BP 103
NPN-Silizium-Fototransistor
Silicon NPN Phototransistor
2001-02-21 1
Wesentliche Merkmale
• Speziell geeignet für Anwendungen im Bereich
von 420 nm bis 1130 nm
• Hohe Linearität
• TO-18, Bodenplatte, klares Epoxy-Gießharz,
mit Basisa nsch luß
Anwendungen
• Computer-Blitzlichtgeräte
• Lichtschranken für Gleich- und
Wechsellichtbetrieb
• Industrieelektronik
• „Messen/Steuern/Regeln“
Typ
Type Bestellnummer
Ordering Code
BP 103 Q62702-P75
BP 103-3/4 Q62702-P3577
Features
• Especially suitable for applications from
420 nm to 1130 nm
• High linearity
• TO-18, base plate, transparent epoxy resin
lens, with base connection
Applications
• Computer-controlled flashes
• Photointerrupters
• Industrial electronics
• For control and drive circuits
2001-02-21 2
BP 103
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg – 40 …+ 80 °C
Löttemperatur bei Tauchlötung
Lötstelle ≥ 2 mm vom Gehäuse,
Lötzeit t ≤ 5 s
Dip soldering temperature, ≥ 2 mm distance
from case bottom t ≤ 5 s
TS260 °C
Löttemperatur bei Kolbenlötung
Lötstelle ≥ 2 mm vom Gehäuse,
Lötzeit t ≤ 3 s
Iron soldering temperature, ≥ 2 mm distance
from case bottom t ≤ 3 s
TS300 °C
Kollektor-Emitterspannung
Collector-emitter voltage VCE 50 V
Kollektorstrom
Collector current IC100 mA
Kollektorspitzenstrom, τ < 10 µs
Collector surge current ICS 200 mA
Emitter-Basisspannung
Emitter-base voltage VEB 7V
Verlustleistung, TA = 25 °C
Total power dissipation Ptot 150 mW
Wärmewiderstand
Thermal resistance RthJA 500 K/W
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2001-02-21 3
Kennwerte (TA = 25 °C, λ = 950 nm)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity λS max 850 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectral range of sensitivity
S = 10% of Smax
λ420 …1130 nm
Bestrahlungsempfindl iche Fläche
Radiant sensitive area A0.12 mm2
Abmessungen der Chipfläche
Dimensions of chip area L × B
L × W0.5 ×0.5 mm × mm
Abstand Chipoberfläche zu Gehäuseoberfläche
Distance chip front to case surface H0.2 …0.8 mm
Halbwinkel
Half angle ϕ±55 Grad
deg.
Fotostrom der Kollektor-Basis-Fotodiode
Photocurrent of collector-base photodiode
Ee = 0.5 mW/cm2, VCB = 5 V
Ev = 1000 Ix, Normlicht/standard light a
VCB = 5 V
IPCB
IPCB
0.9
2.7 µA
µA
Kapazität
Capacitance
VCE = 0 V, f = 1 MHz, E = 0
VCB = 0 V, f = 1 MHz, E = 0
VEB = 0 V, f = 1 MHz, E = 0
CCE
CCB
CEB
8
11
19
pF
pF
pF
Dunkelstrom
Dark current
VCE = 35 V, E = 0
ICEO 5 (≤ 100) nA
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BP 103
Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern
gekennzeichnet.
The phototransistors are grouped according to their spectral sensitivity and distinguished by
arabian figures.
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
-2 -3 -4 -5
Fotostrom, λ = 950 nm
Photocurrent
Ee = 0.5 mW/cm2, VCE = 5 V
Ev = 1000 lx
Normlicht/standard light A
VCE = 5 V
IPCE
IPCE
80 …160
0.38
125 …250
0.6
200 …400
0.95
≥ 320
1.4
µA
mA
Anstiegszeit/Abfallzeit
Rise and fall time
IC = 1 mA, VCC = 5 V, RL = 1 kΩ
tr, tf57912µs
Kollektor-Emitter-
Sättigungsspannung
Collector-emitter saturation
voltage
IC = IPCEmin1) × 0.3
Ee = 0.5 mW/cm2
VCEsat 150 150 150 150 mV
Stromverstärkung
Current gain
Ee = 0.5 mW/cm2, VCE = 5 V
140 210 340 530 –
1) IPCEmin ist der minima le F ot os tr om der jeweilige n Gruppe.
1) IPCEmin is the min. photocurrent of th e sp ec if ied group.
IPCE
IPCB
---------
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Relati ve Sp ectral Sensi ti vi ty
Srel = f (λ)
Output Characteristics
IC = f (VCE), IB = Parameter
Photocurrent
IPCE/IPCE25° = f (TA), VCE = 5 V
Photocurrent
IPCE = f (Ee), VCE = 5 V
Output Characteristics
IC = f (VCE), IB = Parame t er
Dark Current ICEO/ICEO25° = f (TA),
VCE = 25 V, E = 0
Total Pow er Di ssip ation
Ptot = f (TA)
Dark Current
ICEO = f (VCE), E = 0
Collecto r-E mi tter Capacitan ce
CCE = f (VCE), f = 1 MHz, E = 0
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Collecto r -Emitter Cap aci tan ce
CCB = f (VCB), f = 1 MHz, E = 0
Directional Chara cter i sti cs
Srel = f (ϕ)
Emitter-Base Capacitance
CEB = f (VEB), f = 1 MHz, E = 0
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2001-02-21 7
Maßzeichnung
Package Outlines
Maße werden wi e fo lgt angegeben: m m (inc h) / Dim ensions are specified as follo w s: m m (inc h).
Published by OSRAM Opto Semiconductors GmbH & Co. OHG
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention please!
The inform at ion describe s the type of component and sha ll not be c ons idered as assur ed characteris tics .
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recyc ling operat ors known t o you. We can also help y ou – get in touch wit h your near est sales offic e.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critica l component is a co mponent usedin a l ife-support devi ce or system whose failure can re asonably be expec ted
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life sup port device s or syst ems ar e int ended (a ) to b e imp lanted in t he hu man body , or ( b) to supp ort a nd/or main tain
and sust ain human life. If th ey fail , it is rea so nable to assum e th at the health of the user may be endangered.
3.6 (0.142)
3.0 (0.118)
ø4.3 (0.169)
ø4.1 (0.161)
GETY6017
1.1 (0.043)
0.9 (0.035)
0.9 (0.035)
1.1 (0.043)
ø5.2 (0.205)
ø5.5 (0.217)
2.54 (0.100)
spacing
E C B
ø0.45 (0.018)
(2.7 (0.106))
Chip position sensitive area
Radiant
14.5 (0.571)
12.5 (0.492)
