TGF3020-SM 4 - 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor Product Overview The Qorvo TGF3020-SM is a 5W (P3dB), 50-input matched discrete GaN on SiC HEMT which operates from 4.0 to 6.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in an industry-standard 3 x 3 mm surface mount QFN package. 3 x 3mm QFN package Lead-free and ROHS compliant Evaluation boards are available upon request. Key Features Functional Block Diagram 16 15 14 13 1 12 * * * * * * Frequency: 4 to 6 GHz Output Power (P3dB)1: 6.8 W Linear Gain1: 13 dB Typical PAE3dB1: 60% Operating Voltage: 32 V CW and Pulse capable Note 1: @ 5 GHz Load Pull 2 11 Input Matching NW 3 10 4 9 5 6 7 8 Applications * * * * * * Telemetry C-band radar Communications Test instrumentation Wideband amplifiers 5.8GHz ISM Ordering info Part No. ECCN Description TGF3020-SM TGF3020SMEVBP01 TGF3020SMEVBP02 EAR99 QFN Packaged Part EAR99 5.3 - 5.9 GHz EVB EAR99 4 - 6 GHz EVB Datasheet Rev. B, October 24, 2017 | Subject to change without notice - 1 of 24 - www.qorvo.com TGF3020-SM 4 - 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor Recommended Operating Conditions1 Absolute Maximum Ratings1 Parameter Breakdown Voltage,BVDG Gate Voltage Range, VG Drain Current, IDMAX Gate Current Range, IG Power Dissipation, PDISS2 RF Input Power, CW, T = 25 C Channel Temperature, TCH Mounting Temperature (30 Seconds) Storage Temperature Rating Units +100 -7 to +2.0 0.6 See page 16. 7.5 V V A mA W +30 dBm 275 C 320 C -65 to +150 C Notes: 1. Operation of this device outside the parameter ranges given above may cause permanent damage. 2. Pulsed 100uS PW, 20% DC Parameter Min Typ Max Units Operating Temp. Range Drain Voltage Range, VD Drain Bias Current, IDQ Drain Current, ID4 Gate Voltage, VG3 Channel Temperature (TCH) Power Dissipation (PD)2,4 Power Dissipation (PD), CW 2 -40 +12 +25 +32 25 0.25 -2.8 - - - +85 +40 - - - - - - - 225 9.1 6.5 C V mA A V C W W Notes: 1. Electrical performance is measured under conditions noted in the electrical specifications table. Specifications are not guaranteed over all recommended operating conditions. 2. Package base at 85 C 3. To be adjusted to desired IDQ 4. Pulsed, 100uS PW, 20% DC Measured Load Pull Performance - Power Tuned1, 2 Typical Values Parameter Units Frequency, F 4 4.4 5 5.5 Drain Voltage, VD 32 32 32 32 V Drain Bias Current, IDQ Output Power at 3dB compression, P3dB Power Added Efficiency at 3dB compression, PAE3dB Gain at 3dB compression, G3dB 25 25 25 25 mA 38.4 38.3 38.3 38.2 dBm 50.1 50.4 49.5 53.0 % 9.6 9.7 9.7 10.3 dB Notes: 1. 2. GHz Pulsed, 100 uS Pulse Width, 20% Duty Cycle Load-pull characteristic Impedance, Zo = 50 . Measured Load Pull Performance - Efficiency Tuned1, 2 Parameter Frequency, F Typical Values Units 2.7 2.9 3.1 3.3 GHz Drain Voltage, VD 32 32 32 32 V Drain Bias Current, IDQ Output Power at 3dB compression, P3dB Power Added Efficiency at 3dB compression, PAE3dB Gain at 3dB compression, G3dB 25 25 25 25 mA 37.6 36.8 37.1 36.8 dBm 60.1 61.5 59.6 59 % 10.3 10.3 10.1 10.7 dB Notes: 1. 