ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VCE = 3300
V
IC = 1500
A
Doc. No. 5SYA 1595-00 July 07
• Ultra low-loss, rugged SPT+ chip-set
• Smooth switching SPT+ chip-set for
good EMC
• Industry standard package
• High power density
• AlSiC base-plate for high power
cycling capability
• AlN substrate for low thermal
resistance
Maximum rated values 1)
Parameter Symbol Conditions min max
Unit
Collector-emitter voltage VCES VGE = 0 V 3300
V
DC collector current IC Tc = 85 °C 1500
A
Peak collector current ICM tp = 1 ms, Tc = 85 °C 3000
A
Gate-emitter voltage VGES -20 20 V
Total power dissipation Ptot Tc = 25 °C, per switch (IGBT) 11750
W
DC forward current IF 1500
A
Peak forward current IFRM 3000
A
Surge current IFSM VR = 0 V, Tvj = 125 °C,
tp = 10 ms, half-sinewave 14000
A
IGBT short circuit SOA tpsc VCC = 2500 V, VCEM CHIP ≤ 3300 V
VGE ≤ 15 V, Tvj ≤ 125 °C 10 µs
Isolation voltage Visol 1 min, f = 50 Hz 6000
V
Junction temperature Tvj 150 °C
Junction operating temperature Tvj(op) -40 125 °C
Case temperature Tc -40 125 °C
Storage temperature Tstg -40 125 °C
Ms Base-heatsink, M6 screws 4 6
Mt1 Main terminals, M8 screws 8 10
Mounting torques 2) Mt2 Auxiliary terminals, M4 screws 2 3 Nm
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747
2) For detailed mounting instructions refer to ABB Document No. 5SYA2039
ABB HiPak
TM
IGBT Module
5SNA 1500E330300
5SNA 1500E330300
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1595-00 July 07 page 2 of 9
IGBT characteristic values 3)
Parameter Symbol Conditions min typ max
Unit
Collector (-emitter)
breakdown voltage V(BR)CES V
GE = 0 V, IC = 10 mA, Tvj = 25 °C 3300
V
Tvj = 25 °C 2.4 V
Collector-emitter 4)
saturation voltage VCE sat IC = 1500 A, VGE = 15 V Tvj = 125 °C 3.0 3.4 V
Tvj = 25 °C 12 mA
Collector cut-off current ICES VCE = 3300 V, VGE = 0 V Tvj = 125 °C 120 mA
Gate leakage current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C -500
500 nA
Gate-emitter threshold voltage VGE(TO) IC = 240 mA, VCE = VGE, Tvj = 25 °C 4.5 6.5 V
Gate charge Qge IC = 1500 A, VCE = 1800 V,
VGE = -15 V .. 15 V 11.0 µC
Input capacitance Cies 152
Output capacitance Coes 12.2
Reverse transfer capacitance Cres
VCE = 25 V, VGE = 0 V, f = 1 MHz,
Tvj = 25 °C 3.77 nF
Tvj = 25 °C 600
Turn-on delay time td(on) Tvj = 125 °C 570 ns
Tvj = 25 °C 220
Rise time tr
VCC = 1800 V,
IC = 1500 A,
RG = 1.0 Ω, CGE = 220 nF,
VGE = ±15 V,
Lσ = 100 nH, inductive load
Tvj = 125 °C 250 ns
Tvj = 25 °C 1480
Turn-off delay time td(off) Tvj = 125 °C 1680
ns
Tvj = 25 °C 380
Fall time tf
VCC = 1800 V,
IC = 1500 A,
RG = 1.5 Ω, CGE = 220 nF,
VGE = ±15 V,
Lσ = 100 nH, inductive load
Tvj = 125 °C 470 ns
Tvj = 25 °C 1380
Turn-on switching energy Eon
VCC = 1800 V,
IC = 1500 A,
RG = 1.0 Ω, CGE = 220 nF,
VGE = ±15 V,
Lσ = 100 nH, inductive load
Tvj = 125 °C 2000
mJ
Tvj = 25 °C 1940
Turn-off switching energy Eoff
VCC = 1800 V,
IC = 1500 A,
RG = 1.5 Ω, CGE = 220 nF,
VGE = ±15 V,
Lσ = 100 nH, inductive load
Tvj = 125 °C 2680
mJ
Short circuit current ISC tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C,
VCC = 2500 V, VCEM CHIP ≤ 3300 V 6500
A
Module stray inductance Lσ CE 10 nH
TC = 25 °C 0.06
Resistance, terminal-chip RCC’+EE’ T
C
= 125 °C 0.085
mΩ
