DMC3021LSD-13 - DIODES Incorporated

DMC3021LSD

Document number: DS32152 Rev. 1 - 2 1 of 8

www.diodes.com May 2010

DMC3021LSD

NEW PRODUCT

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

• N-Channel: 21mΩ @ 10V

32mΩ @ 4.5V

• P-Channel: 39mΩ @ 10V

53mΩ @ 4.5V

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Complementary Pair MOSFET

• Lead Free/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals Connections: See Diagram

• Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 6

• Ordering Information: See Page 6

• Weight: 0.072 grams (approximate)

Maximum Ratings N-CHANNEL – Q1 @TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit

Drain-Source Voltage VDSS 30 V

Gate-Source Voltage VGSS ±20 V

Continuous Drain Current (Note 3) Steady

State TA = 25°C

TA = 85°C ID 8.5

7.1 A

Pulsed Drain Current (Note 4) IDM 26 A

Maximum Ratings P-CHANNEL – Q2 @TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit

Drain-Source Voltage VDSS -30 V

Gate-Source Voltage VGSS ±20 V

Continuous Drain Current (Note 3) Steady

State TA = 25°C

TA = 85°C ID -7.0

-4.5 A

Pulsed Drain Current (Note 4) IDM -25 A

Thermal Characteristics @TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit

Power Dissipation (Note 3) PD 2.5 W

Thermal Resistance, Junction to Ambient (Note 3) RθJA 50 °C/W

Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB, with minimum recommended pad layout.

4. Repetitive rating, pulse width limited by junction temperature.

SO-8

Top View Top View

D

1

S

1

G

1

D

2

S

2

G

2

N-Channel MOSFET P-Channel MOSFET

S2

D1

S1

D2

G1

G2 D2

D1

DMC3021LSD

Document number: DS32152 Rev. 1 - 2 2 of 8

www.diodes.com May 2010

DMC3021LSD

NEW PRODUCT

Electrical Characteristics N-CHANNEL – Q1 @TA = 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage BVDSS 30 - - V

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current TJ = 25°C IDSS - - 1.0

μA VDS = 30V, VGS = 0V

Gate-Source Leakage IGSS - - ±100 nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage VGS

(

th

)

1 1.45 2.1 V

VDS = VGS, IC = 250μA

Static Drain-Source On-Resistance RDS (ON) - 14 21 mΩ VGS = 10V, IC = 7A

18 32 VGS = 4.5V, IC = 5.6A

Forward Transfer Admittance |Yfs| - 8.1 - S

VDS = 5V, IC = 7A

Diode Forward Voltage (Note 5) VSD - 0.7 1.0 V

VGS = 0V, IS = 1A

DYNAMIC CHARACTERISTICS (Note 6)

Input Capacitance Ciss - 767 - pF VDS = 10V, VGS = 0V,

f = 1.0MHz

Output Capacitance Coss - 110 - pF

Reverse Transfer Capacitance Crss - 105 - pF

Gate Resistance R

g

- 1.4 - Ω VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (4.5V) Q

g

- 7.8 - nC VGS = 10V, VDS = 15V,

ID = 9A

Total Gate Charge (10V) Q

g

- 16.1 - nC

Gate-Source Charge Q

g

s - 1.8 - nC

Gate-Drain Charge Q

g

d - 2.5 - nC

Turn-On Delay Time tD

(

on

)

- 5.0 - ns

VGS = 10V, VDS = 15V,

RG = 6Ω , ID = 1A

Turn-On Rise Time t

r

- 4.5 - ns

Turn-Off Delay Time tD

(

off

)

- 26.3 - ns

Turn-Off Fall Time tf - 8.55 - ns

0 0.5 1 1.5 2

Fig. 1 Typical Output Characteristics

V , DRAIN-SOURCE VOL TAGE (V)

DS

0

5

10

15

30

I, D

R

AI

N

C

U

R

E

N

T

(A)

D

25

20

V = 2.0V

GS

V = 2.5V

GS

V = 3.0V

GS

V = 4.5V

GS

V = 8.0V

GS

0

5

10

15

20

25

30

012 34

Fig. 2 Typical Transfer Characteristics

V , GA T E SOURCE VOL TAGE (V)

GS

I, D

R

AIN

C

U

R

EN

T

(A)

D

V = 5V

DS

T = -55°C

A

T = 25°C

A

T = 125°C

A

T = 150°C

A

T = 85°C

A

DMC3021LSD

Document number: DS32152 Rev. 1 - 2 3 of 8

www.diodes.com May 2010

DMC3021LSD

NEW PRODUCT

0.01

0.1

1

0 5 10 15 20 25 30

Fig. 3 Typical On-Resistance

vs . Dr ai n Cu rrent and G at e Vol t age

I , DRAIN-SOURCE CURRENT (A)

D

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON)

Ω

V = 4.5V

GS

V = 2.5V

GS

0 5 10 15 20 25 30

I , DRAIN CURRENT (A)

