MB39A214PFT - Fujitsu Semiconductor

2011.3

FUJITSU SEMICONDUCTOR

DATA SHEET DS04-27280-2E

ASSP for Power Management Applications

2ch DC/DC converter IC

with PFM/ PWM synchronous rectification

MB39A214

 DESCRIPTION

MB39A214 is a N-ch/ N-ch synchronous rectification type 2ch Buck DC/DC converter IC equipped with a

bottom detection comparator for low output voltage ripple. It supports low on-duty operation to allow stable

output of low voltages when there is a large difference between input and output voltages. It also allows the

high switching frequency setting, enabling the downsized peripheral circuits and low-cost configuration.

MB39A214 realizes ultra-rapid response and high efficiency with built-in enhanced protection features. It is

most suitable for the power supply for ASIC or FPGA core, input/output devices, or memory.

 FEATURES

y High efficiency

y Frequency setting by internal preset function : 310 kHz, 620 kHz, 1 MHz

y High accuracy reference voltage : ± 0.7% (Ta = + 25 °C)

y VIN Input voltage range : 6 V to 28 V

y Output voltage setting range : 0.7 V to 5.3 V

y Possible to select the automatic PFM/PWM selection mode or PWM-fixed mode

y PAF frequency limitation function (Prohibit Audio Frequency) : > 30 kHz (Min)

y Built-in boost diode, external fly-back diode not required

y Built-in discharge FET

y Built-in over voltage protection function

y Built-in under voltage protection function

y Built-in over temperature protection function

y Built-in over current limitation function

y Soft-start circuit without load dependence

y Current sense resistor not required

y Built-in synchronous rectification type output steps for N-ch MOS FET

y Standby current : 0 µA (Typ)

y Package : TSSOP24 (4.4 mm°6.5 mm°1.2 mm [Max])

 APPLICATIONS

y Digital TV

y Photocopiers

y STB

y BD, DVD players/recorders

y Projector s etc.

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

 PIN ASSIGNMENT

(TOP VIEW)

DRVH1

LX1

DRVL1

PGND

ILIM1

VCC

MODE

ILIM2

DRVL2

LX2

DRVH

BST1

EN1

VOUT1

FB1

CS1

GND

FREQ

CS2

FB2

VOUT2

EN2

BST2

(FPT-24P-M09)

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

 PIN DESCRIPTIONS

Pin No. Pin Name I/O Description

1 BST1 — CH1 boost capacitor connection pin.

2 EN1 I CH1 enable pin.

3 VOUT1 I CH1 input pin for DC/DC output voltage.

4 FB1 I CH1 input pin for feedback voltage.

5 CS1 I CH1 soft-start time setting capacitor connection pin.

6 GND — Ground pin.

7 FREQ I

Frequency switching signal input pin.

FREQ : GND Short Switching frequency 310 kHz

FREQ : Open Switching frequency 620 kHz

FREQ : VB Short Switching frequency 1 MHz

8 CS2 I CH2 soft-start time setting capacitor connection pin.

9 FB2 I CH2 input pin for feedback voltage.

10 VOUT2 I CH2 input pin for DC/DC output voltage.

11 EN2 I CH2 enable pin.

12 BST2 — CH2 boost capacitor connection pin.

13 DRVH2 O CH2 output pin for external high-side FET gate drive.

14 LX2 — CH2 inductor and external high-side FET source connection pin.

15 DRVL2 — CH2 output pin for external low-side FET gate drive.

16 ILIM2 I CH2 over current detection level setting voltage input pin.

17 MODE I

DC/DC control mode switching signal input pin.

MODE : GND Short PFM/PWM

MODE : Open PFM/PWM, PAF

MODE : VB Short PWM fixed

18 VB O Internal circuit bias output pin.

19 VCC I Power input pin for control and output circuits.

20 ILIM1 I CH1 over current detection level setting voltage input pin.

21 PGND — Ground pin for output circuit.

22 DRVL1 O CH1 output pin for external low-side FET gate drive.

23 LX1 — CH1 inductor and external high-side FET source connection pin.

24 DRVH1 O CH1 output pin for external high-side FET gate drive.

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

 BLOCK DIAGRAM

5µA

1µA

2 µA

450 kΩ

VIN

(6 V to 28

OVP

UVP

UVP2

UVP1

OVP2

OVP1

REF1

× 0.7 V

REF1

× 1.15V

/EN 1

/UVLO(OTP)

/EN1

OTP

UVP

REF1

(0.7 V)

Generator

VCC

EN1

EN2

VCC

4 : 1

25 Ω

5.2 V

VREF

2.5 V

Slope & Offset

OVP latch

(delay:15 µs)

UVP latch

(delay:150 µs)

VOUT1

<CH1>

VOUT1

FB1

CS1

ILIM1

EN1

OUT2

VOUT2

FB2

CS2

ILIM2

EN2

<CH2>

Logic EN1

"H": Enable

REF1

REF2

UVLO

(VB)

UVLO

(VREF)

UVLO OTP

to CH2

MODE

Select

BST2

MODE

FREQ

PGND

DRVL1

DRV

Logic

LX1

PGND

×1.0

LX1

DRVH1

VOUT1

DRVH

DRVL

BST1

DRVH2

LX2

DRVL2

VOUT2

GND

FREQ

Select

"H": UVLO

release Thermal

Protection

EN2

(0.7 V)

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

 ABSOLUTE MAXIMUM RATINGS

Rating

Parameter Symbol Condition

Min Max

Unit

VCC pin input voltage VVCC VCC pin − 0.3 + 30 V

BST pin input voltage VBST BST1, BST2 pins − 0.3 + 36 V

LX pin input voltage VLX LX1, LX2 pins − 1 + 30 V

Voltage between

BST and LX VBST-LX — − 0.3 + 7 V

EN pin input voltage VEN EN1, EN2 pins − 0.3 + 30 V

VFB FB1, FB2 pins − 0.3 VB + 0.3 V

VVOUT VOUT1, VOUT2 pins − 0.3 + 7 V

VILIM ILIM1, ILIM2 pins − 0.3 VB + 0.3 V

VCS CS1, CS2 pins − 0.3 VB + 0.3 V

VFREQ FREQ pin − 0.3 VB + 0.3 V

Input voltage

VMODE MODE pin − 0.3 VB + 0.3 V

Output current IOUT DRVH1, DRVH2 pins,

DRVL1, DRVL2 pins — 60 mA

Power dissipation PD Ta ≤ + 25°C — + 1282 mW

Storage temperature TSTG — − 55 + 125 °C

WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,

temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

 RECOMMENDED OPERATING CONDITIONS

Value

Parameter Symbol Condition

Min Typ Max

Unit

VCC pin input voltage VVCC VCC pin 6 — 28 V

BST pin input voltage VBST BST1, BST2 pins — — 34 V

EN pin input voltage VEN EN1, EN2 pins 0 — 28 V

VFB FB1, FB2 pins 0 — VB V

VVOUT VOUT1, VOUT2 pins 0 — 5.5 V

VILIM ILIM1, ILIM2 pins 0 — 2 V

VFREQ FREQ pin 0 — VB V

Input voltage

VMODE MODE pin 0 — VB V

Peak output current IOUT

DRVH1, DRVH2 pins,

DRVL1, DRVL2 pins

Duty ≤ 5% (t = 1/fOSC¯Duty)

− 1200 — + 1200 mA

Operating ambient

temperature Ta — − 30 + 25 + 85 °C

WARNING: The recommended operating conditions are required in order to ensure the normal operation of the

semiconductor device. All of the device's electrical characteristics are warranted when the device

is operated within these ranges.

Always use semiconductor devices within their recommended operating condition ranges.

Operation outside these ranges may adversely affect reliability and could result in device failure.

No warranty is made with respect to uses, operating conditions, or combinations not represented

on the data sheet. Users considering application outside the listed conditions are advised to contact

their representatives beforehand.

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

 ELECTRICAL CHARACTERISTICS

(Ta = +25°C, VCC = 12 V, EN1, EN2 = 5 V)

Value

Parameter Symbol Pin

No. Condition

Min Typ Max

Unit

Output voltage VVB 18 VB = 0 A 5.04 5.20 5.36 V

Input stability LINE 18 VCC = 6 V to 28 V — 10 100 mV

Load stability LOAD 18 VB = 0 A to − 1 mA — 10 100 mV

Bias Voltage

Block

[VB Reg.] Short-circuit

output current IOS 18 VB = 0 V − 145 − 100 − 75 mA

VTLH 18 VB pin 4.0 4.3 4.6 V

Threshold voltage

VTHL 18 VB pin 3.7 4.0 4.3 V

Under

voltage

Lockout

Protection

Circuit Block

[UVLO]