3) Characteristic values according to IEC 60747 – 9
4) Collector-emitter saturation voltage is given at chip level
5SNA 1500E330300
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1595-00 July 07 page 3 of 9
Diode characteristic values 5)
Parameter Symbol Conditions min typ max
Unit
Tvj = 25 °C 2.0
Forward voltage 6) VF IF = 1500 A Tvj = 125 °C 2.1 2.55 V
Tvj = 25 °C 1850
Reverse recovery current Irr Tvj = 125 °C 2100
A
Tvj = 25 °C 960
Recovered charge Qrr Tvj = 125 °C 1590
µC
Tvj = 25 °C 750
Reverse recovery time trr Tvj = 125 °C 1160
ns
Tvj = 25 °C 1200
Reverse recovery energy Erec
VCC = 1800 V,
IF = 1500 A,
VGE = ±15 V,
RG = 1.0 Ω,
CGE = 220 nF,
Lσ = 100 nH
inductive load
Tvj = 125 °C 2030
mJ
5) Characteristic values according to IEC 60747 – 2
6) Forward voltage is given at chip level
Thermal properties 7)
Parameter Symbol Conditions min typ max
Unit
IGBT thermal resistance
junction to case Rth(j-c)IGBT 0.0085
K/W
Diode thermal resistance
junction to case Rth(j-c)DIODE
0.017
K/W
IGBT thermal resistance 2)
case to heatsink Rth(c-s)IGBT
IGBT per switch, λ grease = 1W/m x K 0.009
K/W
Diode thermal resistance 7)
case to heatsink Rth(c-s)DIODE
Diode per switch, λ grease = 1W/m x K 0.018
K/W
2) For detailed mounting instructions refer to ABB Document No. 5SYA2039
Mechanical properties 7)
Parameter Symbol Conditions min typ max
Unit
Dimensions L x W x H
Typical , see outline drawing 190 x 140 x 38 mm
Term. to base:
23
Clearance distance in air da according to IEC 60664-1
and EN 50124-1 Term. to term:
19 mm
Term. to base:
33
Surface creepage distance ds according to IEC 60664-1
and EN 50124-1 Term. to term:
32 mm
Mass m 1380
g
7) Thermal and mechanical properties according to IEC 60747 – 15
5SNA 1500E330300
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1595-00 July 07 page 4 of 9
Electrical configuration
Outline drawing 2)
Note: all dimensions are shown in mm
2) For detailed mounting instructions refer to ABB Document No. 5SYA2039
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.
This product has been designed and qualified for Industrial Level.
5SNA 1500E330300
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1595-00 July 07 page 5 of 9
0
500
1000
1500
2000
2500
3000
012345
V
CE
[V]
I
C
[A]
V
GE
= 15V
125 °C
25 °C
0
500
1000
1500
2000
2500
3000
012345678910111213
V
GE
[V]
I
C
[A]
25 °C
125 °C
V
CE
= 20 V
Fig. 1 Typical on-state characteristics, chip level Fig. 2 Typical transfer characteristics, chip level
0
500
1000
1500
2000
2500
3000
0 1 2 3 4 5
V
CEsat
[V]
I
C
[A]
9 V
11 V
13 V
15 V
17 V
T
vj
= 25 °C
19 V
0
500
1000
1500
2000
2500
3000
0123456
V
CEsat
[V]
I
C
[A]
9 V
11 V
13 V
15 V
17 V
T
vj
= 125 °C
19 V
Fig. 3 Typical output characteristics, chip level Fig. 4 Typical output characteristics, chip level
5SNA 1500E330300
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1595-00 July 07 page 6 of 9
0
1
2
3
4
5
6
0500 1000 1500 2000 2500 3000
I
C
[A]
E
on
, E
off
[J]
V
CC
= 1800 V
V
GE
= ±15 V
R
Gon
= 1.0 ohm
R
Goff
= 1.5 ohm
C
GE
= 220 nF
T
vj
= 125 °C
L
σ
= 100 nH
E
on
E
off
E
sw
[J] = 445 x 10
-9
x I
C2
+ 1.95 x 10
-3
x I
C
+ 745 x 10
-3
0
1
2
3
4
5
6
7
8
9
10
11
12
01234567891011
R
G
[ohm]
E
on
, E
off
[J]
V
CC
= 1800 V
I
C
= 1500 A
