ABSOLUTE M AXIM UM R A T INGS
Drain Cur re nt. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Device Dissipatio n at 2 5oC Case Tempera ture . . . 1.2W
Stor age Temper at ue Range . . . . . . . . . . . . . -65oC to +200 oC
Lea d Tem p erature (1/ 1 6" f r om case for 10 sec.). . . . . . 300oC
Oper at ing Temperat ur e Ra nge . . . . . . . . . . . -55oC to +125 oC
SD210 / SD212 / SD214
PARAMETER SD210 SD212 SD214 UNIT
VDS Drain-to-Source +30 +10 +20 Vdc
VSD Source-to-Drain +10 +10 +20 Vdc
VDB Drain-to-Body +30 +15 +25 Vdc
VSB Source-to-Body +15 +15 +25 Vdc
VGS Gate-to-Source ±40 ±40 ±40 Vdc
VGB Gate-to-Body ±40 ±40 ±40 Vdc
VGD Gate-to-Drain ±40 ±40 ±40 Vdc
DC CHARACTERISTIC S (TA = 25 oC, unless other wise specified )
SYMBOL PARAMETER SD210 SD212 SD214 UNITS TEST CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
BREAKDOWN VOLTAGE
BVDS Drain-to-Source 30 35
V
VGS = VBS = 0V, ID = 10µA
10 25 10 25 20 25 VGS = VBS = -5V, IS = 10nA
BVSD Sourc e-to Drain 10 10 20 VGD = VBD = -5V, ID = 10nA
BVDB Drain-to-Body 15 15 25 VGB = 0V, source OPEN, ID = 10nA
BVSB Source-to-Body 15 15 25 VGB = 0V, drain OPEN, IS = 10µA
LEAKAGE CURRENT
IDS (OFF) Drain-to-Source 110 110
nA
VGS = VBS = -5V, VDS = +10V
110 VGS = VBS = -5V, VDS = +20V
ISD (OFF) Source-to-Drain 110 110 V
GS = VBD = -5V, VSD = +10V
110 VGS = VBD = -5V, VSD = +20V
IGBS Gate 0.1 0.1 0.1 VDB = VSB = 0V, V GS = ±40V
VTThresho ld Vol tag e 0.5 1.0 2.0 0.1 1.0 2.0 0.1 1.0 2.0 V VDS = VGS = VT, IS = 1µA, VSB = 0V
rDS (ON) Drain-to-Source
Resistance
50 70 50 70 50 70
Ω
ID = 1.0mA, VSB = 0, VGS = +5V
30 45 30 45 30 45 ID = 1.0mA, VSB = 0, VGS = +10V
23 23 23 ID = 1.0mA, VSB = 0, VGS = +15V
19 19 19 ID = 1.0mA, VSB = 0, VGS = +20V
17 17 17 ID = 1.0mA, VSB = 0, VGS = +25V
AC ELECTRICA L CHARACT ERISTICS
SYMBOL PARAMETER SD210 SD212 SD214 UNITS TEST CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
gfs Forward
Transconductance 10 15 10 15 10 15 ms VDS = 10V, VSB = 0V,
ID = 20mA, f = 1kHz
SMALL SIGNAL CAPACITANCES
C(GS+GD+GB) Gate Node 2.4 3.5 2.4 3.5 2.4 3.5
pF VDS = 10V, f = 1MHz
VGS = VBS = -15V
C(GD+DB) Drain Node 1.3 1.5 1.3 1.5 1.3 1.5
C(GS+SB) S ource Node 3. 5 5. 5 3. 5 5. 5 3. 5 5. 5
CDG Reverse Transfer 0.3 0.5 0.3 0.5 0.3 0.5
Inf orm at i on furni shed by Calogic is believed to be accurate and reli able. Howe ver, n o responsibi lit y is a ssumed for its use: no r for any in fring eme nt of pate nts or other
rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent rights of Calogic.
CALOGIC LLC, 237 Whitney Place, Fremont, California 94539, Telephone: 510-656-2900, FAX: 510-651-1076 DS056 REV A