KBP2005GKBP210G VISHAY 2.0A Glass Passivated Bridge Rectifier Features Glass passivated die construction Low reverse leakage current Surge overload rating to 65A peak classification 94V0 Vishay Lite-On Power Semiconductor High case dielectric strength of 1500Vanms Ideal for printed circuit board applications Plastic material - UL Recognition flammability @ This series isUL listed under recognized component index, file E95060 Absolute Maximum Ratings Tj = 25C Repetitive peak reverse voltage KBP2005G Vrru 50 Vv =Working peak reverse voltage KBP201G =VRwM 100 Vv =DC Blocking voltage KBP202G =VpR 200 V KBP204G 400 Vv KBP206G 600 Vv KBP208G 800 Vv KBP210G 1000 Vv Peak forward surge current lesm 65 A Average forward current Tce=105C lFay 2 A Junction and storage temperature range Ti=Tstg | -65...4150 | C Electrical Characteristics Tj = 25C Forward voltage IpF=2A Ve 1.1 Vv Reverse current Te=25C IR 5 vA To=1 25C IR 500 vA Diode capacitance VpR=4V, f=1MHz Cp 25 pF Thermal resistance mounted on Rthuc 38 KAW junction to case 75x75x1.6mm aluminum plate Rev. A2, 24-Jun-98KBP2005GKBP210G Vishay Lite-On Power Semiconductor Characteristics (Tj = 25C unless otherwise specified) _ 20 100 < Case _~ ~ w e 1.5 < 3 , Ambient & P x 2 8 o 10 g 10 ie Oo oO 3 a Z 05 I & > a 0 1 0 50 100 150 1 10 100 15630 Tamb Ambient Temperature ( C ) 15633 Vr Reverse Voltage ( V ) Figure 1. Max. Average Forward Current vs. Figure 4. Typ. Diode Capacitance vs. Reverse Voltage Ambient Temperature Ip Pulse Width = 300 us 10,000 10 ~ = 1000 < Tj= 150C = Tj= 180C 6 100 3 10 5 Tj = 125C oO oO CT oO , 3 10 Tj= 100C > o oO yO c 10 + a Tj= 25C 0.1 0 0.01 0 02 04 06 08 10 12 14 0 20 40 60 80 100 120 140 15631 Ve Forward Voltage ( V ) 15634 Percent of Rated Peak Reverse Voltage (%) Figure 2. Typ. Forward Current vs. Forward Voltage Figure 5. Typ. Reverse Current vs. Percent of Rated Peak Reverse Voltage = 100 150 < Il] T= *50 | |] e Single Half Sine-Wave 2 go (JEDEC Method) 8 o Iw Do 5 60 2 N g NI = 40 5 N Ww % 20 IN I INQ = N fe NN a 0 i 1 10 100 15632 Number of Cycles at 60 Hz Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles 2 (4) Rev. A2, 24-Jun-98, KBP2005GKBP210G VISHAY Vishay Lite-On Power Semiconductor Dimensions in mm L A KBP K _.|J Dim) Min Max A] 25 75 B | 10.20 10.60 a) C [2.29 Typical on D | 14.25 WP Fl 356 1.06 4 SN cl 076 0.86 Lt HT 1 7 J | 2.8x45 Chamfer H O K | 0.80 110 TY L| 335 3.65 M 3 Nominal y 1 N 2 Nominal P| 030 | 0.64 p C All Dimensions in mm E oe technical drawings according to DIN specifications 14473 Case: molded plastic Polarity: as marked on body Approx. weight: 1.52 grams Mounting position: any Marking: type number Rev. A2, 24-Jun-98 3 (4)KBP2005GKBP210G Vishay Lite-On Power Semiconductor VEISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. Itis particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the nextten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. AnnexA, Bandlist oftransitional substances ofthe Montreal Protocol andthe London Amendments respectively 2. Class | and Il ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 4 (4) Rev. A2, 24-Jun-98