2. Pulsed, 100 uS Pulse Width, 20% Duty Cycle Load-pull characteristic Impedance, Zo = 50 . Datasheet Rev. B, October 24, 2017 | Subject to change without notice - 2 of 24 - www.qorvo.com TGF3020-SM 4 - 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor RF Characterization 5.3 - 5.9 GHz EVB - 5.4 GHz Performance1 Parameter Linear Gain, GLIN Output Power at 3dB compression point, P3dB Drain Efficiency at 3dB compression point, DEFF3dB Gain at 3dB compression point, G3dB Min Typ Max Units - - 11.7 5.7 - - dB W - 53.1 - % - 8.7 - dB Notes: 1. VD = +32 V, IDQ = 25 250mA, mA,Temp Temp==+25 +25C, C,Pulse PulseWidth Width==100 100uS, uS,Duty DutyCycle Cycle==20% 20% RF Characterization 4 - 6.0 GHz EVB - 4.7 GHz Performance1 Parameter Linear Gain, GLIN Output Power at 3dB compression point, P3dB Drain Efficiency at 3dB compression point, DEFF3dB Gain at 3dB compression point, G3dB Min Typ Max Units - - 11.8 5.6 - - dB W - 51.7 - % - 8.8 - dB Notes: 1. VD = +32 V, IDQ = 25 mA, Temp = +25 C, Pulse Width = 100 uS, Duty Cycle = 20% RF Characterization - Mismatch Ruggedness at 5.3 and 5.9 GHz Symbol Parameter VSWR Impedance Mismatch Ruggedness dB Compression Typical 3 10:1 Test conditions unless otherwise noted: TA = 25 C, VD = 32 V, IDQ = 25 mA Input drive power is determined at pulsed 3dB compression under matched condition at EVB output connector. Datasheet Rev. B, October 24, 2017 | Subject to change without notice - 3 of 24 - www.qorvo.com TGF3020-SM 4 - 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor Measured Load-Pull Smith Charts1, 2 Notes: 1. Test Conditions: VD = 32 V, IDQ = 25 mA, 100 uS Pulse Width, 20% Duty Cycle 2. See page 17 for load pull reference planes where the performance was measured. 4GHz, Load-pull Zs(1fo) = 23.25-20.34i Zs(2fo) = 21.61+5.89i * Max Power is 38.4dBm at Z = 24.344+16.398i = -0.2827+0.2829i * Max Gain is 10.3dB at Z = 17.146+29.144i = -0.2532+0.5439i * Max PAE is 60.1% at Z = 17.146+29.144i = -0.2532+0.5439i 10 58.7 9.5 9 52.7 50.7 48.7 38.4 38.2 Zo = 50 3dB Compression Referenced to Peak Gain Datasheet Rev. B, October 24, 2017 | Subject to change without notice - 4 of 24 - 1.2 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 38 Power Gain PAE www.qorvo.com TGF3020-SM 4 - 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor Measured Load-Pull Smith Charts1, 2 Notes: 1. Test Conditions: VD = 32 V, IDQ = 25 mA, 100 uS Pulse Width, 20% Duty Cycle 2. See page 17 for load pull reference planes where the performance was measured. 4.4GHz, Load-pull 0.5 Zs(1fo) = 24-22.43i Zs(2fo) = 42.06-1.87i * Max Power is 38.3dBm at Z = 24.314+16.373i = -0.2833+0.2827i * Max Gain is 10.3dB at Z = 15.641+24.03i = -0.3434+0.4918i * Max PAE is 61.5% at Z = 10.956+24.122i = -0.4184+0.5613i 60.7 9.81 50.7 52.7 48.7 9.31 38.1 8.81 37.9 Zo = 50 3dB Compression Referenced to Peak Gain Datasheet Rev. B, October 24, 2017 | Subject to change without notice - 5 of 24 - Power Gain PAE 1.2 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 37.7 www.qorvo.com TGF3020-SM 4 - 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor Measured Load-Pull Smith Charts1, 2 Notes: 1. Test Conditions: VD = 32 V, IDQ = 25 mA, 100 uS Pulse Width, 20% Duty Cycle 2. See page 17 for load pull reference planes where the performance was measured. 