SEMICONDUCTOR TIP41C TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES *Complementary to TIP42C. MAXIMUM RATING (Ta=25) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V DC IC 6 Pulse ICP 10 IB 2 A 2 W 65 W Tj 150 Tstg -55150 Collector Current A Base Current Collector Power Ta=25 Dissipation Tc=25 PC Junction Temperature Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VCEO(SUS) IC=30mA, IB=0 100 - - V Collector Cut-off Current ICEO VCE=60V, IB=0 - - 0.7 mA Collector Cut-off Current ICES VCE=100V, VEB=0 - - 400 A Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 1 mA VCE=4V, IC=0.3A 30 - - DC Current Gain hFE VCE=4V, IC=3A 15 - 75 Collector Emitter Sustaining Voltage Collector-Emitter Saturation Voltage VCE(sat) IC=6A, IB=600mA - - 1.5 V Base-Emitter On Voltage VBE(on) VCE=4V, IC=6A - - 2.0 V 3.0 - - MHz fT Transition Frequency 1999. 11. 16 Revision No : 1 VCE=10V, IC=500mA 1/2 TIP41C 1999. 11. 16 Revision No : 1 2/2