AAHS298B Radiation Tolerant 8-channel Source Driver P RODUCT S PECIFICATION DESCRIPTION IMPORTANT: For the http://www.microsemi.com most current Each output is capable of sourcing 700mA with a withstand voltage of 75V over the full military temperature range. The thermal shutdown is intended to protect against over-current and soft-start occurrences. The AAHS298B is offered in a 20-pin ceramic SOIC. The AAHS298B has demonstrated tolerance to 100kRad (Si) total dose, as well as immunity to latch-up and SEE tolerance. Available standard screening includes Level "S" or Level "B," Other screening or processing in line with our capabilities can be supported to meet customers' requirements. data, consult MICROSEMI's 700mA Output Source Current Low Quiescent Current Consumption Full Channel Isolation to Prevent Fault Propagation Internal Ground Clamp Diodes 75V Output Breakdown Voltage TTL, 5V and 12V Logic Compatible Internal Thermal Shutdown Radiation tolerant to 100kRad(Si) Total Dose -55C to +125C Temperature Range Available 20-pin Ceramic Package W W W. Microsemi .CO M The AAHS298B is part of Microsemi's new family of Radiation Tolerant products aimed at the military and aerospace markets. The AAHS298B is a Radiation-Tolerant source driver with eight non-inverting channels, with internal thermal shutdown. Capable of providing an interface from TTL, 5V or 12V logic systems to relays, motors, solenoids, and other loads, this device adds the additional benefit of an internal thermal shutdown and output transient protection/clamp diodes with sustaining voltages to 75V. KEY FEATURES APPLICATIONS Relay/Solenoid Drivers Lamp/LED Drivers Stepper and/or Servo Motor Drivers Redundant Power Distribution website: PRODUCT HIGHLIGHT TA (C) S20 THERMAL DATA 20-Pin Ceramic SOIC J-L = 15C/W THERMAL RESISTANCE-JUNCTION TO LEAD -55 to +125 0 to 70 AAHS298B-S-S20B-S AAHS298B-S-S20B-B AAHS298B-S-S20B-ENGR Class S Class B Commercial Note SOIC packing is in a tray. Copyright 2012 Rev. 1.1 6/26/2012 Microsemi Analog Mixed Signal Group One Enterprise, Aliso Viejo, CA. 92656, (949) 380-1600 Junction Temperature Calculation: TJ = TA + (PD x J-L). The J-l numbers are guidelines for the thermal performance of the device/pc-board system. Page 1 AAHS298B PACKAGE ORDER INFO AAHS298B Radiation Tolerant 8-channel Source Driver P RODUCT S PECIFICATION AABSOLUTE MAXIMUM RATINGS PACKAGE PIN OUT 1 20 2 19 3 18 4 5 6 7 8 GND OUT1 OUT2 OUT3 OUT4 OUT5 OUT6 OUT7 OUT8 GND 17 16 15 14 13 9 12 10 11 W W W. Microsemi .CO M Notes: Exceeding these ratings could cause damage to the device. All voltages are with respect to GND. Currents are positive into, negative out of specified terminal. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" are not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. VS IN1 IN2 IN3 IN4 IN5 IN6 IN7 IN8 VS MSC-S AAHS298B 1MN37 YYWW XXX Supply Voltage (VS, Max voltage between VS and GND) ............................. -0.5V to 75V Digital Inputs (IN[1:8], Max voltage between INPUT & GND).................... -0.5V to 15V Output Voltage (OUT[1:8], Maximum voltage between OUT[1:8] and GND) ........... 75V Single Output Continous Current (OUT[1:8]) ....................................................... -700mA Multiple Output Simultaneously Continous Current (OUT[1:8]) ........................ -2800mA ESD (all pins, HBM) ............................................................................................... 2000V Thermal Resistance Junction to Lead .................................................................... 15C/W Junction Temperature Range ..................................................................... -55C to 150C Storage Temperature Range ....................................................................... -65C to 150C Peak Package Solder Reflow Temperature (40 seconds maximum exposure) .......... 