5GHz, Load-pull Zs(1fo) = 24.62-23.64i Zs(2fo) = 51.59+26.01i * Max Power is 38.3dBm at Z = 22.515+10.159i = -0.3525+0.1895i * Max Gain is 10.3dB at Z = 14.48+19.192i = -0.4247+0.424i * Max PAE is 59.6% at Z = 9.755+15.964i = -0.562+0.4173i 10.3 57.8 47.8 49.8 51.8 9.75 9.25 38.3 38.1 Zo = 50 3dB Compression Referenced to Peak Gain Datasheet Rev. B, October 24, 2017 | Subject to change without notice - 6 of 24 - 1.2 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 37.9 Power Gain PAE www.qorvo.com TGF3020-SM 4 - 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor Measured Load-Pull Smith Charts1, 2 Notes: 1. Test Conditions: VD = 32 V, IDQ = 25 mA, 100 uS Pulse Width, 20% Duty Cycle 2. See page 17 for load pull reference planes where the performance was measured. 5.5GHz, Load-pull Zs(1fo) = 26.09-30.79i Zs(2fo) = 53.69+46.74i 10.6 * Max Power is 38.2dBm at Z = 17.137+7.844i = -0.4694+0.1717i * Max Gain is 10.7dB at Z = 9.368+12.204i = -0.6161+0.3322i * Max PAE is 59% at Z = 9.368+12.204i = -0.6161+0.3322i 56.9 52.9 54.9 34.9 10.1 38.1 9.58 37.9 Zo = 50 3dB Compression Referenced to Peak Gain Datasheet Rev. B, October 24, 2017 | Subject to change without notice - 7 of 24 - 1.2 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 37.7 Power Gain PAE www.qorvo.com TGF3020-SM 4 - 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor Typical Measured Performance - Load-Pull Drive-up1, 2 Notes: 1. Pulsed signal with 100uS pulse width and 20% duty cycle 2. See page 17 for load pull and source pull reference planes. Gain and PAE vs. Output Power 4 GHz - Power Tuned 14 70 Gain 65 PAE 60 13 45 13 55 12 40 12 35 30 11 45 10 40 9 25 9 35 8 20 8 30 7 15 7 25 6 27 28 29 30 31 32 33 34 35 Output Power [dBm] 36 37 38 6 27 10 39 28 29 Gain and PAE vs. Output Power 4.4 GHz - Power Tuned 30 31 32 33 34 Output Power [dBm] 35 36 37 20 38 Gain and PAE vs. Output Power 4.4 GHz - Efficiency Tuned 60 16 70 15 55 15 65 14 50 14 60 13 45 13 55 12 11 10 40 Zs(1fo) = 24-22.43i Zs(2fo) = 42.06-1.87i Zl(1fo) = 24.31+16.37i 35 30 9 Gain PAE 8 7 6 27 28 29 30 31 32 33 34 35 Output Power [dBm] 36 37 38 Gain [dB] 16 PAE [%] Gain [dB] 50 Zs(1fo) = 23.25-20.34i Zs(2fo) = 21.61+5.89i Zl(1fo) = 17.15+29.14i 12 11 10 25 9 20 8 15 7 10 39 Datasheet Rev. B, October 24, 2017 | Subject to change without notice - 8 of 24 - 6 27 50 Zs(1fo) = 24-22.43i Zs(2fo) = 42.06-1.87i Zl(1fo) = 10.96+24.12i 45 40 PAE [%] 10 Zs(1fo) = 23.25-20.34i Zs(2fo) = 21.61+5.89i Zl(1fo) = 24.34+16.4i Gain [dB] Gain [dB] 11 15 PAE [%] 16 14 60 Gain PAE 55 50 15 PAE [%] 16 Gain and PAE vs. Output Power 4 GHz - Efficiency Tuned 35 Gain PAE 28 29 30 31 32 33 34 Output Power [dBm] 35 36 37 30 25 20 38 www.qorvo.com TGF3020-SM 4 - 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor Typical Measured Performance - Load-Pull Drive-up1, 2 Notes: 1. Pulsed signal with 100uS pulse width and 20% duty cycle 2. See page 17 for load pull and source pull reference planes. 