL = 75W - 60 120 tf *6 RG = 10W - 30 60 tr *6 Rise time Turn - off delay time Fall time pF pF - td(on) *6 S ns lGate Charge characteristics(Ta = 25C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Total gate charge Qg *6 VDD 300V - 20 - Gate - Source charge Qgs *6 ID = 8A - 5 - Gate - Drain charge Qgd *6 VGS = 10V - 10 - Gate plateau voltage V(plateau) VDD 300V, ID = 8A - 5.7 - nC V *1 Limited only by maximum temperature allowed. *2 Pw 10ms, Duty cycle 1% *3 L 500mH, VDD = 50V, RG = 25W, starting Tj = 25C *4 L 500mH, VDD = 50V, RG = 25W, starting Tj = 25C, f = 10kHz *5 Reference measurement circuits Fig.5-1. *6 Pulsed www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 3/13 2012.07 - Rev.B Data Sheet R6008FNJ lBody diode electrical characteristics (Source-Drain)(Ta = 25C) Values Parameter Symbol Inverse diode continuous, forward current Conditions Unit IS *1 Min. Typ. Max. - - 8 A - - 32 A - - 1.5 V - 67 - ns - 0.17 - mC - 4.9 - A - 610 - A/ms Tc = 25C Inverse diode direct current, pulsed ISM *2 Forward voltage VSD *6 VGS = 0V, IS = 8A trr *6 Reverse recovery time Reverse recovery charge Qrr *6 Peak reverse recovery current Irrm *6 Peak rate of fall of reverse recovery current dirr/dt IS = 8A di/dt = 100A/us Tj = 25C lTypical Transient Thermal Characteristics Symbol Value Rth1 0.118 Rth2 0.472 Rth3 0.583 www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. Unit K/W 4/13 Symbol Value Unit Cth1 0.0014 Cth2 0.00402 Cth3 0.174 Ws/K 2012.07 - Rev.B Data Sheet R6008FNJ lElectrical characteristic curves Fig.2 Maximum Safe Operating Area Fig.1 Power Dissipation Derating Curve 100 100 10 Drain Current : ID [A] Power Dissipation : PD/PD max. [%] 120 80 60 40 20 Operation in this area is limited by RDS(ON) PW = 100us 1 PW = 1ms 0.1 PW = 10ms Ta = 25C Single Pulse 0.01 0 0 50 100 150 0.1 200 1 10 100 1000 Drain - Source Voltage : VDS [V] Junction Temperature : Tj [C] Normalized Transient Thermal Resistance : r(t) Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width 1000 100 10 Ta = 25C Single Pulse Rth(ch-a)(t) = (t)xRth(ch-a) Rth(ch-a) = 80C/W 1 0.1 top D = 1 D = 0.5 D = 0.1 D = 0.05 D = 0.01 D = Single 0.01 0.001 0.0001 0.0001 0.01 1 100 Pulse Width : PW [s] www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 5/13 2012.07 - Rev.B Data Sheet R6008FNJ lElectrical characteristic curves Fig.4 Avalanche Current vs Inductive Load Fig.5 Avalanche Power Losses 6 5000 Ta = 25C VDD = 50V , RG = 25W VGF = 10V , VGR = 0V 4500 Avalanche Power Losses : PAR [W] Avalanche Current : IAR [A] 5 4 3 2 1 0 0.01 0.1 1 10 100 Coil Inductance : L [mH] Ta = 25C 4000 3500 3000 2500 2000 1500 1000 500 0 1.0E+04 1.0E+05 1.0E+06 Frequency : f [Hz] Fig.6 Avalanche Energy Derating Curve vs Junction Temperature Avalanche Energy : EAS / EAS max. [%] 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 Junction Temperature : Tj [C] www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 6/13 2012.07 - Rev.B Data Sheet R6008FNJ lElectrical characteristic curves Fig.8 Typical Output Characteristics(II) Fig.7 Typical Output Characteristics(I) 8.0 8 7.0 VGS=10.0V VGS=10.0V Drain Current : ID [A] 6 VGS=6.0V 5.0 Ta=25 pulsed 7 VGS=7.0V 6.0 Drain Current : ID [A] Ta=25 pulsed VGS=5.0V 4.0 3.0 2.0 VGS=4.5V 1.0 VGS=7.0V 5 VGS=6.0V 4 VGS=5.0V 3 2 VGS=4.5V 1 0.0 0 0 10 20 30 40 50 0 2 3 4 5 Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V] Fig.10 Tj = 150C Typical Output Characteristics(II) Fig.9 Tj = 150C Typical Output Characteristics(I) 4 8 VGS = 10V Ta = 150C Pulsed 7 VGS = 7.0V 6 VGS = 5.5V VGS = 10V VGS = 6.0V Drain Current : ID [A] Drain Current : ID [A] 1 5 VGS = 5.0V 4 3 2 VGS = 4.5V 1 Ta = 150C Pulsed 0 VGS = 7.0V VGS = 6.0V 2 VGS = 5.0V VGS = 4.5V 0 0 10 20 30 40 50 0 2 3 4 5 Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V] www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 1 7/13 2012.07 - Rev.B Data Sheet R6008FNJ lElectrical characteristic curves Fig.12 Typical Transfer Characteristics 900 100 VDS = 10V Pulsed 850 10 Drain Current : ID [A] 800 750 700 650 600 Ta = 125C Ta = 75C Ta = 25C Ta = -25C 1 0.1 0.01 550 500 0.001 -50 0 50 100 150 0.0 1.5 Junction Temperature : Tj [C] 3.0 4.5 6.0 Gate - Source Voltage : VGS [V] Fig.13 Gate Threshold Voltage vs. Junction Temperature Fig.14 Transconductance vs. Drain Current 6 10 5 VDS = 10V ID = 1mA VDS = 10V Pulsed Transconductance : gfs [S] Gate Threshold Voltage : VGS(th) [V] Drain - Source Breakdown Voltage : V(BR)DSS [V] Fig.11 Breakdown Voltage vs. Junction Temperature 4 3 2 1 0 -50 0 50 100 Junction Temperature : Tj [C] www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 1 0.1 0.01 0.01 150 Ta = -25C Ta = 25C Ta = 75C Ta = 125C 0.1 1 10 100 Drain Current : ID [A] 8/13 2012.07 - Rev.B Data Sheet R6008FNJ lElectrical characteristic curves Fig.15 Static Drain - Source On - State Resistance vs. Gate Source Voltage Fig.16 Static Drain - Source On - State Resistance vs. Junction Temperature 3 Ta = 25C Pulsed 1.5 ID= 8.0A 1 ID= 4.0A 0.5 0 0 5 10 15 Static Drain - Source On-State Resistance : RDS(on) [W] Static Drain - Source On-State Resistance : RDS(on) [W] 2 Gate - Source Voltage : VGS [V] 2.5 VGS = 10V Pulsed 2 1.5 ID= 8.0A 1 ID= 4.0A 0.5 0 -50 0 50 100 150 Junction Temperature : Tj [C] Fig.17 Static Drain - Source On - State Resistance vs. Drain Current Static Drain - Source On-State Resistance : RDS(on) [W] 10 VGS = 10V Pulsed 1 Ta = 125C Ta = 75C Ta = 25C Ta = -25C 0.1 0.1 1 10 Drain Current : ID [A] www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 9/13 2012.07 - Rev.B Data Sheet R6008FNJ lElectrical characteristic curves Fig.18 Typical Capacitance vs. Drain - Source Voltage Fig.19 Coss Stored Energy 10000 6 Ciss 1000 Capacitance : C [pF] Coss Stored Energy : EOSS [uJ] Ta = 25C Coss 100 Crss 10 Ta= 25 f= 1MHz VGS= 0V 4 2 0 1 0.01 0.1 1 10 100 0 1000 Drain - Source Voltage : VDS [V] 400 600 Drain - Source Voltage : VDS [V] Fig.21 Dynamic Input Characteristics Fig.20 Switching Characteristics 15 10000 tf Gate - Source Voltage : VGS [V] Ta= 25 VDD= 300V VGS= 10V RG= 10W 1000 Switching Time : t [ns] 200 100 td(off) 10 td(on) tr 10 5 Ta= 25 VDD= 300V ID= 8.0A Pulsed 0 1 0.1 1 10 0 100 20 30 Total Gate Charge : Qg [nC] Drain Current : ID [A] www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 10 10/13 2012.07 - Rev.B Data Sheet R6008FNJ Fig.22 Inverse Diode Forward Current vs. Source - Drain Voltage Fig.23 Reverse Recovery Time vs.Inverse Diode Forward Current 100 1000 VGS= 0V Pulsed Reverse Recovery Time : trr [ns] Inverse Diode Forward Current : IS [A] lElectrical characteristic curves 10 1 Ta = 125C Ta = 75C Ta = 25C Ta = -25C 0.1 Ta= 25 di / dt= 100A / ms VGS= 0V Pulsed 100 10 0.01 0 0.5 1 1.5 0.1 2 Source - Drain Voltage : VSD [V] www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 1 10 100 Inverse Diode Forward Current : IS [A] 11/13 2012.07 - Rev.B Data Sheet R6008FNJ lMeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform Fig.4-1 dv/dt Measurement Circuit Fig.4-2 dv/dt Waveform Fig.5-1 di/dt Measurement Circuit Fig.5-2 di/dt Waveform www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 12/13 2012.07 - Rev.B Data Sheet R6008FNJ lDimensions (Unit : mm) D A2 A B L2 c1 E L3 LPTS H A1 L4 Lp b2 e b L1 L b3 x c A3 B A l3 l1 e b6 b5 l2 Patterm of terminal position areas DIM A1 A2 A3 b b2 b3 c c1 D E e HE L L1 L2 L3 L4 Lp x DIM b5 b6 l1 l2 l3 MILIMETERS MIN MAX 0.00 0.30 4.30 4.70 0.25 0.68 0.98 8.90 1.14 1.44 0.30 0.60 1.10 1.50 9.80 10.40 8.80 9.20 2.54 12.80 13.40 2.70 3.30 0.90 1.50 1.10 7.25 1.00 0.90 1.50 0.25 MILIMETERS MIN MAX 1.23 10.40 2.10 7.55 13.40 INCHES MIN 0 0.169 MAX 0.012 0.185 0.01 0.027 0.039 0.35 0.045 0.012 0.043 0.386 0.346 0.057 0.024 0.059 0.409 0.362 0.10 0.504 0.106 0.035 0.528 0.13 0.059 0.043 0.285 0.039 0.035 - 0.059 0.01 INCHES MIN - MAX 0.049 0.409 0.083 0.297 0.528 Dimension in mm/inches www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 13/13 2012.07 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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