Hysteresis width VH 18 VB pin — 0.3* — V

Charge current ICS 5,8 CS1, CS2 = 0 V − 1.5 −1.0 − 0.75 µA

Electrical discharge

resistance RD 3,10 EN1, EN2 = 0 V,

VOUT1, VOUT2 ≥ 0.15 V — 25* — Ω

Soft-Start/

Discharge

Block

[Soft Start,

Discharge] Discharge end

voltage VVOVTH 3,10 EN1, EN2 = 0 V,

VOUT1, VOUT2 pins — 0.2* — V

tON11 24

FREQ pin GND connection

VCC = 12 V, VOUT1 = 1.5 V 430 538 646 ns

ON time

(Preset value 1)

tON21 13

FREQ pin GND connection

VCC = 12 V, VOUT2 = 1.5V 320 400 480 ns

tON12 24

FREQ pin OPEN

VCC = 12 V, VOUT1 = 1.5 V 210 263 316 ns

ON time

(Preset value 2)

tON22 13

FREQ pin OPEN

VCC = 12 V, VOUT2 = 1.5 V 160 200 240 ns

tON13 24

FREQ pin VB connection

VCC = 12 V, VOUT1 = 1.5 V 130 163 196 ns

ON time

(Preset value 3)

tON23 13

FREQ pin VB connection

VCC = 12 V, VOUT2 = 1.5 V 100 125 150 ns

tONMIN11 24

FREQ pin GND connection

VCC = 12 V, VOUT1 = 0V — 136 191 ns

Minimum

ON time

(Preset value 1) tONMIN21 13

FREQ pin GND connection

VCC = 12 V, VOUT2 = 0V — 103 145 ns

tONMIN12 24

FREQ pin OPEN

VCC = 12 V, VOUT1 = 0V — 77 108 ns

Minimum

ON time

(Preset value 2) tONMIN22 13

FREQ pin OPEN

VCC = 12 V, VOUT2 = 0V — 58 82 ns

tONMIN13 24

FREQ pin VB connection

VCC = 12V, VOUT1 = 0V — 55 77 ns

Minimum

ON time

(Preset value 3) tONMIN23 13

FREQ pin VB connection

VCC = 12 V, VOUT2 = 0V — 43 61 ns

ON/OFF

Time

Generator

Block

[tON

Generator]

Minimum OFF time tOFFMIN 24, 13 — — 410 535 ns

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

Value

Parameter Symbol Pin

No. Condition

Min Typ Max

Unit

Threshold voltage VTH 4, 9

Ta = +25°C 0.695 0.700 0.705 V

FB pin input current IFB 4, 9 FB1, FB2 = 0.7 V − 0.1 0 +0.1 µA

Error

Comparison

Block

[Error Comp.] VOUT pin input

current IVO 3,10 VOUT1, VOUT2 = 1.5 V — 6.0 8.6 µA

Over current detection

offset voltage VOFFILIM

21 to 23

21 to 14

PGND − LX1, LX2

ILIM1, ILIM2 = 500 mV − 30 0 +30 mV

ILIM pin current IILIM 20,16 ILIM1, ILIM2 = 0 V − 6 − 5 − 4 µA

Over Current

Detection

Block

[ILIM Comp.] ILIM pin current

Temperature slope TILIM 20,16 Ta = +25°C — 4500* — ppm/

°C

Over-voltage

detecting voltage VOVP 4, 9 For REF1, REF2 voltage 110 115 120 %

Hysteresis width VHOVP 4, 9 — — 5* — %

Over-

voltage

Protection

Circuit Block

[OVP Comp.] Detection delay time tOVP — — 10 15 20

µs

Under-voltage

detecting voltage VUVP 4, 9 For REF1, REF2 voltage 65 70 75 %

Hysteresis width VHUVP 4, 9 — — 10* — %

Under-

voltage

Protection

Circuit Block

[UVP Comp.] Detection delay time tUVP — — 100 150 200 µs

TOTPH — — — 150* —

°C

Over-

temperature

Protection

Circuit Block

[OTP]

Protection

temperature TOTPL — — — 125* —

°C

ROH 24,13 DRVH1, DRVH2 =

− 100 mA — 4 6 Ω

High-side output

on-resistance

ROL 24,13 DRVH1, DRVH2 = 100 mA — 1 1.5 Ω

ROH 22,15 DRVL1, DRVL2 =

− 100 mA — 4 6 Ω

Low-side output

on-resistance

ROL 22,15 DRVL1, DRVL2 = 100 mA — 1 1.5 Ω

Output source

current ISOURCE

24,13

22,15

LX1, LX2 = 0 V,

BST1, BST2 = VB

DRVH1, DRVH2 = 2.5 V

Duty ≤ 5%

— − 0.5* — A

Output sink current ISINK 24,13

22,15

LX1, LX2 = 0 V,

BST1, BST2 = VB

DRVH1, DRVH2 = 2.5 V

Duty ≤ 5%

— 0.9* — A

LX1, LX2 = 0 V,

BST1, BST2 = VB

DRVL1, DRVL2-low to

DRVH1, DRVH2-on

15 25 35 ns

Output Block

[DRV]

Dead time tD 24 to 22

13 to 15 LX1, LX2 = 0 V,

BST1, BST2 = VB

DRVH1, DRVH2-low to

DRVL1, DRVL2-on

35 50 65 ns

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

Value

Parameter Symbol Pin

No. Condition

Min Typ Max

Unit

BST diode voltage VF 1,12 IF = 10 mA 0.75 0.85 0.95 V

Output Block

[DRV] Bias current IBST 1,12 LX1, LX2 = 0 V,

BST1, BST2 = 5.2 V 11 15 22

µA

Preset value 1

conditions VFREQ1 7 FREQ pin:

GND connection 0 — 0.2 V

Preset value 2

conditions VFREQ2 7 FREQ pin: OPEN 0.6 — 1.2 V

Preset value 3

conditions VFREQ3 7 FREQ pin: VB connection 2.4 — VB V

Switching

Frequency

Control Block

[FREQ]

FREQ pin

output voltage VFREQ 7 FREQ = OPEN 0.63 0.9 1.17 V

PFM/PWM mode

conditions

PAF function

negate

VPFM1 17 MODE pin:

GND connection 0 — 0.2 V

PFM/PWM mode

conditions

PAF function

assert

VPFM2 17 MODE pin : OPEN 0.6 — 1.2 V

PWM-fixed mode

conditions VPWM 17 MODE pin : VB connection 4.6 — VB V

PAF frequency fPAF —

Ta = − 30°C to +85°C 30 45 — kHz

PFM Control

Circuit Block

[MODE]

MODE pin voltage VMODE 17 MODE = OPEN 0.63 0.9 1.17 V

ON condition VON 2, 11 EN1, EN2 pins 2.64 — — V

OFF condition VOFF 2, 11 EN1, EN2 pins — — 0.66 V

Hysteresis width VH 2, 11 EN1, EN2 pins — 0.4* — V

Enable Block

[EN1 , EN2]

Input current IEN 2, 11 EN1, EN2 = 5V 11 15 22 µA

Standby current ICCS 19 EN1, EN2 = 0V — 0 10 µA

Power supply

current during idle

period

ICC1 19

LX1, LX2 = 0 V

BST1, BST2 :

VB connection

FB1, FB2 = 0.75 V

— 600 860 µA

Power Supply

Current

Power supply

current during

operation

ICC2 19

LX1, LX2 = 0V

BST1, BST2 :

VB connection

FB1, FB2 = 0.6 V

— 1200 1700 µA

*: This parameter is not be specified. This should be used as a reference to support designing the circuits.

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

 TYPICAL CHARACTERISTICS

Power dissipation vs. Operating ambient temperature

Power dissipation PD (mW)

500

1000

1500

2000

-50 -25 +0 +25 +50 +75 +100+12

1282

Operating ambient temperature Ta (°C)

VB bias voltage vs. Operating ambient temperature VB bias voltage vs. VB bias output current

VB bias voltage VVB (V)

5.00

5.04

5.08

5.12

5.16

5.20

5.24

5.28

5.32

5.36

5.40

-40 -20 0 +20 +40 +60 +80 +100

VCC=12V

=0A

VB bias voltage VVB (V)

5.0

5.1

5.2

5.3

5.4

-30 -25 -20 -15 -10 -5 0

VCC=6V

VCC=12V

VCC=28V

Operating ambient temperature Ta (°C) VB bias output current IVB (mA)

Error Comp. Threshold voltage vs.

Operating ambient temperature ILIM pin current vs. Operating ambient temperature

Error Comp. Threshold voltage VTH (V)

0.695

0.696

0.697

0.698

0.699

0.700

0.701

0.702

0.703

0.704

0.705

-40 -20 0 +20 +40 +60 +80+100

ILIM pin current IILIM (µA)

-6.0

-5.5

-5.0

-4.5

-4.0

-3.5

-40 -20 0 +20 +40 +60 +80 +100

Operating ambient temperature Ta (°C) Operating ambient temperature Ta (°C)

Ta = +25 °C

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

DRVH1 on time vs. Operating ambient temperature DRVH2 on time vs. Operating ambient temperature

DRVH1 on time tON1 (ns)

100

150

300

350

500

550

600

650

700

-40 -20 0 +20 +40 +60 +80 +100

VCC=12V

VOUT1=1.5V

FREQ=GND

FREQ=OPEN

FREQ=VB

DRVH2 on time tON2 (ns)

100

150

200

250

300

350

400

450

500

-40 -20 0 +20 +40 +60 +80 +100

VCC=12V

VOUT2=1.5V

FREQ=GND

FREQ=OPEN

FREQ=VB

Operating ambient temperature Ta (°C) Operating ambient temperature Ta (°C)

DRVH1 minimum on time vs. Input voltage DRVH2 minimum on time vs. Input voltage

DRVH1 minimum on time tONMIN1 (ns)

100

150

200

250

5 1015202530

FREQ=GND

FREQ=OPEN

FREQ=VB

DRVH2 minimum on time tONMIN1 (ns)

100

150

200

5 1015202530

FREQ=GND

FREQ=OPEN

FREQ=VB

Input voltage VIN (V) Input voltage VIN (V)

DRVH1 minimum on time vs.

Operating ambient temperature DRVH2 minimum on time vs.

Operating ambient temperature

DRVH1 minimum on time tONMIN1 (ns)

100

120

140

160

180

-40 -20 0 +20 +40 +60 +80 +100

VCC=12V

VOUT1= 0 V

FREQ=GND

FREQ=OPEN

FREQ=VB

DRVH2 minimum on time tONMIN2 (ns)

100

120

140

-40 -20 0 +20 +40 +60 +80 +100

VCC=12V

VOUT2=0 V

FREQ=GND

FREQ=OPEN

FREQ=VB

Operating ambient temperature Ta (°C) Operating ambient temperature Ta (°C)

Ta = + 25°C

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

Minimum off time vs. Input voltage Minimum off time vs.