16 14 60 Gain PAE 55 50 14 70 Gain PAE 65 60 13 45 13 55 12 40 12 Zs(1fo) = 24.62-23.64i 11 Zs(2fo) = 51.59+26.01i Zl(1fo) = 22.52+10.16i 30 11 10 45 40 9 25 9 8 20 8 30 7 15 7 25 6 27 28 29 30 31 32 33 34 35 Output Power [dBm] 36 37 38 6 27 10 39 28 29 Gain and PAE vs. Output Power 5.5 GHz - Power Tuned 30 31 32 33 34 Output Power [dBm] 35 36 37 35 20 38 Gain and PAE vs. Output Power 5.5 GHz - Efficiency Tuned 60 16 70 15 55 15 65 14 50 14 60 13 45 13 12 40 12 11 Zs(1fo) = 26.09-30.79i Zs(2fo) = 53.69+46.74i Zl(1fo) = 17.14+7.84i 35 10 30 9 8 7 6 27 28 29 30 31 32 33 34 35 Output Power [dBm] 36 37 Gain [dB] 16 PAE [%] Gain [dB] 50 Zs(1fo) = 24.62-23.64i Zs(2fo) = 51.59+26.01i Zl(1fo) = 9.76+15.96i 11 55 50 Zs(1fo) = 26.09-30.79i Zs(2fo) = 53.69+46.74i Zl(1fo) = 9.37+12.2i 45 10 40 25 9 Gain 20 PAE 15 8 35 Gain 30 PAE 25 38 10 39 Datasheet Rev. B, October 24, 2017 | Subject to change without notice - 9 of 24 - 7 6 27 28 29 30 31 32 33 34 Output Power [dBm] 35 36 37 PAE [%] 10 35 15 Gain [dB] Gain [dB] 15 PAE [%] 16 PAE [%] Gain and PAE vs. Output Power 5 GHz - Efficiency Tuned Gain and PAE vs. Output Power 5 GHz - Power Tuned 20 38 www.qorvo.com TGF3020-SM 4 - 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor Power Driveup Performance Over Temperatures Of 5.3 - 5.9 GHz EVB1, 2 Notes: 1. Test Conditions: VD = 32 V, IDQ = 25 mA, 20 uS Pulse Width, 20% Duty Cycle 2. The dissipation power limit is conservative because it is specified at DUT only without accounting for the loss of the output matching network. P3dB Over Temperatures 10 -40C -20C 0C 25C 45C 65C 85C 8 P3dB [W] 7 6 90 80 70 DrainEff3dB [%] 9 Drain Efficiency @ 3dB Over Temperatures 100 5 4 3 60 50 40 -40C -20C 0C 25C 45C 65C 85C 30 20 2 10 1 0 0 5.3 5.4 5.5 5.6 5.7 5.8 5.3 5.9 5.4 5.5 G3dB Over Temperatures 15 5.7 5.8 5.9 PDISS3dB Over Temperatures 10 -40C -20C 0C 25C 45C 65C 85C 13 12 11 -40C -20C 0C 25C 45C 65C 9 8 85C PDISS3dB [W] 14 G3dB [dB] 5.6 Frequency [GHz] Frequency [GHz] 10 9 8 7 6 5 4 3 7 2 6 1 5 5.3 5.4 5.5 5.6 5.7 5.8 5.9 0 5.3 Frequency [GHz] Datasheet Rev. B, October 24, 2017 | Subject to change without notice - 10 of 24 - 5.4 5.5 5.6 5.7 5.8 5.9 Frequency [GHz] www.qorvo.com TGF3020-SM 4 - 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor Power Driveup Performance At 25C Of 5.3 - 5.9 GHz EVB1, 2 Notes: 1. Test Conditions: VD = 32 V, IDQ = 25 mA, 20 uS Pulse Width, 20% Duty Cycle 2. The dissipation power limit is conservative because it is specified at DUT only without accounting for the loss of the output matching network.. P3dB and G3dB at 25C 3dB Drain Efficiency at 25C 100 9.0 14 90 8.0 13 80 7.0 12 70 6.0 11 5.0 10 4.0 9 3.0 8 30 7 20 1.0 6 10 0.0 5 0 G3dB 5.3 5.4 5.5 5.6 5.7 5.8 G3dB [dB] P3dB 2.0 DrainEff3dB [%] 15 P3dB [W] 10.0 5.9 60 50 40 5.3 5.4 5.5 5.6 5.7 5.8 5.9 Frequency [GHz] Frequency [GHz] PDISS3dB Over at 25C 10 9 PDISS3dB [W] 8 7 6 5 4 3 2 1 0 5.3 5.4 5.5 5.6 5.7 5.8 5.9 Frequency [GHz] Datasheet Rev. B, October 24, 2017 | Subject to change without notice - 11 of 24 - www.qorvo.com TGF3020-SM 4 - 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor Power Driveup Performance At 25C Of 4 - 6 GHz EVB1, 2 Notes: 1. Test Conditions: VD = 32 V, IDQ = 25 mA, 100 uS Pulse Width, 20% Duty Cycle 2. The dissipation power limit is conservative because it is specified at DUT only without accounting for the loss of the output matching network.. 