NTZD3152PT1G - ON SEMICONDUCTOR

June, 2016 − Rev. 6 1Publication Order Number:

NTZD3152P/D

NTZD3152P

Small Signal MOSFET

−20 V, −430 mA, Dual P−Channel

with ESD Protection, SOT−563

Features

•Low RDS(on) Improving System Efficiency

•Low Threshold Voltage

•ESD Protected Gate

•Small Footprint 1.6 x 1.6 mm

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

•Load/Power Switches

•Power Supply Converter Circuits

•Battery Management

•Cell Phones, Digital Cameras, PDAs, Pagers, etc.

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)

Parameter Symbol Value Unit

Drain−to−Source Voltage VDSS −20 V

Gate−to−Source Voltage VGS ±6.0 V

Continuous Drain Curren

(Note 1) Steady

State TA = 25°CID−430 mA

TA = 85°C−310

Power Dissipation

(Note 1) Steady State PD250 mW

Continuous Drain Curren

(Note 1) t v 5 s TA = 25°CID−455 mA

TA = 85°C−328

Power Dissipation

(Note 1) t v 5 s PD280 mW

Pulsed Drain Current tp = 10 msIDM −750 mA

Operating Junction and Storage Temperature TJ,

TSTG −55 to

150 °C

Source Current (Body Diode) IS−350 mA

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s) TL260 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction−to−Ambient – Steady State (Note 1) RqJA 500 °C/W

Junction−to−Ambient – t v 5 s (Note 1) 447

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be af fected.

1. Surface mounted on FR4 board using 1 in. sq. pad size

(Cu. area = 1.127 in. sq. [1 oz.] including traces).

www.onsemi.com

V(BR)DSS RDS(on) Typ ID Max

−20 V 0.5 W @ −4.5 V

0.6 W @ −2.5 V −430 mA

1.0 W @ −1.8 V

Device Package Shipping†

ORDERING INFORMATION

NTZD3152PT1G SOT−563

(Pb−Free) 4000 / Tape & Ree

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer t o our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Top View

PINOUT: SOT−563

P−Channel

MOSFET

NTZD3152PT5H SOT−563

(Pb−Free) 8000 / Tape & Ree

TU = Specific Device Code

M = Date Code

G= Pb−Free Package

TU M G

MARKING DIAGRAM

SOT−563−6

CASE 463A

(Note: Microdot may be in either location)

NTZD3152PT1H

NTZD3152P

www.onsemi.com

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted.)

Parameter Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA−20 V

Drain−to−Source Breakdown Voltage

Temperature Coefficient V(BR)DSS/TJ18 mV/°C

Zero Gate Voltage Drain Current IDSS VGS = 0 V,

VDS = −16 V TJ = 25°C−1.0 mA

TJ = 125°C−2.0

Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = "4.5 V"2.0 mA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage VGS(TH) VGS = VDS, ID = −250 mA−0.45 −1.0 V

Negative Threshold

Temperature Coefficient VGS(TH)/TJ−1.9 mV/°C

Drain−to−Source On Resistance RDS(on) VGS = −4.5 V, ID = −430 mA 0.5 0.9 W

VGS = −2.5 V, ID = −300 mA 0.6 1.2

VGS = −1.8 V, ID = −150 mA 1.0 2.0

Forward Transconductance gFS VDS = −10 V, ID = −430 mA 1.0 S

CHARGES AND CAPACITANCES

Input Capacitance CISS VGS = 0 V, f = 1.0 MHz,

VDS = −16 V

105 175 pF

Output Capacitance COSS 15 30

Reverse Transfer Capacitance CRSS 10 20

Total Gate Charge QG(TOT)

VGS = −4.5 V, VDS = −10 V,

ID = −215 mA

1.7 2.5 nC

Threshold Gate Charge QG(TH) 0.1

Gate−to−Source Charge QGS 0.3

Gate−to−Drain Charge QGD 0.4

SWITCHING CHARACTERISTICS (Note 3)

T urn−On Delay Time td(on)

VGS = −4.5 V, VDD = −10 V,

ID = −215 mA, RG = 10 W

10 ns

Rise Time tr12

T urn−Off Delay Time td(off) 35

Fall Time tf19

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage VSD VGS = 0 V,

IS = −350 mA TJ = 25°C−0.8 −1.2 V

Reverse Recovery Time tRR VGS = 0 V, dISD/dt = 100 A/ms,

IS = −350 mA 13 ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

3. Switching characteristics are independent of operating junction temperatures.

NTZD3152P

www.onsemi.com

TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)

−1 V 100°C

0.6

632

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

−ID, DRAIN CURRENT (AMPS)

0.4

0.2

Figure 1. On−Region Characteristics

0.5

21.5 2.