260C Lead Temperature. (Soldering 10 seconds)............................................................... 300C S20 PACKAGE (Top View) YYWW XXX = Year/Week/Serial Number Class S marking shown i.e. MSC-S ELECTRICAL CHARACTERISTICS Unless otherwise stated the following specifications apply over operating junction temperature of -55C < Temp < 125C, VS = 50V, up to 100kRad(Si) TID Parameters Symbol Test Conditions/Comments MIN TYP MAX Units A Operating Supply Current Standby Supply Current ISLEEP IN[1:8] = 0.0V, No Output Load 1 20 Active Supply Current IVS2.5 IN[1:8] = 2.5V, No Output Load 5 25 Active Supply Current IVS5 IN[1:8] = 5.0V, No Output Load 7 25 mA AC Characteristics Output Turn On Delay Time ton Output Turn Off Delay Time toff Output Rise Time (10% to 90%) tR Output Fall Time (90% to 10%) tF 2 10 Load = 470, 100pF, VS = 45V VIL = 0.8; VIH = 2.5V s 2 10 DC Characteristics Supply Voltage Range 10 THSDTRIP 135 155 V 175 C THSDRST Input High Level VIH Input Low Level VIL Output Saturation at 350mA VCESAT Output Saturation at 500mA VCESAT Output Saturation at 700mA VCESAT Copyright 2012 Rev. 1.1 6/26/2012 50 Restarts at 125C 125 2.5 0.8 IN[1:8] = 2.5V Microsemi Analog Mixed Signal Group One Enterprise, Aliso Viejo, CA. 92656, (949) 380-1600 1.7 2.2 1.8 2.3 2.1 2.7 V Page 2 AAHS298B Thermal Shutdown Trip Temperature Thermal Shutdown Reset Temperature VS AAHS298B Radiation Tolerant 8-channel Source Driver P RODUCT S PECIFICATION ELECTRICAL CHARACTERISTICS Unless otherwise stated the following specifications apply over operating junction temperature of -55C < Temp < 125C, VS = 50V, up to 100kRad(Si) TID Symbol Test Conditions/Comments MIN TYP MAX Units Input High Leakage IIH IN[1:8] = 5.0V 60 100 A Input Low Leakage IIL IN[1:8] = 0.0V 0.1 10 A Output Low Leakage IOL Output OFF, VOUTX = 0.0V. 2 50 A Clamp Diode Forward Voltage VF IF = 200mA IF = 700mA 2.5 3.0 V Clamp Diode Leakage Current IR VR = 50V 50 A W W W. Microsemi .CO M Parameters FUNCTIONAL PIN DESCRIPTION Pin Number Pin Name Function 2-9 INPUT[1:8] 8 LOGIC Inputs 1, 10 VS Supply Voltage 11, 20 GND 12-19 OUTPUT[1:8] Ground 700mA Output FUNCTIONAL BLOCK DIAGRAM AAHS298B Figure 1. Functional Block Diagram. Copyright 2012 Rev. 1.1 6/26/2012 Microsemi Analog Mixed Signal Group One Enterprise, Aliso Viejo, CA. 92656, (949) 380-1600 Page 3 AAHS298B Radiation Tolerant 8-channel Source Driver P RODUCT S PECIFICATION TYPICAL CHARACTERISTIC CHART W W W. Microsemi .CO M AAHS298B OUTPUT VCE SATURATION VOLTAGE VS TEMPERATURE 2.4 2.2 VCESat (V) 2.0 1.8 1.6 500mA 350mA 700mA 1.4 1.2 -55 -35 -15 5 25 45 65 85 105 125 Temperature (C) PACKAGE DIMENSIONS S 20 Lead Ceramic SOIC D 20 11 E E2 E1 1 A 1 L B A2 c Seating Plane MILLIMETERS MIN MAX 2.16 2.92 0.38 1.78 2.41 0.36 0.48 0.15 0.30 12.45 13.08 10.16 11.18 7.11 7.87 4.70 BSC 1.27 BSC INCHES MIN MAX 0.085 0.115 0.015 0.070 0.095 0.015 0.020 0.006 0.012 0.490 0.515 0.400 0.440 0.280 0.310 0.185 BSC 0.050 BSC AAHS298B e 10 Dim A A1 A2 b c D E E1 E2 e A1 Note: 1. Copyright 2012 Rev. 1.1 6/26/2012 Dimensions are in inches, mm for reference only Microsemi Analog Mixed Signal Group One Enterprise, Aliso Viejo, CA. 92656, (949) 380-1600 Page 4 AAHS298B Radiation Tolerant 8-channel Source Driver P RODUCT S PECIFICATION NOTES W W W. Microsemi .CO M AAHS298B PRODUCTION DATA - Information contained in this document is proprietary to Microsemi and is current as of publication date. This document may not be modified in any way without the express written consent of Microsemi. Product processing does not necessarily include testing of all parameters. Microsemi reserves the right to change the configuration and performance of the product and to discontinue product at any time. Copyright 2012 Rev. 1.1 6/26/2012 Microsemi Analog Mixed Signal Group One Enterprise, Aliso Viejo, CA. 92656, (949) 380-1600 Page 5