3dB Drain Efficiency at 25C P3dB and G3dB at 25C 100 9.0 14 90 8.0 13 80 7.0 12 70 6.0 11 5.0 10 4.0 9 3.0 P3dB 8 30 2.0 G3dB 7 20 6 10 5 0 0.0 4 4.2 4.4 4.6 4.8 5 5.2 5.4 5.6 5.8 G3dB [dB] 1.0 DrainEff3dB [%] 15 P3dB [W] 10.0 60 50 40 6 4 4.2 4.4 4.6 Frequency [GHz] 4.8 5 5.2 5.4 5.6 5.8 6 Frequency [GHz] PDISS3dB at 25C 10 9 8 PDISS3dB [W] 7 6 5 4 3 2 1 0 4 4.2 4.4 4.6 4.8 5 5.2 5.4 5.6 5.8 6 Frequency [GHz] Datasheet Rev. B, October 24, 2017 | Subject to change without notice - 12 of 24 - www.qorvo.com TGF3020-SM 4 - 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor Thermal and Reliability Information - Pulsed1, 2 Maximum Channel Temperature QFN base fixed at 85 oC, Pdiss = 7.6 W 260 250 Maximum Channel Temperature (oC) 240 230 5% Duty Cycle 10% Duty Cycle 20% Duty Cycle 50% Duty Cycle 220 210 200 190 180 170 160 150 140 130 120 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 Pulse Width (sec) Parameter Thermal Resistance, FEA (JC) Peak Channel Temperature, FEA (TCH) Median Lifetime, FEA (TM)2 Peak Channel Temperature, IR Thermal Resistance, FEA (JC) Peak Channel Temperature, FEA (TCH) Median Lifetime, FEA (TM)2 Peak Channel Temperature, IR Thermal Resistance, FEA (JC) Peak Channel Temperature, FEA (TCH) Median Lifetime, FEA (TM)2 Peak Channel Temperature, IR Thermal Resistance, FEA (JC) Peak Channel Temperature, FEA (TCH) Median Lifetime, FEA (TM)2 Peak Channel Temperature, IR Note: Conditions 85 C Case 7.6 W Pdiss, 100 uS PW, 5% DC 85 C Case 7.6 W Pdiss, 100 uS PW, 10% DC 85 C Case 7.6 W Pdiss, 100 uS PW, 20% DC 85 C Case 7.6 W Pdiss, 100 uS PW, 50% DC Values 15.0 199 1.7E7 160 15.4 202 1.3E7 162 16.1 207 8.4E6 165 18.0 222 2.3E6 173 Units C/W C Hrs C C/W C Hrs C C/W C Hrs C C/W C Hrs C 1. FEA: Finite Element Analysis Method, IR: Infra-Red Method 2. Median Lifetime under pulsed condition is that under CW condition divided by duty cycle. Datasheet Rev. B, October 24, 2017 | Subject to change without notice - 13 of 24 - www.qorvo.com TGF3020-SM 4 - 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor Thermal and Reliability Information - CW1 Peak Temperature vs. CW Power - QFN base = 85C 260 250 240 230 220 Peak Temperature, C 210 200 190 180 170 160 150 140 130 120 110 100 90 80 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 CW Power Dissipation, W Parameter Thermal Resistance, FEA (JC) Peak Channel Temperature, FEA (TCH) Median Lifetime, FEA (TM)2 Peak Channel Temperature, IR Thermal Resistance, FEA (JC) Peak Channel Temperature, FEA (TCH) Median Lifetime, FEA (TM)2 Peak Channel Temperature, IR Thermal Resistance, FEA (JC) Peak Channel Temperature, FEA (TCH) Median Lifetime, FEA (TM)2 Peak Channel Temperature, IR Thermal Resistance, FEA (JC) Peak Channel Temperature, FEA (TCH) Median Lifetime, FEA (TM)2 Peak Channel Temperature, IR Note: Conditions 85 C Case 2.52 W Pdiss 85 C Case 3.78 W Pdiss 85 C Case 5.04 W Pdiss 85 C Case 6.30 W Pdiss Values Units 17.9 130 2.7E10 116 18.8 156 1.3E9 133 