AAHS298B
PRODUCT SPECIFICATION
Microsemi
Analog Mixed Signal Group
One Enterprise, Aliso Viejo, CA. 92656, (949) 380-1600
Page 1
Copyright 2012
Rev. 1.1 6/26/2012
WWW.Microsemi .COM
Radiation Tolerant 8-channel Source Driver
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AAHS298B
D E S C R I P T I O N
K E Y F E A T U R E S
The AAHS298B is part of
Microsemi’s new family of
Radiation Tolerant products aimed
at the military and aerospace
markets. The AAHS298B is a
Radiation-Tolerant source driver
with eight non-inverting channels,
with internal thermal shutdown.
Capable of providing an
interface from TTL, 5V or 12V logic
systems to relays, motors, solenoids,
and other loads, this device adds the
additional benefit of an internal
thermal shutdown and output
transient protection/clamp diodes
with sustaining voltages to 75V.
Each output is capable of
sourcing 700mA with a withstand
voltage of 75V over the full military
temperature range. The thermal
shutdown is intended to protect
against over-current and soft-start
occurrences.
The AAHS298B is offered in a
20-pin ceramic SOIC. The
AAHS298B has demonstrated
tolerance to 100kRad (Si) total dose,
as well as immunity to latch-up and
SEE tolerance. Available standard
screening includes Level “S” or
Level “B,” Other screening or
processing in line with our
capabilities can be supported to meet
customers’ requirements.
700mA Output Source Current
Low Quiescent Current Consumption
Full Channel Isolation to Prevent Fault Propagation
Internal Ground Clamp Diodes
75V Output Breakdown Voltage
TTL, 5V and 12V Logic Compatible
Internal Thermal Shutdown
Radiation tolerant to 100kRad(Si) Total Dose
-55ºC to +125ºC Temperature Range
Available 20-pin Ceramic Package
A P P L I C A T I O N S
Relay/Solenoid Drivers
Lamp/LED Drivers
Stepper and/or Servo Motor Drivers
Redundant Power Distribution
IMPORTANT: For the most current data, consult MICROSEMI’s website:
http://www.microsemi.com
P R O D U C T H I G H L I G H T
PACKAGE ORDER INFO
T H E R M A L D A T A
TA (C)
S20
20-Pin Ceramic SOIC
J-L = 15C/W
THERMAL RESISTANCE-JUNCTION TO LEAD
-55 to +125
AAHS298B-S-S20B-S
Class S
Junction Temperature Calculation: TJ = TA +
(PD x J-L).
The J-l numbers are guidelines for the thermal
performance of the device/pc-board system.
AAHS298B-S-S20B-B
Class B
0 to 70
AAHS298B-S-S20B-ENGR
Commercial
Note SOIC packing is in a tray.
AAHS298B
PRODUCT SPECIFICATION
Microsemi
Analog Mixed Signal Group
One Enterprise, Aliso Viejo, CA. 92656, (949) 380-1600
Page 2
Copyright 2012
Rev. 1.1 6/26/2012
WWW.Microsemi .COM
Radiation Tolerant 8-channel Source Driver
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AAHS298B
AA B S O L U T E M A X I M U M R A T I N G S
P A C K A G E P I N O U T
Supply Voltage (VS, Max voltage between VS and GND) ............................. -0.5V to 75V
Digital Inputs (IN[1:8], Max voltage between INPUT & GND).................... -0.5V to 15V
Output Voltage (OUT[1:8], Maximum voltage between OUT[1:8] and GND) ........... 75V
Single Output Continous Current (OUT[1:8]) ....................................................... -700mA
Multiple Output Simultaneously Continous Current (OUT[1:8]) ........................ -2800mA
ESD (all pins, HBM) ............................................................................................... 2000V
Thermal Resistance Junction to Lead .................................................................... 15°C/W
Junction Temperature Range ..................................................................... -55C to 150C
Storage Temperature Range ....................................................................... -65C to 150C
Peak Package Solder Reflow Temperature (40 seconds maximum exposure) .......... 260°C
Lead Temperature. (Soldering 10 seconds) ............................................................... 300°C
Notes: Exceeding these ratings could cause damage to the device. All voltages are with respect to
GND. Currents are positive into, negative out of specified terminal. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those
indicated under “Recommended Operating Conditions” are not implied. Exposure to
“Absolute Maximum Ratings” for extended periods may affect device reliability.
