SD1536-03 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features * * * * * * 1025 - 1150 MHz 50 VOLTS POUT = 90 W GP = 8.4 dB MINIMUM INPUT MATCHED COMMON BASE CONFIGURATION DESCRIPTION: The SD1536-03 is a gold metalized silicon NPN power transistor designed for applications requiring high peak power and low duty cycles such as IFF, DME and TACAN. Internal Impedance matching provides improved broad band performance. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C) Symbol Value Unit VCBO VCES VEBO IC PDISS Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Device Current Parameter 65 65 3.5 10 V V V A Power Dissipation 292 W TJ TSTG Juction Temperature Storage Temperature +200 -65 to +150 C C 0.60 C/W Thermal Data RTH(J-C) 12-10-2002 Junction-Case Thermal Resistance SD1536-03 ELECTRICAL SPECIFICATIONS (Tcase = 25 25C) STATIC Symbol BVCBO BVCER BVEBO ICES HFE Test Conditions IC = 10 mA IC = 25 mA IE = 1 mA VCE = 50 V VCE = 5 V IE = 0 mA RBE =10 IC = 0 mA IE = 0 mA IC = 100 mA Min. Value Typ. Max. Unit 65 65 3.5 --10 ----------- ------10 200 V V V mA --- DYNAMIC Symbol Test Conditions Min. Value Typ. Max. Unit POUT f = 1025 - 1150MHz PIN = 13.0 W VCE = 50 V 90 --- --- W GP f = 1025 - 1150MHz PIN = 13.0 W VCE = 50 V 8.4 --- --- dB COB VCE = 50 V f = 1 MHz --- --- 40 pf Conditions Pulse Width = 10 sec Duty Cycle = 1% IMPEDANCE DATA FREQ ZIN() ZCL() 960 MHz 2.5 + j13.0 4.6 - j5.5 1030 MHz 5.2 + j15.0 5.0 - j5.5 1090 MHz 16.3 + j15.0 4.8 - j5.5 1150 MHz 14.7 + j2.5 4.7 - j7.0 1215 MHz 7.6 + j0.5 4.7 - j5.0 PIN=13W VCE = 50 V 12-10-2002 SD1536-03 PACKAGE MECHANICAL DATA 12-10-2002