Operating ambient temperature

Minimum off time tOFFMIN (ns)

200

250

300

350

400

450

500

550

600

5 1015202530

Minimum off time tOFFMIN (ns)

200

250

300

350

500

550

600

-40 -20 0 +20 +40 +60 +80 +100

VCC=12V

Input voltage VIN (V) Operating ambient temperature Ta (°C)

Dead time vs. Operating ambient temperature Bootstrap diode IF vs. VF

Dead time (ns)

-40 -20 0 +20 +40 +60 +80 +100

LX=0V

BST

=VB

IF current IF (mA)

0.001

0.01

0.1

100

0.2 0.4 0.6 0.8 1 1.2

Operating ambient temperature Ta (°C) VF voltage VF (V)

tD1 : Period from DRVL off to DRVH on

tD2 : Period from DRVH off to DRVL on

Ta = - 30°C

Ta =+25°C

Ta =+ 85°C

Ta = + 25°C

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

 FUNCTION

Bottom detection comparator system for low output voltage ripple

The bottom detection comparator system for low output voltage ripple determines the ON time (tON) using

the input voltage (VIN) and output voltage (VOUT) to hold the ON state to a specified period. During the OFF

period, the reference voltage (INTREF) is compared with the feedback voltage (FB) using the error

comparator (Error Comp.). When the feedback voltage (FB) is below the reference voltage (INTREF) ,

RS-FF is set and the ON period starts again. Switching is repeated as described above. Error Comp. is used

to compare the reference voltage (INTREF) with the feedback voltage (FB) to control the off-duty condition

in order to stabilize the output voltage.

This system adds the inductor current slope detected during the synchronous rectification period (tOFF) to

the reference voltage (INTREF) , and generates an output voltage slope during the OFF period, which is

essential for the bottom detection comparator system, in the IC. This enables the stable control operations

under the low output voltage ripple conditions.

y Circuit diagram

Bias

tON

generator

Slope

Detector

Drive

Logic

INTREF

VREF

VIN

VOUT

Bias

Reg.

Lo-side

Drive

FB -

RS-FF

<Error Comp.> RQ

Hi-side

Drive

RS out

VINVOUT

tON

DRVH

DRVL

y Waveforms

OFF

INTREF

DRVH

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

(1) Bias Voltage Block (VB Reg.)

The 5.2 V (Typ) bias voltage is generated from the VCC pin voltage for the control, output, and boost

circuits. When either or both of the EN1 pin (pin 2) and EN2 pin (pin 11) are set to the “H” level, the

system is restored from the standby state to supply the bias voltage from the VB pin (pin 18).

(2) ON/OFF Time Generator Block (tON Generator)

This block contains a capacitor for timing setting and a resistor for timing setting and generates ON time

(tON) which depends on input voltage and output voltage. The switching frequency can be switched by

setting the FREQ pin (pin 7) to any one of GND connection, OPEN, and VB connection. ON time for each

CH is obtained from the following formula.

VVOUT1

tON1 (ns) = VVIN ¯ 4300 (fOSC1 230 kHz)

VVOUT2

tON2 (ns) = VVIN ¯ 3200 (fOSC2 310 kHz)

VVOUT1

tON1 (ns) = VVIN ¯ 2100 (fOSC1 460 kHz)

VVOUT2

tON2 (ns) = VVIN ¯ 1600 (fOSC2 620 kHz)

VVOUT1

tON1 (ns) = VVIN ¯ 1300 (fOSC1 750 kHz)

VVOUT2

tON2 (ns) = VVIN ¯ 1000 (fOSC2 1000 kHz)

The switching frequency of CH2 is set to 1.33 times that of CH1 to prevent the beat by the frequency

difference of channel to channel.

(3) Output Block (DRV1, DRV2)

The output circuit is configured in CMOS type for both of the high-side and the low-side. It provides the

0.5 A (Typ) source current and 0.9 A (Typ) sink current, drive the external N-ch MOS FET. The output

circuit of the high-side FET supplies the power from the boost circuit including the built-in boost diode. The

output circuit of the low-side FET supplies the power from the VB pin. This circuit monitors the gate

voltages of the high-side and low-side FETs. Until either FET is turned off, this circuit controls the ON

timing of another FET, preventing the shoot-through current. The sink ON resistance of the output circuit is

low 1 Ω (Typ), improve the self turn on margin of low-side FET.

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

(4) Starting sequence

When the EN1 pin (pin 2) or EN2 pin (pin 11) is set to the “H” level, the bias voltage is supplied from the

VB pin. If the voltage of the VB pin exceeds the UVLO threshold voltage, the DC/DC converter starts

operations and carries out the soft start. The soft start is a function used to prevent a rush current when the

power is started.

Activating the soft start initiates charging of the capacitor connected to the CS1 pin (pin 5) and CS2 pin (pin

8) and inputs the lamp voltage to the error comparator (Error Comp.) of each channel. The DC/DC

converter generates the output voltage according to that lamp voltage. This results in the soft start operation

that does not depend on the output load. The over voltage protection (OVP) and under voltage protection

(UVP) functions are disabled while the soft start is active.

EN1

CS1

DRVH1

UVLO V

TLH

INTREF

INTREF 0.805

1.6 V

0.805 V

DRVL1

OUT1

EN2

CS2

DRVH2

DRVL2

OUT2

CH1 soft start completed

UVLO release

CH2 soft start completed

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

(5) DC/DC converter stop sequence (Discharge, standby)

When the EN1 pin (pin 2) or EN2 pin (pin 11) is set to the “L” level, the output capacitor is discharged

using the discharge FET (RON 25 Ω) in the IC. If the voltage of the VOUT1 pin (pin 3) and VOUT2 pin

(pin 10) is below 0.2 V (Typ) by discharging the output capacitor, the IC stops discharge operation. Further,

if both the EN1 and EN2 pins are set to the “L” level, the IC also stops the output of the VB pin and enters

the standby state after detecting UVLO. The current of the VCC pin (IVCC) is then 10 µA (Max).

EN1

UVLO V

THL

CS1

RVH1

DRVL1

OUT1

EN2

0.2 V

1.6 V

0.2 V

CS2

RVH2

DRVL2

OUT2

(6) Under Voltage Lockout Protection (UVLO)

The under voltage lockout protection (UVLO) protects ICs from malfunction and protects the system from

destruction/deterioration, according to the reasons mentioned below.

y Transitional state when the bias voltage (VB) or the reference voltage (VREF) starts.

y Momentary decrease

To prevent such a malfunction, this function detects a voltage drop of the VB pin (pin 18) using the

comparator (UVLO Comp.), and stops IC operations.

When the VB pin exceeds the threshold voltage of the under voltage lockout protection circuit, the system

is restored.

CH2 discharge FET ON

CH1 discharge FET ON

Standby

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

(7) Over Current Limitation (ILIM)

This function limits the output current when it has increased, and protects devices connected to the output.

This function detects the inductor current IL from the electromotive force of the low-side FET on-resistance

RON, and compares this voltage with the 1/5-time value of the voltage VILIM of the ILIM1 pin (pin 20) and

ILIM2 pin (pin 16) on a cyclically, using ILIM Comp. Until this voltage falls below the over current limit

value, the high-side FET is held in the off state. After the voltage has fallen below the limit value, the

high-side FET is placed into the on state. This limits the lower bound of the inductor current and also

restricts the over current. As a result, it becomes operation that the output voltage droops.

The over current limit value is set by connecting the resistor to the ILIM pin. The ILIM pin supplies the

constant current of 5 µA (Typ) . However, the current value has a temperature slope up to 4500 ppm/°C to

compensate the temperature dependence characteristics of the low-side FET on-resistance.

OUT

DRVH

DRVL

OUT1

)

Output voltage setting value

Keep the off state of the high-side FET

until the detection value is gained.

Over current limit operation

Normal operation

VILIM

ILIM detection value (RON × IL =

)

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

(8) Over Voltage Protection (OVP)

This function stops the output voltage when the output voltage has increased, and protects devices

connected to the output.

1. Using OVP Comp, this function makes a comparison between the voltage which is 1.15 times (Typ) of

the internal reference voltage INTREF1 and INTREF2 (0.7 V), and the feedback voltage for the FB1

pin (pin 4) and the FB2 pin (pin 9).

2. If the feedback voltage mentioned in 1 detects the higher state by 15µs (Typ) or more, the operations

below will be performed.

y Set the RS latch.

y Set the DRVH1 pin (pin 24) and the DRVH2 pin (pin 13) to the “L” level.

y Set the DRVL1 pin (pin 22) and the DRVL2 pin (pin 15) to the “H” level.

These operations fix the high-side FET to the off state and the low-side FET to the on state for both

channels of the DC/DC converter, and stops switching (latch stop).The over-voltage protection state can be

cancelled by setting both the EN1pin (pin 2) and EN2 pin (pin 11) to the “L” level or reducing the VCC

power once until the bias voltage (VB) falls below VTHL of UVLO.

VOUT1

FB1

0 V

INTREF

DRVH1

DRVL1

CS1

VOUT2

FB2

DRVH2

DRVL2

CS2

EN1, EN2

VB UVLO VTHL

15 µs

Output voltage

setting value

Output voltage

setting value

Standby

Less than 15 µs

Cancellation of over-voltage protection

state by EN = "L".

INTREF¯1.15

INTREF¯1.10

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

(9) Under Voltage Protection (UVP)

This function stops the output voltage when the output voltage has lowered, and protects devices connected

to the output.

1. Using UVP Comp, this function makes a comparison between the voltage which is 0.7 times (Typ) of

the internal reference voltage REF1, REF2 (0.7 V), and the feedback voltage for the FB1 pin (pin 4) and

the FB2 pin (pin 9).