MSC-S
AAHS298B
1MN37
YYWW XXX
1
10 11
20
9
8
7
6
5
4
3
2
12
13
14
15
16
17
18
19
IN1
IN4
IN2
IN3
VS
IN5
IN8 OUT8
VS
IN6
IN7
GND
OUT7
OUT6
OUT5
OUT4
OUT2
OUT1
OUT3
GND
S20 PACKAGE
(Top View)
YYWW XXX = Year/Week/Serial Number
Class S marking shown i.e. MSC-S
E L E C T R I C A L C H A R A C T E R I S T I C S
Unless otherwise stated the following specifications apply over operating junction temperature of -55°C < Temp < 125°C, VS = 50V, up to 100kRad(Si) TID
Parameters
Symbol
Test Conditions/Comments
MIN
TYP
MAX
Units
Operating Supply Current
Standby Supply Current
ISLEEP
IN[1:8] = 0.0V, No Output Load
1
20
µA
Active Supply Current
IVS2.5
IN[1:8] = 2.5V, No Output Load
5
25
mA
Active Supply Current
IVS5
IN[1:8] = 5.0V, No Output Load
7
25
AC Characteristics
Output Turn On Delay Time
ton
Load = 470Ω, 100pF, VS = 45V
VIL = 0.8; VIH = 2.5V
2
µs
Output Turn Off Delay Time
toff
10
Output Rise Time (10% to 90%)
tR
2
Output Fall Time (90% to 10%)
tF
10
DC Characteristics
Supply Voltage Range
VS
10
50
V
Thermal Shutdown Trip
Temperature
THSDTRIP
135
155
175
ºC
Thermal Shutdown Reset
Temperature
THSDRST
Restarts at 125ºC
125
Input High Level
VIH
2.5
V
Input Low Level
VIL
0.8
Output Saturation at 350mA
VCESAT
IN[1:8] = 2.5V
1.7
2.2
Output Saturation at 500mA
VCESAT
1.8
2.3
Output Saturation at 700mA
VCESAT
2.1
2.7
AAHS298B
PRODUCT SPECIFICATION
Microsemi
Analog Mixed Signal Group
One Enterprise, Aliso Viejo, CA. 92656, (949) 380-1600
Page 3
Copyright 2012
Rev. 1.1 6/26/2012
WWW.Microsemi .COM
Radiation Tolerant 8-channel Source Driver
L
LX
X2
23
30
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AAHS298B
E L E C T R I C A L C H A R A C T E R I S T I C S
Unless otherwise stated the following specifications apply over operating junction temperature of -55°C < Temp < 125°C, VS = 50V, up to 100kRad(Si) TID
Parameters
Symbol
Test Conditions/Comments
MIN
TYP
MAX
Units
Input High Leakage
IIH
IN[1:8] = 5.0V
60
100
µA
Input Low Leakage
IIL
IN[1:8] = 0.0V
0.1
10
µA
Output Low Leakage
IOL
Output OFF, VOUTX = 0.0V.
2
50
µA
Clamp Diode Forward Voltage
VF
IF = 200mA
IF = 700mA
2.5
3.0
V
Clamp Diode Leakage Current
IR
VR = 50V
50
µA
F U N C T I O N A L B L O C K D I A G R A M
Figure 1. Functional Block Diagram.
F U N C T I O N A L P I N D E S C R I P T I O N
Pin Number
Pin Name
Function
2-9
INPUT[1:8]
8 LOGIC Inputs
1, 10
VS
Supply Voltage
11, 20
GND
Ground
12-19
OUTPUT[1:8]
700mA Output
AAHS298B
PRODUCT SPECIFICATION
Microsemi
Analog Mixed Signal Group
One Enterprise, Aliso Viejo, CA. 92656, (949) 380-1600
Page 4
Copyright 2012
Rev. 1.1 6/26/2012
WWW.Microsemi .COM
Radiation Tolerant 8-channel Source Driver
L
LX
X2
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AAHS298B
T Y P I C A L C H A R A C T E R I S T I C C H A R T
P A C K A G E D I M E N S I O N S
S
20 Lead Ceramic SOIC
E
e
A2
A1
c
BL
E1
D
1 10
1120
Seating Plane
A
1
E2
Dim
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
A
2.16
2.92
0.085
0.115
A1
0.38
0.015
A2
1.78
2.41
0.070
0.095
b
0.36
0.48
0.015
0.020
c
0.15
0.30
0.006
0.012
D
12.45
13.08
0.490
0.515
E
10.16
11.18
0.400
0.440
E1
7.11
7.87
0.280
0.310
E2
4.70 BSC
0.185 BSC
e
1.27 BSC
0.050 BSC
Note:
1. Dimensions are in inches, mm for reference only
1.2
1.4
1.6
1.8
2.0
2.2
2.4
-55 -35 -15 5 25 45 65 85 105 125
VCESat (V)
Temperature (°C)
AAHS298B OUTPUT VCE SATURATION VOLTAGE VS TEMPERATURE
500mA
350mA
700mA
AAHS298B
PRODUCT SPECIFICATION
Microsemi
Analog Mixed Signal Group
One Enterprise, Aliso Viejo, CA. 92656, (949) 380-1600
Page 5
Copyright 2012
Rev. 1.1 6/26/2012
WWW.Microsemi .COM
Radiation Tolerant 8-channel Source Driver
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AAHS298B
N O T E S
PRODUCTION DATA – Information contained in this document is proprietary to
Microsemi and is current as of publication date. This document may not be modified in
any way without the express written consent of Microsemi. Product processing does not
necessarily include testing of all parameters. Microsemi reserves the right to change the
configuration and performance of the product and to discontinue product at any time.