TSUS4300 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES * Package type: leaded * Package form: T-1 * Dimensions (in mm): O 3 * Peak wavelength: p = 950 nm * High reliability * Angle of half intensity: = 16 * Low forward voltage 94 8636-1 * Suitable for high pulse current operation * Good spectral matching with Si photodetectors * Package matches with detector TEFT4300 DESCRIPTION TSUS4300 is an infrared, 950 nm emitting diode in GaAs technology molded in a blue tinted plastic package. * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS * Infrared remote control and free air transmission systems with low forward voltage and small package requirements * Emitter in transmissive sensors * Emitter in reflective sensors PRODUCT SUMMARY COMPONENT TSUS4300 Ie (mW/sr) (deg) p (nm) tr (ns) 18 16 950 800 Note * Test conditions see table "Basic Characteristics" ORDERING INFORMATION ORDERING CODE TSUS4300 TSUS4300-ASZ PACKAGING REMARKS Bulk MOQ: 5000 pcs, 5000 pcs/bulk PACKAGE FORM T-1 Ammopack MOQ: 10 000 pcs, 2000 pcs/box T-1 Note * MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified) PARAMETER SYMBOL VALUE Reverse voltage TEST CONDITION VR 5 UNIT V Forward current IF 100 mA 200 mA Peak forward current tp/T = 0.5, tp = 100 s IFM Surge forward current tp = 100 s IFSM 2 A PV 170 mW C Power dissipation Junction temperature Tj 100 Operating temperature range Tamb -40 to +85 C Storage temperature range Tstg -40 to +100 C t 5 s, 2 mm from case Tsd 260 C J-STD-051, leads 7 mm, soldered on PCB RthJA 300 K/W Soldering temperature Thermal resistance junction/ambient Rev. 1.9, 20-Oct-15 Document Number: 81053 1 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSUS4300 www.vishay.com Vishay Semiconductors 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 100 RthJA = 300 K/W 80 60 40 100 80 RthJA = 300 K/W 60 40 20 20 0 0 0 10 21315 20 30 40 50 60 70 80 90 100 0 Tamb - Ambient Temperature (C) 10 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (C) 21316 Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF Reverse current Breakdown voltage Junction capacitance Radiant intensity TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF = 100 mA, tp = 20 ms VF - 1.3 1.7 V IF = 1.5 A, tp = 100 s VF - 2.2 - V IF = 100 mA TKVF - -1.3 - mV/K VR = 5 V IR - - 100 A IR = 100 A V(BR) 5 40 - VR = 0 V, f = 1 MHz, E = 0 Cj - 30 - pF IF = 100 mA, tp = 20 ms Ie 7 18 35 mW/sr mW/sr IF = 1.5 A, tp = 100 s Ie - 160 - IF = 100 mA, tp = 20 ms e - 20 - mW IF = 20 mA TKe - -0.8 - %/K - 16 - deg Peak wavelength IF = 100 mA p - 950 - nm Spectral bandwidth IF = 100 mA - 50 - nm Temperature coefficient of p IF = 100 mA TKp - 0.2 - nm/K IF = 100 mA tr - 800 - ns IF = 1.5 A tr - 400 - ns IF = 100 mA tf - 800 - ns IF = 1.5 A tf - 400 - ns d - 2.1 - mm Radiant power Temperature coefficient of e Angle of half intensity Rise time Fall time Virtual source diameter Rev. 1.9, 20-Oct-15 Document Number: 81053 2 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSUS4300 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) 1000 I e - Radiant Intensity (mW/sr) IF - Forward Current (A) 10 1 t p /T = 0.01, I FM = 2 A 0.02 10 0 0.05 0.1 0.2 100 10 1 0.5 10 -1 10 -2 94 7947 0.1 10 -1 10 0 10 1 t p - Pulse Duration (ms) 10 2 10 0 Fig. 3 - Pulse Forward Current vs. Pulse Duration e - Radiant Power (mW) I F - Forward Current (mA) 1000 10 3 10 2 10 1 10 0 100 10 1 0.1 0 1 2 3 4 V F - Forward Voltage (V) 94 7996 10 0 10 1 10 2 10 3 I F - Forward Current (mA) 94 7980 Fig. 4 - Forward Current vs. Forward Voltage 10 4 Fig. 7 - Radiant Power vs. Forward Current 1.2 1.6 1.1 1.2 IF = 10 mA Ie rel; e rel VF rel - Relative Forward Voltage (V) 10 4 Fig. 6 - Radiant Intensity vs. Forward Current 10 4 10 -1 10 1 10 2 10 3 I F - Forward Current (mA) 94 7979 1.0 0.9 IF = 20 mA 0.8 0.4 0.8 0.7 0 94 7990 20 40 60 80 100 Tamb - Ambient Temperature (C) Fig. 5 - Relative Forward Voltage vs. Ambient Temperature Rev. 1.9, 20-Oct-15 0 -10 0 10 94 7993 50 100 140 T amb - Ambient Temperature (C) Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature Document Number: 81053 3 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSUS4300 www.vishay.com Vishay Semiconductors 0 I e rel - Relative Radiant Intensity e rel - Relative Radiant Power 1.25 1.0 0.75 0.5 0.25 IF = 100 mA 0 900 20 30 40 1.0 0.9 50 0.8 60 70 0.7 80 1000 950 - Wavelength (nm) 94 7994 10 0.6 0.4 0.2 0 0.2 0.4 0.6 94 7981 Fig. 9 - Relative Radiant Power vs. Wavelength Fig. 10 - Relative Radiant Intensity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters 3.2 0.1 C O 3 0.1 < 0.6 (2.8) 3.5 0.1 CHIP POSITION AREA NOT PLANE 6.1 0.3 34.7 0.5 4.5 0.3 3.9 0.15 A + 0.15 0.4 - 0.05 + 0.2 2.54 nom. 1.5 0.5 0.5 - 0.1 technical drawings according to DIN specifications Drawing-No.: 6.544-5269.02-4 Issue: 5; 28.07.14 Rev. 1.9, 20-Oct-15 Document Number: 81053 4 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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