Fig. 4 Typical Drain-Source On-Resistance

vs . Dr ai n Cu rrent and Tem per at ur e

D

0

0.01

0.02

0.03

0.06

R

, D

R

AI

N

-S

O

U

R

C

E

O

N

-

R

ESIS

T

A

N

C

E ( )

DS(ON)

Ω

0.05

0.04

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V = 4.5V

GS

0.6

0.8

1.0

1.2

1.4

1.6

Fig. 5 On-Resistance V ariation with Temperature

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE (°C)

J

R , DRAIN-SOURCE

ON-RESISTANCE (NORMALIZED)

DS(ON)

V = 10V

I = 11.6A

GS

D

V = 4.5V

I = 10A

GS

D

Fig. 6 On-R esist ance Variat io n with Tem per at ur e

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE (°C)

J

0

0.01

0.02

0.03

0.0

5

R

, D

R

AI

N

-S

O

U

R

C

E

O

N

-

R

ESIS

T

A

N

C

E ( )

DS(ON)

Ω

0.04

V = 10V

I = 11.6 A

GS

D

V = 4.5V

I = 10A

GS

D

0

0.4

0.8

1.2

1.6

2.0

2.4

Fig. 7 Gate Threshold V ariation vs. Ambient Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERA TURE (°C)

A

V , GATE THRESHOLD VOLT AGE (V)

GS(TH)

I = 1mA

D

I = 250µA

D

0

4

8

12

16

20

0 0.2 0.4 0.6 0.8 1.0 1.2

V , SOURCE-DRAIN VOLTAGE (V)

SD

Fi g. 8 Dio de For war d Vol t ag e vs. Cur r ent

I, S

O

U

R

C

E

C

U

R

ENT (A)

S

T = 25°C

A

DMC3021LSD

Document number: DS32152 Rev. 1 - 2 4 of 8

www.diodes.com May 2010

DMC3021LSD

NEW PRODUCT

10

100

1,000

10,000

0 5 10 15 20 25 30

Fig. 9 Typical Capacitance

V , DRAIN-SOURCE VOLTAGE (V)

DS

C

,

C

A

P

A

C

I

T

AN

C

E (p

F

)

f = 1MHz

C

iss

C

oss

C

rss

0 5 10 15 20 25 30

Fig. 10 Typical Drain-Source Leakage Current

vs. Drain-Source Voltage

V , DRAIN-SOURCE VOLTAGE (V)

DS

1

10

100

1,000

10,000

I, D

R

AIN-S

O

U

R

C

E LEAKA

G

E

C

U

R

EN

T

(nA)

DSS

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

Electrical Characteristics P-CHANNEL @TA = 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage BVDSS -30 - - V

VGS = 0V, ID = -250μA

Zero Gate Voltage Drain Current TJ = 25°C IDSS - - -1.0

μA VDS = -30V, VGS = 0V

Gate-Source Leakage IGSS - - ±100 nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage VGS

(

th

)

-1 -1.7 -2.2 V

VDS = VGS, ID = -250μA

Static Drain-Source On-Resistance RDS (ON) - 30 39 mΩ VGS = -10V, ID = -4.3A

42 53 VGS = -4.5V, ID = -3.7A

Forward Transfer Admittance |Yfs| - 7 - S

VDS = -5V, ID = -4.3A

Diode Forward Voltage (Note 5) VSD - -0.75 -1.0 V

VGS = 0V, IS = -1.7A

DYNAMIC CHARACTERISTICS (Note 6)

Input Capacitance Ciss - 1002 - pF VDS = -10V, VGS = 0V,

f = 1.0MHz

Output Capacitance Coss - 125 - pF

Reverse Transfer Capacitance Crss - 118 - pF

Gate Resistance R

g

- 13 - Ω VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (4.5V) Q

g

- 10.1 - nC VGS = -4.5V, VDS = -15V,

ID = -6A

Total Gate Charge (10V) Q

g

- 21.1 - nC

Gate-Source Charge Q

g

s - 2.8 - nC

Gate-Drain Charge Q

g

d - 3.2 - nC

Turn-On Delay Time tD

(

on

)

- 10.1 - ns

VGS = -10V, VDS = -15V,

RG = 6Ω , ID = -1A

Turn-On Rise Time t

r

- 6.5 - ns

Turn-Off Delay Time tD

(

off

)

- 50.1 - ns

Turn-Off Fall Time tf - 22.2 - ns

Notes: 5. Short duration pulse test used to minimize self-heating effect.

