AP9985GM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-Resistance D D Fast Switching Speed D D BVDSS 40V RDS(ON) 15m ID Surface Mount Package SO-8 S S S 10A G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G S Absolute Maximum Ratings Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25 ID@TA=70 Rating Units 40 V 20 V Continuous Drain Current 3 10 A Continuous Drain Current 3 8 A 48 A 1 IDM Pulsed Drain Current PD@TA=25 Total Power Dissipation 2.5 W Linear Derating Factor 0.02 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-amb Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 50 /W 1 200811132 AP9985GM Electrical Characteristics@T j=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. 40 - - V - 0.032 - V/ VGS=10V, ID=10A - - 15 m VGS=4.5V, ID=5A - - 25 m BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=0V, ID=250uA 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=10A - 35 - S IDSS Drain-Source Leakage Current VDS=40V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70oC) VDS=32V ,VGS=0V - - 25 uA Gate-Source Leakage VGS= 20V - - 100 nA ID=10A - 14.7 - nC IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=20V - 7.1 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 6.8 - nC VDS=20V - 11.5 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=1A - 6.3 - ns td(off) Turn-off Delay Time RG=3.3,VGS=10V - 28.2 - ns tf Fall Time RD=20 - 12.6 - ns Ciss Input Capacitance VGS=0V - 1725 - pF Coss Output Capacitance VDS=25V - 235 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 145 - pF Min. Typ. VD=VG=0V , VS=1.3V - - 1.92 A Tj=25, IS=2.3A, VGS=0V - - 1.3 V Source-Drain Diode Symbol IS VSD Parameter Continuous Source Current ( Body Diode ) Forward On Voltage 2 Test Conditions Max. Units Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 /W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9985GM 50 50 T A =25 o C 40 ID , Drain Current (A) ID , Drain Current (A) 40 30 V G = 4.0 V 20 10V 6.0V 5.0V 4.5V o T A = 150 C 10V 6.0V 5.0V 4.5V 10 30 V G = 4 .0 V 20 10 0 0 0 1 2 3 4 0 1 2 3 4 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 70 I D =10A V G =10V I D =10A T A =25 60 Normalized RDS(ON) RDS(ON) (m) 1.6 50 40 30 1.2 0.8 20 10 0.4 2 4 6 8 10 -50 0 V GS , Gate-to-Source Voltage (V) 150 T j , Junction Temperature ( C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 10 2.8 8 2.4 VGS(th) (V) IS(A) 100 o Fig 3. On-Resistance v.s. Gate Voltage 6 T j =150 o C 50 T j =25 o C 2.0 4 1.6 2 1.2 0.8 0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 -25 0 25 50 75 100 125 150 T j , Junction Temperature (oC) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9985GM f=1.0MHz 2400 12 2000 V DS =12V V DS =16V V DS =20V 8 C iss 1600 C (pF) VGS , Gate to Source Voltage (V) I D =10A 10 6 1200 4 800 2 400 C oss C rss 0 0 0 4 8 12 16 20 1 24 5 9 Q G , Total Gate Charge (nC) 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 100us 10 ID (A) 1ms 10ms 1 100ms 1s 0.1 T A =25 o C Single Pulse DC 0.01 Normalized Thermal Response (Rthja) Duty factor=0.5 0.2 0.1 0.1 0.05 0.02 PDM 0.01 t 0.01 T Single Pulse Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthia=125 /W 0.001 0.01 0.1 1 10 100 0.0001 0.001 0.01 Fig 9. Maximum Safe Operating Area 0.1 1 10 100 1000 t , Pulse Width (s) V DS , Drain-to-Source Voltage (V) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : SO-8 D Millimeters 8 7 6 5 E1 1 2 3 4 e B E SYMBOLS MIN NOM MAX A 1.35 1.55 1.75 A1 0.10 0.18 0.25 B 0.33 0.41 0.51 c 0.19 0.22 0.25 D 4.80 4.90 5.00 E 5.80 6.15 6.50 E1 3.80 3.90 4.00 e 1.27 TYP G 0.254 TYP L 0.38 0.90 0.00 4.00 8.00 A A1 G 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : SO-8 Part Number Package Code meet Rohs requirement 9985GM YWWSSS Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence 5