IRF240SM
Prelim. 7/94
LAB
SEME
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
VGS Gate – Source Voltage
IDContinuous Drain Current (VGS = 0 , Tcase = 25°C)
IDContinuous Drain Current (VGS = 0 , Tcase = 100°C)
IDM Pulsed Drain Current 1
PDPower Dissipation @ Tcase = 25°C
Linear Derating Factor
EAS Single Pulse Avalanche Energy 2
dv/dt Peak Diode Recovery 3
TJ, Tstg Operating and Storage Temperature Range
TLPackage Mounting Surface Temperature (for 5 sec)
R
q
JC Thermal Resistance Junction to Case
R
q
J–PCB Thermal Resistance Junction to PCB (Typical)
±20V
13.9A
8.8A
56A
75W
0.6W/°C
450mJ
5.0V/ns
–55 to 150°C
300°C
1.67°C/W
4°C/W
MECHANICAL DATA
Dimensions in mm (inches)
13
2
0.25
3.0
11.5
2.0
3.5 3.5
4.6
1.5
15.8
9.0
8.5
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
TO–220SM – Surface Mount Package
Notes
1) Pulse Test: Pulse Width
£
300ms,
d£
2%
2) @ VDD = 50V , L
³
1.5mH , RG= 25
W
, Peak IL= 22A , Starting TJ= 25°C
3) @ ISD
£
13.9A , di/dt
£
150A/
m
s , VDD
£
BVDSS , TJ
£
150°C , SUGGESTED RG= 9.1
W
N–CHANNEL
POWER MOSFET
FEATURES
• HERMETICALLY SEALED SURFACE
MOUNT PACKAGE
• SMALL FOOTPRINT – EFFICIENT USE OF
PCB SPACE.
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
• HIGH PACKING DENSITIES
Pad 1 – Gate Pad 2 – Drain Pad 3 – Source Note: IRFNxxx also available with
pins 1 and 3 reversed.
VDSS 200V
ID(cont) 13.9A
RDS(on) 0.180
WW
WW
IRF240SM
Prelim. 7/94
LAB
SEME
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Parameter Test Conditions Min. Typ. Max. Unit
VGS = 0 ID= 1mA
Reference to 25°C
ID= 1mA
VGS = 10V ID= 8.8A
VGS = 10V ID= 13.9A
VDS = VGS ID= 250
m
A
VDS
³
15V IDS = 8.8A
VGS = 0 VDS = 0.8BVDSS
TJ= 125°C
VGS = 20V
VGS = –20V
VGS = 0
VDS = 25V
f = 1MHz
VGS = 10V ID= 13.9A
VDS = 0.5BVDSS
ID= 13.9A
VDS = 0.5BVDSS
VDD = 100V
ID= 13.9A
RG= 9.1
W
IS= 13.9A TJ= 25°C
VGS = 0
IF= 13.9A TJ= 25°C
di/ dt
£
100A/
m
sV
DD
£
50V
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance 1
Gate Threshold Voltage
Forward Transconductance 1
Zero Gate Voltage Drain Current
Forward Gate
– Source Leakage
Reverse Gate
– Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
1
Gate – Source Charge
1
Gate – Drain (“Miller”) Charge
1
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current
Pulse Source Current 2
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn–On Time
200
0.29
0.180
0.250
24
6.1 25
250
100
–100
1300
400
130
32 60
2.2 10.6
14.2 37.6
20
152
58
67
13.9
56
1.5
500
5.3
Negligible
0.8
2.8
V
V/°C
W
V
S(
W
m
A
nA
pF
nC
nC
ns
A
V
ns
m
C
nH
BVDSS
D
BVDSS
D
TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
IGSS
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
IS
ISM
VSD
trr
Qrr
ton
LD
LS
STATIC ELECTRICAL RATINGS
Notes
1) Pulse Test: Pulse Width
£
300ms,
d£
2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
Internal Drain Inductance (from centre of drain pad to die)
Internal Source Inductance (from centre of source pad to end of source bond wire)
PACKAGE CHARACTERISTICS
(
W
)
