R0201-BS62LV4006
May. 2006
3
n DC ELECTRICAL CHARACTERISTICS (TA = -40OC to +85OC)
PARAMETER
NAME PARAMETER TEST CONDITIONS MIN. TYP.(1)
MAX. UNITS
VCC Power Supply 2.4 -- 5.5 V
VIL Input Low Voltage -0.5(2) -- 0.8 V
VIH Input High Voltage 2.2 -- VCC+0.3(3)
V
IIL Input Leakage Current VCC = Max, VIN = 0V to VCC -- -- 1 UA
ILO Output Leakage Current
VCC = Max, CE= VIH, or OE = VIH,
VI/O = 0V to VCC -- -- 1 UA
VOL Output Low Voltage VCC = Max, IOL = 2.0mA -- -- 0.4 V
VOH Output High Voltage VCC = Min, IOH = -1.0mA 2.4 -- -- V
VCC=3.0V
30
ICC(5) Operating Power Supply
Current CE = VIL,
IDQ = 0mA, f = FMAX(4) VCC=5.0V
-- -- 70 mA
VCC=3.0V
2
ICC1 Operating Power Supply
Current CE = VIL,
IDQ = 0mA, f = 1MHz VCC=5.0V
-- -- 10 mA
VCC=3.0V
0.5
ICCSB Standby Current – TTL CE = VIH,
I
DQ = 0mA VCC=5.0V
-- -- 1.0 mA
VCC=3.0V
0.25 4.0
ICCSB1(6) Standby Current – CMOS
CE≧VCC-0.2V,
VIN≧VCC-0.2V or VIN≦0.2V VCC=5.0V
-- 1.5 20 uA
1. Typical characteristics are at TA=25OC and not 100% tested.
2. Undershoot: -1.0V in case of pulse width less than 20 ns.
3. Overshoot: VCC+1.0V in case of pulse width less than 20 ns.
4. FMAX=1/tRC.
5. ICC (MAX.) is 29mA/68mA at VCC=3.0V/5.0V and TA=70OC.
6. ICCSB1(MAX.) is 2.0uA/10uA at VCC=3.0V/5.0V and TA=70OC.
n DATA RETENTION CHARACTERISTICS (TA = -40OC to +85OC)
SYMBOL PARAMETER TEST CONDITIONS MIN. TYP. (1)
MAX. UNITS
VDR VCC for Data Retention CE≧VCC-0.2V,
VIN≧VCC-0.2V or VIN≦0.2V 1.5 -- -- V
ICCDR(3) Data Retention Current CE≧VCC-0.2V,
VIN≧VCC-0.2V or VIN≦0.2V -- 0.1 1.5 uA
tCDR Chip Deselect to Data
Retention Time 0 -- -- ns
tR Operation Recovery Time
See Retention Waveform tRC (2) -- -- ns
1. VCC=1.5V, TA=25OC and not 100% tested.
2. tRC = Read Cycle Time.
3. ICCRD(Max.) is 1.0uA at TA=70OC.
n LOW VCC DATA RETENTION WAVEFORM (1) (CE Controlled)
tR
VIH
VIH
CE≧VCC - 0.2V
V
≧1.5V
CE
VCC