NPN-Silizium-Fototransistor Silicon NPN Phototransistor BP 103 Wesentliche Merkmale Features * Speziell geeignet fur Anwendungen im Bereich von 420 nm bis 1130 nm * Hohe Linearitat * TO-18, Bodenplatte, klares Epoxy-Gieharz, mit Basisanschlu * Especially suitable for applications from 420 nm to 1130 nm * High linearity * TO-18, base plate, transparent epoxy resin lens, with base connection Anwendungen Applications * Computer-Blitzlichtgerate * Lichtschranken fur Gleich- und Wechsellichtbetrieb * Industrieelektronik * Messen/Steuern/Regeln" * * * * Typ Type Bestellnummer Ordering Code BP 103 Q62702-P75 BP 103-3/4 Q62702-P3577 2001-02-21 1 Computer-controlled flashes Photointerrupters Industrial electronics For control and drive circuits BP 103 Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg - 40 ... + 80 C Lottemperatur bei Tauchlotung Lotstelle 2 mm vom Gehause, Lotzeit t 5 s Dip soldering temperature, 2 mm distance from case bottom t 5 s TS 260 C Lottemperatur bei Kolbenlotung Lotstelle 2 mm vom Gehause, Lotzeit t 3 s Iron soldering temperature, 2 mm distance from case bottom t 3 s TS 300 C Kollektor-Emitterspannung Collector-emitter voltage VCE 50 V Kollektorstrom Collector current IC 100 mA Kollektorspitzenstrom, < 10 s Collector surge current ICS 200 mA Emitter-Basisspannung Emitter-base voltage VEB 7 V Verlustleistung, TA = 25 C Total power dissipation Ptot 150 mW Warmewiderstand Thermal resistance RthJA 500 K/W 2001-02-21 2 BP 103 Kennwerte (TA = 25 C, = 950 nm) Characteristics Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity S max 850 nm Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax 420 ... 1130 nm Bestrahlungsempfindliche Flache Radiant sensitive area A 0.12 mm2 Abmessungen der Chipflache Dimensions of chip area LxB LxW 0.5 x 0.5 mm x mm Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface H 0.2 ... 0.8 mm Halbwinkel Half angle 55 Grad deg. IPCB IPCB 0.9 2.7 A A CCE CCB CEB 8 11 19 pF pF pF ICEO 5 ( 100) nA Fotostrom der Kollektor-Basis-Fotodiode Photocurrent of collector-base photodiode Ee = 0.5 mW/cm2, VCB = 5 V Ev = 1000 Ix, Normlicht/standard light a VCB = 5 V Kapazitat Capacitance VCE = 0 V, f = 1 MHz, E = 0 VCB = 0 V, f = 1 MHz, E = 0 VEB = 0 V, f = 1 MHz, E = 0 Dunkelstrom Dark current VCE = 35 V, E = 0 2001-02-21 3 BP 103 Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Parameter Symbol Symbol Wert Value -2 Fotostrom, = 950 nm Photocurrent Ee = 0.5 mW/cm2, VCE = 5 V Ev = 1000 lx Normlicht/standard light A VCE = 5 V -3 -4 Einheit Unit -5 IPCE 80 ... 160 125 ... 250 200 ... 400 320 A IPCE 0.38 0.6 0.95 1.4 mA Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 k t r, t f 5 7 9 12 s Kollektor-EmitterSattigungsspannung Collector-emitter saturation voltage IC = IPCEmin1) x 0.3 Ee = 0.5 mW/cm2 VCEsat 150 150 150 150 mV Stromverstarkung Current gain Ee = 0.5 mW/cm2, VCE = 5 V I PCE --------I PCB 140 210 340 530 - 1) IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe. 1) IPCEmin is the min. photocurrent of the specified group. 2001-02-21 4 BP 103 Relative Spectral Sensitivity Srel = f () Photocurrent IPCE = f (Ee), VCE = 5 V Total Power Dissipation Ptot = f (TA) Output Characteristics Output Characteristics IC = f (VCE), IB = Parameter IC = f (VCE), IB = Parameter Dark Current ICEO = f (VCE), E = 0 Photocurrent IPCE/IPCE25 = f (TA), VCE = 5 V Dark Current ICEO/ICEO25 = f (TA), VCE = 25 V, E = 0 Collector-Emitter Capacitance CCE = f (VCE), f = 1 MHz, E = 0 2001-02-21 5 BP 103 Collector-Emitter Capacitance CCB = f (VCB), f = 1 MHz, E = 0 Emitter-Base Capacitance CEB = f (VEB), f = 1 MHz, E = 0 Directional Characteristics Srel = f () 2001-02-21 6 BP 103 Mazeichnung Package Outlines (2.7 (0.106)) o0.45 (0.018) 0.9 1.1 (0 3) .0 04 5) ( 03 1.1 (0. 0.9 (0 .04 .03 5) 14.5 (0.571) 3.6 (0.142) 12.5 (0.492) 3.0 (0.118) 3) E C B 2.54 (0.100) spacing Chip position o4.3 (0.169) o4.1 (0.161) Radiant sensitive area o5.5 (0.217) o5.2 (0.205) GETY6017 Mae werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg (c) All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2001-02-21 7