0.8

0.4

0.2

Figure 2. Transfer Characteristics

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

0.5

0.7

0.6

0.4

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

−ID, DRAIN CURRENT (AMPS)

0.1 1.

0.8

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

−ID, DRAIN CURRENT (AMPS)

−50 0−25 25

1.4

1.2

0.8

0.6 50 125100

Figure 5. On−Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

TJ = 25°C

TJ = −55°C

ID = −0.43 A

TJ = 25°C

1.4

0.5

75 150

TJ = 25°C

ID = −0.43 A

VGS = −4.5 V

RDS(on), DRAIN−TO−SOURCE

RESISTANCE (NORMALIZED)

25°C

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

1.6

VGS = −1.8 V

−1.2 V

−1.4 V

−1.6 V

1.3

0.6

1.1

VGS = −2.5 V

710

VDS ≥ −10 V

0.8

0.2 0.3 0.4

0.9

VGS = −1.8 V

VGS = −2 V

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

24 8

10 2

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

VGS = 0 V

−IDSS, LEAKAGE (nA)

TJ = 150°C

TJ = 100°C

100

1000

10000

610 1814

0.45

0.65

0.55

0.75

0.7

1.0

1.2

0.5 0.6 0.7 0.8 0.9

0.8

0.6

NTZD3152P

www.onsemi.com

TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)

VGS = 0 V

−VGS

510

150

100

020

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

C, CAPACITANCE (pF)

021

QG, TOTAL GATE CHARGE (nC)

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS

)

TJ = 25°C

COSS

CISS

CRSS ID = −0.215 A

TJ = 25°C

250

1.81.6

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

QGD

101

1100

RG, GATE RESISTANCE (W)

t, TIME (ns)

VDD = −10 V

ID = −0.215 A

VGS = −4.5 V

100

200

td(off)

td(on)

−VDS

15 1.40.2 1.2

0.9

0.2

−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

−IS, SOURCE CURRENT (AMPS)

VGS = 0 V

TJ = 25°C

0.6

0.70.50.3

0.4

Figure 7. Capacitance Variation Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current

0.4 0.6 0.8

0.80.60.4

QGS

Figure 11. Safe Operating Area

−VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1001010.1

0.001

0.1

−ID, DRAIN CURRENT (A)

RDS(on) Limit

Thermal Limit

Package Limit

100 ms

10 ms

VGS ≤ 6 V

Single Pulse

TC = 25°C

0.01

NTZD3152P

www.onsemi.com

PACKAGE DIMENSIONS

DIM MIN NOM MAX

MILLIMETERS

A0.50 0.55 0.60

b0.17 0.22 0.27

D1.50 1.60 1.70

E1.10 1.20 1.30

e0.5 BSC

L0.10 0.20 0.30

1.50 1.60 1.70

0.020 0.021 0.023

0.007 0.009 0.011

0.059 0.062 0.066

0.043 0.047 0.051

0.02 BSC

0.004 0.008 0.012

0.059 0.062 0.066

MIN NOM MAX

INCHES

SOT−563, 6 LEAD

CASE 463A

ISSUE G

0.08 (0.003) X

b6 5 PL

−X−

−Y−

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETERS

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD THICKNESS

IS THE MINIMUM THICKNESS OF BASE MATERIAL.

12 3

1.35

0.0531

0.5

0.0197

ǒmm

inchesǓ

SCALE 20:1

0.5

0.0197

1.0

0.0394

0.45

0.0177

0.3

0.0118

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

0.08 0.12 0.18 0.003 0.005 0.007

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor ’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer ’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body . Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

UBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

NTZD3152P/D

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor

19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your loc

Sales Representative