2. If the feedback voltage mentioned in 1 detects the higher state by 150µs (Typ) or more, the operations

below will be performed.

y Set the RS latch.

y Set the DRVH1 pin (pin 24) and the DRVH2 pin (pin 13) to the “L” level.

y Set the DRVL1 pin (pin 22) and the DRVL2 pin (pin 15) to the “L” level.

These operations fix the high-side FET to the off state and the low-side FET to the off state for both

channels of the DC/DC converter, and stops switching (latch stop). The discharge operation is then carried

out to discharge the output capacitor (The discharge operation continues until the state of the under-voltage

protection is released).

The under-voltage protection state can be cancelled by setting both the EN1 pin (pin 2) and EN2 pin (pin 11)

to the “L” level or reducing the VCC power once until the bias voltage (VB) falls below VTHL of UVLO.

OUT1

FB1

DRVH1

DRVL1

CS1

OUT2

FB2

DRVH2

DRVL2

CS2

EN1, EN2

0 V

INTREF

UVLO V

THL

150 µs

0 V

Output voltage

setting value

Standby

Less than 15 µs

Cancellation of over-voltage protection state by EN = "L".

INTREF ¯ 0.8

INTREF ¯0.7

Output voltage

setting value

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

(10) Over Temperature Protection (OTP)

The over-temperature protection circuit block (OTP) provides a function that prevents the IC from a thermal

destruction. If the junction temperature reaches + 150°C, the DRVH1 pin (pin 24) and DRVH2 pin (pin 13)

are set to the “L” level, and the DRVL1 pin (pin 22 ) and DRVL2 pin (pin 15) are set to the “L” level. This

fixes the high-side and low-side FETs to the off-state, of both channels in the DC/DC converter, causing

switching to be stopped. The discharge operation is then carried out to discharge the output capacitor (The

discharge operation continues until the state of the over-temperature protection is released). If the junction

temperature drops to + 125°C, the soft start is reactivated. (Restored automatically.)

(11) Operation mode

In the PWM-fixed mode, the system acts by the switching frequency specified with the FREQ pin

regardless of the load.

In the automatic PFM/PWM selection mode, the switching frequency is reduced at low load, for enhancing

the conversion efficiency characteristics. This function detects 0 A of the inductor current from the

electromotive force of the low-side FET ON resistance when the low-side FET ON state, and places the

low-side FET into the off state. This idle period continued until the output voltage decreased, this results the

switching frequency being reduced automatically depending on the load current when the inductor current

is below the critical current. The system acts by the switching frequency specified with the FREQ pin, when

the inductor current exceeds the critical current.

For Automatic PFM/PWM selection mode with PAF function, the switching frequency at low load is held to

30 kHz (Min) or more.

The operation mode can be switched by setting the MODE pin (pin 17) to any one of GND connection,

OPEN, and VB connection.

y PWM-fixed mode

IOUTx

ILXx

LXx

0 A

y Automatic PFM/PWM selection mode

OUTx

LXx

0 A

Switching frequency reduced

Inductor current in the opposite

direction

X : Each channel number

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

y Enable function table

EN1 pin EN2 pin DC/DC converter (CH1) DC/DC converter (CH2)

L L OFF OFF

H L ON OFF

L H OFF ON

H H ON ON

y DC/DC Control mode function table

MODE pin DC/DC control

GND connection Automatic PFM/PWM selection mode

OPEN Automatic PFM/PWM selection mode with PAF function

VB connection PWM-fixed mode

y Switching frequency control function table

FREQ pin Switching frequency

GND connection fOSC1 230 kHz, fOSC2 310 kHz

OPEN fOSC1 460 kHz, fOSC2 620 kHz

VB connection fOSC1 750 kHz, fOSC2 1000 kHz

y Protection function table

The following table shows the state of the VB pin (pin 18), the DRVH1 pin (pin 24), the DRVH2 pin (pin

13), the DRVL1 pin (pin 22), the DRVL2 pin (pin 15) when each protection function operates.

Output of each pin

after detection

Protection

function Detection condition

VB DRVH1,

DRVH2

DRVL1,

DRVL2

DC/DC output

dropping operation

Under Voltage

Lockout Protection

(UVLO)

VB < 4.0 V — L L Natural electric

discharge

Over-current

limitation

(ILIM)

VPGND - VLX1, VLX2 >

VILIM1, VILIM2 5.2 V Switching Switching The voltage is dropped

by the constant current

Over Voltage

Protection

(OVP)

VFB1, VFB2 >

INTREF1, INTREF2¯1.15

(15 µs or higher)

5.2 V L H 0 V clamping

Under Voltage

Protection

(UVP)

VFB1, VFB2 >

INTREF1, INTREF2¯0.7

(150 µs or higher)

5.2 V L L Electrical discharge by

discharge function

Over Temperature

Protection

(OTP)

Tj > + 150 °C 5.2 V L L Electrical discharge by

discharge function

Enable

(EN)

EN1, EN2: H → L

(VOUT1, VOUT2 > 0.2 V) 5.2 V L L Electrical discharge by

discharge function

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

 I/O PIN EQUIVALENT CIRCUIT DIAGRAM

FB1

FB2

EN1

EN2

GND GND

MODE

GND

VCC

ILIM1

ILIM2

VOUT1

VOUT2

GND

PGND

FRWQ

GND

EN1, EN2 pins

FB1, FB2 pins

ESD protection

element

FREQ pin MODE pin

ILIM1, ILIM2 pins VOUT1, VOUT2 pins

ESD protection

element

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

BST1

BST2

LX1

LX2

VCC

GND

PGND

DRVL1

DRVL2

DRVH1

DRVH2

GND

VCC

CS1

CS2

GND

DRVL1, DRVL2 pins

CS pin

DRVH1, DRVH2, BST1, BST2, LX1, LX2 pins VB pin

VCC pin

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

 EXAMPLE APPLICATION CIRCUIT

VIN

PGND

VOUT1

PGND

VOUT2

1.0 V, 7 A

1.8 V, 7 A

MB39A214

12 V

VOUT1

FB1

EN1

CS1

ILIM1

MODE

FREQ

VOUT2

EN2

CS2

EN2

EN1

C13 C12

R4 R3-2 R3-1 R1-2 R1-1

GND

PGND

DRVL2

LX2

DRVH2

BST2

DRVL1

LX1

DRVH1

BST1

VCC

ILIM2

FB2

Q1 56

43L1

C1-1

C1-2

C2-1

C3-1

C3-2

C4-1

C4-3 C2-3

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

 PART LIST

Component Item Specification Vendor Package Part number Remarks

Q1 N-ch FET

VDS = 30 V, ID = 9 A, 5.4 A,

RON = 34 mΩ, 13 mΩ RENESAS SOP8 µPA2758 DualType

(2elements)

Q3 N-ch FET

VDS = 30 V, ID = 9 A, 5.4 A,

RON = 34 mΩ, 13 mΩ RENESAS SOP8 µPA2758 DualType

(2elements)

L1 Inductor 1 µH (18 A) NEC TOKIN - MPC1055L1R0

L2 Inductor 1.5 µH (12.4 A) NEC TOKIN - MPLC1040L1R5

C1-1 Ceramic

capacitor 10 µF (25 V) MURATA 3216 GRM31CB31E106K

C1-2 Ceramic

capacitor 10 µF (25 V) MURATA 3216 GRM31CB31E106K

C2-1 POSCAP 220 µF (2 V) SANYO D case 2TPLF220M6

C2-3 Ceramic

capacitor 1000 pF (50 V) TDK 1608 C1608JB1H102K

C3-1 Ceramic

capacitor 10 µF (25 V) MURATA 3216 GRM31CB31E106K

C3-2 Ceramic

capacitor 10 µF (25 V) MURATA 3216 GRM31CB31E106K

C4-1 POSCAP 150 µF (6.3 V) SANYO D case 6TPL150MU

C4-3 Ceramic

capacitor 1000 pF (50 V) TDK 1608 C1608JB1H102K

C5 Ceramic

capacitor 0.1 µF (50 V) TDK 1608 C1608JB1H104K

C6 Ceramic

capacitor 0.1 µF (50 V) TDK 1608 C1608JB1H104K

C7 Ceramic

capacitor 0.1 µF (50 V) TDK 1608 C1608JB1H104K

C8 Ceramic

capacitor 4.7 µF (16 V) TDK 1608 C1608JB1C475K

C12 Ceramic

capacitor 3300 pF (50 V) TDK 1608 C1608JB1H332K

C13 Ceramic

capacitor 3300 pF (50 V) TDK 1608 C1608JB1H332K

R1-1 Resistor 1.6 kΩ SSM 1608 RR0816P162D

R1-2 Resistor 27 kΩ SSM 1608 RR0816P273D

R2 Resistor 68 kΩ SSM 1608 RR0816P683D

R3-1 Resistor 0.047 kΩ SSM 1608 RR0816P470D

R3-2 Resistor 56 kΩ SSM 1608 RR0816P563D

R4 Resistor 36 kΩ SSM 1608 RR0816P363D

R5 Resistor 110 kΩ SSM 1608 RR0816P114D

R6 Resistor 120 kΩ SSM 1608 RR0816P124D

RENESAS : Renesas Electronics Corporation

SANYO : SANYO Electric Co., Ltd

NEC TOKIN : NEC TOKIN Corporation

TDK : TDK Corporation

MURATA : Murata Manufacturing Co., Ltd.

SSM : SUSUMU Co.,Ltd.

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

 APPLICATION NOTE

1. Setting Operating Conditions

Setting output voltages

The output voltage can be set by adjusting the setting output voltage resistor ratio. Setting output voltage is

calculated by the following formula.

