TC7SU04F/FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SU04F, TC7SU04FU Inverter The TC7SU04 is a high speed C2MOS Inverter fabricated with silicon gate C2MOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining the C2MOS low power dissipation. The internal circuit is composed of single stages inverter, it can be applied for crystal oscillation. The input is equipped with protection circuits against static discharge or transient excess voltage. Output currents are 1/2 compared to TC74HC series models. TC7SU04F (SMV) TC7SU04FU Features * High speed: tpd = 7 ns (typ.) at VCC = 5 V * Low power dissipation: ICC = 1.0 A (max) at Ta = 25C * High noise immunity: VNIH = VNIL = 10% VCC (min) * Output drive capability: 5 LSTTL loads * Symmetrical output impedance: |IOH| = IOL = 2 mA (min) * Balanced propagation delay time: tpLH - tpHL * Wide operating voltage range: VCC (opr) = 2 to 6 V (USV) Weight SSOP5-P-0.95: 0.016 g (typ.) SSOP5-P-0.65A: 0.006 g (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Supply voltage range VCC -0.5 to 7 V DC input voltage VIN -0.5 to VCC + 0.5 V DC output voltage VOUT -0.5 to VCC + 0.5 V Input diode current IIK 20 mA Output diode current IOK 20 mA DC output current IOUT 12.5 mA DC VCC/ground current ICC 25 mA Power dissipation PD 200 mW Storage temperature range Tstg -65 to 150 C TL 260 C Lead temperature (10 s) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1987-09 (c) 2001-2017 Toshiba Electronic Devices & Storage Corporation 1 2017-08-02 TC7SU04F/FU Marking Pin Configuration (top view) VCC 5 Part No. E OUT Y 4 6 NC 1 Logic Diagram IN A IN A 2 GND 3 Truth Table 1 OUT Y A Y L H H L Operating Ranges Characteristics Symbol Rating Unit Supply voltage VCC 2 to 6 V Input voltage VIN 0 to VCC V VOUT 0 to VCC V Topr -40 to 85 C Output voltage Operating temperature range (c) 2001-2017 Toshiba Electronic Devices & Storage Corporation 2 2017-08-02 TC7SU04F/FU Electrical Characteristics DC Electrical Characteristics Ta = -40 to 85C Ta = 25C Characteristics High level Symbol Test Condition VCC (V) Min Typ. Max Min Max 2.0 1.7 1.7 4.5 3.6 3.6 6.0 4.8 4.8 2.0 0.3 0.3 4.5 0.9 0.9 6.0 1.2 1.2 2.0 1.8 2.0 1.8 4.5 4.0 4.5 4.0 6.0 5.5 5.9 5.5 IOH = -2 mA 4.5 4.18 4.31 4.13 IOH = -2.6 mA 6.0 5.68 5.80 5.63 2.0 0 0.2 0.2 4.5 0 0.5 0.5 6.0 0.1 0.5 0.5 IOL = 2 mA 4.5 0.17 0.26 0.33 IOL = 2.6 mA 6.0 0.18 0.26 0.33 VIH Input voltage Low level VIL IOH = -20 A High level VOH VIN = VIL Output voltage IOL = 20 A Low level VOL VIN = VIH Unit V V Input leakage current IIN VIN = VCC or GND 6.0 0.1 1.0 A Quiescent supply current ICC VIN = VCC or GND 6.0 1.0 10.0 A AC Electrical Characteristics (CL = 15 pF, input tr = tf = 6 ns, VCC = 5 V) Characteristics Symbol Test Condition Output transition time tTLH tTHL Propagation delay time tpLH tpHL (c) 2001-2017 Toshiba Electronic Devices & Storage Corporation 3 Ta = 25C Unit Min Typ. Max 5 10 ns 7 15 ns 2017-08-02 TC7SU04F/FU AC Electrical Characteristics (CL = 50 pF, input tr = tf = 6 ns) Characteristics Symbol Test Condition tTLH tTHL Output transition time tpLH tpHL Propagation delay time Input capacitance CIN Power dissipation capacitance CPD Ta = -40 to 85C Ta = 25C Unit VCC (V) Min Typ. Max Min Max 2.0 50 125 155 4.5 14 25 31 6.0 12 21 26 2.0 48 100 125 4.5 12 20 25 6.0 9 17 21 5 10 10 pF 10 pF (Note 1) ns ns Note 1: CPD defined as the value of internal equivalent capacitance of IC which is calculated from the operating current consumption without load (refer to test circuit). Average operating current can be obtained by the equation hereunder. ICC (opr) = CPD * VCC * fIN + ICC Switching Characteristics Test Circuit VCC VIN VIN VOUT 50 P.G. 6 ns 6 ns 90% 50% 10% tpHL CL VOUT VCC 90% 50% 10% GND tpLH 90% 50% 10% 90% 50% 10% tTHL VOH VOL tTLH ICC (opr) Test Circuit VCC = 5 V A 50 P.G. Input waveform is the same as that in case of switching characteristics test. (c) 2001-2017 Toshiba Electronic Devices & Storage Corporation 4 2017-08-02 TC7SU04F/FU Package Dimensions Weight: 0.016 g (typ.) (c) 2001-2017 Toshiba Electronic Devices & Storage Corporation 5 2017-08-02 TC7SU04F/FU Package Dimensions Weight: 0.006 g (typ.) (c) 2001-2017 Toshiba Electronic Devices & Storage Corporation 6 2017-08-02 TC7SU04F/FU RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as "TOSHIBA". Hardware, software and systems described in this document are collectively referred to as "Product". * TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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