6. Guaranteed by design. Not subject to production testing.

DMC3021LSD

Document number: DS32152 Rev. 1 - 2 5 of 8

www.diodes.com May 2010

DMC3021LSD

NEW PRODUCT

0

5

10

15

20

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

Fig . 11 Typi ca l O ut put C har act eristics

V , DRAIN-SOURCE VOL TAGE (V)

DS

I, D

R

AI

N

C

U

R

E

N

T

(A)

D

V = 2.5V

GS

V = 3.0V

GS

V = 4.5V

GS

V = 10V

GS

V = 3.5V

GS

V = 4.0V

GS

0

5

10

15

20

0123456

Fig. 12 Typical Transfer Characteristics

V , GATE SOURCE VOLTAGE (V)

GS

I, D

R

AIN

C

U

R

EN

T

(A)

D

V = 5V

DS

T = -55°C

A

T = 25°C

A

T = 125°C

A

T = 150°C

A

T = 85°C

A

0 5 10 15 20

Fig. 13 Typical On-Resistance

vs . Dr ai n Cu r re nt and G at e Voltage

I , DRAIN-SOURCE CURRENT (A)

D

0

0.02

0.04

0.06

0.10

R

, D

R

AIN-S

O

U

R

C

E

O

N-

R

ESIS

T

AN

C

E ( )

DS(ON)

Ω

0.08

V = 10V

GS

V = 4.5V

GS

0

0.02

0.04

0.06

0.08

0.10

0 5 10 15 20

R

, D

R

AIN-S

O

U

R

C

E

O

N-

R

ESIS

T

AN

C

E ( )

DS(ON)

Ω

I , DRAIN CURRENT (A)

Fig. 14 Typical Drain-Source On-Resistance

vs . Dr ain C urr ent and Temp er atu r e

D

V = 10V

GS

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

0.5

0.7

0.9

1.1

1.3

1.5

1.7

Fig. 15 On-Resistance Variation with Temperature

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERA TURE (°C)

J

R , DRAIN-SOURCE

ON-RESISTANCE (NORMALIZED)

DS(ON)

V = 10V

I = 10A

GS

D

V = 4.5V

I = 5A

GS

D

Fig. 16 On-Resistance Variation with Temperature

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE (°C)

J

0

0.01

0.02

0.03

0.04

0.05

0.08

R

, D

R

AIN-S

O

U

R

C

E

O

N-

R

ESIS

T

AN

C

E ( )

DS(ON)

Ω

0.07

0.06

V = 10V

I = 10A

GS

D

V = 4.5V

I = 5A

GS

D

DMC3021LSD

Document number: DS32152 Rev. 1 - 2 6 of 8

www.diodes.com May 2010

DMC3021LSD

NEW PRODUCT

0

0.5

1.0

1.5

2.0

2.5

Fig. 17 Gate Threshold Variation vs. Ambient Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERA TURE (°C)

A

V , GATE THRESHOLD VOLTAGE (V)

GS(TH)

I = 1mA

D

I = 250µA

D

0.4 0.6 0.8 1.0 1.2 1.4

V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 18 Diode Forward Voltage vs. Current

0

4

8

12

16

20

I, S

O

U

R

C

E

C

U

R

EN

T

(A)

S

T = 25°C

A

10

100

1,000

10,000

0 5 10 15 20 25 30

Fig. 19 Typical Capacitance

V , DRAIN-SOURCE VOLTAGE (V)

DS

C

,

C

A

P

A

C

I

T

AN

C

E (p

F

)

f = 1MHz

C

iss

C

oss

C

rss

0 5 10 15 20 25 30

Fig. 20 Typical Drain-Source Leakage Current

vs. D r ai n- So ur ce Volta g e

V , DRAIN-SOURCE VOL TAGE (V)

DS

1

10

100

1,000

I, D

R

AIN-S

O

U

R

C

E LEAKA

G

E

C

U

R

EN

T

(nA)

DSS

10,000

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

Ordering Information (Note 7)

Part Number Case Packaging

DMC3021LSD-13 SO-8 2500/Tape & Reel

Notes: 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

Top View

Logo

Part no.

Year: “10” = 2010

Xth week: 01 ~ 53

1 4

8 5

C3021LD

YY WW

DMC3021LSD

Document number: DS32152 Rev. 1 - 2 7 of 8

www.diodes.com May 2010

DMC3021LSD

NEW PRODUCT

Package Outline Dimensions

Suggested Pad Layout

SO-8

Dim Min Max

A - 1.75

A1 0.10 0.20

A2 1.30 1.50

A3 0.15 0.25

b 0.3 0.5

D 4.85 4.95

E 5.90 6.10

E1 3.85 3.95

e 1.27 Typ

h - 0.35

L 0.62 0.82

θ 0° 8°

All Dimensions in mm

Dimensions Value (in mm)

X 0.60

Y 1.55

C1 5.4

C2 1.27

Gauge Plane

Seating Plane

Det ail ‘A’

E

E1

h

L

D

eb

A2

A1

A

45

°

7

°~

9

°

A3

0.254

X

C1

C2

Y

DMC3021LSD

Document number: DS32152 Rev. 1 - 2 8 of 8

www.diodes.com May 2010

DMC3021LSD

NEW PRODUCT

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated p roducts for any unintended or una uthorized application, Customers shall indemnify and

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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

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noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their pro ducts and an y

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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