January 2012 Doc ID 8981 Rev 4 1/16
16
STP9NK65Z
STP9NK65ZFP
N-channel 650 V, 1 Ω, 6.4 A, TO-220, TO-220FP
Zener-protected SuperMESH™ Power MOSFET
Features
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Extremely high dv/dt and avalanche
capabilities
Applications
Switching applications
Description
These devices are N-channel Zener-protected
Power MOSFETs developed using
STMicroelectronics' SuperMESH™ technology,
achieved through optimization of ST's well
established strip-based PowerMESH™ layout. In
addition to a significant reduction in on-
resistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.
Figure 1. Internal schematic diagram
Order codes VDSS
RDS(on)
max. IDPw
STP9NK65Z 650 V < 1.2 Ω6.4 A 125 W
STP9NK65ZFP 650 V < 1.2 Ω6.4 A 30 W
TO-220 TO-220FP
123
12
3
Table 1. Device summary
Order codes Marking Package Packaging
STP9NK65Z P9NK65Z TO-220 Tube
STP9NK65ZFP P9NK65ZFP TO-220FP Tube
www.st.com
Contents STP9NK65Z, STP9NK65ZFP
2/16 Doc ID 8981 Rev 4
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
STP9NK65Z, STP9NK65ZFP Electrical ratings
Doc ID 8981 Rev 4 3/16
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220 TO-220FP
VDS Drain-source voltage (VGS = 0) 650 V
VGS Gate- source voltage ± 30 V
IDDrain current (continuous) at TC = 25 °C 6.4 6.4 (1)
1. Limited only by maximum temperature allowed
A
IDDrain current (continuous) at TC = 100 °C 4 4(1) A
IDM (2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 25.6 25.6 (1) A
PTOT Total dissipation at TC = 25 °C 125 30 W
Derating factor 1 0.24 W/°C
VESD(G-S) Gate source ESD(HBM-C=100 pF, R=1.5 kΩ) 4000 V
dv/dt (3)
3. ISD 6.4 A, di/dt 200 A/µs, VDD 80%V(BR)DSS
Peak diode recovery voltage slope 4.5 V/ns
VISO Insulation withstand voltage (DC) - 2500 V
Tj
Tstg
Operating junction temperature
Storage temperature
-55 to 150
-55 to 150
°C
°C
Table 3. Thermal data
Symbol Parameter
Value
Unit
TO-220 TO-220FP
Rthj-case Thermal resistance junction-case max 1 4.2 °C/W
Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W
TlMaximum lead temperature for soldering purpose 300 °C
Table 4. Avalanche characteristics
Symbol Parameter Value Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)6.4 A
EAS
Single pulse avalanche energy
(starting Tj=25 °C, ID=IAR, VDD=50 V) 200 mJ
Electrical characteristics STP9NK65Z, STP9NK65ZFP
4/16 Doc ID 8981 Rev 4
2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source
breakdown voltage
(VGS = 0)
ID = 1 mA 650 V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = 650 V
VDS = 650 V, @125 °C
1
50
µA
µA
IGSS
Gate-body leakage
current (VDS = 0) VGS = ± 20 V ±10 µA
VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 3 3.75 4.5 V
RDS(on)
Static drain-source on
resistance VGS = 10 V, ID = 3.2 A 1 1.2 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
gfs (1)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward
transconductance VDS = 15 V, ID= 3.2 A - 6 - S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0 -
1145
130
28
-
pF
pF
pF
Coss eq(2).
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance VGS = 0, VDS = 0 to 400 V - 55 - pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 520 V, ID = 6.4 A,
VGS = 10 V
(see Figure 3)
-
41
7.5
22
-
nC
nC
nC
Table 7. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on)
tr
Turn-on delay time
Rise time
VDD = 325 V, ID = 3.2 A
RG=4.7 Ω VGS = 10 V
(see Figure 2)
-20
12 -ns
ns
td(off)
tf
Turn-off delay time
Fall time
VDD = 325 V, ID = 3.2 A
RG=4.7 Ω VGS = 10 V
(See Figure 2)
-45
15 -ns
ns
STP9NK65Z, STP9NK65ZFP Electrical characteristics
Doc ID 8981 Rev 4 5/16
Table 8. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD
ISDM (1)
