ZXSDS2M832
SEMICONDUCTORS
ISSUE 2 June 2003
2
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a)(f) RJA 83.3 °C/W
Junction to Ambient (b)(f) RJA 51 °C/W
Junction to Ambient (c)(f) RJA 125 °C/W
Junction to Ambient (d)(f) RJA 111 °C/W
Junction to Ambient (d)(g) RJA 73.5 °C/W
Junction to Ambient (e)(g) RJA 41.7 °C/W
NOTES
(a) For a dual device surface mounted on 8 sq. cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The
copper area is split down the center line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed
pads attached. The copper area is split down the centerline into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper FR4 PCB, in still air conditions with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper FR4 PCB, in still air conditions with all exposed pads attached. The
copper area is split down the centerline into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper FR4 PCB, in still air conditions with all exposed pads attached. The
copper area is split down the centerline into two separate areas with one half connected to each half of the dual device.
(f) For dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in
the package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper of 1 oz
weight, 1mm wide tracks and one half of the device active is Rth= 250°C/W giving a power rating of Ptot=400mW.
THERMAL RESISTANCE
PARAMETER SYMBOL LIMIT UNIT
Reverse Voltage VR60 V
Forward Voltage @ IF= 1000mA VF600 mV
Forward Current IF1.65 A
Average Forward Current D=50%, t<=300us IFAV 1.24 A
Non Repetitive Forward Current t<=100us
Non Repetitive Forward Current t<=10ms
IFSM 16.8
5.63
A
A
Power Dissipation at TA=25°C(a)(f)
Linear Derating Factor
PD1.2
12
W
mW/°C
Power Dissipation at TA=25°C(b)(f)
Linear Derating Factor
PD2
20
W
mW/°C
Power Dissipation at TA=25°C(c)(f)
Linear Derating Factor
PD0.8
8
W
mW/°C
Power Dissipation at TA=25°C(d)(f)
Linear Derating Factor
PD0.9
9
W
mW/°C
Power Dissipation at TA=25°C(d)(g)
Linear Derating Factor
PD1.36
13.6
W
mW/°C
Power Dissipation at TA=25°C(e)(g)
Linear Derating Factor
PD2.4
24
W
mW/°C
Storage Temp, Range Tstg -55 to+150 °C
Operating & Storage Temp, Range Tj -55 to+125 °C
ABSOLUTE MAXIMUM RATINGS