R1 + R2 2.8¯10-7 ΔVOUTx

VOUTx = R2

¯ (0.6946 + 0.2667¯ΔIL¯ (1−

tOFF ) ¯RON_Sync) + 2

VIN − VOUT VOUT (VIN − VOUTx)

ΔVOUTx = ESR ¯ΔIL, ΔIL = L

VIN ¯ fOSC

, tOFF = VIN¯fOSC

VOUTx : Output setting voltage [V]

VIN : Power supply voltage [V]

ΔVOUTX : Output ripple voltage value [V]

tOFF : Off time [s]

RON_Sync : ON resistance of low-side FET [Ω]

ΔIL : Ripple current peak-to-peak value of inductor [A]

ESR : Series resistance element of output capacitor [Ω]

L : Inductor value [H]

fOSC : Switching frequency [Hz]

OUTx

VOUT

The total resistor value (R1+R2) of the setting output resistor should be selected up to 100 kΩ.

x: Each channel number

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

Minimum power supply voltage

The maximum on duty is limited by "the minimum off time (tOFFMIN) that an IC holds without fail as a fixed

value" and "the on time (tON) determined by the power voltage value and the output voltage setting value".

The ratio between the output voltage and the power voltage must be less than the maximum on duty.

The minimum power supply voltage that is required to sustain the output voltage can be calculated by the

following formula.

(VOUT + IOUT_MAX ¯ (RDC + RON_Main)) ¯ VOUT

VIN_MIN = VOUT − (VOUT + IOUT_MAX ¯ (RDC + RON_Sync)) ¯ tOFF_MIN ¯ fOSC ¯1.2

VIN_MIN : Power supply voltage [V]

VOUT : Output setting voltage [V]

IOUT_MAX : Maximum load current value [A]

RON_Main : ON resistance of high-side FET [Ω]

RON_Sync : ON resistance of low-side FET [Ω]

RDC : Series resistance of inductor [Ω]

fOSC : Switching frequency setting value [Hz]

tOFF_MIN : Minimum off time (Maximum value) [s]

(For the minimum off time, see “ON/OFF Time [Minimum OFF time ] ” in

“ELECTRICAL CHARACTERISTICS”.)

Use the smaller switching frequency setting in order to make the voltage output possible with the lower

power voltage.

Slope voltages

It is necessary to sustain the Slope voltage 15 mV or higher in order to obtain the stable switching cycle.

The Slope voltage can be calculated by the following formula.

(VIN − VOUT) ¯ VOUT ¯ RON_Sync

VSlope = L ¯ VIN ¯ fOSC

VSlope : Slope voltage [V]

VIN : Power supply voltage [V]

VOUT : Output setting voltage [V]

fOSC : Switching frequency [Hz]

RON_Sync : ON resistance of low-side FET [Ω]

L : Inductor value [H]

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

Setting soft-start time

Calculate the soft-start time by the following formula.

ts = 7 ¯ 105 ¯ CCS

ts : Soft-start time [s] (time until output reaches 100%)

CCS : CS pin capacitor value [F]

Calculate the delay time until the soft-start activation by the following formula.

td = 43 ¯ CVB

td : VB voltage delay time (at VIN = 12 V) [s]

CVB : VB pin capacitor value [F]

When activating the other in the state where a side channel has already been activated (UVLO release: VB

output already), the delay time is hardly generated.

EN1

EN2

OUT1

OUT2

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

Setting switching frequency

The switching frequency is set at the FREQ pin. As for the setting process, see the switching frequency

control function table.

Setting over current limitation

The over current limitation value can be set by adjusting the over current limitation setting resistor value

connected to the ILIM pin.

Calculate the resistor value by the following formula.

ΔIL

RLIM = 106 ¯ RON_Sync ¯ (ILIM − 2 )

RLIM : Over current limitation value setting resistor [Ω]

ILIM : Over current limitation value [A]

ΔIL : Ripple current peak-to-peak value of inductor [A]

RON_Sync : ON resistance of low-side FET [Ω]

ILIM

RLIM

OUT

LIM

If the rate of inductor saturation current is small, the inductor value decreases and the ripple current of

inductor increase when the over-current flows. At that time there is a possibility that the limited output

current increases or is not limited, because the bottom of inductor current is detected. It is necessary to use

the inductor that has enough large rate of inductor saturation current to prevent the overlap current.

Inductor current

Over current

limitation value

Time

ΔIL

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

The over current limit value is affected by ILIM pin source current and over current detection offset voltage

in the IC except for the on resistance of the low-side FET and the inductor value. The variation of dropped

over current limit value caused by IC characteristics is calculated by the following formula.

2 ¯10-7¯ RLIM + 0.03

ΔILIM = RON_Sync

ΔILIM : The variation of dropped over current limit value [A]

RLIM : Over current limitation value setting resistor [Ω]

RON_Sync : ON resistance of low-side FET [Ω]

LIM

’

The over current detection value needs to set a sufficient margin against the maximum load current.

Inductor current

Dropped over current limit value due to

IC's characteristics

Time

Over current limit value ΔILIM

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

Power dissipation and the thermal design

IC's loss increases, if IC is used under the high power supply voltage, high switching frequency, high load

and high temperature. The IC internal loss can be calculated by the following formula.

PIC = VCC ¯ (ICC + QG_Total1 ¯ fOSC1 + QG_Total2 ¯ fOSC2)

PIC : IC internal loss [W]

VCC : Power supply voltage (VIN) [V]

ICC : Power supply current [A] (2 mA Max)

QG_Total1 : Total quantity of charge for the high-side FET and the low-side FET of each CH1 [C]

QG_Total2 : Total quantity of charge for the high-side FET and the low-side FET of each CH2 [C]

fOSC1 : CH1 switching frequency [Hz]

fOSC2 : CH2 switching frequency [Hz]

Calculate junction temperature (Tj) by the following formula.

Tj = Ta + θja ¯ PIC

Tj : Junction temperature [°C] (+ 125°C Max)

Ta : Ambient temperature [°C]

θja : TSSOP-24P Package thermal resistance (+ 78°C /W)

PIC : IC internal loss [W]

Handling of the pins when using a single channel

Although this device is a 2-channel DC/DC converter control IC, it is also able to be used as a 1-channel

DC/DC converter by handling the pins of the unused channel as shown in the following diagram.

Note: x is the unused channel number.

FBx

VOUTx

CSx

ENx

LXx

ILIMx

DRVHx

BSTx

DRVLx

“Open”

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

2. Selecting parts

Selection of smoothing inductor

The inductor value selects the value that the ripple current peak-to-peak value of the inductor is 50% or less

of the maximum load current as a rough standard. Calculate the inductor value in this case by the following

formula.

VIN −VOUT V

OUT

L ≥ LOR¯ IOUT_MAX

¯ VIN ¯fOSC

L : Inductor value [H]

IOUT_MAX : Maximum load current [A]

LOR : Ripple current peak-to-peak value of inductor/Maximum load current ratio (= 0.5)

VIN : Power supply voltage [V]

VOUT : Output setting voltage [V]

fOSC : Switching frequency [Hz]

It is necessary to calculate the maximum current value that flows to the inductor to judge whether the

electric current that flows to the inductor is a rated value or less. Calculate the maximum current value of

the inductor by the following formula.

ΔIL

ILMAX ≥ IOUT_MAX + 2

ILMAX : Maximum current value of inductor [A]

IOUT_MAX : Maximum load current [A]

ΔIL : Ripple current peak-to-peak value of inductor [A]

L : Inductor value [H]

VIN : Power supply voltage [V]

VOUT : Output setting voltage [V]

fOSC : Switching frequency [Hz]

OUT_MAX

MAX

Inductor current

Time

ΔIL

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

Selection of Switching FET

If selecting the high-side FET so that the value of the high-side FET conduction loss and the high-side FET

switching loss is same, the loss is effectively decreased.

Confirm that the high-side FET loss is within the rating value.

PMainFET = PRON_Main + PSW_Main

PMainFET : High-side FET loss [W]

PRON_Main : High-side FET conduction loss [W]

PSW_Main : High-side FET switching loss [W]

High-side FET conduction loss

VOUT

PRON_Main = IOUT_MAX

2 ¯ VIN

¯ RON_Main

PRON_Main : High-side FET conduction loss [W]

IOUT_MAX : Maximum load current [A]

VIN : Power supply voltage [V]

VOUT : Output voltage [V]

RON_Main : ON resistance of high-side FET [Ω]

The high-side FET switching loss can be calculated roughly by the following formula.

PSW_Main 1.56 ¯ VIN ¯ fOSC ¯ IOUT_MAX ¯ QSW

PSW_Main : Switching loss [W]

VIN : Power supply voltage [V]

fOSC : Switching frequency [Hz]

IOUT_MAX : Maximum load current [A]

QSW : Amount of high-side FET gate switch electric charge [C]

MOSFET has a tendency where the gate drive loss increases because the lower drive voltage product has

the bigger amount of gate electric charge (QG). Normally, we recommend a 4 V drive product, however, the

idle period at light load (both the high-side FET and the low-side FET is off-period) gets longer and the gate

drive voltage of the high-side FET may decrease, in the automatic PFM/PWM selection mode. The voltage

drops most at no-load mode. At this time, confirm that the boost voltage (voltage between BST-LX pins) is

a big enough value for the gate threshold value voltage of the high-side FET.

If it is not enough, consider adding the boost diode, increasing the capacitor value of the boost capacitor or

using a 2.5 V (or 1.8 V) drive product to the high-side FET.

Select the ON resistance of low-side FET from the range below.

0.2 0.1 0.015

RON_Sync ≤ ΔIL , RON_Sync ≤ΔIL

, RON_Sync ≥ΔIL

(ILIM −

2 )

RON_Sync : ON resistance of low-side FET [Ω]

ΔIL : Ripple current peak-to-peak value of inductor [A]

ILIM : Over current detection value [A]

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

If the formula above has been already satisfied and then a low ON resistance FET as possible is used for the

low-side FET, the loss is effectively decreased. Especially, it works dramatically in the low on duty mode.