1. Pulse width limited by safe operating area.
Source-drain current
Source-drain current (pulsed) -6.4
25.6
A
A
VSD (2)
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage ISD = 6.4 A, VGS = 0 - 1.6 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 6.4 A,
di/dt = 100 A/µs
VDD = 50 V, Tj = 150 °C
(see Figure 4)
-
400
2600
13
ns
nC
A
Table 9. Gate-source zener diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
BVGSO(1)
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Gate-source breakdown voltage Igs=±1 mA
(open drain) 30 - - V
Test circuits STP9NK65Z, STP9NK65ZFP
6/16 Doc ID 8981 Rev 4
3 Test circuits
Figure 2. Switching times test circuit for
resistive load
Figure 3. Gate charge test circuit
Figure 4. Test circuit for inductive load
switching and diode recovery times
Figure 5. Unclamped Inductive load test
circuit
Figure 6. Unclamped inductive waveform Figure 7. Switching time waveform
STP9NK65Z, STP9NK65ZFP Test circuits
Doc ID 8981 Rev 4 7/16
3.1 Electrical characteristics (curves)
Figure 8. Safe operating area for TO-220 Figure 9. Thermal impedance for TO-220
Figure 10. Safe operating area for TO-220FP Figure 11. Thermal impedance for TO-220FP
Figure 12. Output characteristics Figure 13. Transfer characteristics
Test circuits STP9NK65Z, STP9NK65ZFP
8/16 Doc ID 8981 Rev 4
Figure 14. Transconductance Figure 15. Static drain-source on resistance
Figure 16. Gate charge vs gate-source voltage Figure 17. Capacitance variations
Figure 18. Normalized gate threshold voltage
vs temperature
Figure 19. Normalized on resistance vs
temperature
STP9NK65Z, STP9NK65ZFP Test circuits
Doc ID 8981 Rev 4 9/16
Figure 20. Source-drain diode forward
characteristics
Figure 21. Normalized BVDSS vs temperature
Figure 22. Maximum avalanche energy vs
temperature
Package mechanical data STP9NK65Z, STP9NK65ZFP
10/16 Doc ID 8981 Rev 4
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
STP9NK65Z, STP9NK65ZFP Package mechanical data
Doc ID 8981 Rev 4 11/16
Table 10. TO-220 type A mechanical data
Dim.
mm
Min. Typ. Max.
A 4.40 4.60
b 0.61 0.88
b1 1.14 1.70
c 0.48 0.70
D 15.25 15.75
D1 1.27
E10 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L13 14
L1 3.50 3.93
L20 16.40
L30 28.90
P 3.75 3.85
Q 2.65 2.95
Package mechanical data STP9NK65Z, STP9NK65ZFP
12/16 Doc ID 8981 Rev 4
Figure 23. TO-220 type A drawing
0015988_typeA_Rev_S
STP9NK65Z, STP9NK65ZFP Package mechanical data
Doc ID 8981 Rev 4 13/16
Table 11. TO-220FP mechanical data
Dim.
mm
Min. Typ. Max.
A4.4 4.6
B2.5 2.7
D 2.5 2.75
E0.45 0.7
F0.75 1
F1 1.15 1.70
F2 1.15 1.70
G4.95 5.2
G1 2.4 2.7
H 10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L5 2.9 3.6
L6 15.9 16.4
L7 9 9.3
Dia 3 3.2
Package mechanical data STP9NK65Z, STP9NK65ZFP
14/16 Doc ID 8981 Rev 4
Figure 24. TO-220FP drawing
7012510_Rev_K
A
B
H
Dia
L7
D
E
L6 L5
L2
L3
L4
F1 F2
F
G
G1
STP9NK65Z, STP9NK65ZFP Revision history
Doc ID 8981 Rev 4 15/16
5 Revision history
Table 12. Document revision history
Date Revision Changes
11-Sep-2006 2 Complete version
19-Dec-2007 3 The document has been reformatted
26-Jan-2012 4
Minor text changes
Modified: Features in cover page
Updated: Section 4: Package mechanical data
STP9NK65Z, STP9NK65ZFP
16/16 Doc ID 8981 Rev 4
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