Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low On-Resistance BVDSS 40V
▼ Fast Switching Speed RDS(ON) 15mΩ
▼ Surface Mount Package ID10A
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TA=25℃A
ID@TA=70℃A
IDM A
PD@TA=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-amb Maximum Thermal Resistance, Junction-ambient350 ℃/W
Data and specifications subject to change without notice 1
AP9985GM
RoHS-compliant Product
200811132
Parameter Rating
Drain-Source Voltage 40
Gate-Source Voltage ± 20
Continuous Drain Current310
Continuous Drain Current38
Pulsed Drain Current148
Total Power Dissipation 2.5
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.02
Thermal Data
Parameter
Storage Temperature Range
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
SSSG
DDDD
SO-8
G
D
S
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 40 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.032 -V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=10A - - 15 mΩ
VGS=4.5V, ID=5A - - 25 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=10A - 35 - S
IDSS Drain-Source Leakage Current VDS=40V, VGS=0V - - 1 uA
Drain-Source Leakage Current (Tj=70oC) VDS=32V ,VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS= ± 20V - - ±100 nA
QgTotal Gate Charge2ID=10A - 14.7 - nC
Qgs Gate-Source Charge VDS=20V - 7.1 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 6.8 - nC
td(on) Turn-on Delay Time2VDS=20V - 11.5 - ns
trRise Time ID=1A - 6.3 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 28.2 - ns
tfFall Time RD=20Ω- 12.6 - ns
Ciss Input Capacitance VGS=0V - 1725 - pF
Coss Output Capacitance VDS=25V - 235 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 145 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
ISContinuous Source Current ( Body Diode ) VD=VG=0V , VS=1.3V - - 1.92 A
VSD Forward On Voltage2Tj=25℃, IS=2.3A, VGS=0V - - 1.3 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9985GM
AP9985GM
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fi
g
5. Forward Characteristic o
f
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0
10
20
30
40
50
01234
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
VG=4.0V
10V
6.0V
5.0V
4.5V
TA=25oC
0
10
20
30
40
50
01234
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=150oC 10V
6.0V
5.0V
4.5V
VG=4.0V
10
20
30
40
50
60
70
246810
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
I
D=10A
TA=25
℃
0.4
0.8
1.2
1.6
2.0
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
I
D=10A
VG=10V
0.8
1.2
1.6
2.0
2.4
2.8
-50 -25 0 25 50 75 100 125 150
Tj , Junction Temperature (oC)
VGS(th) (V)
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8 1 1.2
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oCTj=150oC
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
AP9985GM
Q
VG
4.5V
QGS QGD
QG
Charge
0
2
4
6
8
10
12
0 4 8 12 16 20 24
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
ID=10A
VDS =12V
VDS =16V
V DS =20V
0
400
800
1200
1600
2000
2400
1 5 9 13 17 21 25 29
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
Normalized Th e rmal Re spon se (Rthja)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthia=125 ℃/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0.1
1
10
100
0.01 0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
ID (A)
TA=25oC
Single Pulse
100us
1ms
10ms
100ms
1s
DC
td(on) trtd(off) tf
VDS
VGS
10%
90%
Millimeters
SYMBOLS MIN NOM MAX
A 1.35 1.55 1.75
A1 0.10 0.18 0.25
B 0.33 0.41 0.51
c 0.19 0.22 0.25
D 4.80 4.90 5.00
E 5.80 6.15 6.50
E1 3.80 3.90 4.00
e
G
L 0.38 －0.90
α0.00 4.00 8.00
1.All Dimension Are In Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : SO-8
1.27 TYP
0.254 TYP
Package Outline : SO-8
ADVANCED POWER ELECTRONICS CORP.
e
B
134
5678
2
D
E1
A1
A
G
Part Number
9985G
M
YWWSSS
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
E
5
meet Rohs requirement