The loss of the low-side FET can be calculated by the following formula.

VOUT

PSyncFET = PRON_Sync = IOUT_MAX

2 ¯ (1 – VIN

) ¯ RON_Sync

PSyncFET : Low-side FET loss [W]

PRON_Sync : Low-side FET conduction loss [W]

IOUT_MAX : Maximum load current [A]

VIN : Power supply voltage [V]

VOUT : Output voltage [V]

RON_Sync : ON resistance of low-side FET [Ω]

Turn-on and turn-off voltage of the low-side FET is generally small and the switching loss is small enough

to ignore, so that is omitted here.

Especially, when turning on the high-side FET under the high power supply voltage condition, the

rush-current might be generated by according to self-turn-on of the low-side FET. The parasitic capacitor

value of the low-side FET needs to satisfy the following conditions.

Crss

VTH_Sync > Ciss

¯VIN

VTH_Sync : Threshold voltage of low-side FET [V]

Crss : Parasitic feedback capacitance of low-side FET [F]

Ciss : Parasitic input capacitance of low-side FET [F]

VIN : Power supply voltage [V]

Also approaches of adding a capacitor close between the gate source pins of the low-side FET or adding

resistor between the BST pin and the boost capacitor, and so on are effective as a countermeasure of the

self-turn-on(adding resistor between the BST pin and the boost capacitor is also effective to adjust turn-on

time of the high-side FET).

This device monitors the gate voltage of the switching FET and optimizes the dead time. If the dumping

resistor is inserted among DRVH, DRVL and the switching FET gate to adjust turn-on and turn-off time of

the switching FET, this function might malfunction. In this device, resistor should not be connected among

the DRVH pin, the DRVL pin of IC and the switching FET gate, and should be connected by low

impedance as possible.

The gate drive power of the switching FET is supplied from LDO (VB) of IC inside. Select switching FET

so that the total amount of the switching FET electric charge for 2 channels (QG_Total1, QG_Total2)

satisfies the following formula.

IVB_MAX > QG_Total1 ¯ fOSC1 + QG_Total2 ¯ fOSC2

IVB_MAX : VB load current upper limit value (see the following graph) [A]

QG_Total1 : Total quantity of charge for the high-side FET and the low-side FET of each CH1 [C]

QG_Total2 : Total quantity of charge for the high-side FET and the low-side FET of each CH2 [C]

fOSC1 : CH1Switching frequency [Hz]

fOSC2 : CH2 Switching frequency [Hz]

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

8 10121416182022242628

Moreover, select the total quantity of the high-side FET electric charge as a guide that does not exceed the

total quantity of the high-side FET electric charge upper limit value shown below.

5 1015202530

FREQ=GND:CH1

FREQ=GND:CH2

FREQ=OPEN:CH1

FREQ=OPEN:CH2

FREQ=VB:CH1

FREQ=VB:CH2

Whether the mean current value that flows to switching FET is a rated value or less of switching FET is

judged. Each rating value for the switching FET can be calculated roughly by the following formula.

ID_Main > IOUT_MAX ¯ D

ID_Sync > IOUT_MAX ¯ (1 – D)

ID_Main : high-side FET drain current [A]

ID_Sync : Low-side FET drain current [A]

IOUT_MAX : Maximum load current [A]

D : On-duty

VDSS > VIN

VDSS : Voltage between the high-side FET drain and source and the low-side FET drain and

source [V]

VIN : Power supply voltage [V]

VB load current upper limit value [A]

VIN [V]

Power supply voltage VIN [V]

The total quantity upper limit of electric

charge of the high-side FET QG_MAX [nC]

From the top line

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

Selection of fly-back diode

This device is improved by adding the fly-back diode when the conversion efficiency improvement or the

suppression of the low-side FET fever is desired, although those are unnecessary to execute normally. The

effect is achieved in the condition where the switching frequency is high or output voltage is lower. Select

schottky barrier diode (SBD) that the forward current is as small as possible. In this DC/DC control IC, the

period for the electric current flow into fly-back diode is limited to dead time period because the

synchronous rectification system is adopted. (as for the dead time, see “Output Block” in “ELECTRICAL

CHARACTERISTICS”). Each rating for the fly-back diode can be calculated by the following formula.

ID ≥ IOUT_MAX ¯fOSC ¯ (tD1 + tD2)

ID : Forward current rating of SBD [A]

IOUT_MAX : Maximum load current [A]

fOSC : Switching frequency [Hz]

tD1, tD2 : Dead time [s]

ΔIL

IFSM ≥ IOUT_MAX + 2

IFSM : Peak forward surge current ratings of SBD [A]

IOUT_MAX : Maximum load current [A]

ΔIL : Ripple current peak-to-peak value of inductor [A]

VR_Fly > VIN

VR_Fly : Reverse voltage of fly-back diode direct current [V]

VIN : Power supply voltage [V]

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

Selection of input capacitor

Select the input capacitor whose ESR is as small as possible. The ceramic capacitor is an ideal. Use the

tantalum capacitor and the polymer capacitor of the low ESR when a mass capacitor is needed as the

ceramic capacitor can not support.

The ripple voltage is generated in the power supply voltage by the switching operation of DC/DC. Calculate

the lower bound of input capacitor according to an allowable ripple voltage. Calculate the ripple voltage of

the power supply from the following formula.

IOUT_MAX V

OUT ΔIL

ΔVIN = CIN

VIN ¯ fOSC + ESR ¯ (IOUT_MAX + 2 )

ΔVIN : Power supply ripple voltage peak-to-peak value [V]

IOUT_MAX : Maximum load current value [A]

CIN : Input capacitor value [F]

VIN : Power supply voltage [V]

VOUT : Output setting voltage [V]

fOSC : Switching frequency [Hz]

ESR : Series resistance component of input capacitor [Ω]

ΔIL : Ripple current peak-to-peak value of inductor [A]

Capacitor has frequency characteristic, the temperature characteristic, and the bias voltage characteristic, etc.

The effective capacitor value might become extremely small depending on the use conditions. Note the

effective capacitor value in the use conditions.

Calculate ratings of the input capacitor by the following formula:

VCIN > VIN

VCIN : Withstand voltage of the input capacitor [V]

VIN : Power supply voltage [V]

√ VOUT¯ (VIN – VOUT)

Irms ≥ IOMAX ¯

VIN

Irms : Allowable ripple current of input capacitor (effective value) [A]

IOMAX : Maximum load current value [A]

VIN : Power supply voltage [V]

VOUT : Output setting voltage [V]

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

Selection of output capacitor

A certain level of ESR is required for stable operation of this IC. Use a tantalum capacitor or polymer

capacitor as the output capacitor. If using a ceramic capacitor with low ESR, a resistor should be connected

in series with it to increase ESR equivalently.

Calculate the output capacitor value by the following formula as a guide.

COUT ≥ 4 ¯fOSC ¯ ESR

COUT : Output capacitor value [F]

fOSC : Switching frequency [Hz]

ESR : Series resistance of output capacitor [Ω]

Moreover, the output capacitor values are also derived from the allowable amount of overshoot and

undershoot. The following formula is represented as the worst condition in which the shift time for a sudden

load change is 0s. The output capacitor value allow a smaller amount than the value calculated by the

following formula when a longer shift time.

ΔIOUT

2 ¯ L

COUT ≥ 2 ¯ VOUT ¯ ΔVOUT_OVER …Overshoot condition

ΔIOUT

2 ¯ L ¯ (VOUT + VIN ¯ fOSC ¯ tOFF_MIN)

COUT ≥ 2 ¯ VOUT ¯ ΔVOUT_UNDER ¯ (VIN – VOUT – VIN ¯ fOSC ¯ tOFF_MIN) … Undershoot condition

COUT : Output capacitor value [F]

ΔVOUT_OVER : Allowable amount of output voltage overshoot [V]

ΔVOUT_UNDER : Allowable amount of output voltage undershoot [V]

ΔIOUT : Current difference in sudden load change [A]

L : Inductor value [H]

VIN : Power supply voltage [V]

VOUT : Output setting voltage [V]

fOSC : Switching frequency [Hz]

tOFF_MIN : Minimum off time

When changing to no load suddenly, the output voltage is overshoot, however, the current sink is not

executed in the mode other than PWM fix. As a result, the decrement of the output voltage might take a

long time. This sometimes results in the stop mode because of the over voltage detection. In the mode other

than PWM fix, select the capacitor value so that the overshoot value is set to the over voltage detection

voltage value or less (115% of the output setting voltage or less).

The capacitor has frequency, operating temperature, and bias voltage characteristics, etc. Therefore, it must

be noted that its effective capacitor value may be significantly smaller, depending on the use conditions.

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

Calculate each rating of the output capacitor by the following formula:

VCOUT > VOUT

VCOUT : Withstand voltage of the output capacitor [V]

VOUT : Output voltage [V]

ΔIL

IRMS ≥

IRMS : Allowable ripple current of output capacitor (effective value) [A]

ΔIL : Ripple current peak-to-peak value of inductor [A]

When connecting resistance in series configuration while a ceramic capacitor is in use, the resistor rating is

calculated by the following formula.

ESR¯ΔIL

PESR > 12

PESR : Power dissipation of resistor [W]

ESR : Resistor value [Ω]

ΔIL : Ripple current peak-to-peak value of inductor [A]

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

Selection of bootstrap capacitor

To drive the gate of high-side FET, the bootstrap capacitor must have enough stored charge. 0.1 µF is

assumed to be standard, however, it is necessary to adjust it when the high-side FET QG is big. Consider the

capacitor value calculated by the following formula as the lowest value for the bootstrap capacitor and

select a thing any more.