19.8 185 6.5E7 152 21.1 218 3.3E6 171 C/W C Hrs C C/W C Hrs C C/W C Hrs C C/W C Hrs C 1. FEA: Finite Element Analysis Method, IR: Infra-Red Method Datasheet Rev. B, October 24, 2017 | Subject to change without notice - 14 of 24 - www.qorvo.com TGF3020-SM 4 - 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor Median Lifetime1 Notes: 1. Test Conditions: VD = +32 V; Failure Criteria = 10 % reduction in ID_MAX during DC Life Testing . Datasheet Rev. B, October 24, 2017 | Subject to change without notice - 15 of 24 - www.qorvo.com TGF3020-SM 4 - 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor Maximum Gate Current Maximum Gate Current Vs. Channel Temperature 10 Maximum Gate Current [mA] 9 8 7 6 5 4 3 2 1 0 120 130 140 150 160 170 180 190 200 210 220 230 Channel Temperature [C] Datasheet Rev. B, October 24, 2017 | Subject to change without notice - 16 of 24 - www.qorvo.com TGF3020-SM 4 - 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor Pin Configuration and Description1 Note 1: The TGF3020-SM will be marked with the "TGF3020" designator and a lot code marked below the part designator. The "YY" represents the last two digits of the calendar year the part was manufactured, the "WW" is the work week of the assembly lot start, the MXXX" is the production lot number. Pin Symbol Description 2, 3 RF IN / VG Gate 10, 11 RF OUT / VD Drain 1, 4, 5, 6, 7, 8, 9, 12, 13, 14, 15, 16 NC No Connection1 Source Source / Ground / Backside of part Note 1: Grounding pin 6 will cause performance degradation. Datasheet Rev. B, October 24, 2017 | Subject to change without notice - 17 of 24 - www.qorvo.com TGF3020-SM 4 - 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor Mechanical Drawing1 Note 1: Unless otherwise noted, all dimention tolerances are +/-0.127 mm. This package is lead-free/RoHS-compliant. The plating material on the leads is NiAu. It is compatible with both lead-free (maximum 260 C reflow temperature) and tin-lead (maximum 245C reflow temperature) soldering processes. Datasheet Rev. B, October 24, 2017 | Subject to change without notice - 18 of 24 - www.qorvo.com TGF3020-SM 4 - 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor 5.3 - 5.9 GHz Application Circuit - Schematic Bias-up Procedure 1. Set VG to -3.5 V. 2. Set ID current limit to 30 mA. 3. Apply 32 V VD. 4. Slowly adjust VG until ID is set to 25 mA. 5. Set ID current limit to 0.3 A (Pulsed operation.) 6. Apply RF. Bias-down Procedure 1. Turn off RF signal. 2. Turn off VD 3. Wait 2 seconds to allow drain capacitor to discharge. 4. Turn off VG Datasheet Rev. B, October 24, 2017 | Subject to change without notice - 19 of 24 - www.qorvo.com TGF3020-SM 4 - 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor 3.1 - 3.5 GHz Application Circuit - Layout Board material is RO4350B 0.020" thickness with 1oz copper cladding. Overall EVB size is 2" x 2.5". 