IRFH5007PbF
www.irf.com © 2013 International Rectifier September 6, 2013
2
S
D
G
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 75 ––– ––– V
∆ΒV
DSS
∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.09 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 5.1 5.9
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V
∆V
GS(th)
Gate Threshold Voltage Coefficient ––– -8.4 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 20
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 100 ––– ––– S
Q
g
Total Gate Charge ––– 65 98
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 11 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 4.5 –––
Q
gd
Gate-to-Drain Charge ––– 20 –––
Q
godr
Gate Charge Overdrive ––– 29.5 ––– See Fig.17 & 18
Q
sw
Switch Char
e (Q
gs2
+ Q
gd
)––– 24.5 –––
Q
oss
Output Charge ––– 21 ––– nC
R
G
Gate Resistance ––– 1.2 ––– Ω
t
d(on)
Turn-On Delay Time ––– 10 –––
t
r
Rise Time ––– 14 –––
t
d(off)
Turn-Off Delay Time ––– 30 –––
t
f
Fall Time ––– 11 –––
C
iss
Input Capacitance ––– 4290 –––
C
oss
Output Capacitance ––– 510 –––
C
rss
Reverse Transfer Capacitance ––– 210 –––
Avalanche Characteristics
Parameter Units
E
AS
Sin
le Pulse Avalanche Ener
y
d
mJ
I
AR
Avalanche Current
c
A
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
h
I
SM
Pulsed Source Current
(Body Diode)
c
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 31 47 ns
Q
rr
Reverse Recovery Charge ––– 170 255 nC
t
on
Forward Turn-On Time Time is dominated by parasitic Inductance
V
DS
= V
GS
, I
D
= 150µA
A
100
––– ––– 400
––– –––
nA
ns
pF
nC
Conditions
See Fig.15
Max.
250
50
ƒ = 1.0MHz
V
DS
= 38V
–––
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 50A
e
MOSFET symbol
V
DS
= 16V, V
GS
= 0V
V
DD
= 38V, V
GS
= 10V
I
D
= 50A
V
GS
= 0V
V
DS
= 25V
V
GS
= 20V
V
GS
= -20V
V
DS
= 75V, V
GS
= 0V
T
J
= 25°C, I
F
= 50A, V
DD
= 38V
di/dt = 500A/µs
e
T
J
= 25°C, I
S
= 50A, V
GS
= 0V
e
showing the
integral reverse
p-n junction diode.
V
GS
= 10V
Typ.
–––
R
G
=1.8Ω
V
DS
= 15V, I
D
= 50A
V
DS
= 75V, V
GS
= 0V, T
J
= 125°C
mΩ
µA
I
D
= 50A
Thermal Resistance
Parameter Typ. Max. Units
R
θJC-mb
Junction-to-Mounting Base 0.5 0.8
R
θJC
(Top) Junction-to-Case
f
––– 15 °C/W
R
θJA
Junction-to-Ambient
g
––– 35
R
θJA
(<10s) Junction-to-Ambient
g
––– 22