CBST ≥ 10¯QG

CBST : Bootstrap capacitor value [F]

QG : Total quantity of charge for the high-side FET gate [C]

Calculate ratings of the bootstrap capacitor by the following formula:

VCBST > VB

VCBST : Withstand voltage of the bootstrap capacitor [V]

VB : VB voltage [V]

VB pin capacitor

4.7 µF is assumed to be a standard, and when QG of switching FET used is large, it is necessary to adjust it.

To suppress the ripple voltage by the switching FET gate drive, consider the capacitor value calculated by

the following formula as the lowest value for VB capacitor and select a thing any more.

CVB ≥ 50¯QG

CVB : VB pin capacitor value [F]

QG : Total amount of gate charge of high-side FET and low-side switching FET for 2CH [C]

Calculate ratings of the VB pin capacitor by the following formula:

VCVB > VB

VCVB : Withstand voltage of the VB pin capacitor [V]

VB : VB voltage [V]

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

Layout

Consider the points listed below and do the layout design.

y Provide the ground plane as much as possible on the IC mounted face. Connect bypass capacitor

connected with the VCC and VB pins, and GND pin of the switching system parts with switching system

GND (PGND). Connect other GND connection pins with control system GND (AGND), and separate

each GND, and try not to pass the heavy current path through the control system GND (AGND) as much

as possible. In that case, connect control system GND (AGND) and switching system GND (PGND) at

the single point of GND (PGND) directly below IC. Switching system parts are Input capacitor (CIN),

Switching FET, fly-back diode (SBD), inductor (L) and Output capacitor (COUT).

y Connect the switching system parts as much as possible on the surface. Avoid the connection through the

through-hole as much as possible.

y As for GND pins of the switching system parts, provide the through hole at the proximal place, and

connect it with GND of internal layer.

y Pay the most attention to the loop composed of input capacitor (CIN), switching FET, and fly-back diode

(SBD). Consider parts are disposed mutually to be near for making the current loop as small as possible.

y Place the bootstrap capacitor (CBST1, CBST2) proximal to BSTx and LXx pins of IC as much as possible.

y Connect the line to the LX pin proximal to the drain pin of low-side FET. Also large electric current

flows momentary in this net. Wire the line of width of about 0.8 mm as standard, and as short as possible.

y Large electric current flows momentary in the net of DRVHx and DRVLx pins connected with the gate of

switching FET. Wire the linewidth of about 0.8 mm to be a standard, as short as possible. Take special

care about the line of the DRVLx pin, and wire the line as short as possible.

y By-pass capacitor (CVCC, CVB) connected with VCC, and VB should be placed close to the pin as much as

possible. Also connect the GND pin of the bypass capacitor with GND of internal layer in the proximal

through-hole.

y Pull the feedback line to be connected to the VOUTx pin of the IC separately from near the output

capacitor pin, whenever possible. Consider the line connected with VOUTx and FBx pins to keep away

from a switching system parts as much as possible because it is sensitive to the noise.

Also, place the output voltage setting resistor connected to this line near IC, and try to shorten the line to

the FBx pin. In addition, for the internal layer right under the component mounting place, provide the

control system GND (AGND) of few ripple and few spike noises, or provide the ground plane of the

power supply as much as possible.

Consider that the discharge current momentary flows into the VOUTx pin (about 200 mA at Vout = 5 V)

when the DC/DC operation stops, and then sustain the width for the feedback line.

There is leaked magnetic flux around the inductor or backside of place equipped with inductor. Line and

parts sensitive to noise should be considered to be placed away from the inductor (or backside of place

equipped with inductor).

1pin

AGND

PGND

CBST2

CVCC

CVB

CBST1

SBD(option)

PGND

VIN

CIN

SBD (option)

COUT COUT

VOUT1 VOUT2

Layout example of IC peripheral Layout example of switching system parts

Through-hole

Connect AGND and PGND right under IC

Surface Internal

layer

Output voltage setting

resistor layout

Low-side FET

To the LX1 pin

Low-side FET

To the LX2 pin

Output voltage

VOUT2 feedback

Output voltage

VOUT1 feedback

High-side FET High-side FET

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

 REFERENCE DATA

Conversion Efficiency vs.Load Current Conversion Efficiency vs.Load Current

Conversion Efficiency η (%)

100

0.001 0.01 0.1 1 10

PFM/PWM

PAF PWM

= 12 V

OUT1

= 1.0 V

FREQ = Open

Ta = +25°C

Conversion Efficiencyη (%)

100

0.001 0.01 0.1 1 10

PFM/PWM

PAF

= 12 V

OUT2

= 1.8 V

FREQ = Open

Ta = +25°C

PWM

Load Current IOUT1 (A) Load Current IOUT2 (A)

Switching Frequency vs. Load Current Switching Frequency vs. Load Current

Switching Frequency fosc1 (kHz)

1000

100

0.001 0.01 0.1 1 1

PFM/PWM

PAF

= 12 V

OUT1

= 1.0 V

FREQ = Open

Ta = + 2 5 °C

PWM

Switching Frequency fosc2 (kHz)

1000

100

0.001 0.01 0.1 1 1

PFM/PWM

PAF

= 12 V

OUT2

= 1.8 V

FREQ = Open

Ta = +25°C

PWM

Load Current IOUT1(A) Load Current IOUT2 (A)

Output Voltage vs. Load Current Output Voltage vs. Load Current

Output Voltage VOUT1 (V)

1.05

1.04

1.03

1.02

1.01

1.00

0.99

0.98

0.97

0.96

0.95

0.001 0.01 0.1 1 10

PFM/PWM

PAF

= 12 V

OUT1

= 1.0 V

FREQ = Open

Ta = +25°C

PWM

Output Voltage VOUT2 (V)

1.90

1.88

1.86

1.84

1.82

1.80

1.78

1.76

1.74

1.72

1.70

0.001 0.01 0.1 1 1

PFM/PWM

PAF

VIN = 12 V

VOUT2 = 1.8 V

FREQ = Open

Ta = + 2 5 °C

PWM

Load Current IOUT1 (A) Load Current IOUT2 (A)

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

Ripple Waveform

=12 V, V

OUT1

=1.0 V, I

OUT1

=0 A, MODE=GND,

FREQ=Open, Ta=+25°C

OUT1

20 mV/div

100 ms/div

=12 V, V

OUT2

=1.8 V, I

OUT2

=0 A, MODE=GND,

FREQ=Open, Ta=+25°C

OUT2

20 mV/div

20 ms/div

=12 V, V

OUT1

=1.0 V, I

OUT1

=7 A, MODE=GND,

FREQ=Open, Ta=+25°C

VOUT1 20 mV/div

2 µs/div

=12 V, V

OUT2

=1.8 V, I

OUT2

=7 A, MODE=GND,

FREQ=Open, Ta=+25°C

OUT2

20 mV/div

2 µs/div

Load Sudden Change Waveform

VIN=12 V, VOUT1=1.0 V, IOUT1=0 A 4 A, MODE=GND,

FREQ=Open, Ta=+25°C

OUT1

50 mV/div

OUT1

2 A/div

10 µs/div

4 A

0 A

=12 V, V

OUT2

=1.8 V, I

OUT2

=0 A 4 A, MODE=GND,

FREQ=Open, Ta=+25°C

OUT2

50 mV/div

OUT2

2 A/div

10 µs/div

4 A

0 A

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

EN Startup and Shutdown Waveform

=12 V, V

OUT1

=1.0 V, I

OUT1

=7 A (0.14 Ω), MODE=GND,

FREQ=Open, Ta=+25°C

EN1 10 V/div

OUT1

500 mV/div

LX1 10 V/div

500 µs/div

=12V, V

OUT2

=1.8 V, I

OUT2

=7 A (0.26 Ω), MODE=GND,

FREQ=Open, Ta=+25°C

EN1 10V/div

VOUT1 500 mV/div

LX1 10V/div

500 µs/div

Output Over Current Waveform

=12 V, V

OUT1

=1.0 V,MODE=VB,FREQ=Open, Ta=+25°C

OUT1

5 A/div

OUT1

500 mV/div

LX1 10 V/div

100 µs/div

Normal operation Over current

limitation

Under voltage protection

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

 USAGE PRECAUTION

1. Do not configure the IC over the maximum ratings.

If the IC is used over the maximum ratings, the LSI may be permanently damaged.

It is preferable for the device to normally operate within the recommended usage conditions. Usage outside

of these conditions can have an adverse effect on the reliability of the LSI.

2. Use the device within the recommended operating conditions.

The recommended values guarantee the normal LSI operation under the recommended operating conditions.

The electrical ratings are guaranteed when the device is used within the recommended operating conditions

and under the conditions stated for each item.

3. Printed circuit board ground lines should be set up with consideration for common impedance.

4. Take appropriate measures against static electricity.

y Containers for semiconductor materials should have anti-static protection or be made of conductive

material.

y After mounting, printed circuit boards should be stored and shipped in conductive bags or containers.

y Work platforms, tools, and instruments should be properly grounded.

y Working personnel should be grounded with resistance of 250 kΩ to 1 MΩ in serial body and ground.

5. Do not apply negative voltages.

The use of negative voltages below ─0.3 V may make the parasitic transistor activated to the LSI, and can

cause malfunctions.

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

 ORDERING INFORMATION

Part number Package Remarks

MB39A214PFT 24-pin plastic TSSOP

(FPT-24P-M09)

 EV BOARD ORDERING INFORMATION

EV board number EV board version No. Remarks

MB39A214-EVB-01 MB39A214-EVB-01 Rev 1.0 TSSOP-24

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

 RoHS COMPLIANCE INFORMATION OF LEAD (Pb) FREE VERSION

The LSI products of FUJITSU SEMICONDUCTOR with “E1” are compliant with RoHS Directive, and has

observed the standard of lead, cadmium, mercury, Hexavalent chromium, polybrominated biphenyls (PBB),

and polybrominated diphenyl ethers (PBDE). A product whose part number has trailing characters “E1” is

RoHS compliant.