3.1 - 3.5 GHz Application Circuit - Bill of Materials Reference Design R1 R2 C1, C5 C2 C3, C4 C6, C7, C8 C11 C9 C10 L1 L2 Value 10 1 k 0.2 pF 0.3 pF 5.1 pF 3.3 pF 220 uF 10 uF 1 uF 3.9nH 2.2nH Qty 1 1 2 1 2 3 1 1 1 1 1 Manufacturer Part Number PPI PPI PPI PPI United Chemicon TDK AVX CoilCraft CoilCraft Generic 0603 Generic 0603 0603N0R2AW251X 0603N0R3AW251X 0603N5R1AW251X 0603N3R3AW251X EMVY500ADA221MJA0G C1632X5R0J106M130AC 18121C105KAT2A 0603CS-3N9X_E 0603CS-2N2X_E Datasheet Rev. B, October 24, 2017 | Subject to change without notice - 20 of 24 - www.qorvo.com TGF3020-SM 4 - 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor 4 - 6 GHz Application Circuit - Schematic Bias-up Procedure 2. Set VG to -4 V. 4. Set ID current limit to 30 mA. 5. Apply 32 V VD. 6. Slowly adjust VG until ID is set to 25 mA. 8. Set ID current limit to 0.3 A (Pulsed operation.) 9. Apply RF. Bias-down Procedure 3. Turn off RF signal. 4. Turn off VD 5. Wait 2 seconds to allow drain capacitor to discharge. 7. Turn off VG Datasheet Rev. B, October 24, 2017 | Subject to change without notice - 21 of 24 - www.qorvo.com TGF3020-SM 4 - 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor 4 - 6 GHz Application Circuit - Layout Board material is RO4350B 0.020" thickness with 1oz copper cladding. Overall EVB size is 2" x 2.5". 4 - 6 GHz Application Circuit - Bill of Materials Reference Design R1 R2 C1 C2 C3 C4 C6, C7, C8 C11 C9 C10 L1 L2 Value 10 1 k 0.2 pF 0.3 pF 5.1 pF 10 pF 3.3 pF 220 uF 10 uF 1 uF 3.9nH 1.8nH Qty 1 1 1 1 1 1 3 1 1 1 1 1 Manufacturer Part Number PPI PPI PPI PPI PPI United Chemicon TDK AVX CoilCraft CoilCraft Generic 0603 Generic 0603 0603N0R2AW251X 0603N0R3AW251X 0603N5R1AW251X 0603N100AW251X 0603N3R3AW251X EMVY500ADA221MJA0G C1632X5R0J106M130AC 18121C105KAT2A 0603CS-3N9X_E 0603CS-1N8X_E Datasheet Rev. B, October 24, 2017 | Subject to change without notice - 22 of 24 - www.qorvo.com TGF3020-SM 4 - 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor Recommended Solder Temperature Profile Datasheet Rev. B, October 24, 2017 | Subject to change without notice - 23 of 24 - www.qorvo.com TGF3020-SM 4 - 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor Handling Precautions Parameter Rating Standard ESD - Human Body Model (HBM) Class 1B ESDA / JEDEC JS-001-2012 ESD - Charged Device Model (CDM) Class C3 JEDEC JESD22-C101F MSL - Moisture Sensitivity Level 3 @ 260C IPC/JEDEC J-STD-020 Caution! ESD-Sensitive Device Solderability Compatible with both lead-free (260C max. reflow temp.) and tin/lead (245C max. reflow temp.) soldering processes. Solder profiles available upon request. Contact plating: NiPdAu RoHS Compliance This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment) as amended by Directive 2015/863/EU. This product also has the following attributes: * Lead Free * Halogen Free (Chlorine, Bromine) * Antimony Free * TBBP-A (C15H12Br402) Free * PFOS Free * SVHC Free Pb Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about Qorvo: Web: www.Qorvo.com Email: info-sales@qorvo.com Tel: Fax: For technical questions and application information: +1.972.994.8465 +1.972.994.8504 Email: info-products@qorvo.com Important Notice The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Copyright 2016 (c) Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc. Datasheet Rev. B, October 24, 2017 | Subject to change without notice - 24 of 24 - www.qorvo.com