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 100 nH
C
GE
= 220 nF
E
on
E
off
Fig. 5 Typical switching energies per pulse
vs collector current Fig. 6 Typical switching energies per pulse
vs gate resistor
0.01
0.1
1
10
0500 1000 1500 2000 2500 3000
I
C
[A]
t
d(on)
, t
r
, t
d(off)
, t
f
[µs]
V
CC
= 1800 V
R
Gon
= 1.0 ohm
R
Goff
= 1.5 ohm
C
GE
= 220 nF
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 100 nH
t
d(off)
t
f
t
d(on)
t
r
0.1
1
10
01234567891011
R
G
[ohm]
t
d(on)
, t
r
, t
d(off)
, t
f
[µs]
V
CC
= 1800 V
I
C
= 1500 A
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 100 nH
C
GE
= 220 nF
t
d(off)
t
f
t
d(on)
t
r
Fig. 7 Typical switching times
vs collector current Fig. 8 Typical switching times
vs gate resistor
5SNA 1500E330300
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1595-00 July 07 page 7 of 9
1
10
100
1000
0 5 10 15 20 25 30 35
V
CE
[V]
C [nF]
C
ies
C
oes
C
res
V
GE
= 0V
f
OSC
= 1 MHz
V
OSC
= 50 mV
0
5
10
15
20
0 1 2 3 4 5 6 7 8 9 10
Q
g
[µC]
V
GE
[V ]
I
C
= 1500 A
T
vj
= 25 °C
V
CC
= 2400 V
V
CC
= 1800 V
Fig. 9 Typical capacitances
vs collector-emitter voltage Fig. 10 Typical gate charge characteristics
0
0.5
1
1.5
2
2.5
0500 1000 1500 2000 2500 3000 3500
V
CE
[V]
I
Cpulse
/ I
C
Chip
Module
V
CC
≤
2500 V, T
vj
= 125 °C
V
GE
= ±15 V, R
G
= 1.5 ohm
Fig. 11 Turn-off safe operating area (RBSOA)
5SNA 1500E330300
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1595-00 July 07 page 8 of 9
0
500
1000
1500
2000
2500
0 500 1000 1500 2000 2500 3000
I
F
[A]
E
rec
[mJ], I
rr
[A] , Q
rr
[µC ]
I
rr
Q
rr
E
rec
V
CC
= 1800 V
V
GE
= ±15 V
R
Gon
= 1.0 ohm
R
Goff
= 1.5 ohm
C
GE
= 220 nF
T
vj
= 125 °C
L
σ
= 100 nH
E
rec
[mJ] = -239 x 10
-6
x I
F2
+ 1.45 x I
F
+ 355
0
500
1000
1500
2000
01234567
di/dt [kA/µs]
E
rec
[m J ],I
rr
[A ], Q
rr
[µ C ]
V
CC
= 1800 V
I
F
= 1500 A
T
vj
= 125 °C
L
σ
= 100 nH
C
GE
= 220 nF
E
rec
Q
rr
I
rr
R
G
= 5.6 ohm
R
G
= 10 ohm
R
G
= 2.2 ohm
R
G
= 3.3 ohm
R
G
= 1.8 ohm
R
G
= 1.5 ohm
R
G
= 1.2 ohm
R
G
= 1.0 ohm
Fig. 12 Typical reverse recovery characteristics
vs forward current Fig. 13 Typical reverse recovery characteristics
vs di/dt
0
500
1000
1500
2000
2500
3000
0 0.5 1 1.5 2 2.5 3
V
F
[V]
I
F
[A]
25 °C
125 °C
0
500
1000
1500
2000
2500
3000
0 500 1000 1500 2000 2500 3000 3500
V
R
[V]
I
F
[A]
V
CC
≤
2500 V
di/dt
≤
10 kA/µs
T
vj
= 125 °C
Fig. 14 Typical diode forward characteristics,
chip level Fig. 15 Safe operating area diode (SOA)
5SNA 1500E330300
ABB Switzerland Ltd, Semiconductors reserves the right
to change specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYA 1595-00 July 07
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
Analytical function for transient thermal
impedance:
)e-(1R = (t)Z n
1i
t/-
ic)-(jth ∑
=
i
τ
i 1 2 3 4
Ri(K/kW) 5.854 1.375 0.641 0.632
IGBT
τi(ms) 207.4 30.1 7.55 1.57
Ri(K/kW) 11.54 2.887 1.229 1.295
DIODE
τi(ms) 203.6 30.1 7.53 1.57
0.0001
0.001
0.01
0.1
0.001 0.01 0.1 1 10
t [s]
Zth(j-h)
[K/W] IGBT, DIODE
Zth(j-c) IGBT
Zth(j-c) Diode
Fig. 16 Thermal impedance vs time
For detailed information refer to:
• 5SYA 2042-02 Failure rates of HiPak modules due to cosmic rays
• 5SYA 2043-01 Load – cycle capability of HiPaks
• 5SZK 9120-00 Specification of environmental class for HiPak (available upon request)