 MARKING FORMAT (Lead Free version)

XXXX

39A214

XXX

INDEX

Lead-free version

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

 LABELING SAMPLE (Lead free version)

2006/03/01

ASSEMBLED IN JAPAN

QC PASS

(3N) 1MB123456P-789-GE1

1000

(3N)2 1561190005 107210

1,000

PCS

0605 - Z01A

1000

1/1

1561190005

MB123456P - 789 - GE1

Lead-free mark

JEITA logo JEDEC logo

The part number of a lead-free product has

the trailing characters "E1".

"ASSEMBLED IN CHINA" is printed on the label

of a product assembled in China.

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

 MB39A214PFT RECOMMENDED CONDITIONS OF MOISTURE SENSITIVITY

LEVEL

[FUJITSU SEMICONDUCTOR Recommended Mounting Conditions]

Item Condition

Mounting Method IR (infrared reflow), warm air reflow

Mounting times 2 times

Before opening Please use it within two years after

manufacture.

From opening to the 2nd reflow Less than 8 days

Storage period

When the storage period after

opening was exceeded

Please process within 8 days

after baking (125°C ±3°C, 24H+ 2H/─0H) .

Baking can be performed up to two times.

Storage conditions 5°C to 30°C, 70% RH or less (the lowest possible humidity)

[Mounting Conditions]

(1) IR (infrared reflow)

260°C

(e)

(d')

(d)

245°C

170 °C

190 °C

RT (b)

(a)

(c)

Main heating

"M" rank : 250°C Max

(a) Temperature Increase gradient : Average 1°C/s to 4°C /s

(b) Preliminary heating : Temperature 170°C to 190°C, 60 s to 180 s

(d) Peak temperature : Temperature 250°C Max; 245°C or more, 10 s or less

(d') Main Heating : Temperature 230°C or more, 40 s or less

Temperature 225°C or more, 60 s or less

Temperature 220°C or more, 80 s or less

(e) Cooling : Natural cooling or forced cooling

Note: Temperature : the top of the package bod

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

(2) Manual soldering (partial heating method)

Item Condition

Before opening Within two years after manufacture

Storage period

Between opening and mounting

Within two years after manufacture

(No need to control moisture during the storage

period because of the partial heating method.)

Storage conditions 5°C to 30°C, 70% RH or less (the lowest possible humidity)

Mounting conditions Temperature at the tip of a soldering iron: 400°C Max

Time: Five seconds or below per pin*

*: Make sure that the tip of a soldering iron does not come in contact with the package body.

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

 PACKAGE DIMENSIONS

24-pin plastic TSSOP Lead pitch 0.50 mm

Package width ×

package length 4.40 mm × 6.50 mm

Lead shape Gullwing

Sealing method Pl asti c mol d

Mounting height 1.20 mm MAX

Weight 0.08 g

24-pin plastic TSSOP

(FPT-24P-M09)

2007-2010 FUJITS U SEMICONDUCTOR LIMITED F24032S-c-2-5

6.50± 0.10 (.256±. 004)

4.40± 0.10 6.40± 0.20

(.252±. 008)

(.173±. 004)

0.10± 0.05

(Mounting height)

0.10(.004)

0.50(.020)

112

24 13

"A"

(Stand off)

0.145± 0.045

(.0057±. 0018)

0.13(.005)

Details of "A" part

0~8°

(.024±. 006)

0.60± 0.15

INDEX

(.004±. 002)

BTM E-MARK

1.10

+0.10

+.004

–0.15

–.006

.043

0.20

+0.07

+.003

–0.02

–.001

.008

Dimensions in mm (inches).

Note: The values in parenthesesare reference values.

Note 1) Pins width and pins thickness include plating thickness.

Note 2) Pins width do not include tie bar cutting remainder.

Note 3) #: These dimensions do not include resin protrusion.

Please check the latest package dimension at the following URL.

http://edevice.fujitsu.com/package/en-search/

 
 
 
 
52 
 
MB39A214 
Limitation : development tool vendor use only 
FUJITSU SEMICONDUCTOR CONFIDENTIAL 
DS04-27280-2E
 CONTENTS 
 page 
 DESCRIPTION.................................................................................................................................1 
 FEATURES ....................................................................................................................................... 1 
 APPLICATIONS...............................................................................................................................1 
 PIN ASSIGNMENT.......................................................................................................................... 2 
 PIN DESCRIPTIONS .......................................................................................................................3 
 BLOCK DIAGRAM ......................................................................................................................... 4 
 ABSOLUTE MAXIMUM RATINGS ..............................................................................................5 
 RECOMMENDED OPERATING CONDITIONS........................................................................... 6 
 ELECTRICAL CHARACTERISTICS.............................................................................................7 
 TYPICAL CHARACTERISTICS...................................................................................................10 
 FUNCTION.....................................................................................................................................13 
 I/O PIN EQUIVALENT CIRCUIT DIAGRAM.............................................................................22 
 EXAMPLE APPLICATION CIRCUIT ..........................................................................................24 
 PART LIST......................................................................................................................................25 
 APPLICATION NOTE ...................................................................................................................26 
 REFERENCE DATA.......................................................................................................................42 
 USAGE PRECAUTION ................................................................................................................. 45 
 ORDERING INFORMATION........................................................................................................46 
 EV BOARD ORDERING INFORMATION ..................................................................................46 
 RoHS COMPLIANCE INFORMATION OF LEAD (Pb) FREE VERSION ................................47 
 MARKING FORMAT (Lead Free version)....................................................................................47 
 LABELING SAMPLE (Lead free version) ....................................................................................48 
 MB39A214PFT RECOMMENDED CONDITIONS OF MOISTURE SENSITIVITY LEVEL ..49 
 PACKAGE DIMENSIONS.............................................................................................................51 
 CONTENTS ....................................................................................................................................52 
 
 

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

MB39A214

Limitation : development tool vendor use only

FUJITSU SEMICONDUCTOR CONFIDENTIAL

DS04-27280-2E

FUJITSU SEMICONDUCTOR LIMITED

Nomura Fudosan Shin-yokohama Bldg. 10-23, Shin-yokohama 2-Chome,

Kohoku-ku Yokohama Kanagawa 222-0033, Japan

Tel: +81-45-415-5858

http://jp.fujitsu.com/fsl/en/

For further information please contact:

North and South America

FUJITSU SEMICONDUCTOR AMERICA, INC.

1250 E. Arques Avenue, M/S 333

Sunnyvale, CA 94085-5401, U.S.A.

Tel: +1-408-737-5600 Fax: +1-408-737-5999

http://us.fujitsu.com/micro/

Europe

FUJITSU SEMICONDUCTOR EUROPE GmbH

Pittlerstrasse 47, 63225 Langen, Germany

Tel: +49-6103-690-0 Fax: +49-6103-690-122

http://emea.fujitsu.com/semiconductor/

Korea

FUJITSU SEMICONDUCTOR KOREA LTD.

206 Kosmo Tower Building, 1002 Daechi-Dong,

Gangnam-Gu, Seoul 135-280, Republic of Korea

Tel: +82-2-3484-7100 Fax: +82-2-3484-7111

http://kr.fujitsu.com/fmk/

Asia Pacific

FUJITSU SEMICONDUCTOR ASIA PTE. LTD.

151 Lorong Chuan,

#05-08 New Tech Park 556741 Singapore

Tel : +65-6281-0770 Fax : +65-6281-0220

http://www.fujitsu.com/sg/services/micro/semiconductor/

FUJITSU SEMICONDUCTOR SHANGHAI CO., LTD.

Rm. 3102, Bund Center, No.222 Yan An Road (E),

Shanghai 200002, China

Tel : +86-21-6146-3688 Fax : +86-21-6335-1605

http://cn.fujitsu.com/fss/

FUJITSU SEMICONDUCTOR PACIFIC ASIA LTD.

10/F., World Commerce Centre, 11 Canton Road,

Tsimshatsui, Kowloon, Hong Kong

Tel : +852-2377-0226 Fax : +852-2376-3269

http://cn.fujitsu.com/fsp/

Specifications are subject to change without notice. For further information please contact each office.

The contents of this document are subject to change without notice.

Customers are advised to consult with sales representatives before ordering.

The information, such as descriptions of function and application circuit examples, in this document are presented solely

for the purpose of reference to show examples of operations and uses of FUJITSU SEMICONDUCTOR device; FUJITSU

SEMICONDUCTOR does not warrant proper operation of the device with respect to use based on such information. When

you develop equipment incorporating the device based on such information, you must assume any responsibility arising

out of such use of the information.

FUJITSU SEMICONDUCTOR assumes no liability for any damages whatsoever arising out of the use of the information.

Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as

license of the use or exercise of any intellectual property right, such as patent right or copyright, or any other right of

FUJITSU SEMICONDUCTOR or any third party or does FUJITSU SEMICONDUCTOR warrant non-infringement of

any third-party's intellectual property right or other right by using such information. FUJITSU SEMICONDUCTOR

assumes no liability for any infringement of the intellectual property rights or other rights of third parties which would

result from the use of information contained herein.

The products described in this document are designed, developed and manufactured as contemplated for general use,

including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not

designed, developed and manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless

extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury,

severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic

control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for use

requiring extremely high reliability (i.e., submersible repeater and artificial satellite).

Please note that FUJITSU SEMICONDUCTOR will not be liable against you and/or any third party for any claims or

damages arising in connection with above-mentioned uses of the products.

Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such

failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and

prevention of over-current levels and other abnormal operating conditions.

Exportation/release of any products described in this document may require necessary procedures in accordance with the

regulations of the Foreign Exchange and Foreign Trade Control Law of Japan and/or US export control laws.

The company names and brand names herein are the trademarks or registered trademarks of their respective owners.

Edited: Sales Promotion Department